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1. 发明申请

WO2017189194A1 TEMPERATURE CONTROLLED REMOTE PLASMA CLEAN FOR EXHAUST DEPOSIT REMOVAL 审中-公开
标题翻译：温度控制的远程等离子清洁用于排气清理
公开(公告)号：WO2017189194A1
公开(公告)日：2017-11-02
申请号：PCT/US2017/025999
申请日：2017-04-04
申请人： APPLIED MATERIALS, INC.
发明人： HILKENE, Martin A. , CARLSON, David K. , SCOTNEY-CASTLE, Matthew D.
IPC分类号： B01D53/32
摘要： Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.
摘要翻译：本公开的实施例总体上涉及用于清洁排气系统的方法和设备，例如与用于形成外延硅的处理室一起使用的排气系统。排气系统包括用于通过排气系统供应电离气体的远程等离子体源以及位于远程等离子体源下游的一个或多个温度传感器。

2. 发明申请

WO2013043605A1 SURFACE STABILIZATION PROCESS TO REDUCE DOPANT DIFFUSION 审中-公开
标题翻译：表面稳定过程减少痰液扩散
公开(公告)号：WO2013043605A1
公开(公告)日：2013-03-28
申请号：PCT/US2012/055924
申请日：2012-09-18
申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew S. , HILKENE, Martin A.
发明人： ROGERS, Matthew S. , HILKENE, Martin A.
IPC分类号： H01L21/22 , H01L21/324 , H01L21/8247 , H01L27/115
CPC分类号： H01L21/28273 , H01J37/32357 , H01L21/3211 , H01L21/32155 , H01L21/324 , H01L27/11521
摘要： A method for incorporating radicals of a plasma into a substrate or a material on a semiconductor substrate using a remote plasma source. In one embodiment, a method for processing doped materials on a substrate surface is provided and includes forming a doped layer on a substrate and optionally cleaning the doped layer, such as by a wet clean process. The method also includes generating an ionized nitrogen plasma in a remote plasma source, wherein the ionized nitrogen plasma has an ion concentration within a range from about 0.001% to about 0.1%, de-ionizing the ionized nitrogen plasma while forming non-ionized nitrogen plasma. The method further includes flowing the non-ionized nitrogen plasma into a processing region within a processing chamber, forming a nitrided capping layer from an upper portion of the doped layer by exposing the doped layer within the processing region to the non-ionized nitrogen plasma during a stabilization process.
摘要翻译：一种使用远程等离子体源将等离子体的自由基引入衬底或半导体衬底上的材料的方法。在一个实施例中，提供了用于在衬底表面上处理掺杂材料的方法，并且包括在衬底上形成掺杂层并且可选地例如通过湿式清洁工艺清洁掺杂层。该方法还包括在远程等离子体源中产生电离氮等离子体，其中离子化的氮等离子体的离子浓度在约0.001％至约0.1％的范围内，使离子化的氮等离子体离子化，同时形成非离子化的氮等离子体。该方法还包括将非电离氮等离子体流入处理室内的处理区域，通过将处理区域内的掺杂层暴露于非电离氮等离子体，从而从掺杂层的上部形成氮化覆盖层一个稳定的过程。

3. 发明申请

WO2022047299A1 METHOD AND HARDWARE FOR POST MAINTENANCE VACUUM RECOVERY SYSTEM 审中-公开
公开(公告)号：WO2022047299A1
公开(公告)日：2022-03-03
申请号：PCT/US2021/048226
申请日：2021-08-30
申请人： APPLIED MATERIALS, INC.
发明人： HILKENE, Martin A.
IPC分类号： H01L21/67
摘要： A method and system for vacuum chamber integrity verification after chamber maintenance or venting. The method includes a computing system causing a measurement cycle that includes causing a pump to pump down pressure of the vacuum chamber for a set duration of time or to a target pressure; causing an isolation valve to isolate the vacuum chamber; receiving sensor data from an optical emission sensor; and analyzing the sensor data to determine whether the sensor data satisfies one or more sensor data criteria. The method further includes, the computing system, causing one or more repetitions of the measurement cycle until the sensor data meets the one or more sensor data criteria. The method further includes analyzing the sensor data that meets the sensor data criteria to determine at least one of vacuum chamber leak rate or vacuum chamber moisture content. The system includes the vacuum chamber, pump, isolation valve, optical emission sensor, and computing system.

