专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2006031366A2 FULL SEQUENCE METAL AND BARRIER LAYER ELECTROCHEMICAL MECHANICAL PROCESSING 审中-公开
标题翻译：全序列金属和障碍层电化学机械加工
公开(公告)号：WO2006031366A2
公开(公告)日：2006-03-23
申请号：PCT/US2005/029357
申请日：2005-08-18
申请人： APPLIED MATERIALS, INC. , GALBURT, Vladimir , MAO, Daxin , JIA, Renhe , WANG, Zhihong , TIAN, Yuan , LIU, Feng, Q. , KO, Sen, Hou , TSAI, Stan, D. , CHEN, Liang-Yuh , HU, Yongqi
发明人： MAO, Daxin , JIA, Renhe , WANG, Zhihong , TIAN, Yuan , LIU, Feng, Q. , KO, Sen, Hou , TSAI, Stan, D. , CHEN, Liang-Yuh , HU, Yongqi
CPC分类号： H01L21/7684 , B23H5/06 , B23H5/08 , H01L21/32125
摘要： A method and apparatus for electrochemically processing metal and barrier materials is provided. In one embodiment, a method for electrochemically processing a substrate includes the steps of establishing an electrically-conductive path through an electrolyte between an exposed layer of barrier material on the substrate and an electrode, pressing the substrate against a processing pad assembly with a force less than about 2 psi, providing motion between the substrate and pad assembly in contact therewith and electrochemically removing a portion of the exposed layer during a first electrochemical processing step in a barrier processing station.
摘要翻译：提供了一种用于电化学处理金属和阻隔材料的方法和装置。在一个实施例中，用于电化学处理衬底的方法包括以下步骤：在衬底上的暴露的阻挡材料层和电极之间建立通过电解质的导电路径，将衬底压靠处理衬垫组件在约2psi之间提供在与其接触的基板和焊盘组件之间的运动，并且在屏障处理站中的第一电化学处理步骤期间电化学去除暴露层的一部分。

2. 发明申请

WO2004108358A2 CONDUCTIVE POLISHING ARTICLE FOR ELECTROCHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：电化学机械抛光导电抛光法
公开(公告)号：WO2004108358A2
公开(公告)日：2004-12-16
申请号：PCT/US2004/017827
申请日：2004-06-07
申请人： APPLIED MATERIALS, INC. , HU, Yongqi , DUBOUST, Alain , MANENS, Antoine, P. , TSAI, Stan, D. , BUTTERFIELD, Paul, D. , WANG, Yan , LIU, Feng, Q. , NEO, Siew, S. , CHEN, Liang-Yuh , TIAN, Yuan, A. , KO, Sen-Hou , EWALD, Robert, A.
发明人： HU, Yongqi , DUBOUST, Alain , MANENS, Antoine, P. , TSAI, Stan, D. , BUTTERFIELD, Paul, D. , WANG, Yan , LIU, Feng, Q. , NEO, Siew, S. , CHEN, Liang-Yuh , TIAN, Yuan, A. , KO, Sen-Hou , EWALD, Robert, A.
IPC分类号： B24B37/04
CPC分类号： B82Y30/00 , B23H5/08 , B24B37/205 , B24B37/22 , C25F7/00
摘要： Embodiments of a polishing article for processing a substracte are provided. In one embodiment, a polishing article for processing a substrate comprises a fabric layer having a conductive layer disposed thereover. The conductive layer may be woven or non-woven. The conductive layer may be comprised of a soft material and, in one embodiment, the exposed surface may be planar.
摘要翻译：提供了用于处理减法器的抛光制品的实施例。在一个实施例中，用于处理衬底的抛光制品包括其上设置有导电层的织物层。导电层可以是编织的或无纺的。导电层可以由软质材料组成，并且在一个实施例中，暴露表面可以是平面的。

