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1. 发明申请

WO2010045153A2 METHOD FOR DEPOSITING CONFORMAL AMORPHOUS CARBON FILM BY PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD) 审中-公开
标题翻译：通过等离子体增强化学气相沉积（PECVD）沉积合适的无定形碳膜的方法
公开(公告)号：WO2010045153A2
公开(公告)日：2010-04-22
申请号：PCT/US2009/060360
申请日：2009-10-12
申请人： APPLIED MATERIALS, INC. , LEE, Kwangduk Douglas , MORII, Takashi , SUZUKI, Yoichi , RATHI, Sudha , SEAMONS, Martin Jay , PADHI, Deenesh , KIM, Bok Hoen , PAGDANGANAN, Cynthia
发明人： LEE, Kwangduk Douglas , MORII, Takashi , SUZUKI, Yoichi , RATHI, Sudha , SEAMONS, Martin Jay , PADHI, Deenesh , KIM, Bok Hoen , PAGDANGANAN, Cynthia
IPC分类号： H01L21/205 , H01L21/31
CPC分类号： H01L21/3146 , C23C16/26 , C23C16/45523 , C23C16/5096 , H01L21/3141
摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
摘要翻译：提供了在基板上沉积无定形碳层的方法和装置。在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入处理室中，引入等离子体引发气体，所述等离子体引发气体选自氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成基底上的共形无定形碳层。

2. 发明申请

WO2012047742A2 ULTRA HIGH SELECTIVITY DOPED AMORPHOUS CARBON STRIPPABLE HARDMASK DEVELOPMENT AND INTEGRATION 审中-公开
标题翻译：超高选择性非晶态碳纳米管开发和集成
公开(公告)号：WO2012047742A2
公开(公告)日：2012-04-12
申请号：PCT/US2011/054145
申请日：2011-09-30
申请人： APPLIED MATERIALS, INC. , SEAMONS, Martin Jay , RATHI, Sudha , LEE, Kwangduk Douglas , PADHI, Deenesh , KIM, Bok Hoen , CHAN, Chiu
发明人： SEAMONS, Martin Jay , RATHI, Sudha , LEE, Kwangduk Douglas , PADHI, Deenesh , KIM, Bok Hoen , CHAN, Chiu
IPC分类号： H01L21/312
CPC分类号： H01L21/64 , C23C16/0272 , C23C16/26 , H01L21/02115 , H01L21/02274 , H01L21/31144
摘要： Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.
摘要翻译：本发明的实施例一般涉及集成电路的制造，特别涉及在半导体衬底上沉积含硼无定形碳层。在一个实施例中，提供了一种在处理室中处理衬底的方法。该方法包括在处理体积中提供衬底，使含烃气体混合物流入处理体积，通过从含有硼的气体混合物流入处理体积的RF源施加功率产生含烃气体混合物的等离子体，以及在所述等离子体存在下在所述衬底上沉积含硼无定形碳膜，其中所述含硼无定形碳膜含有约30至约60原子百分比的硼。

3. 发明申请

WO2011146212A2 ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM 审中-公开
标题翻译：超高选择性的硬掩膜
公开(公告)号：WO2011146212A2
公开(公告)日：2011-11-24
申请号：PCT/US2011/034185
申请日：2011-04-27
申请人： APPLIED MATERIALS, INC. , LEE, Kwangduk Douglas , SEAMONS, Martin Jay , RATHI, Sudha , CHAN, Chiu , LIN, Michael H.
发明人： LEE, Kwangduk Douglas , SEAMONS, Martin Jay , RATHI, Sudha , CHAN, Chiu , LIN, Michael H.
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/31144
摘要： A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
摘要翻译：在基板处理室中的基板上形成无定形碳层的方法包括将烃源引入到处理室中，将氩单独或与氦，氢，氮及其组合单独或组合地引入到处理室中，其中氩气具有约10:1至约20:1的烃源体积流量比的体积流速，在处理室中以约2托至10托的基本较低的压力产生等离子体，并形成保形无定形碳层。

