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1. 发明申请

WO2010135702A3 LOW TEMPERATURE GST PROCESS 审中-公开
公开(公告)号：WO2010135702A3
公开(公告)日：2010-11-25
申请号：PCT/US2010/035851
申请日：2010-05-21
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ZHENG, Jun-Fei
发明人： ZHENG, Jun-Fei
IPC分类号： H01L21/205 , H01L21/8247 , H01L27/115
摘要： A deposition process to form a conformal phase change material film on the surface of a substrate to produce a memory device wafer comprises providing a substrate to a chamber of a deposition system; providing an activation region; introducing one or more precursors into the chamber upstream of the substrate; optionally introducing one or more co-reactants upstream of the substrate; activating the one or more precursors; heating the substrate; and depositing the phase change material film on the substrate from the one or more precursors by chemical vapor deposition. The deposited phase change material film comprises Ge x Sb y Te z A m in which A is a dopant selected from the group of N, C, In, Sn, and Se. In one implementation, the process is carried out to form GST films doped with carbon and nitrogen, to impart beneficial film growth and performance properties to the film.

2. 发明申请

WO2011119175A1 GERMANIUM ANTIMONY TELLURIDE MATERIALS AND DEVICES INCORPORATING SAME 审中-公开
标题翻译：德国抗微生物细胞材料和装置
公开(公告)号：WO2011119175A1
公开(公告)日：2011-09-29
申请号：PCT/US2010/035854
申请日：2010-05-21
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ZHENG, Jun-Fei
发明人： ZHENG, Jun-Fei
IPC分类号： C01B19/00 , C22C12/00 , C23C16/30 , H01L45/00 , G11C13/00
CPC分类号： H01B1/02 , C01B19/002 , C01B19/007 , C01B21/0828 , C01P2002/50 , C22C16/00 , C22C30/00 , C23C16/305 , C23C16/34 , G11C13/0004 , H01L45/00 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1616 , Y10T428/31678
摘要： Germanium antimony telluride materials are described, e.g., material of the formula Ge x Sb y Te z C m N n , wherein x is about 0.1-0.6, y is about 0-0.7, z is about 0.2-0.9, m is about 0.02-0.20, and n is about 0.2-0.20. One specific composition includes from 0 to 50% Sb, from 50 to 80% Te, from 20 to 50% Ge, from 3 to 20% N and from 2 to 15% carbon, wherein all atomic percentages of all components of the film total to 100 atomic %. Another specific composition includes from 10 to 50% Sb, from 50 to 80% Te, from 10 to 50% Ge, from 3 to 20% N and from 3 to 20% carbon, and wherein all atomic percentages of all components of the film total to 100 atomic %. Material of such composition is useful to form phase change films, e.g., as conformally coated on a phase change memory device substrate to fabricate a phase change random access memory cell.
摘要翻译：描述了锗锑碲材料，例如式GexSbyTezCmNn的材料，其中x为约0.1-0.6，y为约0-0.7，z为约0.2-0.9，m为约0.02-0.20，n为约0.2- 0.20。一种具体组合物包括0至50％的Sb，50至80％的Te，20至50％的Ge，3至20％的N和2至15％的碳，其中膜的所有组分的所有原子百分比至100原子％。另一种具体组合物包括10至50％的Sb，50至80％的Te，10至50％的Ge，3至20％的N和3至20％的碳，并且其中膜的所有组分的所有原子百分数总计100原子％。这种组合物的材料可用于形成相变膜，例如，如相变涂层在相变存储器件衬底上以制造相变随机存取存储器单元。

3. 发明申请

WO2011002705A2 HOLLOW GST STRUCTURE WITH DIELECTRIC FILL 审中-公开
标题翻译：带电介质填充的空心GST结构
公开(公告)号：WO2011002705A2
公开(公告)日：2011-01-06
申请号：PCT/US2010/040178
申请日：2010-06-28
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ZHENG, Jun-Fei
发明人： ZHENG, Jun-Fei
IPC分类号： H01L27/115 , H01L21/8247 , H01L27/10
CPC分类号： H01L45/124 , H01L45/06 , H01L45/144 , H01L45/1616 , H01L45/1641 , H01L45/1691
摘要： A memory cell structure, including a substrate having a via therein bound at first and second ends thereof by electrodes. The via is coated on side surfaces thereof with GST material defining a core that is hollow or at least partially filled with material, e.g., germanium or dielectric material. One or more of such memory cell structures may be integrated in a phase change memory device. The memory cell structure can be fabricated in a substrate containing a via closed at one end thereof with a bottom electrode, by conformally coating GST material on sidewall surface of the via and surface of the bottom electrode enclosing the via, to form an open core volume bounded by the GST material, optionally at least partially filling the open core volume with germanium or dielectric material, annealing the GST material film, and forming a top electrode at an upper portion of the via.
摘要翻译：存储器单元结构，包括其中具有其中通过电极在其第一端和第二端处结合的通孔的衬底。通孔在其侧表面上涂有GST材料，该GST材料限定了空心的或至少部分填充有例如锗或介电材料的材料的芯。一个或多个这样的存储单元结构可以集成在相变存储器件中。存储器单元结构可以在包含通孔的基板中制造，所述通孔在其一端封闭有底部电极，通过在通孔的侧壁表面上共形涂覆GST材料以及封闭通孔的底部电极的表面以形成开放芯体积以GST材料为界，任选地用锗或电介质材料至少部分地填充开口核心体积，退火GST材料膜，并在通孔的上部形成顶部电极。

