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1. 发明申请

WO2010006181A2 METHODS AND APPARATUS FOR ABATING ELECTRONIC DEVICE MANUFACTURING PROCESS EFFLUENT 审中-公开
标题翻译：电子设备制造工艺流程的方法和装置
公开(公告)号：WO2010006181A2
公开(公告)日：2010-01-14
申请号：PCT/US2009/050125
申请日：2009-07-09
申请人： APPLIED MATERIALS, INC. , FOX, Allen , CLARK, Daniel, O. , HOOSHDARAN, Frank, F. , FLIPPO, Belynda
发明人： FOX, Allen , CLARK, Daniel, O. , HOOSHDARAN, Frank, F. , FLIPPO, Belynda
IPC分类号： H01L21/00 , H01L21/02
CPC分类号： G05D21/02 , B01D53/005 , B01D53/68 , B01D2251/102 , B01D2251/202 , B01D2251/208 , B01D2257/108 , B01D2257/11 , B01D2257/2027 , B01D2257/204 , B01D2257/2047 , B01D2257/2066 , B01D2257/706 , B01D2258/0216
摘要： A thermal abatement system is provided, including: a thermal abatement reactor; an inlet in fluid communication with the reactor; a process chamber in fluid communication with the inlet; a first sheathing fluid source in fluid communication with the inlet; a first flow control device, adapted to regulate a flow of a first sheathing fluid from the first sheathing fluid source; and a controller, in signal communication with the first flow control device, adapted to regulate the sheathing fluid by operating the first flow control device; wherein the inlet is adapted to receive an effluent stream from the process chamber and the first sheathing fluid from the first sheathing fluid source, to sheathe the effluent stream with the first sheathing fluid to form a sheathed effluent stream, and to introduce the sheathed effluent stream into the reactor.
摘要翻译：提供了一种减热系统，包括：热消除反应器; 与反应器流体连通的入口; 与入口流体连通的处理室; 与入口流体连通的第一护套流体源; 第一流量控制装置，适于调节来自第一护套流体源的第一护套流体的流动; 以及与第一流量控制装置进行信号通信的控制器，适于通过操作第一流量控制装置来调节护套流体; 其中所述入口适于接收来自所述处理室的流出物流和来自所述第一护套流体源的所述第一护套流体，以将所述流出物流与所述第一护套流体包裹以形成护套流出物流，并且将所述护套流出物流进入反应堆。

2. 发明申请

WO2010118219A2 METHODS AND APPARATUS FOR TREATING EFFLUENT 审中-公开
标题翻译：处理液体的方法和装置
公开(公告)号：WO2010118219A2
公开(公告)日：2010-10-14
申请号：PCT/US2010/030372
申请日：2010-04-08
申请人： APPLIED MATERIALS, INC. , HOOSHDARAN, Frank, F. , ISHIKAWA, Tetsuya , JUNG, Jay, J. , CHANDLER, Phil , CLARK, Daniel, O.
发明人： HOOSHDARAN, Frank, F. , ISHIKAWA, Tetsuya , JUNG, Jay, J. , CHANDLER, Phil , CLARK, Daniel, O.
IPC分类号： H01L21/00 , H01L21/02 , H01L31/18 , H01L33/02
CPC分类号： B01D53/68 , B01D2251/102 , B01D2251/202 , B01D2257/204 , B01D2257/206 , B01D2257/2066 , B01D2257/708 , B01D2258/0216 , Y02W10/37
摘要： Methods and apparatus for treating effluents in process systems are provided In some embodiments, a system for treating effluent includes a process chamber having a processing volume; an exhaust conduit coupled to the process chamber to remove an effluent from the processing volume; and a reactive species generator coupled to the exhaust conduit to inject a reactive species into the exhaust conduit to treat the effluent, wherein the reactive species generator generates a reactive species comprising at least one of singlet hydrogen, hydrogen ions or hydrogen radicals. In some embodiments, a method for treating effluent includes flowing an effluent from a processing volume of a process system through an exhaust conduit fluidly coupled to the processing volume; treating the effluent in the exhaust conduit with a reactive species comprising at least one of singlet hydrogen, hydrogen ions, or hydrogen radicals; and flowing the treated effluent to an abatement system.
摘要翻译：在一些实施例中，用于处理流出物的系统包括具有处理容积的处理室; 排出管道，其耦合到所述处理室以从所述处理容积中除去流出物; 以及反应物质发生器，其耦合到所述排气管道以将反应物质注入所述排气管道中以处理所述流出物，其中所述反应物种发生器产生包含单一氢，氢离子或氢自由基中的至少一种的活性物质。在一些实施方案中，用于处理流出物的方法包括将来自处理系统的处理体积的流出物流经流体耦合到处理体积的排气导管; 用包含单一氢，氢离子或氢自由基中的至少一种的活性物质处理排气管道中的流出物; 并将经处理的流出物流入减排系统。