4. 发明申请

WO2011008436A2 METHOD FOR REMOVING IMPLANTED PHOTO RESIST FROM HARD DISK DRIVE SUBSTRATES 审中-公开
标题翻译：从硬盘驱动器基板去除注入光敏抗蚀剂的方法
公开(公告)号：WO2011008436A2
公开(公告)日：2011-01-20
申请号：PCT/US2010/039531
申请日：2010-06-22
申请人： APPLIED MATERIALS, INC. , HILKENE, Martin A. , FOAD, Majeed A. , SCOTNEY-CASTLE, Matthew D. , GOUK, Roman , VERHAVERBEKE, Steven , PORSHNEV, Peter
发明人： HILKENE, Martin A. , FOAD, Majeed A. , SCOTNEY-CASTLE, Matthew D. , GOUK, Roman , VERHAVERBEKE, Steven , PORSHNEV, Peter
IPC分类号： G11B5/84
CPC分类号： G11B5/84 , G03F7/427
摘要： A method of removing resist material from a substrate having a magnetically active surface is provided. The substrate is disposed in a processing chamber and exposed to a fluorine-containing plasma formed from a gas mixture having a reagent, an oxidizing agent, and a reducing agent. A cleaning agent may also be included. The substrate may be cooled by back-side cooling or by a cooling process wherein a cooling medium is provided to the processing chamber while the plasma treatment is suspended. Substrates may be flipped over for two-sided processing, and multiple substrates may be processed concurrently.
摘要翻译：提供了一种从具有磁活性表面的衬底去除抗蚀剂材料的方法。将基板配置在处理室内，使其暴露于由含有试剂，氧化剂和还原剂的气体混合物形成的含氟等离子体。清洁剂也可以包括在内。衬底可以通过背面冷却或冷却过程来冷却，其中冷却介质在等离子体处理暂停时被提供给处理室。基板可翻转进行双面处理，并可同时处理多个基板。

5. 发明申请

WO2012125317A2 METHODS AND APPARATUS FOR CONFORMAL DOPING 审中-公开
标题翻译：方法和装置的一致性排除
公开(公告)号：WO2012125317A2
公开(公告)日：2012-09-20
申请号：PCT/US2012/027659
申请日：2012-03-05
申请人： APPLIED MATERIALS, INC. , SANTHANAM, Kartik , HILKENE, Martin A. , VELLAIKAL, Manoj , LEE, Mark R. , SCOTNEY-CASTLE, Matthew D. , PORSHNEV, Peter I.
发明人： SANTHANAM, Kartik , HILKENE, Martin A. , VELLAIKAL, Manoj , LEE, Mark R. , SCOTNEY-CASTLE, Matthew D. , PORSHNEV, Peter I.
IPC分类号： H01L21/265
CPC分类号： H01L21/2236 , H01J37/32412 , H01J37/32623 , H01J37/32669 , H01L21/324
摘要： Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of doping a substrate may include forming a dopant region on a substrate by implanting one or more dopant elements into the dopant region of the substrate using a plasma doping process; forming a cap layer atop the dopant region; annealing the dopant region after forming the cap layer; and removing the cap layer after annealing the dopant region.
摘要翻译：本文提供了用于处理衬底的方法和设备。在一些实施例中，掺杂衬底的方法可以包括通过使用等离子体掺杂工艺将一个或多个掺杂剂元素注入衬底的掺杂剂区域来在衬底上形成掺杂剂区域; 在掺杂剂区域的顶部形成帽层; 在形成盖层之后退火掺杂剂区域; 并且在退火掺杂剂区域之后去除覆盖层。

