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1. 发明申请

WO2008073845A1 PLASMA IMMERSED ION IMPLANTATION PROCESS 审中-公开
标题翻译：等离子体离子植入过程
公开(公告)号：WO2008073845A1
公开(公告)日：2008-06-19
申请号：PCT/US2007/086848
申请日：2007-12-07
申请人： APPLIED MATERIALS, INC. , LI, Shijian , RAMASWAMY, Kartik , GALLO, Biagio , LEE, Dong Hyung , FOAD, Majeed A.
发明人： LI, Shijian , RAMASWAMY, Kartik , GALLO, Biagio , LEE, Dong Hyung , FOAD, Majeed A.
IPC分类号： C23C14/32 , C23C14/00
CPC分类号： H01L21/2236 , H01L29/66575
摘要： Methods for implanting ions into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, the method for implanting ions into a substrate by a plasma immersion ion implantation process includes providing a substrate into a processing chamber, supplying a gas mixture including a reacting gas and a reducing gas into the chamber, and implanting ions from the gas mixture into the substrate. In another embodiment, the method includes providing a substrate into a processing chamber, supplying a gas mixture including reacting gas and a hydrogen containing reducing gas into the chamber, and implanting ions from the gas mixture into the substrate.
摘要翻译：提供了通过等离子体浸没离子注入工艺将离子注入衬底的方法。在一个实施例中，通过等离子体浸入离子注入工艺将离子注入衬底的方法包括将衬底提供到处理室中，将包括反应气体和还原气体的气体混合物供应到室中，以及从气体中注入离子混合物进入底物。在另一个实施例中，该方法包括将衬底提供到处理室中，将包括使气体和含氢还原气体反应的气体混合物供应到室中，以及将离子从气体混合物注入到衬底中。

2. 发明申请

WO2009085965A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 审中-公开
标题翻译：从基板上去除表面掺杂物
公开(公告)号：WO2009085965A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/087446
申请日：2008-12-18
申请人： APPLIED MATERIALS, INC. , RAMASWAMY, Kartik , COLLINS, Kenneth S. , GALLO, Biagio , HANAWA, Hiroji , FOAD, Majeed A. , HILKENE, Martin A. , SANTHANAM, Kartik , SCOTNEY-CASTLE, Matthew D.
发明人： RAMASWAMY, Kartik , COLLINS, Kenneth S. , GALLO, Biagio , HANAWA, Hiroji , FOAD, Majeed A. , HILKENE, Martin A. , SANTHANAM, Kartik , SCOTNEY-CASTLE, Matthew D.
IPC分类号： H01L21/265 , H01L21/306
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

3. 发明申请

WO2010019283A2 METHOD FOR MEASURING DOPANT CONCENTRATION DURING PLASMA ION IMPLANTATION 审中-公开
标题翻译：测量等离子体离子注入过程中掺杂剂浓度的方法
公开(公告)号：WO2010019283A2
公开(公告)日：2010-02-18
申请号：PCT/US2009/034995
申请日：2009-02-24
申请人： APPLIED MATERIALS, INC. , FOAD, Majeed A. , LI, Shijian
发明人： FOAD, Majeed A. , LI, Shijian
IPC分类号： H01L21/66 , H01L21/265
CPC分类号： G01N21/68 , G01N21/59 , H01L21/26513 , H01L22/12 , H01L22/26
摘要： Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process.
摘要翻译：本发明的实施例通常提供用于在等离子体掺杂工艺期间在预定掺杂剂浓度下进行终点检测的方法。在一个实施例中，一种方法包括：将衬底放置在处理室内，在衬底上方产生等离子体，并将由等离子体产生的光透过衬底，其中光进入顶面并离开衬底的背面，由位于基板下方的传感器发出的光。该方法还提供产生与传感器接收的光成比例的信号，在掺杂过程期间用掺杂剂注入衬底，产生与在掺杂过程期间由传感器接收的光的减少量成比例的多个光信号，产生一旦衬底具有最终掺杂剂浓度，则终止点信号与由传感器接收的光成比例，并停止掺杂过程。

