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1. 发明申请

WO2016094693A1 RESISTIVE SWITCHING FOR MEMS DEVICES 审中-公开
标题翻译： MEMS器件的电阻开关
公开(公告)号：WO2016094693A1
公开(公告)日：2016-06-16
申请号：PCT/US2015/065050
申请日：2015-12-10
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
发明人： SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
IPC分类号： G01J5/20 , H01L31/101
CPC分类号： G01J5/20 , G01J5/024 , G01J5/0853 , G01J2005/202 , H01L27/14669 , H01L27/2472 , H01L31/02019 , H01L31/0224 , H01L31/11 , H01L45/1616
摘要： A MEMS device includes a bolometer attached to a silicon wafer by a base portion of at least one anchor structure. The base portion comprises a layer stack having a metal- insulator-metal (MIM) configuration such that the base portion acts as a resistive switch such that, when the first DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state, and, when the second DC voltage is applied to the patterned conductive layer, the base portion transitions from a high resistive state to a low resistive state.
摘要翻译： MEMS装置包括通过至少一个锚结构的基部附接到硅晶片的测辐射热计。基底部分包括具有金属 - 绝缘体 - 金属（MIM）构造的层堆叠，使得基底部分起电阻性开关的作用，使得当第一DC电压施加到图案化的导电层时，基底部分从高电阻状态变为低电阻状态，并且当将第二DC电压施加到图案化导电层时，基极部分从高电阻状态转变为低电阻状态。

2. 发明申请

WO2014150091A1 EPI-POLY ETCH STOP FOR OUT OF PLANE SPACER DEFINED ELECTRODE 审中-公开
标题翻译： EPI-POLY ETCH STOP FOR PLANE SPACER定义电极
公开(公告)号：WO2014150091A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022186
申请日：2014-03-08
申请人： ROBERT BOSCH GMBH , GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
发明人： GRAHAM, Andrew , YAMA, Gary , O'BRIEN, Gary
IPC分类号： H01L21/28
CPC分类号： B81B3/0021 , B81B2201/0271 , B81B2203/04 , B81B2203/053 , B81C1/00095 , B81C1/00166 , B81C2201/0132 , B81C2201/014 , B81C2201/0177 , B81C2203/0136
摘要： In one embodiment, a method of forming an out-of-plane electrode includes forming an oxide layer above an upper surface of a device layer, etching an etch stop perimeter defining trench extending through the oxide layer, forming a first cap layer portion on an upper surface of the oxide layer and within the etch stop perimeter defining trench, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the deposited first material portion, and vapor releasing a portion of the oxide layer with the etch stop portion providing a lateral etch stop.
摘要翻译：在一个实施例中，形成平面外电极的方法包括在器件层的上表面上形成氧化物层，蚀刻限定延伸穿过氧化物层的沟槽的蚀刻停止周界，在第一帽层部分上形成氧化物层的上表面，并且在蚀刻停止周界内限定沟槽，蚀刻延伸穿过第一盖层部分并停止在氧化物层处的第一电极周界，限定沟槽，在第一电极周界限定沟槽内沉积第一材料部分，沉积在沉积的第一材料部分上方的第二盖层部分，以及用蚀刻停止部分提供横向蚀刻停止物来释放一部分氧化物层的蒸气。

3. 发明申请

WO2014100611A1 METHOD OF MANUFACTURING A SENSOR DEVICE HAVING A POROUS THIN-FILM METAL ELECTRODE 审中-公开
标题翻译：制造具有多孔薄膜金属电极的传感器器件的方法
公开(公告)号：WO2014100611A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/076976
申请日：2013-12-20
申请人： ROBERT BOSCH GMBH , FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
发明人： FEYH, Ando , O'BRIEN, Gary , PURKL, Fabian , YAMA, Gary , SAMARAO, Ashwin
IPC分类号： G01N27/414
CPC分类号： H01L21/28008 , G01N27/4146 , H01L29/4238
摘要： A method of fabricating a semiconductor sensor device includes providing a substrate, supporting a source region and a drain region with the substrate, forming an insulator layer above the source region and the drain region, and forming a porous metallic gate region above the insulator layer using plasma enhanced atomic layer deposition (PEALD).
摘要翻译：一种半导体传感器装置的制造方法，其特征在于，包括：在所述基板上设置支撑源极区域和漏极区域的基板，在所述源极区域和所述漏极区域的上方形成绝缘体层，在所述绝缘体层的上方形成多孔金属栅极区域，使用等离子体增强原子层沉积（PEALD）。

