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1. 发明申请

WO2018132424A1 RESISTIVITY-BASED ADJUSTMENT OF MEASUREMENTS FROM IN-SITU MONITORING 审中-公开
公开(公告)号：WO2018132424A1
公开(公告)日：2018-07-19
申请号：PCT/US2018/013092
申请日：2018-01-10
申请人： APPLIED MATERIALS, INC.
发明人： XU, Kun , CARLSSON, Ingemar , SHEN, Shih-Haur , SWEDEK, Boguslaw A. , LIU, Tzu-Yu
IPC分类号： H01L21/67 , H01L21/304 , H01L21/3105 , H01L21/321
摘要： A first resistivity value and a correlation function relating thickness of a conductive layer having the first resistivity value to a signal from an in-situ monitoring system are stored. A second resistivity value for a conductive layer on a substrate is received. A sequence of signal values that depend on thickness of the conductive layer is received from an in-situ electromagnetic induction monitoring system that monitors the substrate during polishing. A sequence of thickness values is generated based on the sequence of signal values and the correlation function. For at least some thickness values of the sequence of thickness values adjusted thickness values are generated that compensate for variation between the first resistivity value and the second resistivity value to generate a sequence of adjusted thickness values. A polishing endpoint is detected or an adjustment for a polishing parameter is determined based on sequence of adjusted thickness values.

2. 发明申请

WO2018057623A1 ENDPOINT DETECTION WITH COMPENSATION FOR FILTERING 审中-公开
标题翻译：带过滤补偿的终点检测
公开(公告)号：WO2018057623A1
公开(公告)日：2018-03-29
申请号：PCT/US2017/052514
申请日：2017-09-20
申请人： APPLIED MATERIALS, INC.
发明人： XU, Kun , LIN, Kevin , CARLSSON, Ingemar , SHEN, Shih-Haur , LIU, Tzu-Yu
IPC分类号： H01L21/304 , H01L21/306 , H01L21/67 , H01L21/66
摘要： A method of polishing includes polishing a layer of a substrate, monitoring the layer of the substrate with an in-situ monitoring system to generate signal that depends on a thickness of the layer, filtering the signal to generate a filtered signal, determining an adjusted threshold value from an original threshold value and a time delay value representative of time required for filtering the signal, and triggering a polishing endpoint when the filtered signal crosses the adjusted threshold value.
摘要翻译：抛光方法包括抛光衬底层，利用原位监测系统监测衬底层以产生取决于层厚度的信号，过滤信号以产生滤波后的信号，根据原始阈值和代表滤波信号所需时间的时间延迟值确定经调节的阈值，并且当经滤波的信号穿过调节后的阈值时触发抛光终点。

3. 发明申请

WO2012148826A2 HIGH SENSITIVITY EDDY CURRENT MONITORING SYSTEM 审中-公开
标题翻译：高灵敏度EDDY电流监测系统
公开(公告)号：WO2012148826A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/034590
申请日：2012-04-20
申请人： APPLIED MATERIALS, INC. , IRAVANI, Hassan, G. , XU, Kun , SWEDEK, Boguslaw, A. , CARLSSON, Ingemar , SHEN, Shih-Haur , TU, Wen-Chiang
发明人： IRAVANI, Hassan, G. , XU, Kun , SWEDEK, Boguslaw, A. , CARLSSON, Ingemar , SHEN, Shih-Haur , TU, Wen-Chiang
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： H01L22/14 , B24B49/105 , H01L22/26 , H01L2924/0002 , H01L2924/00
摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and controlling pressures applied by a carrier head to the substrate during polishing of the metal layer at the polishing station based on thickness measurements of the metal layer from the eddy current monitoring system to reduce differences between an expected thickness profile of the metal layer and a target profile, wherein the metal layer has a resistivity greater than 700 ohm Angstroms.
摘要翻译：一种基板的化学机械抛光方法包括：在抛光台处抛光基板上的金属层，在抛光台处用涡流监视系统监测在抛光过程中金属层的厚度，以及控制承载头施加到基于来自涡流监测系统的金属层的厚度测量在抛光站处抛光金属层的衬底，以减少金属层的预期厚度分布与目标轮廓之间的差异，其中金属层具有更大的电阻率超过700欧姆埃。