3. 发明申请

WO2005002794A2 METHOD AND APPARATUS FOR ELECTROCHEMICAL MECHANICAL PROCESSING 审中-公开
标题翻译：电化学机械加工方法与装置
公开(公告)号：WO2005002794A2
公开(公告)日：2005-01-13
申请号：PCT/US2004/022722
申请日：2004-07-01
申请人： APPLIED MATERIALS, INC. , WANG, Yan , NEO, Siew, S. , LIU, Feng, Q. , TSAI, Stan D. , HU, Yongqi , DUBOUST, Alain , MANENS, Antoine, P. , WADENSWEILER, Ralph, M. , MAVLIV, Rashid , CHEN, Liang-Yuh , OLGADO, Donald, J.K. , BUTTERFIELD, Paul, D. , TSENG, Ming-Kuei , CHANG, Shou-Sung , SUN, Lizhong
发明人： WANG, Yan , NEO, Siew, S. , LIU, Feng, Q. , TSAI, Stan D. , HU, Yongqi , DUBOUST, Alain , MANENS, Antoine, P. , WADENSWEILER, Ralph, M. , MAVLIV, Rashid , CHEN, Liang-Yuh , OLGADO, Donald, J.K. , BUTTERFIELD, Paul, D. , TSENG, Ming-Kuei , CHANG, Shou-Sung , SUN, Lizhong
IPC分类号： B24B37/04
CPC分类号： B24B37/04 , B23H5/08 , B24B53/017 , C25F7/00
摘要： Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical polishing system. In one embodiment, a cell for polishing a substrate includes a polishing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper polishing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk polishing cell and a residual polishing cell. The residual polishing cell includes a biased conductive polishing surface. In further embodiments, the conductive element is protected from attack by process chemistries.
摘要翻译：本发明的实施例通常提供一种用于在电化学机械抛光系统中处理衬底的方法和装置。在一个实施例中，用于抛光衬底的单元包括设置在压板组件的顶表面上的抛光垫。多个导电元件跨过上抛光表面以间隔的关系布置，并且适于相对于设置在垫和压板组件之间的电极偏置衬底。多个通道通过压板组件形成在顶表面和限定在压板组件内的气室之间。在另一个实施例中，提供了具有大量抛光单元和残余抛光单元的系统。残余抛光单元包括偏置的导电抛光表面。在另外的实施方案中，保护导电元件免受过程化学物质的侵蚀。

4. 发明申请

WO2004111146A1 POLISHING COMPOSITION AND METHOD FOR POLISHING A CONDUCTIVE MATERIAL 审中-公开
标题翻译：抛光组合物和抛光导电材料的方法
公开(公告)号：WO2004111146A1
公开(公告)日：2004-12-23
申请号：PCT/US2004/017691
申请日：2004-06-04
申请人： APPLIED MATERIALS, INC. , LIU, Feng, Q. , CHEN, Liang-Yuh , TSAI, Stan, D. , DUBOUST, Alain , NEO, Siew, S. , HU, Yongqi , WANG, Yan , BUTTERFIELD, Paul, D.
发明人： LIU, Feng, Q. , CHEN, Liang-Yuh , TSAI, Stan, D. , DUBOUST, Alain , NEO, Siew, S. , HU, Yongqi , WANG, Yan , BUTTERFIELD, Paul, D.
IPC分类号： C09G1/02
CPC分类号： B23H3/08 , B23H5/08 , B24B37/0056 , B24B37/044 , B24B37/046 , C09G1/04 , C25F3/02 , H01L21/3212 , H01L21/32125 , H01L21/32134 , H01L21/7684
摘要： A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition comprises phosphoric acid, at least one chelating agent, a corrosion inhibitor, a salt, an oxidizer, abrasive particulates, at least one pH adjusting agent to provide a pH from about 4 to about 7 and a solvent. The method further includes forming a passivation layer on the conductive material layer, removing the passivation layer to expose a portion of the conductive material layer, applying a first bias to the substrate, and removing at least about 50% of the conductive material layer. The method further includes separating the substrate from the first polishing composition, exposing the substrate to a second polishing composition and a second bias, and continuing to remove the conductive material layer.
摘要翻译：提供一种处理其上设置有导电材料层的基板的方法，其包括将基板定位在处理装置中并将第一抛光组合物提供到基板之间。抛光组合物包括磷酸，至少一种螯合剂，缓蚀剂，盐，氧化剂，磨料颗粒，至少一种pH调节剂以提供约4至约7的pH和溶剂。该方法还包括在导电材料层上形成钝化层，去除钝化层以暴露导电材料层的一部分，向衬底施加第一偏压，以及去除至少约50％的导电材料层。该方法还包括从第一抛光组合物分离衬底，将衬底暴露于第二抛光组合物和第二偏压，并且继续去除导电材料层。