4. 发明申请

WO2014036250A2 SERPENTINE IR SENSOR 审中-公开
标题翻译： SERPENTINE红外传感器
公开(公告)号：WO2014036250A2
公开(公告)日：2014-03-06
申请号：PCT/US2013/057280
申请日：2013-08-29
申请人： ROBERT BOSCH GMBH , PURKLY, Fabian , YAMA, Gary , FEYH, Ando , O'BRIEN, Gary
发明人： PURKLY, Fabian , YAMA, Gary , FEYH, Ando , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/02 , G01J5/06 , G01J5/20 , G01J5/08
CPC分类号： H01L31/0232 , G01J5/0225 , G01J5/023 , G01J5/024 , G01J5/045 , G01J5/046 , G01J5/06 , G01J5/0809 , G01J5/0853 , G01J5/20 , H01L31/09
摘要： In one embodiment, a MEMS sensor includes a mirror and an absorber spaced apart from the mirror, the absorber including a plurality of spaced apart conductive legs defining a tortuous path across an area directly above the mirror.
摘要翻译：在一个实施例中，MEMS传感器包括反射镜和与反射镜隔开的吸收器，吸收器包括多个间隔开的导电腿，所述导电腿限定穿过反射镜正上方区域的曲折路径。 / p>

5. 发明申请

WO2010083158A1 METHOD OF FORMING A DEVICE WITH A PIEZORESISTOR AND ACCELEROMETER 审中-公开
标题翻译：用PIEZORESISTOR和加速度计形成装置的方法
公开(公告)号：WO2010083158A1
公开(公告)日：2010-07-22
申请号：PCT/US2010/020750
申请日：2010-01-12
申请人： ROBERT BOSCH GMBH , YAMA, Gary , PRUITT, Beth , BARLIAN, Arnoldus, Alvin
发明人： YAMA, Gary , PRUITT, Beth , BARLIAN, Arnoldus, Alvin
IPC分类号： G01P15/12 , G01C19/56 , H01L21/762 , H01L27/12
CPC分类号： G01C19/56 , G01P15/0802 , G01P15/123 , G01P2015/0817
摘要： A method of forming a device with a piezoresistor is disclosed herein. In one embodiment, the method includes providing a substrate, etching a trench in the substrate to form a vertical wall, growing a piezoresistor layer epitaxially on the vertical wall, and separating the vertical wall from an underlying layer of the substrate that extends along a horizontal plane such that the piezoresistor layer is movable with respect to the underlying layer within the horizontal plane.
摘要翻译：本文公开了一种用压电电阻器形成器件的方法。在一个实施例中，该方法包括提供衬底，蚀刻衬底中的沟槽以形成垂直壁，在垂直壁上外延生长压敏电阻层，以及将垂直壁与沿着水平延伸的衬底的下层分离使得压电电阻层相对于水平面内的下层是可移动的。