4. 发明申请

WO2013163132A1 COMPENSATING CONCENTRATION UNCERTAINITY 审中-公开
标题翻译：补偿浓度不确定度
公开(公告)号：WO2013163132A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/037718
申请日：2013-04-23
申请人： APPLIED MATERIALS, INC. , BALASUBRAMANIAN, Ganesh , SEAMONS, Martin Jay , ALAYAVALLI, Kaushik , LEE, Kwangduk Douglas , YEH, Wendy H. , RATHI, Sudha , VIJAYARAGHAVAN, Krishna , CHAN, Chiu
发明人： BALASUBRAMANIAN, Ganesh , SEAMONS, Martin Jay , ALAYAVALLI, Kaushik , LEE, Kwangduk Douglas , YEH, Wendy H. , RATHI, Sudha , VIJAYARAGHAVAN, Krishna , CHAN, Chiu
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45512 , C23C16/52 , Y10T137/0368 , Y10T137/8593
摘要： Methods and apparatus for depositing uniform boron-containing films are disclosed. A first precursor is delivered to a chamber through a first pathway having a first flow controller and a composition sensor. A second precursor is delivered by a second pathway, including a second flow controller, to a mixing point fluidly coupling the first and second pathways. A controller is coupled to the vibration sensor and the first and second flow controllers. The first precursor may be a mixture of diborane and a diluent gas, and the second precursor is typically a diluent gas. The flow rate of the first precursor may be set by determining a concentration of diborane in the first precursor from the composition sensor reading, and setting the flow rate to maintain a desired flow rate of diborane. The flow rate of the second precursor may be set to maintain a desired flow to the chamber.
摘要翻译：公开了沉积均匀含硼膜的方法和装置。通过具有第一流量控制器和成分传感器的第一路径将第一前体输送到室。第二前体通过包括第二流量控制器的第二路径传送到流体耦合第一和第二路径的混合点。控制器耦合到振动传感器和第一和第二流量控制器。第一前体可以是乙硼烷和稀释气体的混合物，第二前体通常是稀释气体。可以通过从组合物传感器读数确定第一前体中的乙硼烷的浓度并设定流速以维持乙硼烷的期望流速来设定第一前体的流速。可以设置第二前体的流速以保持到腔室的所需流动。

5. 发明申请

WO2011149616A3 PLANARIZING ETCH HARDMASK TO INCREASE PATTERN DENSITY AND ASPECT RATIO 审中-公开
公开(公告)号：WO2011149616A3
公开(公告)日：2011-12-01
申请号：PCT/US2011/034163
申请日：2011-04-27
申请人： APPLIED MATERIALS, INC. , SEAMONS, Martin Jay , LEE, Kwangduk Douglas , CHAN, Chiu , REILLY, Patrick , RATHI, Sudha
发明人： SEAMONS, Martin Jay , LEE, Kwangduk Douglas , CHAN, Chiu , REILLY, Patrick , RATHI, Sudha
IPC分类号： H01L21/027 , H01L21/31
摘要： Methods for manufacturing a semiconductor device in a processing chamber are provided. In one embodiment, a method includes depositing over a substrate a first base material having a first set of interconnect features, filling an upper portion of the first set of interconnect features with an ashable material, planarizing an upper surface of the first base material such that an upper surface of the ashable material filled in the first set of interconnect features provide a substantial outer planar surface, depositing a film stack comprising a second base material on the substantial planar outer surface, forming a second set of interconnect features in the second base material, wherein the second set of interconnect features are aligned with the first set of interconnect features, and removing the ashable material from the first base material to connect the second set of interconnect features to the first set of interconnect features.