3. 发明申请

WO2010088592A2 ABATEMENT APPARATUS WITH SCRUBBER CONDUIT 审中-公开
标题翻译：带洗涤器导管的脱脂装置
公开(公告)号：WO2010088592A2
公开(公告)日：2010-08-05
申请号：PCT/US2010/022716
申请日：2010-02-01
申请人： APPLIED MATERIALS, INC. , CLARK, Daniel, O. , DICKINSON, Colin, John , JUNG, Jay, J. , BROWN, Daniel, Stephan , MOALEM, Mehran , HOOSHDARAN, Frank, F. , FARNIA, Morteza , PAGE, Barry , SYPHERD, Gary , DAHM, Jonathan , CHANDLER, Phil
发明人： CLARK, Daniel, O. , DICKINSON, Colin, John , JUNG, Jay, J. , BROWN, Daniel, Stephan , MOALEM, Mehran , HOOSHDARAN, Frank, F. , FARNIA, Morteza , PAGE, Barry , SYPHERD, Gary , DAHM, Jonathan , CHANDLER, Phil
IPC分类号： B01D53/78 , B01D47/00
CPC分类号： B01D47/027 , B01D47/06 , B01D53/185 , B01D53/40 , B01D53/78 , B01D2251/604 , B01D2251/80 , B01D2258/0216
摘要： Embodiments of an abatement apparatus are disclosed herein. In some embodiments, an abatement apparatus may include a scrubber configured to receive an effluent stream from a process chamber and further configured to remove first particles from the effluent stream; a scrubber conduit coupled to the scrubber to receive the effluent stream therefrom and configured to remove second particles from the effluent stream, the scrubber conduit having one or more inlets configured to provide a fluid to sufficiently wet an interior surface of the scrubber conduit to trap the second particles thereon and to wash the second particles therealong; and a central scrubber coupled to the scrubber via the scrubber conduit. In some embodiments, the scrubber conduit is downward sloping from the scrubber to the central scrubber. In some embodiments, a plurality of scrubbers may be coupled to the central scrubber via a plurality of scrubber conduits.
摘要翻译：本文公开了减排设备的实施例。在一些实施例中，减量装置可以包括洗涤器，该洗涤器构造成接收来自处理室的流出物流并且还被配置为从流出物流中去除第一颗粒; 洗涤器导管，所述洗涤器导管连接至所述洗涤器以接收来自所述洗涤器的流出物流并配置成从所述流出物流移除第二颗粒，所述洗涤器导管具有一个或多个入口，所述入口构造成提供流体以充分湿润所述洗涤器导管的内表面，第二颗粒在其上并沿其洗涤第二颗粒; 以及通过洗涤器导管连接到洗涤器的中央洗涤器。在一些实施例中，洗涤器导管从洗涤器向中央洗涤器向下倾斜。在一些实施例中，多个洗涤器可以通过多个洗涤器导管连接到中心洗涤器。

4. 发明申请

WO2013058970A1 SUBSTRATE SUPPORT BUSHING 审中-公开
标题翻译：基座支撑
公开(公告)号：WO2013058970A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/058232
申请日：2012-10-01
申请人： APPLIED MATERIALS, INC. , HOU, Tao , OH, Jeonghoon , CHO, Tom, K. , MATLOSZ, Andrzej , HOOSHDARAN, Frank, F. , YANG, Yao-Hung
发明人： HOU, Tao , OH, Jeonghoon , CHO, Tom, K. , MATLOSZ, Andrzej , HOOSHDARAN, Frank, F. , YANG, Yao-Hung
IPC分类号： H01L21/683
CPC分类号： C23C16/4586 , C23C16/505 , F16C29/02 , H01L21/68742
摘要： A bushing assembly for supporting a substrate within a processing chamber is generally provided. In one aspect, the bushing assembly comprises a tubular body having an outer perimeter and an aperture extending therethrough, a first ring having a first inner edge, the first ring disposed in the aperture in an upper portion of the tubular body, and a second ring having a second inner edge, the second ring disposed in the aperture in a lower portion of the tubular body. In another aspect, the first inner edge has a first radius of curvature, and the second inner edge has a second radius of curvature. In another aspect, a first inner edge diameter, a second inner edge diameter, the first radius of curvature, and the second radius of curvature are selected such that a support pin extending through the aperture contacts the bushing assembly on at most two points.
摘要翻译：通常提供用于在处理室内支撑衬底的衬套组件。在一个方面，套管组件包括具有外周边和延伸穿过其的孔的管状体，第一环具有第一内边缘，第一环设置在管状体的上部中的孔中，第二环具有第二内边缘，所述第二环设置在所述管状体的下部中的所述孔中。在另一方面，第一内边缘具有第一曲率半径，并且第二内边缘具有第二曲率半径。在另一方面，选择第一内边缘直径，第二内边缘直径，第一曲率半径和第二曲率半径，使得延伸穿过孔的支撑销在最多两点处接触衬套组件。

