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1. 发明申请

WO2004109803A1 PLANAR POLYMER MEMORY DEVICE 审中-公开
标题翻译：平面聚合物存储器件
公开(公告)号：WO2004109803A1
公开(公告)日：2004-12-16
申请号：PCT/US2004/014696
申请日：2004-05-11
申请人： ADVANCED MICRO DEVICES, INC. , TRIPSAS, Nicholas, H. , BUYNOSKI, Matthew , OKOROANYANWU, Uzodinma , PANGRLE, Suzette, K.
发明人： TRIPSAS, Nicholas, H. , BUYNOSKI, Matthew , OKOROANYANWU, Uzodinma , PANGRLE, Suzette, K.
IPC分类号： H01L27/00
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0575
摘要： The present invention provides a planar polymer memory device (100) that can operate as a non-volatile memory device. A planar polymer memory device (100) can be formed with two or more electrodes and an electrode extension associated with one electrode, wherein a selectively conductive medium and dielectric separate the electrodes. The method for forming a planar polymer memory device (100) comprises at least one of forming a first electrode (125) with an associated plug, forming a second electrode (140), forming a passive layer (130) over the extension, depositing an organic polymer and patterning the organic polymer (115). The method affords integration of a planar polymer memory device into a semiconductor fabrication process. A thin film diode (TFD) can further be employed with a planar polymer memory device (100) to facilitate programming. The TFD can be formed between the first electrode (125) and the selectively conductive medium or the second electrode (140) and the selectively conductive medium.
摘要翻译：本发明提供可作为非易失性存储器件操作的平面聚合物存储器件（100）。平面聚合物存储器件（100）可以形成有两个或更多个电极和与一个电极相关联的电极延伸部分，其中选择性导电介质和电介质分离电极。用于形成平面聚合物存储器件（100）的方法包括形成具有相关插塞的第一电极（125），形成第二电极（140），在延伸部分上形成钝化层（130），沉积有机聚合物和图案化有机聚合物（115）。该方法将平面聚合物存储器件集成到半导体制造工艺中。还可以与平面聚合物存储器件（100）一起使用薄膜二极管（TFD），以便于编程。 TFD可以形成在第一电极（125）和选择性导电介质或第二电极（140）和选择性导电介质之间。

2. 发明申请

WO2004042737A1 STACKED ORGANIC MEMORY DEVICES AND METHODS OF OPERATING AND FABRICATING 审中-公开
标题翻译：堆叠有机存储器件和操作和制作方法
公开(公告)号：WO2004042737A1
公开(公告)日：2004-05-21
申请号：PCT/US2003/021679
申请日：2003-07-10
申请人： ADVANCED MICRO DEVICES, INC.
发明人： TRIPSAS, Nicholas, H. , OKOROANYANWU, Uzodinma , PANGRLE, Suzette, K. , VANBUSKIRK, Michael, A.
IPC分类号： G11C13/02
CPC分类号： G11C13/0014 , B82Y10/00 , G11C11/5664 , G11C13/0016 , H01L27/28 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0041 , H01L51/0077 , H01L51/0078
摘要： The present invention provides a multi-layer organic memory device (10, 24, 28, 34, 38, 54, 58, 74, 78, 100, 700, 704) that can operate as a non-volatile memory device having a plurality of stacked and/or parallel memory structures constructed therein. A multi-cell and multi-layer organic memory component (30, 34, 50, 54, 70, 74) can be formed with two or more electrodes (110, 122, 132, 140, 220, 244, 332, 348, 432, 448, 514, 560, 616, 704, 710) having a selectively conductive media (706, 708) between the electrodes (110, 122, 132, 140, 220, 244, 332, 348, 432, 448, 514, 560, 616, 704, 710) forming individual cells, while utilizing a partitioning component (40, 44, 48, 60, 64, 68, 80, 84, 88) to enable stacking of additional memory cells on top of or in association with previously formed cells. Memory stacks (30, 34, 50, 54, 70, 74) can be formed by adding additional layers - respective layers separated by additional partitioning components, wherein multiple stacks can be formed in parallel to provide a high-density memory device.
摘要翻译：本发明提供了一种多层有机存储器件（10,24,28,34,38,54,58,74,78,100,700,704），其可以作为非易失性存储器件工作，所述非易失性存储器件具有多个堆叠和/或并行存储器结构。多电池和多层有机存储器组件（30,34,50,54,70,74）可以形成有两个或更多个电极（110,122,132,140,220,244,332,348,432），具有在电极（110,122,132,140,220,244,332,348,432,448,514,560）之间的选择性导电介质（706,708）的电极（448,514,560,616,704,710），616,640,810），同时利用分隔部件（40,44,48,60,64,68,80,84,88），以使得能够在先前与之相关联的情况下堆叠另外的存储器单元形成细胞。存储器堆叠（30,34,50,54,70,74）可以通过添加额外的层 - 通过附加分隔部件隔开的相应层来形成，其中可以并行形成多个堆叠以提供高密度存储器件。

