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1. 发明申请

WO2005027195A3 APPARATUS FOR CARRYING RETICLES AND METHOD OF USING THE SAME TO PROCESS RETICLES 审中-公开
标题翻译：携带反应物的装置及其使用方法
公开(公告)号：WO2005027195A3
公开(公告)日：2006-06-29
申请号：PCT/US2004028447
申请日：2004-09-01
申请人： AKRION LLC , KASHKOUSH ISMAIL , RUIZ CARLOS M
发明人： KASHKOUSH ISMAIL , RUIZ CARLOS M
IPC分类号： F16M11/00 , B05C11/00 , B05C13/00 , H01L20060101 , H01L21/673
CPC分类号： H01L21/67316
摘要： An apparatus (100) for carrying reticles during a multi-step, multi-location treatment process comprising a structural frame (10) carrying at least three holding rods (20, 23), the rods (20, 23) and/or frame (10) being constructed of a hard inner core material and a chemically resistant outer material is disclosed. The apparatus (100), in one embodiment, further comprises a plurality of slots for supporting the reticles that minimize the contact area between the reticles and the apparatus. Suitable hard inner core materials include carbon fiber, quartz, ceramic, PEEK, and silicon carbide. Suitable outer material includes fluoropolymers, such PTFE, PFA, TFM, and ECTFE. The apparatus is preferably adapted to withstand a reticle treatment process temperature between 20 - 180 °C. The rods (20-23) and frame (10) are preferably designed to minimize shadowing effects of reticles supported in the apparatus being exposed to megasonic energy. In another aspect, the invention is a method of processing reticles using the inventive apparatus.
摘要翻译：一种用于在多步多位置处理过程中承载掩模版的设备（100），包括承载至少三个保持杆（20,23）的结构框架（10），所述杆（20,23）和/或框架 10）由硬的内芯材料和耐化学腐蚀的外部材料构成。在一个实施例中，装置（100）还包括多个槽，用于支撑使掩模版和装置之间的接触面积最小化的光罩。合适的硬内芯材料包括碳纤维，石英，陶瓷，PEEK和碳化硅。合适的外部材料包括含氟聚合物，例如PTFE，PFA，TFM和ECTFE。该装置优选适于承受20-180℃之间的掩模版处理工艺温度。杆（20-23）和框架（10）优选地设计成最小化被暴露于兆声波能量的装置中支撑的标线的遮蔽效应。在另一方面，本发明是使用本发明的装置处理标线的方法。

2. 发明申请

WO2006017108A3 SYSTEM AND METHOD FOR PRE-GATE CLEANING OF SUBSTRATES 审中-公开
标题翻译：用于基板预清洁的系统和方法
公开(公告)号：WO2006017108A3
公开(公告)日：2009-06-04
申请号：PCT/US2005024030
申请日：2005-07-07
申请人： AKRION LLC , LIU ZHI LEWIS , KASHKOUSH ISMAIL , NOVAK RICHARD , WALTER ALAN
发明人： LIU ZHI LEWIS , KASHKOUSH ISMAIL , NOVAK RICHARD , WALTER ALAN
IPC分类号： B08B7/00 , B08B3/00 , B08B3/08 , B08B3/10 , B08B3/12 , B08B7/04
CPC分类号： H01L21/02052 , B08B3/08 , C11D3/042 , C11D11/0047 , H01L21/28167 , H01L21/28238 , H01L21/67051
摘要： A system and method for cleaning semiconductor wafers wherein the use of SCI and SC2 is eliminated and replaced by the use DIO3 and dilute chemistries. In one aspect, the invention is a method comprising: (a) supporting in a process chamber at least one semiconductor wafer having a silicon foundation with a silicon-dioxide layer in at least one pre-gate structure; (b) applying an aqueous solution of hydrofluoric acid in deionized (DI) water to the semiconductor wafer to remove the silicon dioxide layer and form a gate; (c) applying ozonated deionized water (DIO3) to the semiconductor wafer to remove particles from the gate and passivate the silicon foundation; (d) applying a dilute solution of hydrofluoric acid and hydrochloric acid in DI water to the semiconductor wafer to remove any silicon dioxide layer that may have formed in the gate from the application of the DIO3 and to remove any metal contaminants; and (e) applying DIO3 to the semiconductor wafer to grow a new layer of silicon dioxide on the silicon foundation in the gate.
摘要翻译：一种用于清洁半导体晶片的系统和方法，其中消除了使用SCI和SC2并用DIO3和稀释化学物质代替。一方面，本发明是一种方法，其包括：（a）在处理室中至少一个半导体晶片支撑，所述至少一个半导体晶片具有至少一个预栅极结构中的具有二氧化硅层的硅基底; （b）将氢氟酸的水溶液在去离子（DI）水中加入到半导体晶片中以除去二氧化硅层并形成栅极; （c）将臭氧化去离子水（DIO3）施加到半导体晶片以从栅极去除颗粒并钝化硅基底; （d）将氢氟酸和盐酸的稀释溶液在去离子水中加到半导体晶片上以去除可能从DIO3的应用中形成的二氧化硅层并除去任何金属污染物; 和（e）将DIO3施加到半导体晶片以在栅极的硅基底上生长新的二氧化硅层。

