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1. 发明申请

WO2005036627A1 ABSORBER LAYER FOR DYNAMIC SURFACE ANNEALING PROCESSING 审中-公开
标题翻译：用于动态表面退火处理的吸收层
公开(公告)号：WO2005036627A1
公开(公告)日：2005-04-21
申请号：PCT/US2004/032151
申请日：2004-10-01
申请人： APPLIED MATERIALS, INC. , AUTRYVE, Luc, Van , BENCHER , Chris, D. , JENNINGS, Dean , LIANG, Haifan , MAYUR, Abhilash, J. , YAM, Mark , YEH, Wendy, H. , BROUGH, Richard, A.
发明人： AUTRYVE, Luc, Van , BENCHER , Chris, D. , JENNINGS, Dean , LIANG, Haifan , MAYUR, Abhilash, J. , YAM, Mark , YEH, Wendy, H. , BROUGH, Richard, A.
IPC分类号： H01L21/268
CPC分类号： H01L21/26513 , H01L21/268
摘要： A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300 °C is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.
摘要翻译：一种处理衬底的方法，包括在衬底上沉积包含无定形碳的层，然后将衬底暴露于电磁辐射，在足以将该层加热至至少至少的温度的条件下，具有约600nm至约1000nm之间的一个或多个波长提供约300℃。任选地，该层还包括选自氮，硼，磷，氟及其组合的掺杂剂。在一个方面，包含无定形碳的层是抗反射涂层和吸收层，其吸收电磁辐射并退火衬底的顶表面层。在一个方面，基板在激光退火工艺中暴露于电磁辐射。

2. 发明申请

WO2007097822A3 ENHANCEMENT OF REMOTE PLASMA SOURCE CLEAN FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的远程等离子体源清洁的增强
公开(公告)号：WO2007097822A3
公开(公告)日：2008-02-07
申请号：PCT/US2006061154
申请日：2006-11-21
申请人： APPLIED MATERIALS INC , NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
发明人： NOWAK THOMAS , YIM KANG SUB , TANG SUM-YEE BETTY , LEE KWANGDUK DOUGLAS , NGUYEN VU NGOC TRAN , SINGLETON DENNIS , SEAMONS MARTIN JAY , JANAKIRAMAN KARTHIK , BALASUBRAMANIAN GANESH , AYOUB MOHAMED , YEH WENDY H , DEMOS ALEXANDROS T , M SAAD HICHEM
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要翻译：提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包含硅和碳的阻挡膜以及包括硅，氧和碳的低介电常数膜。这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。反应性物质由含氧气体如O 2和/或含卤素气体如NF 3产生。在室暴露于来自远程等离子体源的反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

3. 发明申请

WO2007097822A2 ENHANCEMENT OF REMOTE PLASMA SOURCE CLEAN FOR DIELECTRIC FILMS 审中-公开
标题翻译：用于电介质膜的远程等离子体源清洁的增强
公开(公告)号：WO2007097822A2
公开(公告)日：2007-08-30
申请号：PCT/US2006/061154
申请日：2006-11-21
申请人： APPLIED MATERIALS, INC. , NOWAK, Thomas , YIM, Kang Sub , TANG, Sum-yee Betty , LEE, Kwangduk Douglas , NGUYEN, Vu Ngoc Tran , SINGLETON, Dennis , SEAMONS, Martin Jay , JANAKIRAMAN, Karthik , BALASUBRAMANIAN, Ganesh , AYOUB, Mohamed , YEH, Wendy H. , DEMOS, Alexandros T. , M'SAAD, Hichem
发明人： NOWAK, Thomas , YIM, Kang Sub , TANG, Sum-yee Betty , LEE, Kwangduk Douglas , NGUYEN, Vu Ngoc Tran , SINGLETON, Dennis , SEAMONS, Martin Jay , JANAKIRAMAN, Karthik , BALASUBRAMANIAN, Ganesh , AYOUB, Mohamed , YEH, Wendy H. , DEMOS, Alexandros T. , M'SAAD, Hichem
IPC分类号： H05H1/24
CPC分类号： C23C16/4405 , B08B7/0035 , H01J37/32357 , H01J37/32862
摘要： Methods for cleaning semiconductor processing chambers used to process carbon-containing films, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films including silicon, oxygen, and carbon are provided. The methods include using a remote plasma source to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber. The reactive species are generated from an oxygen-containing gas, such as O2, and/or a halogen-containing gas, such as NF3. An oxygen-based ashing process may also be used to remove carbon deposits from the interior surfaces of the chamber before the chamber is exposed to the reactive species from the remote plasma source.
摘要翻译：提供了用于处理用于处理含碳膜的半导体处理室的方法，例如非晶碳膜，包括硅和碳的阻挡膜，以及包括硅，氧和碳的低介电常数膜。这些方法包括使用远程等离子体源来产生在腔室中没有RF功率的情况下清洁处理室的内表面的反应物质。反应性物质由含氧气体如O 2和/或含卤素气体如NF 3产生。在室从远程等离子体源暴露于反应物质之前，还可以使用氧基灰化方法从室的内表面去除碳沉积物。

