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1. 发明申请

WO2003044025A1 NITROGEN ANALOGS OF COPPER II ß-DIKETONATES AS SOURCE REAGENTS FOR SEMICONDUCTOR PROCESSING 审中-公开
标题翻译：作为半导体加工的源试剂的二氧化ß酮的硝酸类似物
公开(公告)号：WO2003044025A1
公开(公告)日：2003-05-30
申请号：PCT/US2002/036301
申请日：2002-11-13
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , CHIN, Barry
IPC分类号： C07F1/08
CPC分类号： C07C251/08
摘要： Nitrogen containing analogs of Copper II β-diketonates which analogs are more stable source reagents for copper deposition when substantially free of solvents of excess ligands. The nitrogen containing analogs replace -O- with -N(R")- wherein R" is an alkyl group having from one to four carbon atoms. Replacement of each -O- is preferred although replacement of one -O- per cyclic ring is sufficient to improve stability of the copper source reagents. The source reagent can be purified by sublimation to remove solvents and excess ligands prior to semiconductor processing.
摘要翻译：含铜的类似物铜IIβ-二酮类似物，当基本上不含过量配体的溶剂时，类似物是用于铜沉积的更稳定的源试剂。含氮类似物用-NR“取代-O-，其中R”是具有1-4个碳原子的烷基。每个-O-的替代是优选的，尽管每个环的一个-O-取代足以提高铜源试剂的稳定性。源试剂可以通过升华纯化，以在半导体加工之前除去溶剂和过量的配体。

2. 发明申请

WO2003035927A2 GAS DELIVERY APPARATUS FOR ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：用于原子层沉积的气体输送装置
公开(公告)号：WO2003035927A2
公开(公告)日：2003-05-01
申请号：PCT/US2002/034553
申请日：2002-10-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , KU, Vincent , WU, Dien-Yeh , CHUNG, Hua , OUYE, Alan , NAKASHIMA, Norman , CHANG, Mei
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/4411 , C23C16/45504 , C23C16/45508 , C23C16/45512 , C23C16/45544 , C23C16/45563 , C23C16/45582 , H01L21/28562
摘要： An apparatus and method for performing a cyclical layer deposition process, such as atomic layer deposition is provided. In one aspect, the apparatus includes a substrate support having a substrate receiving surface, and a chamber lid comprising a tapered passageway extending from a central portion of the chamber lid and a bottom surface extending from the passageway to a peripheral portion of the chamber lid, the bottom surface shaped and sized to substantially cover the substrate receiving surface. The apparatus also includes one or more valves coupled to the gradually expanding channel, and one or more gas sources coupled to each valve.
摘要翻译：提供了用于执行诸如原子层沉积的循环层沉积工艺的装置和方法。在一个方面，该装置包括具有基板接收表面的基板支撑件和腔室盖，腔室盖包括从腔室盖的中心部分延伸的锥形通道和从通道延伸到腔室盖的周边部分的底表面，底表面的形状和尺寸被设计成基本覆盖基板接收表面。该设备还包括一个或多个连接到逐渐扩大的通道的阀门，以及一个或多个连接到每个阀门的气源。

3. 发明申请

WO2003028090A2 INTEGRATION OF BARRIER LAYER AND SEED LAYER 审中-公开
标题翻译：障碍层和种植层的整合
公开(公告)号：WO2003028090A2
公开(公告)日：2003-04-03
申请号：PCT/US2002/028715
申请日：2002-09-09
申请人： APPLIED MATERIALS, INC.
发明人： CHUNG, Hua , CHEN, Ling , YU, Jick , CHANG, Mei
IPC分类号： H01L21/768
CPC分类号： C23C14/06 , C23C30/00 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L2924/0002 , H01L2924/00
摘要： The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.
摘要翻译：本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。在另一个实施例中，种子层包括第一种子层和第二种子层。第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。