3. 发明申请

WO2003073165A2 SELF-ALIGNED PATTERN FORMATION USING DUAL WAVELENGTHS 审中-公开
标题翻译：使用双倍波长的自对准图案形成
公开(公告)号：WO2003073165A2
公开(公告)日：2003-09-04
申请号：PCT/US2003/004960
申请日：2003-02-21
申请人： ADVANCED MICRO DEVICES, INC.
发明人： OKOROANYANWU, Uzodinma , BOTTELLI, Armando, C.
IPC分类号： G03F7/00
CPC分类号： G03F7/7045 , G03F7/0757 , G03F7/095 , G03F7/2022
摘要： An integrated circuit fabrication process for patterning features at sub-lithographic dimensions is disclosed herein. The process includes sequentially exposing a of a film of arylalkoxysilane with a photobase generator, and catalytic amount of water coated on top of a conventional lipophilic photoresist layer provided over a substrate and exposed to a radiation at a first and a second lithographic wavelengths. The first lithographic wavelength is shorter than the second lithographic wavelength. Exposure to the first lithographic wavelength causes a self-aligned mask to form within the photoresist layer.
摘要翻译：本文公开了用于在亚光刻尺寸下图案化特征的集成电路制造工艺。该方法包括用光碱发生剂顺序地暴露一个芳基烷氧基硅烷膜，并将催化量的水涂覆在设置在基底上的常规亲脂性光致抗蚀剂层的顶部并暴露于第一和第二光刻波长的辐射下。第一光刻波长比第二光刻波长短。暴露于第一光刻波长会在光刻胶层内形成自对准掩模。

4. 发明申请

WO2006039161A3 METHOD AND SYSTEM FOR CONTAMINATION DETECTION AND MONITORING IN A LITHOGRAPHIC EXPOSURE TOOL AND OPERATING METHOD FOR THE SAME UNDER CONTROLLED ATMOSPHERIC CONDITIONS 审中-公开
公开(公告)号：WO2006039161A3
公开(公告)日：2006-04-13
申请号：PCT/US2005/033818
申请日：2005-09-21
申请人： ADVANCED MICRO DEVICES, INC. , KNAPPE, Uwe , OKOROANYANWU, Uzodinma
发明人： KNAPPE, Uwe , OKOROANYANWU, Uzodinma
IPC分类号： G03F7/20
摘要： By using highly efficient detection techniques, such as chromatography and absorption spectroscopy, one or more contaminants may be identified and the concentration thereof may quantitatively be determined. In this way, the adverse effect on critical components of exposure tools, such as reticles and lenses in the form of, for instance, deposited inorganic salts, may significantly be reduced and the process performance may be enhanced.