4. 发明申请

WO2007038635A1 HYDROGEN TREATMENT TO IMPROVE PHOTORESIST ADHESION AND REWORK CONSISTENCY 审中-公开
标题翻译：氢化处理提高光电胶粘剂和重量一致性
公开(公告)号：WO2007038635A1
公开(公告)日：2007-04-05
申请号：PCT/US2006/037751
申请日：2006-09-26
申请人： APPLIED MATERIALS, INC. , YEH, Wendy, H.
发明人： YEH, Wendy, H.
IPC分类号： H01L21/311 , H01L21/3105 , G03F7/42
CPC分类号： H01L21/31138 , G03F7/427 , H01L21/0206 , H01L21/3105 , H01L21/31058
摘要： A process for selectively removing photoresist, organic overlayers, and/or polymers/residues from a substrate without altering the surface chemistry and adhesion properties of the underlying substrate layers is provided. Generally, the process includes pretreating the substrate with hydrogen (e.g., by way of a hydrogen-based plasma) prior to deposition of a photoresist layer, and then ashing the substrate with a hydrogen-based plasma to selectively remove the photoresist, organic overlayers, and/or polymers/residues from the substrate during etching, post-etch, rework, etc. The hydrogen-based ashing process of the invention may be used post-etch to remove the residue photoresist, or may be used in a rework stripping process to remove misaligned patterns. The hydrogen-based ashing process following the initial hydrogen surface pretreatment substantially reduces surface chemistry poisoning, while retaining adequate adhesion properties following ashing.
摘要翻译：提供了一种从衬底选择性地去除光致抗蚀剂，有机覆盖层和/或聚合物/残余物而不改变下面的衬底层的表面化学性质和粘附性质的方法。通常，该方法包括在沉积光致抗蚀剂层之前用氢气（例如，通过基于氢的等离子体）预处理衬底，然后用基于氢的等离子体灰化衬底以选择性地去除光致抗蚀剂，有机覆盖层，和/或在蚀刻，蚀刻后，返工等中的来自衬底的聚合物/残余物。本发明的基于氢的灰化方法可以在蚀刻后用于除去残余光致抗蚀剂，或者可以用于返工剥离过程去除不对齐的图案。在初始氢表面预处理之后的氢基灰化过程基本上减少了表面化学中毒，同时在灰化之后保持了足够的粘附性能。

