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1. 发明申请

WO2017099919A1 AMALGAMATED COVER RING 审中-公开
公开(公告)号：WO2017099919A1
公开(公告)日：2017-06-15
申请号：PCT/US2016/060823
申请日：2016-11-07
申请人： APPLIED MATERIALS, INC.
发明人： RAJ, Govinda , PANAVALAPPIL KUMARANKUTTY, Hanish Kumar , WU, Stanley
IPC分类号： H01L21/02 , H01L21/687 , H01L21/205 , H01L21/56
CPC分类号： H01L21/68721 , H01L21/68735 , H01L21/68757
摘要： The present disclosure generally relates to generally relates to equipment for performing semiconductor device fabrication, and more particularly, to a cover ring for partially covering a surface of a substrate support in high-density plasma chemical vapor deposition processing. In one embodiment, the cover ring may include an annular body, an inner support block with a beveled first edge for stability, one or more thermal breaks to increase thermal movement towards the outer diameter, a rounded shoulder to prevent particle deposition, an outer lip configured to a substrate support pedestal, a vertical appendage to support the substrate, and a thermally conductive coating disposed on the annular ring to direct thermal conductivity towards the outer edge of the ring and prevent particle accumulation.
摘要翻译：本发明总体上涉及用于执行半导体器件制造的设备，并且更具体地涉及用于在高密度等离子体化学气相沉积工艺中部分地覆盖基板支撑件的表面的覆盖环。在一个实施例中，盖环可以包括环形主体，具有用于稳定的倾斜的第一边缘的内支撑块，用于增加朝向外直径的热运动的一个或多个热断口，用于防止颗粒沉积的圆形肩部，其被配置为用于衬底支撑基座，用于支撑衬底的垂直附件以及设置在环形环上的导热涂层，以将热导率朝向环的外边缘引导并防止颗粒积聚。

2. 发明申请

WO2022010872A1 ELECTROSTATIC CHUCK WITH IMPROVED TEMPERATURE CONTROL 审中-公开
公开(公告)号：WO2022010872A1
公开(公告)日：2022-01-13
申请号：PCT/US2021/040476
申请日：2021-07-06
申请人： APPLIED MATERIALS, INC.
发明人： PANAVALAPPIL KUMARANKUTTY, Hanish Kumar , SEUTTER, Sean M. , GONDHALEKAR, Sudhir R. , BOYD, Wendell Glenn , RAMAMURTHI, Badri , ATHANI, Shekhar , KALAL, Anil Kumar , PINSON, Jay Dee, II
IPC分类号： H01L21/683 , H01L21/67 , H01L21/687 , H01J37/32 , H01J2237/2007 , H01J37/32724 , H01L21/67109 , H01L21/6833 , H01L21/6875
摘要： Embodiments of the disclosure provide electrostatic chucks for securing substrates during processing. Some embodiments of this disclosure provide methods and apparatus for increased temperature control across the radial profile of the substrate. Some embodiments of the disclosure provide methods and apparatus for providing control of hydrogen concentration in processed films during a high-density plasma (HDP) process.

3. 发明申请

WO2023039086A1 HEATED LID FOR A PROCESS CHAMBER 审中-公开
公开(公告)号：WO2023039086A1
公开(公告)日：2023-03-16
申请号：PCT/US2022/042934
申请日：2022-09-08
申请人： APPLIED MATERIALS, INC.
发明人： HIREMATH, Shivaprakash Padadayya , PANAVALAPPIL KUMARANKUTTY, Hanish Kumar , SHANMUGAM, Kirubanandan Naina , KRISHNA, Madhukar , DHARMAPURA SATHYANARAYANAMURTHY, Sriharsha , SRINIVASAN, Sriharish
IPC分类号： C23C16/455 , C23C16/507
摘要： Embodiments of heated lids for a process chamber are provided herein. In some embodiments, a heated lid includes: a body having a central region and a peripheral region, wherein the body includes a central opening in the central region, wherein the peripheral region includes a plurality of vertical slots that extend into an upper surface of the body and arranged along a circle to provide a thermal break, and wherein the body includes one or more annular plenums that extend into the upper surface of the body and a plurality of holes extending through a bottom surface of the one or more annular plenums to a lower surface of the body; a first heater ring having one or more heating elements disposed therein, wherein the first heater ring is coupled to the central region of the body; and a second heater ring having one or more heating elements disposed therein.