5. 发明申请

WO2004015738A1 ETCH CHAMBER WITH DUAL FREQUENCY BIASING SOURCES AND A SINGLE FREQUENCY PLASMA GENERATING SOURCE 审中-公开
标题翻译：具有双频偏置源的ETCH室和单频等离子体生成源
公开(公告)号：WO2004015738A1
公开(公告)日：2004-02-19
申请号：PCT/US2003/024892
申请日：2003-08-07
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jin-Yuan , HOOSHDARAN, Frank, F. , PODLESNIK, Dragan, V.
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32706
摘要： A method and apparatus for selectively controlling a plasma in a processing chamber during wafer processing. The method includes providing process gasses into the chamber over a wafer to be processed, and providing high frequency RF power to a plasma generating element and igniting the process gases into the plasma. Modulated RF power is coupled to a biasing element, and wafer processing is performed according to a particular processing recipe. The apparatus includes a biasing element disposed in the chamber and adapted to support a wafer, and a plasma generating element disposed over the biasing element and wafer. A first power source is coupled to the plasma generating element, and a second power source is coupled to the biasing element. A third power source is coupled to the biasing element, wherein the second and third power sources provide a modulated signal to the biasing element.
摘要翻译：一种用于在晶片处理期间选择性地控制处理室中的等离子体的方法和装置。该方法包括在要处理的晶片上的室中提供过程气体，以及向等离子体产生元件提供高频RF功率，并将工艺气体点燃到等离子体中。调制的RF功率耦合到偏置元件，并且根据特定的处理配方执行晶片处理。该装置包括设置在腔室中并适于支撑晶片的偏置元件和设置在偏置元件和晶片上方的等离子体产生元件。第一电源耦合到等离子体发生元件，并且第二电源耦合到偏置元件。第三电源耦合到偏置元件，其中第二和第三电源向偏置元件提供调制信号。

6. 发明申请

WO2004015861A1 FIXED MATCHING NETWORK WITH INCREASED MATCH RANGE CAPABILITIES 审中-公开
标题翻译：固定匹配网络具有增加的匹配范围能力
公开(公告)号：WO2004015861A1
公开(公告)日：2004-02-19
申请号：PCT/US2003/024905
申请日：2003-08-07
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Jin-Yuan , JUN, Doug, S. , HOOSHDARAN, Frank, F.
IPC分类号： H03H7/40
CPC分类号： H01J37/32174 , H01J37/32082 , H03H7/38 , H03H21/0012
摘要： A matching network for performing frequency tuned matching between a source and a load. The matching network includes a first capacitor and first inductor, having fixed values, coupled in series from an input port to an output port. A second capacitor and second inductor, having fixed values, is coupled in series from one of the input port and output port to ground. The input port is adapted to receive a variable frequency RF signal and the output port is adapted to be coupled to a time-variant load impedance. The values of the first inductor and first capacitor are related by a first mathematical relationship, and the values of the second inductor and second capacitor are related by a second mathematical relationship. The substantial impedance range of the matching network enables a match to be maintained over a large fluctuation in load impedance.
摘要翻译：用于在源和负载之间执行频率调谐匹配的匹配网络。匹配网络包括具有从输入端口到输出端口串联耦合的固定值的第一电容器和第一电感器。具有固定值的第二电容器和第二电感器从输入端口和输出端口之一串联耦合到地。输入端口适于接收可变频率RF信号，并且输出端口适于耦合到时变负载阻抗。第一电感器和第一电容器的值通过第一数学关系相关，并且第二电感器和第二电容器的值通过第二数学关系相关联。匹配网络的实质阻抗范围使得能够在负载阻抗的大波动下保持匹配。

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