会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • METHOD FOR COMPRESSING PROTOCOLS AND RELATED SYSTEM
    • 压缩协议和相关系统的方法
    • WO2003007572A1
    • 2003-01-23
    • PCT/EP2002/007876
    • 2002-07-15
    • ROKE MANOR RESEARCH LIMITEDPRICE, Richard
    • PRICE, Richard
    • H04L29/06
    • H04L65/607G06T9/005H04L65/608H04L69/04
    • In a communications system where different protocols are sent from a transmitting terminal to a receiving terminal, a method of transmitting specific protocol fields information, known as protocol fields, comprising: pre-storing information/instructions regarding said protocol fields at the receiving terminal. A compressor compresses variable data in said fields. The transmitting terminal sends compressed data only relating to variable data within a specific protocol field; and from this the receiving terminal interprets the specific protocol field by decompressing the received data. The invention has particular application to where the protocol fields is in Backus Naur from.
    • 在从发送终端向接收终端发送不同协议的通信系统中,发送被称为协议字段的特定协议字段信息的方法,包括:在接收终端预先存储关于所述协议字段的信息/指令。 压缩器压缩所述字段中的可变数据。 发送终端仅在特定协议字段内发送与变量数据有关的压缩数据; 并且由此,接收终端通过对接收到的数据进行解压缩来解释特定协议字段。 本发明特别适用于协议领域在Backus Naur中的地方。
    • 9. 发明申请
    • TRANSISTOR AND ITS METHOD OF MANUFACTURE
    • 晶体管及其制造方法
    • WO2013001282A2
    • 2013-01-03
    • PCT/GB2012/051465
    • 2012-06-22
    • PRAGMATIC PRINTING LTDPRICE, RichardWHITE, Scott
    • PRICE, RichardWHITE, Scott
    • H01L29/66H01L27/12
    • H01L27/088G03F7/0002H01L21/0272H01L21/28008H01L21/283H01L21/31144H01L21/76895H01L21/823437H01L21/823475H01L23/528H01L27/11803H01L27/1214H01L27/1225H01L27/1288H01L27/1292H01L29/66757H01L29/66969H01L29/78666H01L29/78675H01L29/7869H01L51/0541
    • A method of manufacturing a transistor comprising: providing a substrate, a region of semiconductive material supported by the substrate, and a region of electrically conductive material supported by the region of semiconductive material;forming at least one layer of resist material over said regions to form a covering of resist material over said regions; forming a depression in a surface of the covering of resist material, said depression extending over a first portion of said region of conductive material, said first portion separating a second portion of the conductive region from a third portion of the conductive region;removing resist material located under said depression so as to form a window, through said covering, exposing said first portion of the electrically conductive region;removing said first portion to expose a connecting portion of the region of semiconductive material, said connecting portion connecting the second portion to the third portion of the conductive region;forming a layer of dielectric material over the exposed portion of the region of semiconductive material; and depositing electrically conductive material to form a layer of electrically conductive material over said layer of dielectric material, the layer of dielectric material electrically isolating the layer of electrically conductive material from the second and third portions of the conductive region.
    • 一种制造晶体管的方法,包括:提供衬底,由所述衬底支撑的半导体材料区域以及由所述半导体材料区域支撑的导电材料区域;形成至少一个层 在所述区域上形成抗蚀剂材料以在所述区域上形成抗蚀剂材料的覆盖物; 在所述抗蚀剂材料覆盖物的表面中形成凹陷,所述凹陷在所述导电材料区域的第一部分上延伸,所述第一部分将所述导电区域的第二部分与所述导电区域的第三部分分开;去除抗蚀剂材料 位于所述凹陷下方以形成窗口,穿过所述覆盖物,暴露所述导电区域的所述第一部分;移除所述第一部分以暴露所述半导体材料区域的连接部分,所述连接部分将所述第二部分连接到 所述导电区域的第三部分;在所述半导电材料区域的暴露部分上形成介电材料层; 以及沉积导电材料以在所述介电材料层上形成导电材料层,所述介电材料层将所述导电材料层与所述导电区域的第二和第三部分电隔离。
    • 10. 发明申请
    • ELECTRONIC DEVICE AND ITS METHOD OF MANUFACTURE
    • 电子器件及其制造方法
    • WO2012131395A1
    • 2012-10-04
    • PCT/GB2012/050727
    • 2012-03-30
    • PRAGMATIC PRINTING LTDPRICE, RichardRAMSDALE, Catherine
    • PRICE, RichardRAMSDALE, Catherine
    • H01L29/786H01L29/66
    • H01L21/268H01L21/428H01L29/6675H01L29/66757H01L29/66772H01L29/66969H01L29/78618H01L29/7869H01L29/78696H01L51/0027H01L51/105
    • A method of manufacturing an electronic device comprises: providing a layer of semiconductor material comprising a first portion, a second portion, and a third portion, the third portion connecting the first portion to the second portion and providing a semiconductive channel for electrical current flow between the first and second portions; providing a gate terminal arranged with respect to said third portion such that a voltage may be applied to the gate terminal to control an electrical conductivity of said channel; and processing at least one of the first and second portions so as to have an electrical conductivity greater than an electrical conductivity of the channel when no voltage is applied to the gate terminal. In certain embodiments, the processing comprises exposing at least one of the first and second portions to electromagnetic radiation. The first and second portions may be laser annealed to increase their conductivities.
    • 一种制造电子设备的方法包括:提供包括第一部分,第二部分和第三部分的半导体材料层,所述第三部分将第一部分连接到第二部分,并且提供半导体通道,用于在 第一和第二部分; 提供相对于所述第三部分布置的栅极端子,使得可以向栅极端子施加电压以控制所述沟道的导电性; 以及当没有电压施加到所述栅极端子时,处理所述第一部分和所述第二部分中的至少一个,使得具有大于所述沟道的电导率的导电性。 在某些实施例中,处理包括将第一和第二部分中的至少一个暴露于电磁辐射。 第一和第二部分可以被激光退火以增加它们的电导率。