4. 发明申请

WO2015200101A1 INDUCTIVE MONITORING OF CONDUCTIVE TRENCH DEPTH 审中-公开
标题翻译：诱导性深层深度的诱导监测
公开(公告)号：WO2015200101A1
公开(公告)日：2015-12-30
申请号：PCT/US2015/036520
申请日：2015-06-18
申请人： APPLIED MATERIALS, INC.
发明人： LU, Wei , WANG, Zhefu , WANG, Zhihong , IRAVANI, Hassan G. , BENVEGNU, Dominic J. , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , TU, Wen-Chiang
IPC分类号： H01L21/304
CPC分类号： H01L22/26 , B24B37/013 , B24B37/04 , H01L21/3212 , H01L22/14
摘要： In fabrication of an integrated circuit having a layer with a plurality of conductive interconnects, a layer of a substrate is polished to provide the layer of the integrated circuit. The layer of the substrate includes conductive lines to provide the conductive interconnects. The layer of the substrate includes a closed conductive loop formed of a conductive material in a trench. A depth of the conductive material in the trench is monitored using an inductive monitoring system and a signal is generated. Monitoring includes generating a magnetic field that intermittently passes through the closed conductive loop. A sequence of values over time is extracted from the signal, the sequence of values representing the depth of the conductive material over time.
摘要翻译：在具有具有多个导电互连层的集成电路的制造中，抛光衬底层以提供集成电路的层。衬底的层包括提供导电互连的导线。衬底层包括在沟槽中由导电材料形成的闭合导电环路。使用感应监测系统监测沟槽中导电材料的深度，并产生信号。监测包括产生间歇地通过闭合导电回路的磁场。从信号中提取随时间变化的值序列，表示导电材料随着时间的深度的值序列。

5. 发明申请

WO2015123000A1 ADJUSTING EDDY CURRENT MEASUREMENTS 审中-公开
标题翻译：调整EDDY当前测量
公开(公告)号：WO2015123000A1
公开(公告)日：2015-08-20
申请号：PCT/US2015/012281
申请日：2015-01-21
申请人： APPLIED MATERIALS, INC.
发明人： XU, Kun , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , BENNETT, Doyle E. , SHEN, Shih-Haur , IRAVANI, Hassan G. , TU, Wen-Chiang , LIU, Tzu-Yu
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B49/105 , B24B37/013 , B24B49/02 , B24B49/04 , B24B49/14
摘要： Among other things, a method of controlling polishing during a polishing process is described. The method includes receiving a measurement of a thickness, thick (t), of a conductive layer of a substrate undergoing polishing from an in-situ monitoring system at a time t ; receiving a measured temperature, T (t), associated with the conductive layer at the time t ; calculating resistivity pT of the conductive layer at the measured temperature T (t); adjusting the measurement of the thickness using the calculated resistivity pT to generate an adjusted measured thickness; and detecting a polishing endpoint or an adjustment for a polishing parameter based on the adjusted measured thickness.
摘要翻译：其中，描述了在抛光过程中控制抛光的方法。该方法包括在时间t从原位监测系统接收经历抛光的基底的导电层的厚度（t）的测量; 在时间t接收与导电层相关的测量温度T（t）; 在测量温度T（t）下计算导电层的电阻率pT; 使用所计算的电阻率pT调节厚度的测量值以产生调整的测量厚度; 以及基于所调整的测量厚度检测抛光终点或抛光参数的调整。