4. 发明申请

WO2002069380A2 ATOMICALLY THIN HIGHLY RESISTIVE BARRIER LAYER IN A COPPER VIA 审中-公开
标题翻译：在铜中通常具有较高的电阻屏障层
公开(公告)号：WO2002069380A2
公开(公告)日：2002-09-06
申请号：PCT/US2002/005576
申请日：2002-02-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Fusen , CHEN, Ling
IPC分类号： H01L21/285
CPC分类号： H01L21/76844 , C23C14/165 , C23C14/3407 , C23C16/45525 , C23C28/00 , C25D7/123 , H01J37/026 , H01J2237/0047 , H01J2237/3175 , H01L21/2855 , H01L21/28562 , H01L21/76805 , H01L21/76831 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , Y10T428/24802 , Y10T428/24917 , Y10T428/265 , H01L2924/00
摘要： A method of forming a copper via and the resultant structure. A thin layer of an insulating barrier material, such as aluminum oxide or tantalum nitride, is conformally coated onto the sides and bottom of the via hole, for example, by atomic layer deposition (ALD) to a thickness of less than 5nm, preferably less than 2nm and having an electrical resistivity of more than 500 microohm-cm. A copper seed layer is then deposited under conditions such that copper is deposited on the via sidewalls but not deposited over most of the bottom of via hole. Instead energetic copper ions sputter the barrier material from the via bottom. Copper is electroplated into the via hole lined only on its sidewalls with the barrier. The invention preferably extends also to dual-damascene structures in which the copper seed sputter process sputters the barrier layer from the via bottom but not the trench floor.
摘要翻译：形成铜通孔的方法和所得结构。诸如氧化铝或氮化钽的绝缘阻挡材料（30）的薄层例如通过原子层沉积（ALD）共形地涂覆在通孔的侧面和底部上，厚度小于5nm ，优选小于2nm，并具有大于500微欧姆·厘米的电阻率。然后在使得铜沉积在通孔侧壁上但不沉积在通孔的大部分底部的条件下沉积铜籽晶层（40）。相反，高能铜离子从通孔底部溅射阻挡材料。铜（50）被电镀到仅在其侧壁上排列的通孔中。本发明还优选地延伸到双镶嵌结构，其中铜种子溅射处理从通孔底部而不是沟槽底部喷射阻挡层。

5. 发明申请

WO2004106584A1 METHOD AND APPARATUS FOR GENERATING A PRECURSOR FOR A SEMICONDUCTOR PROCESSING SYSTEM 审中-公开
标题翻译：用于生成半导体加工系统前驱体的方法和装置
公开(公告)号：WO2004106584A1
公开(公告)日：2004-12-09
申请号：PCT/US2004/016715
申请日：2004-05-27
申请人： APPLIED MATERIALS, INC. , CHEN, Ling , KU, Vincent W. , CHUNG, Hua , MARCADAL, Christophe , GANGULI, Seshadri , LIN, Jenny , WU, Dien-Yeh , OUYE, Alan , CHANG, Mei
发明人： CHEN, Ling , KU, Vincent W. , CHUNG, Hua , MARCADAL, Christophe , GANGULI, Seshadri , LIN, Jenny , WU, Dien-Yeh , OUYE, Alan , CHANG, Mei
IPC分类号： C23C16/44
CPC分类号： C23C16/45525 , C23C16/18 , C23C16/34 , C23C16/4481 , C23C16/4487 , H01L21/28562 , H01L21/76843
摘要： Embodiments of the present invention are directed to an apparatus for generating a precursor for a semiconductor processing system (320). The apparatus includes a canister (300) having a sidewall (402), a top portion and a bottom portion. The canister (300) defines an interior volume (438) having an upper region (418) and a lower region (434). In one embodiment, the apparatus further includes a heater (430) partially surrounding the canister (300). The heater (430) creates a temperature gradient between the upper region (418) and the lower region (434). Also claimed is a method of forming a barrier layer from purified pentakis (dimethylamido) tantalum, for example a tantalum nitride barrier layer by atomic layer deposition.
摘要翻译：本发明的实施例涉及一种用于产生用于半导体处理系统（320）的前体的装置。该装置包括具有侧壁（402），顶部和底部的罐（300）。罐（300）限定具有上部区域（418）和下部区域（434）的内部容积（438）。在一个实施例中，该装置还包括部分地包围罐（300）的加热器（430）。加热器（430）在上部区域（418）和下部区域（434）之间产生温度梯度。还要求保护的是通过原子层沉积从纯化的五（二甲基氨基）钽，例如氮化钽阻挡层形成阻挡层的方法。

