专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

3. 发明申请

WO2009155272A4 CROSS-SECTION SYSTEMS AND METHODS 审中-公开
标题翻译：交叉系统和方法
公开(公告)号：WO2009155272A4
公开(公告)日：2010-05-14
申请号：PCT/US2009047474
申请日：2009-06-16
申请人： CARL ZEISS SMT INC , SCIPIONI LAWRENCE , KNIPPELMEYER RAINER , RIEDESEL CHRISTOPH , MORGAN JOHN , MANTZ ULRICH , WAGEMANN ULRICH
发明人： SCIPIONI LAWRENCE , KNIPPELMEYER RAINER , RIEDESEL CHRISTOPH , MORGAN JOHN , MANTZ ULRICH , WAGEMANN ULRICH
IPC分类号： H01J37/30
CPC分类号： G01N1/286 , H01J2237/0807 , H01J2237/304 , H01J2237/31745 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.
摘要翻译：第一仪器（230）用于对具有限定横截面的沟槽（110）的第一半导体产品成像，而第二器械（220）用于同时制备具有限定横截面的沟槽的第二半导体产品。此外，公开了一种通过粗铣和随后的精细铣削在半导体制品中制备具有限定横截面的沟槽（110）的方法。

4. 发明申请

WO2017076702A3 METHOD AND DEVICE FOR CHARACTERIZING A WAFER PATTERNED USING AT LEAST ONE LITHOGRAPHY STEP 审中-公开
标题翻译：用于表征通过至少一个光刻步骤构造的水的方法和装置
公开(公告)号：WO2017076702A3
公开(公告)日：2017-06-29
申请号：PCT/EP2016075701
申请日：2016-10-25
申请人： ZEISS CARL SMT GMBH , STIEPAN HANS-MICHAEL , ZOTT ANDY , MANTZ ULRICH
发明人： STIEPAN HANS-MICHAEL , ZOTT ANDY , MANTZ ULRICH
IPC分类号： G03F7/20 , G01N21/47 , G01N21/95
CPC分类号： G03F7/70625 , G01B2210/56 , G03F7/70633
摘要： The invention relates to a method and a device for characterizing a wafer patterned using at least one lithography step. According to one aspect, a plurality of parameters characterizing the patterned wafer are determined on the basis of measurements of the intensity of electromagnetic radiation after the diffraction of said radiation on the patterned wafer, said intensity measurements being carried out for at least one useful pattern and at least one auxiliary pattern and the parameters being determined by means of a mathematical optimization method on the basis of intensity values measured during the intensity measurements for respective different combinations of wavelength, polarization, and/or order of diffraction and also according to calculated intensity values. The determination of the parameters characterizing the patterned wafer has the following steps: determining a first set of parameters on the basis of the intensity values obtained for the at least one auxiliary structure; and determining the parameters of a second set of parameters, taking into account the parameters determined for the first set of parameters.
摘要翻译：本发明涉及用于表征由至少一个光刻步骤构成的晶片的方法和装置。在一个方面，多个是从根据该图案化晶片上的衍射电磁辐射的强度的测量的基础上图案化的晶片参数的特性来确定，这些强度测量为至少一种有用的结构和至少一个辅助结构，其中，所述参数的确定基于由在针对波长，偏振和/或衍射阶次的各自不同组合的强度测量的情况下，使用数学优化方法测量强度值和相应计算的强度值。图案化的晶片参数的特性的确定包括以下步骤：确定第一组的基于用于所述至少一个辅助结构获得的强度值的参数的参数，以及确定第二组参数的参数，考虑到第一个参数集的所确定的参数。

5. 发明申请

WO2009155272A3 CROSS-SECTION SYSTEMS AND METHODS 审中-公开
标题翻译：交叉部分系统和方法
公开(公告)号：WO2009155272A3
公开(公告)日：2010-03-18
申请号：PCT/US2009047474
申请日：2009-06-16
申请人： CARL ZEISS SMT INC , SCIPIONI LAWRENCE , KNIPPELMEYER RAINER , RIEDESEL CHRISTOPH , MORGAN JOHN , MANTZ ULRICH , WAGEMANN ULRICH
发明人： SCIPIONI LAWRENCE , KNIPPELMEYER RAINER , RIEDESEL CHRISTOPH , MORGAN JOHN , MANTZ ULRICH , WAGEMANN ULRICH
IPC分类号： H01J37/30
CPC分类号： G01N1/286 , H01J2237/0807 , H01J2237/304 , H01J2237/31745 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A first instrument (230) is used to image a first semiconductor article having a trench (110) of defined cross-section, while a second instrument (220) is used to simultaneously prepare a second semiconductor article with a trench of defined cross-section. Furthermore, a method is disclosed to prepare a trench (110) of defined cross-section in a semiconductor article by rough milling and subsequent fine milling.
摘要翻译：使用第一器具（230）来成像具有限定的横截面的沟槽（110）的第一半导体制品，同时使用第二器械（220）来同时制备具有限定的横截面的沟槽的第二半导体制品。此外，公开了一种通过粗铣和随后的精铣在半导体制品中制备具有限定的横截面的沟槽（110）的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式