6. 发明申请

WO2007021396A2 MICROELECTROMECHANICAL DEVICES AND FABRICATION METHODS 审中-公开
标题翻译：微电子机械装置和制造方法
公开(公告)号：WO2007021396A2
公开(公告)日：2007-02-22
申请号：PCT/US2006/026531
申请日：2006-07-07
申请人： ROBERT BOSCH GMBH , YAMA, Gary
发明人： YAMA, Gary
IPC分类号： B81C5/00
CPC分类号： B81C1/00333
摘要： There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. An embodiment further includes a buried polysilicon layer and a "protective layer" deposited over the buried polysilicon layer to prevent possible erosion of, or damage to the buried polysilicon layer during processing steps. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.
摘要翻译：这里描述和说明了许多发明。在一个方面，本发明涉及MEMS器件以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在室中的机械结构。一个实施例还包括埋入式多晶硅层和“保护层” 沉积在掩埋的多晶硅层上方以防止在处理步骤期间可能侵蚀或损害掩埋的多晶硅层。当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖率，在进行后续处理时保持其完整性，不会显着和/或不利地影响机械结构的性能特性腔室中的机械结构（如果在沉积期间涂覆有材料），和/或促进与高性能集成电路的集成。在一个实施例中，封装机械结构的材料例如是硅（多晶硅，非晶硅或多孔硅，无论是掺杂的还是未掺杂的），碳化硅，硅 - 锗，锗或砷化镓。

7. 发明申请

WO2015048424A1 TITANIUM NITRIDE FOR MEMS BOLOMETERS 审中-公开
标题翻译：用于MEMS BOLOMETER的硝酸钛
公开(公告)号：WO2015048424A1
公开(公告)日：2015-04-02
申请号：PCT/US2014/057689
申请日：2014-09-26
申请人： ROBERT BOSCH GMBH , SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
发明人： SAMARAO, Ashwin, K. , O'BRIEN, Gary , FEYH, Ando , PURKL, Fabian , YAMA, Gary
IPC分类号： H01L27/04 , B81B7/02
CPC分类号： G01J5/20 , G01J5/024
摘要： A method for fabricating a semiconductor device includes patterning a sacrificial layer on a substrate to define a bolometer, with trenches being formed in the sacrificial layer to define anchors for the bolometer, the trenches extending through the sacrificial layer and exposing conductive elements at the bottom of the trenches. A thin titanium nitride layer is then deposited on the sacrificial layer and within the trenches. The titanium nitride layer is configured to form a structural support for the bolometer and to provide an electrical connection to the conductive elements on the substrate.
摘要翻译：一种用于制造半导体器件的方法包括在衬底上图案化牺牲层以限定测辐射热计，其中在牺牲层中形成沟槽以限定测辐射热计的定位器，所述沟槽延伸穿过牺牲层并暴露在底部的导电元件壕沟然后在牺牲层上和沟槽内沉积薄的氮化钛层。氮化钛层被配置成形成用于测辐射热计的结构支撑件，并提供与衬底上的导电元件的电连接。

8. 发明申请

WO2014150089A1 PASSIVATION LAYER FOR HARSH ENVIRONMENTS AND METHODS OF FABRICATION THEREOF 审中-公开
标题翻译：哈桑环境的钝化层及其制造方法
公开(公告)号：WO2014150089A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/022180
申请日：2014-03-08
申请人： ROBERT BOSCH GMBH , FEYH, Ando , PURKL, Fabian , GRAHAM, Andrew , YAMA, Gary
发明人： FEYH, Ando , PURKL, Fabian , GRAHAM, Andrew , YAMA, Gary
IPC分类号： H01L21/205
CPC分类号： B81C1/00809 , B81C2201/016 , H01L21/02601 , H01L23/3192 , H01L45/146 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a passivation layer and a passivation layer for an electronic device. The passivation layer includes at least one passivation film layer and at least one nanoparticle layer. A first film layer is formed of an insulating matrix, such as aluminum oxide (Al 2 O 3 ) and a first layer of a noble metal nanoparticle layer, such as a platinum nanoparticle layer, is deposited on the first film layer. Additional layers are formed of alternating film layers and nanoparticle layers. The resulting passivation layer provides a thin and robust passivation layer of high film quality to protect electronic devices, components, and systems from the disruptive environmental conditions.
摘要翻译：一种制造电子器件的钝化层和钝化层的方法。钝化层包括至少一个钝化膜层和至少一个纳米颗粒层。第一膜层由诸如氧化铝（Al2O3）的绝缘基体形成，并且第一层金属纳米颗粒层（例如铂纳米颗粒层）沉积在第一膜层上。附加层由交替的膜层和纳米颗粒层形成。所得到的钝化层提供了一种薄且坚固的高膜质量的钝化层，以保护电子设备，组件和系统免受破坏性环境条件的影响。