3. 发明申请

WO2005013002A3 PROCESS SEQUENCE FOR PHOTORESIST STRIPPING AND/OR CLEANING OF PHOTOMASKS FOR INTEGRATED CIRCUIT MANUFACTURING 审中-公开
标题翻译：用于集成电路制造的光电子剥离和/或清洁的过程序列
公开(公告)号：WO2005013002A3
公开(公告)日：2005-06-23
申请号：PCT/US2004024793
申请日：2004-08-02
申请人： AKRION LLC , KASHKOUSH ISMAIL , NOVAK RICHARD , CHEN GIM-SYANG
发明人： KASHKOUSH ISMAIL , NOVAK RICHARD , CHEN GIM-SYANG
IPC分类号： B08B3/12 , B08B7/00 , B08B7/02 , C23F1/00 , G03F20060101 , G03F7/42 , H01L21/306
CPC分类号： G03F7/423 , G03F7/428
摘要： A method and system for cleaning and/or stripping photoresist from photomasks used in integrated circuit manufacturing comprising a process and means of introducing a mixture of sulfuric acid and ozone (or a mixture of sulfuric acid and hydrogen peroxide) to the surface of a photomask while applying megasonic energy. The invention also comprises method and system comprising a process and means of introducing ozonated deionized water and/or a low temperature dilute aqueous solution (dAPM) to the surface of photomasks while applying megasonic energy. The process and apparatus also remove post plasma ashed residues and other contaminants from photomask surfaces.
摘要翻译：一种用于在用于集成电路制造的光掩模中清洁和/或剥离光致抗蚀剂的方法和系统，包括将硫酸和臭氧（或硫酸和过氧化氢的混合物）的混合物引入光掩模的表面的方法和装置，同时应用兆声波能量。本发明还包括方法和系统，其包括将臭氧化去离子水和/或低温稀释水溶液（dAPM）引入光掩模表面同时施加兆声波能量的方法和装置。该方法和设备还从光掩模表面除去后等离子体灰浆残留物和其它污染物。