5. 发明申请

WO2005076081A2 RETICLE FABRICATION USING A REMOVABLE HARD MASK 审中-公开
标题翻译：使用可移除的硬掩模进行制造
公开(公告)号：WO2005076081A2
公开(公告)日：2005-08-18
申请号：PCT/US2005002563
申请日：2005-01-27
申请人： APPLIED MATERIALS INC , BENCHER CHRISTOPHER DENNIS , MONTGOMERY MELVIN WARREN , BUXBAUM ALEXANDER , LEE YUNG-HEE YVETTE , DING JIAN , ALMOGY GILAD , YEH WENDY H
发明人： BENCHER CHRISTOPHER DENNIS , MONTGOMERY MELVIN WARREN , BUXBAUM ALEXANDER , LEE YUNG-HEE YVETTE , DING JIAN , ALMOGY GILAD , YEH WENDY H
IPC分类号： G03F1/08 , G03F7/09
CPC分类号： G03F1/68 , G03F1/46 , G03F1/80
摘要： We have reduced the critical dimension bias for reticle fabrication. Pattern transfer to the radiation-blocking layer of the reticle substrate essentially depends upon use of a hard mask to which the pattern is transferred from a photoresist. The photoresist pull back which occurs during pattern transfer to the hard mask is minimalized. In addition, a hard mask material having anti-reflective properties which are matched to the reflective characteristics of the radiation-blocking layer enables a reduction in critical dimension size and an improvement in the pattern feature integrity in the hard mask itself. An anti-reflective hard mask layer left on the radiation-blocking layer provides functionality when the reticle is used in a semiconductor device manufacturing process.
摘要翻译：我们已经降低了光罩制造的临界尺寸偏差。图案转移到掩模版衬底的辐射阻挡层基本上取决于使用图案从光致抗蚀剂转移到的硬掩模。在图案转移到硬掩模期间发生的光致抗蚀剂拉回被最小化。另外，具有与辐射阻挡层的反射特性相匹配的抗反射特性的硬掩模材料使得能够减小临界尺寸尺寸并且改善硬掩模本身中的图案特征完整性。当掩模版用于半导体器件制造工艺时，留在辐射阻挡层上的抗反射硬掩模层提供了功能。

6. 发明申请

WO2005071137A1 PROCESS KIT DESIGN FOR DEPOSITION CHAMBER 审中-公开
标题翻译：沉积室的工艺套件设计
公开(公告)号：WO2005071137A1
公开(公告)日：2005-08-04
申请号：PCT/US2005/001000
申请日：2005-01-13
申请人： APPLIED MATERIALS, INC. , SEN, Soovo , FODOR, Mark A. , SEAMONS, Martin J. , KULKARNI, Priya , SIVARAMAKRISHNAN, Visweswaren , RATHI, Sudha S.R. , SHIMAYAMA, Tsutomu , NOWAK, Thomas , YEH, Wendy H.
发明人： SEN, Soovo , FODOR, Mark A. , SEAMONS, Martin J. , KULKARNI, Priya , SIVARAMAKRISHNAN, Visweswaren , RATHI, Sudha S.R. , SHIMAYAMA, Tsutomu , NOWAK, Thomas , YEH, Wendy H.
IPC分类号： C23C16/44
CPC分类号： C23C16/4412
摘要： The present invention provides a process kit for a semiconductor processing chamber. The processing chamber is a vacuum processing chamber that includes a chamber body defining an interior processing region. The processing region receives a substrate for processing, and also supports equipment pieces of the process kit. The process kit includes a pumping liner (410) configured to be placed within the processing region of the processing chamber, and a C-channel liner (420) configured to be placed along an outer diameter of the pumping liner. The pumping liner and the C-channel liner have novel interlocking features (414, 424) designed to inhibit parasitic pumping of processing or cleaning gases from the processing region. The invention further provides a semiconductor processing chamber having an improved process kit, such as the kit described. In one arrangement, the chamber is a tandem processing chamber.
摘要翻译：本发明提供了一种用于半导体处理室的处理套件。处理室是真空处理室，其包括限定内部处理区域的室主体。处理区域接收用于处理的基板，并且还支持处理套件的设备件。该处理套件包括构造成放置在处理室的处理区域内的泵送衬套（410），以及构造成沿着泵送衬套的外径放置的C形通道衬套（420）。泵送衬管和C形通道衬套具有新颖的互锁特征（414,424），其设计成抑制来自加工区域的处理或清洁气体的寄生泵送。本发明还提供了一种具有改进的处理工具的半导体处理室，例如所述的套件。在一种布置中，室是串联处理室。