6. 发明申请

WO2003102266A1 DEPOSITION OF COPPER FILMS 审中-公开
标题翻译：铜箔沉积
公开(公告)号：WO2003102266A1
公开(公告)日：2003-12-11
申请号：PCT/US2003/017367
申请日：2003-06-02
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , NORMAN, John, A. , CHANG, Mei
IPC分类号： C23C16/455
CPC分类号： H01L21/76877 , C23C16/045 , C23C16/18 , C23C16/45553 , H01L21/28562
摘要： A method of forming a copper film on a substrate is described. The copper film is formed using a cyclical deposition technique by alternately adsorbing a copper-containing precursor and a reducing gas on a substrate. One or more of the time intervals for the copper-containing precursor, the time intervals for the reducing gas and the time intervals of non-pulsing may have different values for one or more deposition cycles of the cyclical deposition process. The copper film formation is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the copper film may be used as interconnect metallization.
摘要翻译：描述了在基板上形成铜膜的方法。使用循环沉积技术通过在基底上交替吸附含铜前体和还原气体来形成铜膜。含铜前体的一个或多个时间间隔，还原气体的时间间隔和非脉冲的时间间隔对于循环沉积过程的一个或多个沉积循环可以具有不同的值。铜膜形成与集成电路制造工艺兼容。在一个集成电路制造工艺中，铜膜可以用作互连金属化。

7. 发明申请

WO2003038892A2 INTEGRATION OF ALD TANTALUM NITRIDE AND ALPHA-PHASE TANTALUM FOR COPPER METALLIZATION APPLICATION 审中-公开
标题翻译：用于铜冶金应用的氮化钛和氮化钛的整合
公开(公告)号：WO2003038892A2
公开(公告)日：2003-05-08
申请号：PCT/US2002/034277
申请日：2002-10-25
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , CHUNG, Hua , SEUTTER, Sean, M. , YANG, Michael, X. , YI, Ming , KU, Vincent , WU, Dien-Yeh , OUYE, Alan , NAKASHIMA, Norman , CHIN, Barry , ZHANG, Hong
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C16/4411 , C23C16/45508 , C23C16/45512 , C23C16/45525 , C23C16/45563 , C23C16/45582 , H01L21/28562 , H01L21/76871
摘要： A method for forming a metal interconnect on a substrate is provided. In one aspect, the method comprises depositing a refractory metal containing barrier layer having a thickness that exhibits a crystalline like structure and is sufficient to inhibit atomic migration on at least a portion of a metal layer by alternately introducing one or more pulses of a metal-containing compound and one or more pulses of a nitrogen-containing compound; depositing a seed layer on at least a portion of the barrier layer; and depositing a second metal layer on at least a portion of the seed layer.
摘要翻译：提供了一种在基板上形成金属互连的方法。一方面，该方法包括沉积具有呈现结晶相似结构的厚度的含难熔金属阻挡层，并且足以通过交替引入一个或多个金属 - 氧化物的脉冲来抑制金属层的至少一部分上的原子迁移，含氮化合物和一种或多种含氮化合物的脉冲; 在所述阻挡层的至少一部分上沉积种子层; 以及在种子层的至少一部分上沉积第二金属层。