4. 发明申请

WO2007084952A2 SYSTEMS AND METHODS FOR DRYING A ROTATING SUBSTRATE 审中-公开
标题翻译：用于干燥旋转基板的系统和方法
公开(公告)号：WO2007084952A2
公开(公告)日：2007-07-26
申请号：PCT/US2007060709
申请日：2007-01-18
申请人： AKRION TECHNOLOGIES INC , LIU ZHI LEWIS , KASHKOUSH ISMAIL , LEE HANJOO
发明人： LIU ZHI LEWIS , KASHKOUSH ISMAIL , LEE HANJOO
IPC分类号： D06F58/04
CPC分类号： H01L21/67034 , C11D11/0041 , C11D11/0047 , C11D11/0064 , H01L21/67028 , H01L21/67051 , Y10T428/24802 , Y10T428/28
摘要： A method of drying a surface of a substrate is provided. The method includes supporting and rotating a substrate; applying a liquid to the substrate surface at or near a rotational center point via a liquid dispenser (so that a film of the liquid is formed on the surface); applying a drying fluid to she substrate surface at a predetermined distance from the rotational center point via one or more drying fluid dispensers; and manipulating the drying fluid dispenser(s) so that the location at which the drying fluid is applied to the substrate is moved in a direction toward the rotational center point, while at the same time manipulating the liquid dispenser so that the location at which the liquid is applied to the substrate is moved in a direction outward from the rotational center point. The liquid dispenser and drying fluid dispensers) noted above can be located on and/or within an assembly. The assembly can include a first dispenser, a second dispenser, and a third dispenser. The first dispenser supplies liquid while the second and third dispensers supply drying fluid, where the second dispenser has a larger opening than the third dispenser. The second and third dispensers are positioned on the assembly next to one another and spaced from the first dispenser. Further, the second dispenser is located between the third dispenser and the first dispenser, such that the first dispenser is capable of linearly leading the second and third dispensers during movement.
摘要翻译：提供了干燥基板表面的方法。该方法包括支撑和旋转衬底; 通过液体分配器将液体施加到旋转中心点处或附近的基底表面（从而在表面上形成液体膜）; 经由一个或多个干燥流体分配器将干燥流体施加到距旋转中心点预定距离的基底表面; 并且操作干燥流体分配器，使得干燥流体施加到基底的位置沿着朝向旋转中心点的方向移动，同时操纵液体分配器，使得在该位置处液体被施加到基板，从旋转中心点向外的方向移动。上述液体分配器和干燥液分配器可以位于组件内和/或组件内。组件可以包括第一分配器，第二分配器和第三分配器。第一分配器供应液体，而第二和第三分配器供应干燥流体，其中第二分配器具有比第三分配器更大的开口。第二和第三分配器彼此相邻定位在组件上并且与第一分配器间隔开。此外，第二分配器位于第三分配器和第一分配器之间，使得第一分配器能够在移动期间线性地引导第二和第三分配器。

5. 发明申请

WO2007140409A9 APPARATUS AND METHOD FOR PROCESSING A HYDROPHOBIC SURFACE OF A SUBSTRATE 审中-公开
标题翻译：用于处理基质疏水表面的装置和方法
公开(公告)号：WO2007140409A9
公开(公告)日：2008-03-06
申请号：PCT/US2007069983
申请日：2007-05-30
申请人： AKRION TECHNOLOGIES INC , KASHKOUSH ISMAIL , CHEN GIM-SYANG
发明人： KASHKOUSH ISMAIL , CHEN GIM-SYANG
IPC分类号： B08B3/04 , B08B11/02 , B08B15/02
CPC分类号： B05D1/002 , B05D3/0466 , B05D5/083 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： A method of processing a substrate comprising a.) supporting a substrate having a hydrophilic surface in a substantially horizontal orientation, b) rotating the substrate, c) applying & film of an aqueous solution of HF to the hydrophilic surface of the substrate for a period of time sufficient to convert the hydrophilic surface into a hydrophobic surface, wherein the concentration of MF is between about 0.1 % to about 0.5 % by weight of HF in water and the period of time is between about 100 and about 300 seconds, d} applying DI water to the hydrophobic surface of the substrate, and e) applying a drying fluid to the hydrophobic surface of the substrate so as to substantially dry the hydrophobic surface. The invention also is an apparatus for processing a substrate comprising a chamber having at least one wall, a rotary support member located within the chamber for supporting the substrate in a substantially horizontal position and adapted to rotate the substrate, and a first exhaust exit located within the at least one wall, wherein the first exhaust exit is tangential to a rotational direction of the substrate.
摘要翻译：一种处理基材的方法，包括a。）支撑具有基本上水平取向的亲水表面的基材，b）旋转基材，c）将HF水溶液涂覆到基材的亲水表面上一段时间的时间足以将亲水性表面转化为疏水性表面，其中MF在水中的浓度为HF重量的约0.1％至约0.5％，并且时间为约100至约300秒，d）施加去离子水到基底的疏水表面，以及e）将干燥流体施加到基底的疏水表面以基本干燥疏水表面。本发明还是一种用于处理衬底的设备，该设备包括具有至少一个壁的腔室，位于腔室内的旋转支撑部件，用于将衬底支撑在基本水平的位置并适于旋转衬底，以及位于腔室内的第一排气出口所述至少一个壁，其中所述第一排气出口与所述衬底的旋转方向相切。