4. 发明申请

WO2010120725A2 HDD PATTERN APPARATUS USING LASER, E-BEAM, OR FOCUSED ION BEAM 审中-公开
标题翻译：使用激光，电子束或聚焦离子束的硬盘图案设备
公开(公告)号：WO2010120725A2
公开(公告)日：2010-10-21
申请号：PCT/US2010/030823
申请日：2010-04-13
申请人： APPLIED MATERIALS, INC. , FOAD, Majeed A. , MOFFATT, Stephen
发明人： FOAD, Majeed A. , MOFFATT, Stephen
IPC分类号： G11B5/84 , G11B5/82 , G11B5/73
CPC分类号： G03B27/42 , G11B5/8404 , H01F10/187 , H01F41/34
摘要： A method and apparatus for manufacturing magnetic storage media is provided. A structural substrate is coated with a magnetically active material, and a magnetic pattern is formed in the magnetically active material by treating portions of the material with energy from a laser, e-beam, or focused ion beam. The beam may be divided into a packet of beamlets by passing the beam through a divider, which may be a diffraction grating for laser energy, a thin film single crystal for electrons, or a perforated plate for ions, or the beam may be generated by an array of emitters. The beamlets are then focused to a desired dimension and distribution by optics or electric fields. The resulting beam packet may be shaped further by passing through an aperture of any desired shape. The resulting beam may be applied sequentially to exposure zones to treat an entire substrate or plurality of substrates.
摘要翻译：提供了一种用于制造磁存储介质的方法和装置。用磁性活性材料涂覆结构基材，通过用激光，电子束或聚焦离子束的能量处理材料的部分，在磁性活性材料中形成磁性图案。通过将光束通过分隔器（可以是用于激光能量的衍射光栅），用于电子的薄膜单晶或用于离子的多孔板，可以将光束分成束分束，或者可以通过一组发射器。然后通过光学或电场将子束聚焦到期望的尺寸和分布。所得到的束束可以进一步通过穿过任何所需形状的孔。所得到的光束可以顺序施加到曝光区域以处理整个基板或多个基板。

5. 发明申请

WO2007130916A2 A METHOD OF ULTRA-SHALLOW JUNCTION FORMATION USING SI FILM ALLOYED WITH CARBON 审中-公开
标题翻译：一种利用碳化硅合金制成超结晶结构的方法
公开(公告)号：WO2007130916A2
公开(公告)日：2007-11-15
申请号：PCT/US2007/067806
申请日：2007-04-30
申请人： APPLIED MATERIALS, INC. , KIM, Yihwan , FOAD, Majeed A. , CHO, Yonah , YE, Zhiyuan , ZOJAJI, Ali , SANCHEZ, Errol
发明人： KIM, Yihwan , FOAD, Majeed A. , CHO, Yonah , YE, Zhiyuan , ZOJAJI, Ali , SANCHEZ, Errol
IPC分类号： C23C16/00 , B05D3/02 , C30B23/00 , C30B25/00
CPC分类号： H01L29/7848 , H01L21/02378 , H01L21/02381 , H01L21/02529 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02664 , H01L21/2233 , H01L21/26513 , H01L29/165 , H01L29/66287 , H01L29/6656 , H01L29/66628 , H01L29/66636
摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950°C so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000°C and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030°C and 1050°C. In certain embodiments, a structure having an abrupt p-n junction is provided.
摘要翻译：提供了一种在基板上形成超浅结的方法。在某些实施例中，提供了在衬底上形成超浅结的方法。将基底放置在处理室中。硅基层沉积在基底上。硅碳层暴露于掺杂剂。将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实质退火。在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施例中，提供具有突变p-n结的结构。

6. 发明申请

WO2012148621A4 APPARATUS AND METHODS FOR MICROWAVE PROCESSING OF SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：WO2012148621A4
公开(公告)日：2012-11-01
申请号：PCT/US2012/031140
申请日：2012-03-29
申请人： APPLIED MATERIALS, INC. , STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
发明人： STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
IPC分类号： H01L21/324
摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.

7. 发明申请

WO2010051283A1 DOPING PROFILE MODIFICATION IN P3I PROCESS 审中-公开
标题翻译： P3I过程中的DOPING配置文件修改
公开(公告)号：WO2010051283A1
公开(公告)日：2010-05-06
申请号：PCT/US2009/062237
申请日：2009-10-27
申请人： APPLIED MATERIALS, INC. , SCOTNEY-CASTLE, Matthew D. , FOAD, Majeed A. , PORSHNEV, Peter I.
发明人： SCOTNEY-CASTLE, Matthew D. , FOAD, Majeed A. , PORSHNEV, Peter I.
IPC分类号： H01L29/167
CPC分类号： H01L21/2236 , H01J37/32412
摘要： Methods for implanting material into a substrate by a plasma immersion ion implanting process are provided. In one embodiment, a method for implanting material into a substrate includes providing a substrate into a processing chamber, the substrate comprising a substrate surface having a material layer formed thereon, generating a first plasma of a non-dopant processing gas, exposing the material layer to the plasma of the non-dopant processing gas, generating a second plasma of a dopant processing gas including a reacting gas adapted to produce dopant ions, and implanting dopant ions from the plasma into the material layer. The method may further include a cleaning or etch process.
摘要翻译：提供了通过等离子体浸没离子注入工艺将材料注入衬底的方法。在一个实施例中，用于将材料注入衬底的方法包括将衬底提供到处理室中，所述衬底包括其上形成有材料层的衬底表面，产生非掺杂剂处理气体的第一等离子体，暴露材料层涉及非掺杂剂处理气体的等离子体，产生掺杂剂处理气体的第二等离子体，所述掺杂剂处理气体包括适于产生掺杂剂离子的反应气体，以及将等离子体中的掺杂剂离子注入到材料层中。该方法还可以包括清洁或蚀刻工艺。