5. 发明申请

WO2005041319A2 SELF ASSEMBLY OF CONDUCTING POLYMER FOR FORMATION OF POLYMER MEMORY CELL 审中-公开
标题翻译：用于形成聚合物记忆体的导电聚合物的自组装
公开(公告)号：WO2005041319A2
公开(公告)日：2005-05-06
申请号：PCT/US2004/030511
申请日：2004-09-16
申请人： ADVANCED MICRO DEVICES, INC. , BUYNOSKI, Matthew, S. , PANGRLE, Suzette, K. , OKOROANYANWU, Uzodinma , TRIPSAS, Nicholas, H.
发明人： BUYNOSKI, Matthew, S. , PANGRLE, Suzette, K. , OKOROANYANWU, Uzodinma , TRIPSAS, Nicholas, H.
IPC分类号： H01L51/00
CPC分类号： G11C13/0069 , B82Y10/00 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2013/009 , G11C2213/56 , G11C2213/71 , H01L27/28 , H01L51/0012
摘要： The present invention provides a selectively conductive organic semiconductor ( e.g ., polymer) device that can be utilized as a memory cell. A polymer solution including a conducting polymer (22) self assembles relative to a conductive electrode (26). The process affords self-assembly such that a shortest conductive path can be achieved. The method includes depositing a concentrated solution of conducting polymer (23) on a conductive surface (26), applying heat and optionally a vacuum, and permitting the conducting polymer (22) to self-assemble into an organic semiconductor. The organic semiconductor can be employed within single and multi-cell memory devices by forming a structure with two or more electrodes while employing the organic semiconductor along with a passive device between the electrodes. A partitioning component can be integrated with the memory device to facilitate programming and stacking of additional memory cells on top of or in association with previously formed cells.
摘要翻译：本发明提供可用作存储单元的选择性导电的有机半导体（例如，聚合物）器件。包括导电聚合物（22）的聚合物溶液相对于导电电极（26）自组装。该过程提供自组装，使得可以实现最短的导电路径。该方法包括将导电聚合物（23）的浓缩溶液沉积在导电表面（26）上，施加热量和任选的真空，并允许导电聚合物（22）自组装成有机半导体。有机半导体可以在单电池和多电池存储器件中使用，通过形成具有两个或多个电极的结构，同时在电极之间使用有机半导体以及无源器件。分区组件可以与存储器件集成，以便于在先前形成的单元之上或与之前相关联的附加存储器单元的编程和堆叠。

6. 发明申请

WO2005010892A1 POLYMER MEMORY DEVICE FORMED IN VIA OPENING 审中-公开
标题翻译：聚合物存储器件通过开放形成
公开(公告)号：WO2005010892A1
公开(公告)日：2005-02-03
申请号：PCT/US2004/014797
申请日：2004-05-11
申请人： ADVANCED MICRO DEVICES, INC. , TRIPSAS, Nicholas, H. , BUYNOSKI, Matthew , PANGRLE, Suzette, K. , OKOROANYANWU, Uzodinma , HUI, Angela, T. , LYONS, Christopher, F. , SUBRAMANIAN, Ramkumar , LOPATIN, Sergey, D. , NGO, Minh, Van , KHATHURIA, Ashok, M. , CHANG, Mark, S. , CHEUNG, Patrick, K. , OGLESBY, Jane, V.
发明人： TRIPSAS, Nicholas, H. , BUYNOSKI, Matthew , PANGRLE, Suzette, K. , OKOROANYANWU, Uzodinma , HUI, Angela, T. , LYONS, Christopher, F. , SUBRAMANIAN, Ramkumar , LOPATIN, Sergey, D. , NGO, Minh, Van , KHATHURIA, Ashok, M. , CHANG, Mark, S. , CHEUNG, Patrick, K. , OGLESBY, Jane, V.
IPC分类号： G11C13/02
CPC分类号： H01L27/285 , H01L2924/0002 , H01L2924/00
摘要： One aspect of the present invention relates to a method of fabricating a polymer memory device in a via. The method involves providing a semiconductor substrate having at least one metal-containing layer thereon, forming at least one copper contact in the metal-containing layer, forming at least one dielectric layer over the copper contact, forming at least one via in the dielectric layer to expose at least a portion of the copper contact, forming a polymer material in a lower portion of the via, and forming a top electrode material layer in an upper portion of the via.
摘要翻译：本发明的一个方面涉及在通孔中制造聚合物存储器件的方法。该方法包括提供其上具有至少一个含金属层的半导体衬底，在含金属层中形成至少一个铜触点，在铜触点上形成至少一个电介质层，在电介质层中形成至少一个通孔露出铜触点的至少一部分，在通孔的下部形成聚合物材料，并在通孔的上部形成顶部电极材料层。