6. 发明申请

WO2006031991A3 SYSTEM AND METHOD OF POWERING A SONIC ENERGY SOURCE AND USE OF THE SAME TO PROCESS SUBSTRATES 审中-公开
标题翻译：提供SONIC能量源的系统和方法及其使用方法来处理基板
公开(公告)号：WO2006031991A3
公开(公告)日：2007-10-04
申请号：PCT/US2005033023
申请日：2005-09-15
申请人： AKRION INC , KORBLER JOHN , KASHKOUSH ISMAIL , VOLKERT JOHN , PETERS MICHAEL
发明人： KORBLER JOHN , KASHKOUSH ISMAIL , VOLKERT JOHN , PETERS MICHAEL
IPC分类号： B08B3/12 , B08B7/04
CPC分类号： H01L21/67051 , B08B3/12
摘要： A system and method of supplying power to a sonic energy source that minimizes damage to substrate devices during processing while increasing processing efficiency and/or effectiveness. The system and method utilize the concept of ramping the amplitude and/or varying the frequency of the electrical signal used to drive the sonic energy source, thereby resulting in corresponding ramping and/or variations in the amplitude and frequency of the resulting sonic energy being applied to the substrate. A method of processing a substrate with sonic energy comprising: a) supporting at least one substrate in a process chamber; b) generating a base electrical signal; c) transmitting the base electrical signal to an amplifier, the amplifier converting the base electrical signal into an output electrical signal having a peak amplitude; d) transmitting the output electrical signal to a transducer, the transducer converting the output electrical signal into corresponding sonic energy; e) applying the sonic energy to the at least on substrate supported in the process chamber; and f) ramping the peak amplitude of the output electrical signal.
摘要翻译：一种向声能量源供电的系统和方法，其在处理过程中使衬底装置的损害最小化，同时提高处理效率和/或有效性。该系统和方法利用斜率振幅和/或改变用于驱动声能量的电信号的频率的概念，从而导致所应用的声能的振幅和频率的相应斜坡和/或变化到基底。一种用声能处理衬底的方法，包括：a）在处理室中支撑至少一个衬底; b）产生基本电信号; c）将基本电信号发送到放大器，放大器将基本电信号转换成具有峰值振幅的输出电信号; d）将输出电信号传输到换能器，换能器将输出电信号转换成相应的声能; e）将声能施加到所述处理室中支撑的所述至少一个衬底上; 以及f）斜率输出电信号的峰值幅度。

7. 发明申请

WO2006138438A3 SYSTEM AND METHOD OF PROCESSING SUBSTRATES USING SONIC ENERGY HAVING CAVITATION CONTROL 审中-公开
标题翻译：使用具有加密控制的SONIC能量处理基板的系统和方法
公开(公告)号：WO2006138438A3
公开(公告)日：2009-05-07
申请号：PCT/US2006023270
申请日：2006-06-15
申请人： AKRION INC , KASHKOUSH ISMAIL
发明人： KASHKOUSH ISMAIL
IPC分类号： B08B3/12 , B08B6/00 , C25F3/30
CPC分类号： H01L21/67051 , B08B3/12 , H01L21/02052
摘要： A system and method for the acoustic-assisted processing of a substrate, such as a semiconductor wafer, that reduces and/or eliminates damage. The invention suppresses cavitation and pressure effects within the cleaning liquid that may damage devices on the wafer by maintaining the liquid under a constant positive pressure. In one aspect, the invention is a method of processing a substrate comprising: a) supporting a substrate; b) applying a film of liquid to at least one surface of the substrate; c) positioning a transmitter so that at least a portion of the transmitter is in contact with the film of liquid, the transmitter operably coupled to a transducer; d) generating acoustical energy with the transducer; and e) transmitting the acoustical energy to the film of liquid via the transmitter so that the liquid is under only positive pressure during application of the acoustical energy.
摘要翻译：用于对诸如半导体晶片的基板进行声学辅助处理的系统和方法，其减少和/或消除损坏。本发明通过将液体保持恒定的正压力来抑制清洁液体内的气蚀和压力作用，从而可能损坏晶片上的装置。一方面，本发明是一种处理衬底的方法，包括：a）支撑衬底; b）将液体膜施加到所述基底的至少一个表面; c）定位发射器，使得所述发射器的至少一部分与所述液体膜接触，所述发射器可操作地耦合到换能器; d）用传感器产生声能; 以及e）通过发射器将声能传递到液体膜，使得液体在施加声能期间仅处于正压力。