6. 发明申请

WO2012036963A2 INTEGRATED PLATFORM FOR IN-SITU DOPING AND ACTIVATION OF SUBSTRATES 审中-公开
标题翻译：用于原位掺杂和衬底激活的集成平台
公开(公告)号：WO2012036963A2
公开(公告)日：2012-03-22
申请号：PCT/US2011/050759
申请日：2011-09-08
申请人： APPLIED MATERIALS, INC. , SANTHANAM, Kartik , HILKENE, Martin A. , SCOTNEY-CASTLE, Matthew D. , PORSHNEV, Peter I. , SRINIVASAN, Swaminathan , RAMAMURTHY, Sundar
发明人： SANTHANAM, Kartik , HILKENE, Martin A. , SCOTNEY-CASTLE, Matthew D. , PORSHNEV, Peter I. , SRINIVASAN, Swaminathan , RAMAMURTHY, Sundar
IPC分类号： H01L21/265 , H01L21/22
CPC分类号： H01L21/2236 , H01L21/324 , H01L21/67207
摘要： An integrated platform for processing substrates, comprising: a vacuum substrate transfer chamber; a doping chamber coupled to the vacuum substrate transfer chamber, the doping chamber configured to implant or deposit dopant elements in or on a surface of a substrate; a dopant activation chamber coupled to the vacuum substrate transfer chamber, the dopant activation chamber configured to anneal the substrate and activate the dopant elements; and a controller configured to control the integrated platform, the controller comprising a computer readable media having instructions stored thereon that, when executed by the controller, causes the integrated platform to perform a method, the method comprising: doping a substrate with one or more dopant elements in the doping chamber; transferring the substrate under vacuum to the dopant activation chamber; and annealing the substrate in the dopant activation chamber to activate the dopant elements.
摘要翻译：一种用于处理衬底的集成平台，包括：真空衬底传送室; 耦合到所述真空衬底传输室的掺杂室，所述掺杂室被配置成将掺杂剂元素注入或沉积在衬底的表面中或衬底上; 耦合到所述真空衬底传输室的掺杂剂激活室，所述掺杂剂激活室被配置为退火所述衬底并激活所述掺杂剂元素; 以及配置成控制所述集成平台的控制器，所述控制器包括其上存储有指令的计算机可读介质，所述指令在由所述控制器执行时使所述集成平台执行方法，所述方法包括：用一种或多种掺杂剂掺杂室中的元素; 在真空下将衬底转移到掺杂剂激活室; 以及在掺杂剂活化室中退火衬底以激活掺杂剂元素。

7. 发明申请

WO2009085965A1 REMOVAL OF SURFACE DOPANTS FROM A SUBSTRATE 审中-公开
标题翻译：从基板上去除表面掺杂物
公开(公告)号：WO2009085965A1
公开(公告)日：2009-07-09
申请号：PCT/US2008/087446
申请日：2008-12-18
申请人： APPLIED MATERIALS, INC. , RAMASWAMY, Kartik , COLLINS, Kenneth S. , GALLO, Biagio , HANAWA, Hiroji , FOAD, Majeed A. , HILKENE, Martin A. , SANTHANAM, Kartik , SCOTNEY-CASTLE, Matthew D.
发明人： RAMASWAMY, Kartik , COLLINS, Kenneth S. , GALLO, Biagio , HANAWA, Hiroji , FOAD, Majeed A. , HILKENE, Martin A. , SANTHANAM, Kartik , SCOTNEY-CASTLE, Matthew D.
IPC分类号： H01L21/265 , H01L21/306
CPC分类号： H01L21/2254 , H01L21/2253
摘要： A method and apparatus for removing excess dopant from a doped substrate is provided. In one embodiment, a substrate is doped by surfaced deposition of dopant followed by formation of a capping layer and thermal diffusion drive-in. A reactive etchant mixture is provided to the process chamber, with optional plasma, to etch away the capping layer and form volatile compounds by reacting with excess dopant. In another embodiment, a substrate is doped by energetic implantation of dopant. A reactive gas mixture is provided to the process chamber, with optional plasma, to remove excess dopant adsorbed on the surface and high-concentration dopant near the surface by reacting with the dopant to form volatile compounds. The reactive gas mixture may be provided during thermal treatment, or it may be provided before or after at temperatures different from the thermal treatment temperature. The volatile compounds are removed. Substrates so treated do not form toxic compounds when stored or transported outside process equipment.
摘要翻译：提供了用于从掺杂衬底去除多余掺杂剂的方法和装置。在一个实施例中，通过表面沉积掺杂剂掺杂衬底，然后形成覆盖层和热扩散驱入。将反应性蚀刻剂混合物与任选的等离子体提供给处理室，以通过与多余的掺杂剂反应来蚀刻掉覆盖层并形成挥发性化合物。在另一个实施例中，通过掺杂剂的高能注入来掺杂衬底。通过与掺杂剂反应形成挥发性化合物，将具有任选等离子体的反应气体混合物提供给处理室，以除去吸附在表面上的多余掺杂物和表面附近的高浓度掺杂剂。反应性气体混合物可以在热处理期间提供，或者可以在与热处理温度不同的温度之前或之后提供。除去挥发性化合物。如此处理的基材在储存或运输到工艺设备外时不会形成有毒化合物。