6. 发明申请

WO2007097822A2 ENHANCEMENT OF REMOTE PLASMA SOURCE CLEAN FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的远程等离子体源清洁的增强
公开(公告)号：WO2007097822A2
公开(公告)日：2007-08-30
申请号：PCT/US2006/061154
申请日：2006-11-21
申请人： APPLIED MATERIALS, INC. , NOWAK, Thomas , YIM, Kang Sub , TANG, Sum-yee Betty , LEE, Kwangduk Douglas , NGUYEN, Vu Ngoc Tran , SINGLETON, Dennis , SEAMONS, Martin Jay , JANAKIRAMAN, Karthik , BALASUBRAMANIAN, Ganesh , AYOUB, Mohamed , YEH, Wendy H. , DEMOS, Alexandros T. , M'SAAD, Hichem
发明人： NOWAK, Thomas , YIM, Kang Sub , TANG, Sum-yee Betty , LEE, Kwangduk Douglas , NGUYEN, Vu Ngoc Tran , SINGLETON, Dennis , SEAMONS, Martin Jay , JANAKIRAMAN, Karthik , BALASUBRAMANIAN, Ganesh , AYOUB, Mohamed , YEH, Wendy H. , DEMOS, Alexandros T. , M'SAAD, Hichem
IPC分类号： H05H1/24
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要翻译：提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包括硅和碳的阻挡膜，以及包括硅，氧和碳的低介电常数膜。这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。反应性物质由含氧气体如O 2和/或含卤素气体如NF 3产生。在室从远程等离子体源暴露于反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

7. 发明申请

WO2022072158A1 METHOD OF IN SITU CERAMIC COATING DEPOSITION 审中-公开
公开(公告)号：WO2022072158A1
公开(公告)日：2022-04-07
申请号：PCT/US2021/050956
申请日：2021-09-17
申请人： APPLIED MATERIALS, INC.
发明人： BOBEK, Sarah Michelle , KHAJA, Abdul Aziz , LIMDULPAIBOON, Ratsamee , LEE, Kwangduk Douglas
IPC分类号： C23C16/40 , C23C16/56 , C23C16/505 , C23C16/52 , C23C16/44
摘要： The present disclosure relates to a method for in situ seasoning of process chamber components, such as electrodes. The method includes depositing a silicon oxide film over the process chamber component and converting the silicon oxide film to a silicon-carbon-containing film. The silicon-carbon-containing film forms a protective film over the process chamber components and is resistant to plasma processing and/or dry etch cleaning. The coatings has high density, good emissivity control, and reduces risk of device property drift.

8. 发明申请

WO2019169298A1 SYSTEMS AND METHODS OF FORMATION OF A METAL HARDMASK IN DEVICE FABRICATION 审中-公开
公开(公告)号：WO2019169298A1
公开(公告)日：2019-09-06
申请号：PCT/US2019/020350
申请日：2019-03-01
申请人： APPLIED MATERIALS, INC.
发明人： MIN, Xiaoquan , KULSHRESHTHA, Prashant Kumar , LEE, Kwangduk Douglas , PRABHAKAR, Vinay K.
IPC分类号： H01L21/033 , H01L21/02 , H05H1/46 , H01J37/32
摘要： A method of and system for substrate fabrication is disclosed herein. The method includes performing a first plasma-enhanced surface treatment in a chamber prior to disposal of a substrate, then, subsequently, depositing a season material in the process chamber. After depositing the plurality of season materials in the process chamber, a substrate is disposed in the chamber. The substrate is positioned in the process chamber in contact with the season material. A substrate treatment is performed. The substrate treatment can include one or more of: performing a second plasma-enhanced surface treatment, forming a barrier layer on the substrate, or performing a low frequency RF treatment prior to forming a metal-based hardmask film on the substrate. The metal-based hardmask film includes one or more metals.