7. 发明申请

WO2003050614A3 SYSTEM AND METHOD FOR REDUCING PHOTORESIST PHOTO-OXIDATIVE DEGRADATION IN 193 NM PHOTOLITHOGRAPHY 审中-公开
公开(公告)号：WO2003050614A3
公开(公告)日：2003-06-19
申请号：PCT/US2002/039370
申请日：2002-12-09
申请人： ADVANCED MICRO DEVICES, INC.
发明人： OKOROANYANWU, Uzodinma
IPC分类号： G03F7/20
摘要： An exposure section of a 193 nm photolitography system is purged gas containing substantially no oxygen, such as nitrogen or an inert gas. This prevents oxidation of photoresist by photo-induced oxygen species that are produced in conventional 193 nm purged by clean dry air. A scanner and a stepper of the system are preferably calibrated to the optical properties of the purge gas. A protective layer may be provided over the photoresist to further protect the photoresist.

8. 发明申请

WO2003050614A2 SYSTEM AND METHOD FOR REDUCING PHOTORESIST PHOTO-OXIDATIVE DEGRADATION IN 193 NM PHOTOLITHOGRAPHY 审中-公开
标题翻译： 193 NM光刻技术降低光催化降解的系统和方法
公开(公告)号：WO2003050614A2
公开(公告)日：2003-06-19
申请号：PCT/US2002/039370
申请日：2002-12-09
申请人： ADVANCED MICRO DEVICES, INC.
发明人： OKOROANYANWU, Uzodinma
IPC分类号： G03F
CPC分类号： G03F7/70933
摘要： An exposure section of a 193 nm photolitography system is purged gas containing substantially no oxygen, such as nitrogen or an inert gas. This prevents oxidation of photoresist by photo-induced oxygen species that are produced in conventional 193 nm purged by clean dry air. A scanner and a stepper of the system are preferably calibrated to the optical properties of the purge gas. A protective layer may be provided over the photoresist to further protect the photoresist.
摘要翻译： 193nm照相系统的曝光部分是基本上不含氧的吹扫气体，例如氮气或惰性气体。这样可以防止由传统的193nm由干净的干燥空气吹扫的光诱导氧物质对光致抗蚀剂的氧化。扫描器和系统的步进器优选地校准为清洗气体的光学性质。可以在光致抗蚀剂之上提供保护层以进一步保护光致抗蚀剂。

9. 发明申请

WO2002080239A3 PROCESS FOR FORMING SUB-LITHOGRAPHIC PHOTORESIST FEATURES 审中-公开
公开(公告)号：WO2002080239A3
公开(公告)日：2002-10-10
申请号：PCT/US2001/048509
申请日：2001-12-12
申请人： ADVANCED MICRO DEVICES, INC.
发明人： SHIELDS, Jeffrey, A. , OKOROANYANWU, Uzodinma , YANG, Chih-Yuh
IPC分类号： H01L21/027
摘要： A process for forming sub-lithographic features in an integrated circuit is disclosed herein. The process includes modifying a photoresist layer (16) after patterning and development but before it is utilized to pattern the underlying layers. The modified photoresist layer (16) has different etch rates in the vertical and horizontal directions. The modified photoresist layer (16) is trimmed with a plasma etch. A feature (54) included in the trimmed photoresist layer (16) has a sub-lithographic lateral dimension.

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