8. 发明申请

WO2022060921A1 ATOMIC OXYGEN DETECTION IN SEMICONDUCTOR PROCESSING CHAMBERS 审中-公开
公开(公告)号：WO2022060921A1
公开(公告)日：2022-03-24
申请号：PCT/US2021/050574
申请日：2021-09-16
申请人： APPLIED MATERIALS, INC.
发明人： ADAMS, Bruce E. , HOWELLS, Samuel C. , HILKENE, Martin A. , MARIN, Jose Antonio
IPC分类号： H01L21/67 , H01J37/32 , G01N27/12
摘要： Semiconductor processing systems are described to measure levels of atomic oxygen using an atomic oxygen sensor positioned within a substrate processing region of a substrate processing chamber. The processing systems may include a semiconductor chamber that has a chamber body which defines a substrate processing region. The processing chamber may also include a substrate support positioned within the substrate processing region. The atomic oxygen sensor may be positioned proximate to the substrate support in the substrate processing region of the chamber. Also described are semiconductor processing methods that include detecting a concentration of atomic oxygen in the substrate processing region with an atomic oxygen sensor positioned in the semiconductor processing chamber. The atomic oxygen sensor may include at least one electrode comprising a material selectively permeable to atomic oxygen over molecular oxygen, and may further include a solid electrolyte that selectively conducts atomic oxygen ions.

9. 发明申请

WO2021025819A1 METHODS FOR DETECTION USING OPTICAL EMISSION SPECTROSCOPY 审中-公开
公开(公告)号：WO2021025819A1
公开(公告)日：2021-02-11
申请号：PCT/US2020/041172
申请日：2020-07-08
申请人： APPLIED MATERIALS, INC.
发明人： ZHU, Zuoming , HILKENE, Martin A. , SHERVEGAR, Avinash , SRIVASTAVA, Surendra Singh , MORADIAN, Ala , LAU, Shu-Kwan Danny , YE, Zhiyuan , CHOO, Enle , CHANG, Flora Fong-Song , MARATH SANKARATHODI, Bindusagar , LIU, Patricia M. , SANCHEZ, Errol Antonio C. , LIN, Jenny , MYO, Nyi O. , CHU, Schubert
IPC分类号： C30B25/16 , G01N15/02
摘要： One or more embodiments herein relate to methods for detection using optical emission spectroscopy. In these embodiments, an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

10. 发明申请

WO2020236408A1 PROCESSING CHAMBER FOR THERMAL PROCESSES 审中-公开
公开(公告)号：WO2020236408A1
公开(公告)日：2020-11-26
申请号：PCT/US2020/030380
申请日：2020-04-29
申请人： APPLIED MATERIALS, INC.
发明人： LAU, Shu-Kwan , YE, Zhiyuan , HILKENE, Martin A.
IPC分类号： H01L21/67 , B01J19/12
摘要： Embodiments of the disclosure include methods and apparatus for a thermal chamber with a low thermal mass. In one embodiment, a chamber is disclosed that includes a body, a susceptor positioned within the body, a first set of heating devices positioned in an upper portion of the body above the susceptor and a second set of heating devices positioned in a lower portion of the body below the susceptor, wherein each of the first set of heating devices have a heating element having a longitudinal axis extending in a first direction, and each of the second set of heating devices have a heating element having a longitudinal axis extending in a second direction that is orthogonal to the first direction, and wherein each of the heating elements have ends that are exposed to ambient environment.

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