6. 发明申请

WO2015066058A1 DETERMINATION OF GAIN FOR EDDY CURRENT SENSOR 审中-公开
标题翻译： EDDY电流传感器增益的确定
公开(公告)号：WO2015066058A1
公开(公告)日：2015-05-07
申请号：PCT/US2014/062699
申请日：2014-10-28
申请人： APPLIED MATERIALS, INC.
发明人： XU, Kun , SHEN, Shih-Haur , SWEDEK, Boguslaw A. , CARLSSON, Ingemar , BENNETT, Doyle E. , TU, Wen-Chiang , IRAVANI, Hassan G. , LIU, Tzu-Yu
IPC分类号： H01L21/304
CPC分类号： B24B49/105 , B24B37/005
摘要： In one aspect, a method of controlling polishing includes receiving a measurement of an initial thickness of a conductive film on a first substrate prior to polishing the first substrate from an in-line or stand-alone monitoring system, polishing one or more substrates in a polishing system, the one or more substrates including the first substrate, during polishing of the one or more substrates, monitoring the one or more substrates with an eddy current monitoring system to generate a first signal, determining a starting value of the first signal for a start of polishing of the first substrate, determining a gain based on the starting value and the measurement of the initial thickness, for at least a portion of the first signal collected during polishing of at least one substrate of the one or more substrates, and calculating a second signal based on the first signal and the gain.
摘要翻译：一方面，一种控制抛光的方法包括：在从第一基板或独立监控系统抛光第一基板之前，在第一基板上接收导电膜的初始厚度的测量，在一个或多个基板中抛光一个或多个基板抛光系统，所述一个或多个衬底包括第一衬底，在一个或多个衬底的抛光期间，用涡流监测系统监测一个或多个衬底以产生第一信号，确定第一信号的起始值开始抛光第一衬底，对于在一个或多个衬底的至少一个衬底的抛光期间收集的第一信号的至少一部分，基于起始值和初始厚度的测量来确定增益，并且计算基于第一信号和增益的第二信号。

7. 发明申请

WO2013130366A1 FEEDBACK CONTROL USING DETECTION OF CLEARANCE AND ADJUSTMENT FOR UNIFORM TOPOGRAPHY 审中-公开
标题翻译：反馈控制使用检测间隔和调整统一地形
公开(公告)号：WO2013130366A1
公开(公告)日：2013-09-06
申请号：PCT/US2013/027448
申请日：2013-02-22
申请人： APPLIED MATERIALS, INC.
发明人： XU, Kun , CARLSSON, Ingemar , LIU, Tzu-Yu , SHEN, Shih-Haur , SWEDEK, Boguslaw A. , TU, Wen-Chiang , KARUPPIAH, Lakshmanan
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： H01L22/26 , B24B37/005 , B24B37/04 , B24B49/12 , H01L22/12
摘要： A method of controlling polishing includes storing a desired ratio representing a ratio for a clearance time of a first zone of a substrate to a clearance time of a second zone of the substrate. During polishing of a first substrate, an overlying layer is monitored, a sequence of measurements is generated, and the measurements are sorted a first group associated with the first zone of the substrate and a second group associated with the second zone on the substrate. A first time and a second time at which the overlying layer is cleared is determined based on the measurements from the first group and the second group, respectively. At least one adjusted polishing pressure is calculated for the first zone based on a first pressure applied in the first zone during polishing the first substrate, the first time, the second time, and the desired ratio.
摘要翻译：控制抛光的方法包括将表示基材的第一区域的间隙时间的比率与基材的第二区域的间隙时间的期望比率进行存储。在第一衬底的抛光期间，监测上覆层，产生一系列测量，并且对与衬底的第一区域相关联的第一组和与衬底上的第二区域相关联的第二组对第一组进行测量。基于来自第一组和第二组的测量，分别确定覆盖层被清除的第一次和第二次。基于在抛光第一基板期间第一区域中施加的第一压力，第一时间，第二时间和期望比率，针对第一区域计算至少一个调整的抛光压力。

8. 发明申请

WO2012148862A2 EDDY CURRENT MONITORING OF METAL RESIDUE OR METAL PILLARS 审中-公开
标题翻译： EDDY电流监测金属残留或金属支柱
公开(公告)号：WO2012148862A2
公开(公告)日：2012-11-01
申请号：PCT/US2012/034712
申请日：2012-04-23
申请人： APPLIED MATERIALS, INC. , IRAVANI, Hassan G. , XU, Kun , SWEDEK, Boguslaw A. , CARLSSON, Ingemar , SHEN, Shih-Haur , TU, Wen-Chiang , GAGE, David Maxwell , WANG, James C.
发明人： IRAVANI, Hassan G. , XU, Kun , SWEDEK, Boguslaw A. , CARLSSON, Ingemar , SHEN, Shih-Haur , TU, Wen-Chiang , GAGE, David Maxwell , WANG, James C.
IPC分类号： H01L21/304 , H01L21/66
CPC分类号： B24B37/00 , B24B49/105
摘要： A method of chemical mechanical polishing a substrate includes polishing a metal layer on the substrate at a polishing station, monitoring thickness of the metal layer during polishing at the polishing station with an eddy current monitoring system, and halting polishing when the eddy current monitoring system indicates that residue of the metal layer is removed from an underlying layer and a top surface of the underlying layer is exposed.
摘要翻译：对基板进行化学机械抛光的方法包括：在抛光台处对基板上的金属层进行抛光，用涡流监视系统在抛光台上研磨抛光期间监测金属层的厚度，并且当涡流监视系统指示金属层的残留物从下层移除，底层的顶表面被暴露。