8. 发明申请

WO2007140409A2 APPARATUS AND METHOD FOR PROCESSING A HYDROPHOBIC SURFACE OF A SUBSTRATE 审中-公开
标题翻译：用于处理基板的疏水表面的装置和方法
公开(公告)号：WO2007140409A2
公开(公告)日：2007-12-06
申请号：PCT/US2007069983
申请日：2007-05-30
申请人： AKRION TECHNOLOGIES INC , KASHKOUSH ISMAIL , CHEN GIM-SYANG
发明人： KASHKOUSH ISMAIL , CHEN GIM-SYANG
IPC分类号： B05D3/02
CPC分类号： B05D1/002 , B05D3/0466 , B05D5/083 , H01L21/02052 , H01L21/67028 , H01L21/67034 , H01L21/67051
摘要： A method of processing a substrate comprising a.) supporting a substrate having a hydrophil ic surface in a substantially horizontal orientation, b) rotating the substrate, c) applying & film of an aqueous solution of HF to the hydrophilic surface of the substrate for a period of time sufficient to convert the hydrophilic surface into a hydrophobic surface, wherem the concentration of MF is between about 0.1 % to about 0.5 % by weight of HF in water and the period o( time ss between about 100 and about 300 seconds, d} applying DI water to the hydrophobic surface of the substrate, aod e) applying a drying fksid to the hydrophobic surface of the substrate so as to .substantially dry the hydrophobic- surface. The invention nhË is an apparatus for processing a substrate comprising a chamber having aÊ least one wall, a rotary support member located within the charabei for supporting the substrate m a substantially hopzßfttsÊ position and adapted to rotate the substrate, and a first exhaust cxU located within the at least one wail, wherein the first exhaust exit is tangential to a rotational direction of the substrate.
摘要翻译：一种处理衬底的方法，包括a）支撑具有基本水平取向的亲水表面的衬底，b）旋转衬底，c）将HF水溶液施加和膜到衬底的亲水表面，用于足以将亲水表面转化为疏水表面的时间段，其中MF的浓度在水中的HF的约0.1重量％至约0.5重量％之间，以及周期o（约100至约300秒的时间ss，d }将DI水应用于基材的疏水表面，a）e）将干燥fksid施加到基材的疏水表面，从而基本干燥疏水表面。本发明是一种用于处理基材的设备，其包括具有至少一个壁的室，位于所述炭黑内的用于支撑基板的旋转支撑构件，其基本上跳跃位置并适于旋转所述基板;以及第一排气cxU，至少一个壁挂，其中所述第一排气出口与所述基板的旋转方向相切。

9. 发明申请

WO2006096814A3 METHOD AND SYSTEM FOR PROCESSING SUBSTRATES WITH SONIC ENERGY THAT REDUCES OR ELIMINATES DAMAGE TO SEMICONDUCTOR DEVICES 审中-公开
标题翻译：使用能够减少或消除对半导体器件造成损害的SONIC能量处理衬底的方法和系统
公开(公告)号：WO2006096814A3
公开(公告)日：2007-01-25
申请号：PCT/US2006008452
申请日：2006-03-08
申请人： AKRION INC , KASHKOUSH ISMAIL , PEJMAN FANI , KORBLER JOHN , VIVEK VOHRA , WALTER ALAN
发明人： KASHKOUSH ISMAIL , PEJMAN FANI , KORBLER JOHN , VIVEK VOHRA , WALTER ALAN
IPC分类号： B08B3/12 , B08B3/00 , B08B6/00 , B08B7/00 , B08B7/02 , C03C23/00 , C23G1/00 , C25F1/00 , C25F3/30 , C25F5/00
CPC分类号： B08B3/12 , H01L21/67051
摘要： A system and method for processing and/or cleaning substrates using sonic energy that eliminates or reduces damage to the substrates. In one aspect, the invention utilizes and produces low power density sonic energy to effectively remove particles from a substrate. Fig. 1 is a cleaning system (100) comprising a controller (1), an amplifier (8), a transducer (10), a transmitter (11), a process chamber (14), a support (15), a nozzle (16). Once the substrate (13) is supported and being rotated within the process chamber (14), a cleaning fluid is supplied to the top surface of the substrate via nozzle (16) so that a layer/meniscus (12) of fluid is foemed on the top surface of the substrate. Sonic energy is created by the transducer (11), sonic energy is transmitted by the elongate prode transmitter (11) to the layer 12. The sonic energy loosens particles on the top surface of the substrate, which are then carried away.
摘要翻译：使用消除或减少对基底的损伤的声能处理和/或清洁基底的系统和方法。一方面，本发明利用并产生低功率密度的声能以有效地从基底去除颗粒。图。 1是包括控制器（1），放大器（8），换能器（10），发射器（11），处理室（14），支撑件（15），喷嘴（16））。一旦基板（13）被支撑并且在处理室（14）内旋转，则通过喷嘴（16）将清洁流体供应到基板的顶表面，使得流体的层/半月板（12）被衬底的顶表面。声能由传感器（11）产生，声能由细长导体发射器（11）传输到层12.声能减弱衬底顶表面上的颗粒，然后将其带走。