4. 发明申请

WO2023038897A1 ATOMIC LAYER DEPOSITION PART COATING CHAMBER 审中-公开
公开(公告)号：WO2023038897A1
公开(公告)日：2023-03-16
申请号：PCT/US2022/042640
申请日：2022-09-06
申请人： APPLIED MATERIALS, INC.
发明人： RICE, Michael R. , PANAVALAPPIL KUMARANKUTTY, Hanish Kumar , MARCUS, Steven D. , SHANMUGAM, Kirubanandan Naina , DHARMAPURA SATHYANARAYANAMURTHY, Sriharsha , KRISHNA, Madhukar , HIREMATH, Shivaprakash Padadayya , NATTAMAI SUBRAMANIAN, Senthil Kumar , CHERUBALA PATHAYAPURA, Sankar Menon
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458
摘要： Methods and apparatus for coating processing reactor component parts are provided herein. In some embodiments, a part coating reactor includes: a lower body and a lid assembly that together define and enclose an interior volume; one or more heaters disposed in the lid assembly; one or more coolant channels disposed in the lid assembly to flow a heat transfer medium therethrough; a plurality of gas passages disposed through the lid assembly to facilitate providing one or more gases to the interior volume, wherein the plurality of gas passages include a plurality of fluidly independent plenums disposed in the lid assembly; and one or more mounting brackets to facilitate coupling a workpiece to the lid assembly.

5. 发明申请

WO2019236275A1 APPARATUS FOR SUPPRESSING PARASITIC PLASMA IN PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION CHAMBER 审中-公开
公开(公告)号：WO2019236275A1
公开(公告)日：2019-12-12
申请号：PCT/US2019/033110
申请日：2019-05-20
申请人： APPLIED MATERIALS, INC.
发明人： ADDEPALLI, Sai Susmita , KATAMBLI, Satish , KULKARNI, Mayur Govind , PANAVALAPPIL KUMARANKUTTY, Hanish Kumar , PRABHAKAR, Vinay K. , HAMMOND, Edward P., IV , ROCHA, Juan Carlos
IPC分类号： H01J37/32 , C23C16/505 , C23C16/458
摘要： Embodiments of the present disclosure generally relate to a metal shield to be used in a PECVD chamber. The metal shield includes a substrate support portion and a shaft portion. The shaft portion includes a tubular wall having a wall thickness. The tubular wall has a supply channel of a coolant channel and a return channel of the coolant channel embedded therein. Each of the supply channel and the return channel is a helix in the tubular wall. The helical supply channel and the helical return channel have the same direction of rotation and are parallel to each other. The supply channel and the return channel are interleaved in the tubular wall. With the supply channel and return channel interleaved in the metal shield, the thermal gradient in the metal shield is reduced.

6. 发明申请

WO2017091331A1 ON-BOARD METROLOGY (OBM) DESIGN AND IMPLICATION IN PROCESS TOOL 审中-公开
标题翻译：在工艺工具中的板上计量（OBM）设计和影响
公开(公告)号：WO2017091331A1
公开(公告)日：2017-06-01
申请号：PCT/US2016/059944
申请日：2016-11-01
申请人： APPLIED MATERIALS, INC.
发明人： PAUL, Khokan C. , PINSON, Jay D., II , ROCHA-ALVAREZ, Juan Carlos , PONNEKANTI, Hari K. , CHOUDHURY, Rupankar , ATHANI, Shekhar , KUMPALA, Sandeep , PANAVALAPPIL KUMARANKUTTY, Hanish Kumar
IPC分类号： H01L21/02 , H01L21/66 , H01L21/265
CPC分类号： H01L21/67253 , G05B19/041 , G05B19/401 , G05B2219/31459 , G05B2219/40066 , H01L21/67196 , H01L21/67201 , H01L21/67207 , H01L21/67389 , H01L21/67724 , H01L21/67775 , H01L21/68707 , H01L21/68764
摘要： Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.
摘要翻译：本公开的实施方式总体上涉及改进的工厂接口，该工厂接口与配置用于测量基板的膜特性的机载测量外壳耦合。在一个实施方式中，装置包括工厂接口和通过加载端口可移除地耦合到工厂接口的计量学外壳，计量外壳包括用于测量待传送到计量外壳中的基板的性质的机载计量组件。

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