7. 发明申请

WO2013163132A1 COMPENSATING CONCENTRATION UNCERTAINITY 审中-公开
标题翻译：补偿浓度不确定度
公开(公告)号：WO2013163132A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/037718
申请日：2013-04-23
申请人： APPLIED MATERIALS, INC. , BALASUBRAMANIAN, Ganesh , SEAMONS, Martin Jay , ALAYAVALLI, Kaushik , LEE, Kwangduk Douglas , YEH, Wendy H. , RATHI, Sudha , VIJAYARAGHAVAN, Krishna , CHAN, Chiu
发明人： BALASUBRAMANIAN, Ganesh , SEAMONS, Martin Jay , ALAYAVALLI, Kaushik , LEE, Kwangduk Douglas , YEH, Wendy H. , RATHI, Sudha , VIJAYARAGHAVAN, Krishna , CHAN, Chiu
IPC分类号： C23C16/455 , C23C16/44
CPC分类号： C23C16/45512 , C23C16/52 , Y10T137/0368 , Y10T137/8593
摘要： Methods and apparatus for depositing uniform boron-containing films are disclosed. A first precursor is delivered to a chamber through a first pathway having a first flow controller and a composition sensor. A second precursor is delivered by a second pathway, including a second flow controller, to a mixing point fluidly coupling the first and second pathways. A controller is coupled to the vibration sensor and the first and second flow controllers. The first precursor may be a mixture of diborane and a diluent gas, and the second precursor is typically a diluent gas. The flow rate of the first precursor may be set by determining a concentration of diborane in the first precursor from the composition sensor reading, and setting the flow rate to maintain a desired flow rate of diborane. The flow rate of the second precursor may be set to maintain a desired flow to the chamber.
摘要翻译：公开了沉积均匀含硼膜的方法和装置。通过具有第一流量控制器和成分传感器的第一路径将第一前体输送到室。第二前体通过包括第二流量控制器的第二路径传送到流体耦合第一和第二路径的混合点。控制器耦合到振动传感器和第一和第二流量控制器。第一前体可以是乙硼烷和稀释气体的混合物，第二前体通常是稀释气体。可以通过从组合物传感器读数确定第一前体中的乙硼烷的浓度并设定流速以维持乙硼烷的期望流速来设定第一前体的流速。可以设置第二前体的流速以保持到腔室的所需流动。

8. 发明申请

WO2005087974A3 CVD PROCESSES FOR THE DEPOSITION OF AMORPHOUS CARBON FILMS 审中-公开
标题翻译：用于沉积不规则碳膜的CVD工艺
公开(公告)号：WO2005087974A3
公开(公告)日：2005-12-15
申请号：PCT/US2005005855
申请日：2005-02-24
申请人： APPLIED MATERIALS INC , SEAMONS MARTIN JAY , YEH WENDY H , RATHI SUDHA S R , PADHI DEENESH , LUAN ANDY HSIN CHIAO , TANG SUM-YEE BETTY , KULKARNI PRIYA , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM , WANG YUXIANG MAY , KWAN MICHAEL CHIU
发明人： SEAMONS MARTIN JAY , YEH WENDY H , RATHI SUDHA S R , PADHI DEENESH , LUAN ANDY HSIN CHIAO , TANG SUM-YEE BETTY , KULKARNI PRIYA , SIVARAMAKRISHNAN VISWESWAREN , KIM BOK HOEN , M SAAD HICHEM , WANG YUXIANG MAY , KWAN MICHAEL CHIU
IPC分类号： C23C16/505 , H01L21/314 , H01L21/768 , C23C16/26
CPC分类号： C23C16/505 , H01L21/3146 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76829
摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.
摘要翻译：提供了沉积无定形碳材料的方法。一方面，本发明提供了一种处理衬底的方法，包括将衬底定位在处理室中，将处理气体引入处理室，其中处理气体包括载气，氢气和一种或多种前体化合物，产生处理气体的等离子体，通过从双频RF源施加电力，以及在基板上沉积无定形碳层。