9. 发明申请

WO2014100648A1 THIN-FILM ENCAPSULATED INFRARED SENSOR 审中-公开
标题翻译：薄膜封装的红外传感器
公开(公告)号：WO2014100648A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/077052
申请日：2013-12-20
申请人： ROBERT BOSCH GmbH , PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
发明人： PURKL, Fabian , YAMA, Gary , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , O'BRIEN, Gary
IPC分类号： G01J5/04 , G01J5/20
CPC分类号： H01L31/0203 , G01J5/045 , G01J5/20 , H01L31/09 , H01L31/18
摘要： A method of fabricating a bolometer infrared sensor includes depositing a first sacrificial layer on a surface of a substrate over a sensor region, and forming an absorber structure for the infrared sensor on top of the first sacrificial layer. A second sacrificial layer is deposited on top of the absorber structure. An encapsulating thin film is then deposited on top of the second sacrificial layer. Vent holes are formed in the encapsulating thin film. The first and the second sacrificial layers are removed below the encapsulating thin film to release the absorber structure and form a cavity above the sensing region that extends down to the substrate in which the absorber structure is located via the vent holes. The vent holes are then closed in a vacuum environment to seal the absorber structure within the cavity.
摘要翻译：一种制造测辐射热计红外传感器的方法包括在传感器区域上的衬底表面上沉积第一牺牲层，以及在第一牺牲层的顶部上形成用于红外传感器的吸收体结构。第二牺牲层沉积在吸收体结构的顶部。然后将封装的薄膜沉积在第二牺牲层的顶部上。在封装薄膜中形成排气孔。在封装薄膜下方移除第一和第二牺牲层以释放吸收体结构，并在感测区域上方形成一个空腔，该腔体通过通气孔向下延伸到吸收体结构位于其中的衬底。然后在真空环境中关闭通气孔以密封空腔内的吸收体结构。

10. 发明申请

WO2014099915A1 RESISTIVE MEMS HUMIDITY SENSOR 审中-公开
标题翻译：电阻式MEMS湿度传感器
公开(公告)号：WO2014099915A1
公开(公告)日：2014-06-26
申请号：PCT/US2013/075677
申请日：2013-12-17
申请人： ROBERT BOSCH GMBH , FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
发明人： FEYH, Ando , GRAHAM, Andrew , SAMARAO, Ashwin , YAMA, Gary , O'BRIEN, Gary
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： A semiconductor device includes a substrate, an insulating film provided on a surface of the substrate, and a sensing film formed of a conductive material deposited on top of the insulating film. The sensing film defines at least one conductive path between a first position and a second position on the insulating film. A first circuit connection is electrically connected to the sensing film at the first position on the insulating layer, and a second circuit connection is electrically connected to the sensing film at the second position. A control circuit is operatively connected to the first circuit connection and the second circuit connection for measuring an electrical resistance of the sensing film. The sensing film has a thickness that enables a resistivity of the sensing film to be altered predictably in a manner that is dependent on ambient moisture content.
摘要翻译：半导体器件包括衬底，设置在衬底的表面上的绝缘膜和由沉积在绝缘膜的顶部上的导电材料形成的感测膜。感测膜在绝缘膜上的第一位置和第二位置之间限定至少一个导电路径。第一电路连接在绝缘层上的第一位置处电连接到感测膜，并且第二电路连接在第二位置电连接到感测膜。控制电路可操作地连接到第一电路连接和用于测量感测膜的电阻的第二电路连接。感测膜具有能够以取决于环境水分含量的方式预测地改变感测膜的电阻率的厚度。

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