5. 发明申请

WO2007019279A2 METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
标题翻译：抛光基材的方法和组合物
公开(公告)号：WO2007019279A2
公开(公告)日：2007-02-15
申请号：PCT/US2006/030381
申请日：2006-08-03
申请人： APPLIED MATERIALS, INC. , LIU, Feng, Q. , DU, Tianbao , DUBOUST, Alain , WANG, Yan , HU, Yongqi , TSAI, Stan, D. , CHEN, Liang-Yuh , TU, Wen-Chiang , HSU, Wei-Yung
发明人： LIU, Feng, Q. , DU, Tianbao , DUBOUST, Alain , WANG, Yan , HU, Yongqi , TSAI, Stan, D. , CHEN, Liang-Yuh , TU, Wen-Chiang , HSU, Wei-Yung
IPC分类号： B23H5/00
CPC分类号： B23H5/08 , B24B37/042 , C25F3/02 , H01L21/32125 , H01L21/6875 , H01L21/7684
摘要： Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a method is provided for processing a substrate to remove conductive material disposed over narrow feature definitions formed in a substrate at a higher removal rate than conductive material disposed over wide feature definitions formed in a substrate by an electrochemical mechanical polishing technique, and then polishing the substrate by at least a chemical mechanical polishing technique.
摘要翻译：提供抛光组合物和从基底表面除去导电材料的方法。在一个方面中，提供了一种用于以比通过电化学机械抛光技术在布置在基板中形成的宽特征定义上的导电材料更高的移除速率处理基板以去除设置在基板中形成的窄特征定义上的导电材料的方法，以及然后用至少一种化学机械抛光技术抛光基片。

6. 发明申请

WO2006014728A1 POLISHING SOLUTION RETAINER 审中-公开
标题翻译：抛光解决方案
公开(公告)号：WO2006014728A1
公开(公告)日：2006-02-09
申请号：PCT/US2005/025733
申请日：2005-07-19
申请人： APPLIED MATERIALS, INC. , ZHANG, Hanzhong , LIU, Feng, Q. , TSAI, Stan, D. , MAVLIEV, Rashid , OLGADO, Donald , CHEN, Liang-Yuh
发明人： ZHANG, Hanzhong , LIU, Feng, Q. , TSAI, Stan, D. , MAVLIEV, Rashid , OLGADO, Donald , CHEN, Liang-Yuh
IPC分类号： B24B37/04
CPC分类号： B24B37/04 , B24B57/02
摘要： A substrate polishing apparatus and method are described. A base includes at least one movable platen to engage a polishing pad. At least one carrier head assembly presses a substrate against the polishing pad substantially within a polishing area during a polishing operation. A polishing solution dispenser applies a polishing solution to the polishing pad substantially within the polishing area during the polishing operation. A polishing solution retaining mechanism is attached to one of the base or the carrier head assembly. The retaining mechanism engages a top surface of the polishing pad and retains the polishing solution substantially within the polishing area during the polishing operation. Some implementations may reduce polishing solution consumption and allow for increased angular velocity.
摘要翻译：对基板研磨装置和方法进行说明。基座包括至少一个可移动的压板以接合抛光垫。在抛光操作期间，至少一个承载头组件基本上在抛光区域内将衬底压靠在抛光垫上。抛光溶液分配器在抛光操作期间基本上在抛光区域内将抛光溶液施加到抛光垫。抛光溶液保持机构附接到基座或承载头组件中的一个。保持机构接合抛光垫的顶表面，并且在抛光操作期间将抛光液基本保持在抛光区域内。一些实施方案可以减少抛光溶液消耗并允许增加的角速度。

7. 发明申请

WO2007095421A3 METHOD FOR ELECTROCHEMICALLY POLISHING A CONDUCTIVE MATERIAL ON A SUBSTRATE 审中-公开
公开(公告)号：WO2007095421A3
公开(公告)日：2007-08-23
申请号：PCT/US2007/061401
申请日：2007-01-31
申请人： APPLIED MATERIALS, INC. , DU, Tianbo , LIU, Feng, Q. , DUBOUST, Alain , HSU, Wei-yung , CHEN, Liang-yuh
发明人： DU, Tianbo , LIU, Feng, Q. , DUBOUST, Alain , HSU, Wei-yung , CHEN, Liang-yuh
IPC分类号： H01L21/00 , B01J19/12
摘要： Methods are provided for removing conductive materials from a substrate surface. In one aspect, a method includes providing a substrate comprising dielectric feature definitions formed between substrate field regions, a barrier material disposed in the feature definitions and on the substrate field regions, and a conductive material disposed on the barrier material, polishing the substrate to substantially remove a bulk portion of the conductive material with a direct current bias, and polishing the substrate to remove a residual portion of the conductive material with a pulse bias.