8. 发明申请

WO2004064147A2 INTEGRATION OF ALD/CVD BARRIERS WITH POROUS LOW K MATERIALS 审中-公开
标题翻译： ALD / CVD阻挡层与多孔低K材料的整合
公开(公告)号：WO2004064147A2
公开(公告)日：2004-07-29
申请号：PCT/US2003/040857
申请日：2003-12-19
申请人： APPLIED MATERIALS, INC.
发明人： CHUNG, Hua , BEKIARIS, Nikolaos , MARCADAL, Christophe , CHEN, Ling
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , C23C16/34 , H01L21/02063 , H01L21/28556 , H01L21/28562 , H01L21/31116 , H01L21/76802 , H01L21/76814 , H01L21/76838 , H01L21/76873 , H01L21/76876
摘要： A method for processing substrates is provided. The method includes depositing and etching a low k dielectric layer on a substrate, pre-cleaning the substrate with a plasma, and depositing a barrier layer on the substrate. Pre-cleaning the substrate minimizes the diffusion of the barrier layer into the low k dielectric layer and/or enhances the deposition of the barrier layer.
摘要翻译：提供了一种用于处理基板的方法。该方法包括在衬底上沉积并蚀刻低k电介质层，用等离子体预清洁衬底，以及在衬底上沉积阻挡层。预清洁衬底使阻挡层扩散到低k电介质层中和/或增强阻挡层的沉积最小化。

9. 发明申请

WO2004053947A2 TITANIUM SILICON NITRIDE (TISIN) BARRIER LAYER FOR COPPER DIFFUSION 审中-公开
标题翻译：用于铜扩散的氮化硅钛（TISIN）阻挡层
公开(公告)号：WO2004053947A2
公开(公告)日：2004-06-24
申请号：PCT/US2003/019813
申请日：2003-06-23
申请人： APPLIED MATERIALS, INC.
发明人： MARCADAL, Christophe , CHEN, Ling
IPC分类号： H01L21/00
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45531 , H01L21/28562 , H01L21/76846 , Y10T428/24926
摘要： Methods and an apparatus of forming a titanium silicon nitride (TiSiN) layer are disclosed. The titanium silicon nitride (TiSiN) layer may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor, a silicon-containing gas and a nitrogen-containing gas on a substrate. The titanium-containing precursor, the silicon-containing gas and the nitrogen-containing gas react to form the titanium silicon nitride (TiSiN) layer on the substrate. The formation of the titanium silicon nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, a titanium silicon nitride (TiSiN) layer may be used as a diffusion barrier for a copper metallization process.
摘要翻译：公开了形成氮化硅钛（TiSiN）层的方法和装置。通过在衬底上交替地吸附含钛前体，含硅气体和含氮气体，可以使用循环沉积工艺形成氮化钛硅（TiSiN）层。含钛前驱物，含硅气体和含氮气体反应以在衬底上形成钛硅氮化物（TiSiN）层。钛硅氮化物（TiSiN）层的形成与集成电路制造工艺兼容。在一个集成电路制造工艺中，氮化硅钛（TiSiN）层可以用作铜金属化工艺的扩散阻挡层。

10. 发明申请

WO2004007792A2 METHOD OF FILM DEPOSITION USING ACTIVATED PRECURSOR GASES 审中-公开
标题翻译：使用活化的前驱气体沉积薄膜的方法
公开(公告)号：WO2004007792A2
公开(公告)日：2004-01-22
申请号：PCT/US2003/019706
申请日：2003-06-23
申请人： APPLIED MATERIALS, INC.
发明人： CHUNG, Hua , KU, Vincent, W. , CHEN, Ling
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C23C16/34 , C23C16/4488 , C23C16/452
摘要： A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.
摘要翻译：提供了一种用于在基板上沉积膜的方法。在一个方面，该方法包括向活化区提供含金属前体，并活化含金属前体以形成活化的前体。将活化的前体气体输送到反应室，并且使用循环沉积工艺在基板上沉积膜，其中活化的前体气体和还原性气体交替地吸附在基板上。还提供了使用活化的还原气体在基底上沉积膜的方法。

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