9. 发明申请

WO2017222938A1 CLEANING PROCESS FOR REMOVING BORON-CARBON RESIDUALS IN PROCESSING CHAMBER AT HIGH TEMPERATURE 审中-公开
标题翻译：高温加工室内清除硼碳残留物的清洗工艺
公开(公告)号：WO2017222938A1
公开(公告)日：2017-12-28
申请号：PCT/US2017/037946
申请日：2017-06-16
申请人： APPLIED MATERIALS, INC.
发明人： BI, Feng , KULSHRESHTHA, Prashant Kumar , LEE, Kwangduk Douglas , CONNORS, Paul
IPC分类号： H01L21/02 , H01L21/67 , H01J37/32 , H05H1/46
CPC分类号： H01J37/32862 , H01J37/32568 , H01J37/32577
摘要： Embodiments of the invention generally relate to methods for removing a boron-carbon layer from a surface of a processing chamber using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a processing chamber includes positioning the pedestal at a first distance from the showerhead, and exposing a deposited boron-carbon layer to a first plasma process where the first plasma process comprises generating a plasma that comprises water vapor and a first carrier gas by biasing a showerhead that is disposed over a pedestal, and positioning the pedestal at a second distance from the showerhead and exposing the deposited boron-carbon layer to a second plasma process where the second plasma process comprises generating a plasma that comprises water vapor and a second carrier gas by biasing the showerhead and biasing a side electrode relative to the showerhead.
摘要翻译：本发明的实施例一般涉及使用水蒸气等离子体处理从处理室的表面去除硼 - 碳层的方法。在一个实施例中，用于清洁处理腔室的表面的方法包括将所述基座定位在离所述喷头第一距离处，并且将沉积的硼 - 碳层暴露于第一等离子体处理，其中所述第一等离子体处理包括产生等离子体，水蒸汽和第一载气，其中通过偏置设置在基座上方的喷头，并且将所述基座定位在距所述喷头第二距离处并且将所述沉积的硼 - 碳层暴露于第二等离子体工艺，其中所述第二等离子体工艺包括产生通过偏置喷头并相对于喷头偏置侧电极，包括水蒸气和第二载气的等离子体。

10. 发明申请

WO2017184301A1 METHOD FOR PECVD OVERLAY IMPROVEMENT 审中-公开
标题翻译： PECVD重叠改进方法
公开(公告)号：WO2017184301A1
公开(公告)日：2017-10-26
申请号：PCT/US2017/024323
申请日：2017-03-27
申请人： APPLIED MATERIALS, INC.
发明人： SUZUKI, Yoichi , TSIANG, Michael Wenyoung , LEE, Kwangduk Douglas , MORII, Takashi , GOTO, Yuta
IPC分类号： C23C16/52 , C23C16/04 , C23C16/46 , C23C16/50
CPC分类号： H01L22/20 , C23C16/46 , C23C16/50 , C23C16/52 , C23C16/56 , H01L21/02274 , H01L21/324 , H01L21/67098 , H01L21/67109 , H01L21/67167 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67253 , H01L21/67288 , H01L21/67742 , H01L22/12
摘要： The present disclosure generally relates to a method for performing semiconductor device fabrication, and more particularly, to improvements in lithographic overlay techniques. The method for improved overlay includes depositing a material on a substrate, heating a substrate in a chamber using thermal energy, measuring a local stress pattern of each substrate, wherein measuring the local stress pattern measures an amount of change in a depth of the deposited material on the substrate, plotting a plurality of points on a k map to determine a local stress pattern of the substrate, adjusting the thermal energy applied to the points on the k map, determining a sensitivity value for each of the points on the k map, and applying a correction factor to the applied thermal energy to adjust the local stress pattern.
摘要翻译：本公开总体上涉及用于执行半导体器件制造的方法，并且更具体地涉及光刻重叠技术的改进。用于改进覆盖层的方法包括：在基板上沉积材料;使用热能在腔室中加热基板;测量每个基板的局部应力图案，其中测量局部应力图案测量沉积材料深度的变化量在基板上绘制k图上的多个点以确定基板的局部应力图案，调整施加到k图上的点的热能，确定k图上的每个点的灵敏度值，以及对所施加的热能应用校正因子以调整局部应力模式。

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