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2. 发明申请

WO2010033434A3 SIDEWALL FORMING PROCESSES 审中-公开
标题翻译：边框成型工艺
公开(公告)号：WO2010033434A3
公开(公告)日：2010-06-10
申请号：PCT/US2009056716
申请日：2009-09-11
申请人： LAM RES CORP , CIRIGLIANO PETER , ZHU HELEN , KIM JI SOO , SADJADI S M REZA
发明人： CIRIGLIANO PETER , ZHU HELEN , KIM JI SOO , SADJADI S M REZA
IPC分类号： H01L21/3065
CPC分类号： H01L21/31144 , H01L21/0337 , H01L21/312
摘要： An etch layer underlying a patterned photoresist mask is provided. A plurality of sidewall forming processes are performed. Each sidewall forming process comprises depositing a protective layer on the patterned photoresist mask by performing multiple cyclical depositions. Each cyclical deposition involves at least a depositing phase for depositing a deposition layer over surfaces of the patterned photoresist mask and a profile shaping phase for shaping vertical surfaces in the deposition layer. Each sidewall forming process further comprises a breakthrough etch for selectively etching horizontal surfaces of the protective layer with respect to vertical surfaces of the protective layer. Afterwards, the etch layer is etched to form a feature having a critical dimension that is less than the critical dimension of the features in the patterned photoresist mask.
摘要翻译：提供了图案化光刻胶掩模下面的蚀刻层。执行多个侧壁形成工序。每个侧壁形成工艺包括通过执行多个循环沉积在图案化的光致抗蚀剂掩模上沉积保护层。每个循环沉积涉及至少沉积阶段，用于在图案化的光致抗蚀剂掩模的表面上沉积沉积层，以及用于在沉积层中形成垂直表面的轮廓成形阶段。每个侧壁形成工艺还包括用于相对于保护层的垂直表面选择性地蚀刻保护层的水平表面的穿透蚀刻。之后，刻蚀蚀刻层以形成临界尺寸小于图案化光致抗蚀剂掩模中特征的临界尺寸的特征。

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