8. 发明申请

WO2006086265A2 METHOD AND COMPOSITION FOR POLISHING A SUBSTRATE 审中-公开
标题翻译：用于抛光底物的方法和组合物
公开(公告)号：WO2006086265A2
公开(公告)日：2006-08-17
申请号：PCT/US2006/004013
申请日：2006-02-02
申请人： APPLIED MATERIALS, INC. , ZHAO, Junzi , LIU, Feng, Q. , WANG, You , TSAI, Stan, D.
发明人： ZHAO, Junzi , LIU, Feng, Q. , WANG, You , TSAI, Stan, D.
IPC分类号： C09G1/04 , H01L21/321
CPC分类号： H01L21/7684 , B24B37/044 , C09G1/02 , C09G1/04 , C25F3/02 , H01L21/32125
摘要： Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a substrate surface including an acid based electrolyte system, one or more chelating agents, one or more pH adjusting agents to provide a pH between about 3 and about 11, and a solvent. The composition may be used in an electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of barrier materials from the substrate surface with a reduction in planarization type defects.
摘要翻译：提供了用于从衬底表面去除阻挡材料的抛光组合物和方法。一方面，提供一种组合物，用于从基材表面至少除去阻挡材料，所述基材表面包括酸性电解质体系，一种或多种螯合剂，一种或多种pH调节剂以提供约3至约11的pH，以及溶剂。该组合物可用于电化学机械平面化工艺中。本文所述的抛光组合物和方法通过减小平坦化型缺陷来改善阻挡材料从衬底表面的有效去除速率。

9. 发明申请

WO2004024394A1 CONTROL OF REMOVAL PROFILE IN ELECTROCHEMICALLY ASSISTED CMP 审中-公开
标题翻译：电化学辅助CMP中的去除特性的控制
公开(公告)号：WO2004024394A1
公开(公告)日：2004-03-25
申请号：PCT/US2003/029230
申请日：2003-09-15
申请人： APPLIED MATERIALS, INC.
发明人： SUN, Lizhong , CHEN, Liang-Yuh , NEO, Siew , LIU, Feng, Q. , DUBOUST, Alain , TSAI, Stan, D. , MAVLIEV, Rashid, A.
IPC分类号： B24B37/04
CPC分类号： B24B37/046 , B23H5/06 , B23H5/08 , B24B37/042 , B24B49/16 , H01L21/32125
摘要： Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate (104) comprises a counter-electrode (166) and a pad (160) positioned between a substrate (104) and the counter-electrode (166) and a pad (160) positioned between a substrate (104) and the counter-electrode (166). The counter-electrode (166) and/or the pad (160) each comprise a plurality of electrically isolated zones (924, 926, 628, 424, 426, 428). An electrical connector is separately coupled to each of the conductive elements. Separate bias may be applied in each of the electrically isolated zones. A substrate having a material layer may be moved in a relative motion from the counter-electrode (166), the pad (160), or both. Determining the separate biases may comprise determining a time that at least one portion of the material layer is associated with each of the zones of the counter-electrode (166).
摘要翻译：本发明的各方面通常提供使用电化学沉积技术来抛光衬底的方法和装置。一方面，一种用于抛光衬底（104）的设备包括位于衬底（104）和对电极（166）之间的对电极（166）和焊盘（160）以及位于基板（104）和对置电极（166）。对电极（166）和/或焊盘（160）各自包括多个电隔离区域（924,926,628,424,426,428）。电连接器分别耦合到每个导电元件。可以在每个电隔离区域中分别施加偏压。具有材料层的基板可以相对运动地从对电极（166），焊盘（160）或两者移动。确定单独的偏压可以包括确定材料层的至少一部分与对电极（166）的每个区域相关联的时间。

10. 发明申请

WO2003006205A3 BARRIER REMOVAL AT LOW POLISH PRESSURE 审中-公开
公开(公告)号：WO2003006205A3
公开(公告)日：2003-01-23
申请号：PCT/US2002/022126
申请日：2002-07-12
申请人： APPLIED MATERIALS, INC.
发明人： TSAI, Stan, D. , LI, Shijian , LIU, Feng, Q. , SUN, Lizhong , CHEN, Liang-Yuh , MORAD, Ratson
IPC分类号： H01L21/321
摘要： The invention generally provides methods and compositions for planarizing a substrate surface having underlying dielectric materials. Aspects of the invention provide compositions and methods using a combination of low polishing pressures, polishing compositions, various polishing speeds, selective polishing pads, and selective polishing temperatures, for removing barrier materials by a chemical mechanical polishing technique with minimal residues and minimal seam damage. Aspects of the invention are achieved by employing a strategic multi-step process including sequential CMP at low polishing pressure to remove the deposited barrier materials.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式