4. 发明申请

WO2009152108A3 THE USE OF GE AS ISOLATION LAYER ON SBXTEY OR GEXTEY ALLOY TO PREVENT INTERACTION OF TE FROM SBXTEY AND GEXTEY RESULTING IN HIGH TE CONTENT AND FILM CRYSTALLINITY 审中-公开
公开(公告)号：WO2009152108A3
公开(公告)日：2009-12-17
申请号：PCT/US2009/046655
申请日：2009-06-08
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ZHENG, Jun-Fei , ROEDER, Jeffrey, F. , CHEN, Philip, S., H.
发明人： ZHENG, Jun-Fei , ROEDER, Jeffrey, F. , CHEN, Philip, S., H.
IPC分类号： H01L27/115 , H01L21/8247 , H01L21/20
摘要： A multilayer film stack containing germanium, antimony and tellurium that can be annealed to form a GST product material of homogeneous and smooth character, wherein at least one antimony-containing layer is isolated from a tellurium-containing layer by an intervening germanium layer, and the multilayer film stack comprises at least two intervening germanium layers. The multilayer film stack can be formed by vapor deposition techniques such as chemical vapor deposition or atomic layer deposition. The annealable multilayer film stack can be formed in high aspect ratio vias to form phase change memory devices of superior character with respect to the stoichiometric and morphological characteristics of the GST product material.

5. 发明申请

WO2012138615A2 OXIC GERMANIUM-ANTIMONY-TELLURIUM MATERIAL AND PHASE CHANGE MEMORY COMPRISING SAME 审中-公开
标题翻译：氧化锗 - 抗氧化锆材料和相变记忆
公开(公告)号：WO2012138615A2
公开(公告)日：2012-10-11
申请号：PCT/US2012/031917
申请日：2012-04-02
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , ZHENG, Jun-Fei
发明人： ZHENG, Jun-Fei
IPC分类号： H01L27/115 , H01L21/8247
CPC分类号： H01L45/06 , H01L45/126 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A GST material selected from among: (a) GST materials having oxygen incorporated therein at concentration of from 0.10 to 10 atomic %, based on atomic weight of the GST material; and (b) GST materials having a reset current of less than 0.1 milliamps when the GST material is comprised in a GST phase change random access memory device. The GST material can be formed by vapor deposition processes, and utilized in phase change memory devices of varied types to provide devices having reset current values of 0.1 milliamps and lower.
摘要翻译：选自以下的GST材料：（a）基于所述GST材料的原子量，含有0.10〜10原子％浓度的含有氧的GST材料; 和（b）当GST材料包含在GST相变随机存取存储器件中时，复位电流小于0.1毫安的GST材料。 GST材料可以通过气相沉积工艺形成，并用于各种类型的相变存储器件中以提供具有0.1毫安或更低的复位电流值的器件。