10. 发明申请

WO2006028983A2 MEGASONIC PROCESSING SYSTEM WITH GASIFIED FLUID 审中-公开
标题翻译：具有气化流体的微粒加工系统
公开(公告)号：WO2006028983A2
公开(公告)日：2006-03-16
申请号：PCT/US2005031349
申请日：2005-09-01
申请人： GOLDFINGER TECHNOLOGIES LLC , NICOLOSI TOM , WU YI , KASHKOUSH ISMAIL
发明人： NICOLOSI TOM , WU YI , KASHKOUSH ISMAIL
IPC分类号： B08B3/12 , H01L21/00
CPC分类号： H01L21/67051 , B08B3/12 , B08B2203/005 , G03F7/42 , G03F7/425 , G03F7/428 , H01L21/02052
摘要： An apparatus and method for substrate processing, specifically including cleaning and/or photoresist stripping, in non-immersion type megasonic processing tools. In one embodiment, the invention utilizes the concept of dissolving a gas into a liquid at or near the point of use with a gasifier, such as a membrane contactor, during the processing of the substrate, thus eliminating the need for pre-made liquid/gas processing mixtures that are typically stored in auxiliary tanks. In one aspect, the invention is an apparatus comprising: a process chamber having a support for supporting a substrate; a source of liquid; a supply line coupling said source of liquid to said process chamber; a gasifier operatively coupled to said supply line, said gasifier causing a gas to be dissolved into said liquid to form a mixture of said liquid and said gas; means for applying a film of said mixture to one side of said substrate while on said support, said first means being in fluid association with said supply line; and a transmitter configured to apply sonic energy to said substrate. The method comprises, in one aspect: supporting a substrate in a process chamber; supplying a liquid to said process chamber from a source of said liquid via a supply line; dissolving a gas into said liquid with a gasifer operatively coupled to said supply line to form a mixture of said liquid and said gas; applying a film of said mixture to one side of said substrate; and applying sonic energy to said substrate while said mixture is being applied. When used to remove photoresist from substrates, the fluid will preferably be deionized water and the gas will be ozone gas.
摘要翻译：一种用于非浸没式兆声处理工具中的衬底处理的装置和方法，具体包括清洗和/或光刻胶剥离。在一个实施方案中，本发明利用在基材处理期间将气体溶解到与使用点处或附近的液体的概念，例如膜接触器，因此不需要预制的液体/ 通常储存在辅助罐中的气体处理混合物。一方面，本发明是一种装置，包括：处理室，具有用于支撑基板的支撑件; 液体来源; 将所述液体源连接到所述处理室的供应管线; 气化器，其可操作地耦合到所述供应管线，所述气化器引起气体溶解到所述液体中以形成所述液体和所述气体的混合物; 用于在所述支撑件上将所述混合物的膜施加到所述基底的一侧上的装置，所述第一装置与所述供应线流体相连; 以及发射机，被配置为向所述基底施加声能。该方法在一个方面包括：在处理室中支撑衬底; 通过供应管线从所述液体源向所述处理室供应液体; 将气体溶解到所述液体中，其中气体可操作地连接到所述供应管线以形成所述液体和所述气体的混合物; 将所述混合物的膜施加到所述基底的一侧; 以及在施加所述混合物时将声能施加到所述衬底。当用于从基底去除光致抗蚀剂时，流体优选是去离子水，气体将是臭氧气体。

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