9. 发明申请

WO2005087974A2 LIQUID PRECURSORS FOR THE CVD DEPOSITION OF AMORPHOUS CARBON FILMS 审中-公开
标题翻译：液相沉积的不规则碳膜的液体前体
公开(公告)号：WO2005087974A2
公开(公告)日：2005-09-22
申请号：PCT/US2005/005855
申请日：2005-02-24
申请人： APPLIED MATERIALS, INC. , SEAMONS, Martin Jay , YEH, Wendy H. , RATHI, Sudha S.R. , PADHI, Deenesh , LUAN, Andy (Hsin Chiao) , TANG, Sum-Yee Betty , KULKARNI, Priya , SIVARAMAKRISHNAN, Visweswaren , KIM, Bok Hoen , M'SAAD, Hichem , WANG, Yuxiang May , KWAN, Michael Chiu
发明人： SEAMONS, Martin Jay , YEH, Wendy H. , RATHI, Sudha S.R. , PADHI, Deenesh , LUAN, Andy (Hsin Chiao) , TANG, Sum-Yee Betty , KULKARNI, Priya , SIVARAMAKRISHNAN, Visweswaren , KIM, Bok Hoen , M'SAAD, Hichem , WANG, Yuxiang May , KWAN, Michael Chiu
IPC分类号： C23C16/26
CPC分类号： C23C16/505 , H01L21/3146 , H01L21/76801 , H01L21/76802 , H01L21/7681 , H01L21/76829
摘要： Methods are provided for depositing amorphous carbon materials. In one aspect, the invention provides a method for processing a substrate including positioning the substrate in a processing chamber, introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of the processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.
摘要翻译：提供了沉积无定形碳材料的方法。一方面，本发明提供了一种处理衬底的方法，包括将衬底定位在处理室中，将处理气体引入处理室，其中处理气体包括载气，氢气和一种或多种前体化合物，产生处理气体的等离子体，通过从双频RF源施加电力，以及在基板上沉积无定形碳层。

10. 发明申请

WO2005076337A1 TECHNIQUES FOR THE USE OF AMORPHOUS CARBON (APF) FOR VARIOUS ETCH AND LITHO INTEGRATION SCHEME 审中-公开
标题翻译：使用不规则碳（APF）进行各种蚀刻和LITHO积分方案的技术
公开(公告)号：WO2005076337A1
公开(公告)日：2005-08-18
申请号：PCT/US2005/000395
申请日：2005-01-07
申请人： APPLIED MATERIALS, INC. , LIU, Wei , HE, Jim Zhongyi , AHN, Sang H. , SHEN, Meihua , M'SAAD, Hichem , YEH, Wendy H. , BENCHER, Christopher D.
发明人： LIU, Wei , HE, Jim Zhongyi , AHN, Sang H. , SHEN, Meihua , M'SAAD, Hichem , YEH, Wendy H. , BENCHER, Christopher D.
IPC分类号： H01L21/308
CPC分类号： G03F7/091 , H01L21/0276 , H01L21/0332 , H01L21/0337 , H01L21/0338 , H01L21/3081 , H01L21/3086 , H01L21/3088 , H01L21/3146
摘要： A method of etching a substrate is provided. The method of etching a substrate includes transferring a pattern into the substrate using a double patterned amorphous carbon layer on the substrate as a hardmask. Optionally, a non-carbon based layer is deposited on the amorphous carbon layer as a capping layer before the pattern is transferred into the substrate.
摘要翻译：提供蚀刻基板的方法。蚀刻基板的方法包括使用基板上的双图案化非晶碳层作为硬掩模将图案转印到基板中。任选地，在将图案转移到基底内之前，将非碳基层沉积在无定形碳层上作为覆盖层。

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