9. 发明申请

WO2011152935A2 CONTROL OF OVERPOLISHING OF MULTIPLE SUBSTRATES ON THE SAME PLATEN IN CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：化学机械抛光过程中多个基体在同一板上的过度控制
公开(公告)号：WO2011152935A2
公开(公告)日：2011-12-08
申请号：PCT/US2011/034210
申请日：2011-04-27
申请人： APPLIED MATERIALS, INC. , ZHANG, Jimin , CARLSSON, Ingemar , JEW, Stephen , SWEDEK, Boguslaw A.
发明人： ZHANG, Jimin , CARLSSON, Ingemar , JEW, Stephen , SWEDEK, Boguslaw A.
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/12
摘要： A polishing method includes simultaneously polishing two substrates, a first substrate and a second substrate, on the same polishing pad. A default overpolishing time is stored and an in-situ monitoring system monitors the two substrates. The in-situ monitoring system further determines a first polishing endpoint time and a second polishing endpoint time of the first and second substrates, respectively. The polishing method further includes calculating an overpolishing stop time where the overpolishing stop time is between the first polishing endpoint time plus the default overpolishing time and the second polishing endpoint time plus the default overpolishing time. Polishing of the first substrate is continued past the first polishing endpoint time and polishing of the second substrate is continued past the second polishing endpoint time. Polishing of both the first substrate and the second substrate is halted simultaneously at the overpolishing stop time.
摘要翻译：抛光方法包括在同一抛光垫上同时抛光两个基板，第一基板和第二基板。存储默认的过度抛光时间，并且现场监控系统监控两个基板。原位监测系统还分别确定第一和第二基底的第一抛光终点时间和第二抛光终点时间。抛光方法还包括计算过度抛光停止时间，其中抛光停止时间在第一抛光终点时间加上默认过度抛光时间与第二抛光终点时间加上默认过度抛光时间之间。第一衬底的抛光继续经过第一抛光终点时间，并且第二衬底的抛光继续经过第二抛光终点时间。在抛光停止时间同时停止第一基板和第二基板的抛光。

10. 发明申请

WO2010053804A2 ENDPOINT CONTROL OF MULTIPLE-WAFER CHEMICAL MECHANICAL POLISHING 审中-公开
标题翻译：多晶化学机械抛光的终点控制
公开(公告)号：WO2010053804A2
公开(公告)日：2010-05-14
申请号：PCT/US2009/062433
申请日：2009-10-28
申请人： APPLIED MATERIALS, INC. , ZHANG, Jimin , OSTERHELD, Thomas H. , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , JEW, Stephen
发明人： ZHANG, Jimin , OSTERHELD, Thomas H. , CARLSSON, Ingemar , SWEDEK, Boguslaw A. , JEW, Stephen
IPC分类号： H01L21/304
CPC分类号： B24B37/013 , B24B49/04
摘要： A computer-implemented method includes polishing substrates simultaneously in a polishing apparatus. Each substrate has a polishing rate independently controllable by an independently variable polishing parameter. Measurement data that varies with the thickness of each of the substrates is acquired from each of the substrates during polishing with an in-situ monitoring system. A projected thickness that each substrate will have at a target time is determined based on the measurement data. The polishing parameter for at least one substrate is adjusted to adjust the polishing rate of the at least one substrate such that the substrates have closer to the same thickness at the target time than without the adjustment.
摘要翻译：计算机实现的方法包括在抛光设备中同时抛光基板。每个基板具有可通过独立变化的抛光参数独立控制的抛光速率。利用原位监测系统在抛光期间从每个基板获取随每个基板的厚度而变化的测量数据。根据测量数据确定每个衬底在目标时间具有的投影厚度。调节至少一个基板的抛光参数以调节至少一个基板的抛光速率，使得基板在目标时间具有比未经调节更接近相同的厚度。

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