8. 发明申请

WO2012148621A3 APPARATUS AND METHODS FOR MICROWAVE PROCESSING OF SEMICONDUCTOR SUBSTRATES 审中-公开
公开(公告)号：WO2012148621A3
公开(公告)日：2012-11-01
申请号：PCT/US2012/031140
申请日：2012-03-29
申请人： APPLIED MATERIALS, INC. , STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
发明人： STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
IPC分类号： H01L21/324
摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.

9. 发明申请

WO2012148621A2 APPARATUS AND METHODS FOR MICROWAVE PROCESSING OF SEMICONDUCTOR SUBSTRATES 审中-公开
标题翻译：用于微波加工半导体衬底的装置和方法
公开(公告)号：WO2012148621A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/031140
申请日：2012-03-29
申请人： APPLIED MATERIALS, INC. , STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
发明人： STOWELL, Michael W. , FOAD, Majeed A. , HOFMANN, Ralf , ADERHOLD, Wolfgang R. , MOFFATT, Stephen
IPC分类号： H01L21/324
CPC分类号： H01L21/263 , H01L21/324 , H01L21/67115 , H05B6/702 , H05B6/708
摘要： Methods and apparatus for radiation processing of semiconductor substrates using microwave or millimeter wave energy are provided. The microwave or millimeter wave energy may have a frequency between about 600 MHz and about 1 THz. Alternating current from a magnetron is coupled to a leaky microwave emitter that has an inner conductor and an outer conductor, the outer conductor having openings with a dimension smaller than a wavelength of the emitted radiation. The inner and outer conductors are separated by an insulating material. Interference patterns produced by the microwave emissions may be uniformized by phase modulating the power to the emitter and/or by frequency modulating the frequency of the power itself. Power from a single generator may be divided to two or more emitters by a power divider.
摘要翻译：提供了使用微波或毫米波能量辐射处理半导体衬底的方法和设备。微波或毫米波能量可以具有在大约600MHz和大约1THz之间的频率。来自磁控管的交流电流耦合到具有内部导体和外部导体的泄漏微波发射器，外部导体具有尺寸小于发射辐射的波长的开口。内导体和外导体由绝缘材料隔开。通过对发射器的功率进行相位调制和/或通过频率调制功率本身的频率，可以使由微波发射产生的干扰图案均匀化。来自单个发电机的电力可以通过功率分配器分成两个或更多个发射器。

10. 发明申请

WO2011008436A2 METHOD FOR REMOVING IMPLANTED PHOTO RESIST FROM HARD DISK DRIVE SUBSTRATES 审中-公开
标题翻译：从硬盘驱动器基板去除注入光敏抗蚀剂的方法
公开(公告)号：WO2011008436A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/039531
申请日：2010-06-22
申请人： APPLIED MATERIALS, INC. , HILKENE, Martin A. , FOAD, Majeed A. , SCOTNEY-CASTLE, Matthew D. , GOUK, Roman , VERHAVERBEKE, Steven , PORSHNEV, Peter
发明人： HILKENE, Martin A. , FOAD, Majeed A. , SCOTNEY-CASTLE, Matthew D. , GOUK, Roman , VERHAVERBEKE, Steven , PORSHNEV, Peter
IPC分类号： G11B5/84
CPC分类号： G11B5/84 , G03F7/427
摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.
摘要翻译：提供了一种从具有磁活性表面的衬底去除抗蚀剂材料的方法。将基板配置在处理室内，使其暴露于由含有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。清洁剂也可以包括在内。衬底可以通过背面冷却或冷却过程来冷却，其中冷却介质在等离子体处理暂停时被提供给处理室。基板可翻转进行双面处理，并可同时处理多个基板。

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