6. 发明申请

WO2010065874A2 HIGH CONCENTRATION NITROGEN-CONTAINING GERMANIUM TELLURIDE BASED MEMORY DEVICES AND PROCESSES OF MAKING 审中-公开
标题翻译：含有高浓度含氮化学物质的基于德耳姆的基于记忆体的器件及其制备方法
公开(公告)号：WO2010065874A2
公开(公告)日：2010-06-10
申请号：PCT/US2009/066805
申请日：2009-12-04
申请人： ATMI , ZHENG, Jun-Fei , ROEDER, Jeffrey R. , LI, Weimin , CHEN, Phil
发明人： ZHENG, Jun-Fei , ROEDER, Jeffrey R. , LI, Weimin , CHEN, Phil
IPC分类号： H01L21/8247 , H01L27/115 , H01L21/205
CPC分类号： H01L45/1683 , C23C16/305 , C23C16/34 , H01L45/06 , H01L45/144 , H01L45/1616
摘要： A PCM device has the composition GexTeyNzAm deposited onto a substrate, where x is about 40% to about 60%, y is about 30% to about 49%, and z is about 5% to about 20% and more preferably about 5% to about 40%. The component represented as A is optional and representative of an element of Sb, Sn, In, Ga, or Zn, and m is up to about 15%. The composition is in the form of a film, and the nitrogen allows for the substantially conformal deposition of the film onto the substrate. A CVD process for depositing the PCM comprises delivering a Ge-based precursor and a Te-based precursor in vapor form to a CVD chamber, heating and pressurizing the chamber, and depositing the film onto a substrate. In making a phase change device using this process, the film is annealed and polished.
摘要翻译： PCM装置具有沉积在基底上的组成GexTeyNzAm，其中x为约40％至约60％，y为约30％至约49％，z为约5％至约20％，更优选约5％约40％。表示为A的组分是任选的，并且代表Sb，Sn，In，Ga或Zn的元素，并且m为至多约15％。组合物是膜的形式，并且氮允许膜基本上共形沉积到基底上。用于沉积PCM的CVD方法包括将蒸气形式的基于Ge的前体和Te基前体输送到CVD室，对该室进行加热和加压，以及将该膜沉积在基底上。在制造使用该工艺的相变装置时，对膜进行退火和抛光。

7. 发明申请

WO2006012339A1 MICRO OR BELOW SCALE MULTI-LAYERED HETEOSTRUCTURE 审中-公开
标题翻译：微量或低于标准的多层结构
公开(公告)号：WO2006012339A1
公开(公告)日：2006-02-02
申请号：PCT/US2005/022574
申请日：2005-06-24
申请人： INTEL CORPORATION , ZHENG, Jun-Fei
发明人： ZHENG, Jun-Fei
IPC分类号： H01L23/31
CPC分类号： H01L23/3185 , H01L29/0657 , H01L31/0352 , H01L31/105 , H01L2924/0002 , H01L2924/00
摘要： A heteostructure having a first and a second layer, in micrometer or smaller (e.g. nanometer) scale, arranged in a configuration defining at least one undercut at one side of the second layer, underneath the first layer, is described herein. In various embodiments, the undercut is filled with passivation materials to protect the layers underneath the first layer. Further, in various embodiments, a large metal contact layer including coverage of the first layer sidewall may be employed to provide significant increase in contact area, and to reduce the device contact resist value.
摘要翻译：在本文中描述了具有在微米或更小（例如纳米））刻度的第一和第二层的整体结构，其布置成在第一层下方限定在第二层的一侧的至少一个底切的构型。在各种实施例中，底切部分填充有钝化材料以保护第一层下方的层。此外，在各种实施例中，可以使用包括第一层侧壁的覆盖层的大的金属接触层来提供接触面积的显着增加并且减小器件接触抗蚀剂值。

8. 发明申请

WO2013152088A1 GST DEPOSITION PROCESS 审中-公开
标题翻译： GST沉积工艺
公开(公告)号：WO2013152088A1
公开(公告)日：2013-10-10
申请号：PCT/US2013/035094
申请日：2013-04-03
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： ZHENG, Jun-Fei
IPC分类号： H01L21/8247 , H01L27/115 , H01L21/205
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1233 , H01L45/144 , H01L45/1616 , H01L45/1683
摘要： A method of forming a GST device structure including a substrate having a hole therein bounded at one end by a bottom electrode. The method includes: depositing in the hole, under conditions effective therefor, GST material of crystalline character, so that the GST material of crystalline character grows adhesively and selectively over the bottom electrode and thereafter depositing in the hole, over the GST material of crystalline character therein, a GST material of amorphous character, so that the hole contains a total GST material comprising the GST material of crystalline character and the GST material of amorphous character, wherein the GST material of crystalline character constitutes from 25% to 90% of volume of the total GST material in the hole. Such method is usefully applied to form GST phase change memory cell structures and GST phase change memory devices in which voids, gaps, and seams in the GST material are minimized.
摘要翻译：一种形成GST器件结构的方法，其包括其底部电极在一端界定有孔的衬底。该方法包括：在有效的条件下，在孔中沉积具有结晶特性的GST材料，使得结晶性质的GST材料在底部电极上粘附选择性地生长，然后沉积在孔中，结晶特征的GST材料其中具有无定形特征的GST材料，使得该孔含有包含结晶特征的GST材料和无定形特征的GST材料的总GST材料，其中晶体性质的GST材料占体积的25％至90％孔中总GST材料。这种方法有效地应用于形成GST相变存储器单元结构和GST相变存储器件，其中GST材料中的空隙，间隙和接缝最小化。

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