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    • 5. 发明申请
    • CONTROL SIGNAL INTERFACE CIRCUIT FOR COMPUTER MEMORY MODULES
    • 用于计算机存储器模块的控制信号接口电路
    • WO2006127959A3
    • 2007-07-26
    • PCT/US2006020353
    • 2006-05-25
    • THUNDER CREATIVE TECHNOLOGIESWASHBURN ROBERT DMCCLANAHAN ROBERT F
    • WASHBURN ROBERT DMCCLANAHAN ROBERT F
    • G11C5/14
    • G11C5/04
    • The invention is an electronic circuit designed for incorporation on computer memory modules such as DDR DIMMs. It couples control signals such as address bits, bank selects, enable and even clock signals between the module input connector and the memory devices. The circuit provides low propagation delay, fast rise and fall times with no overshoot or undershoot, and significantly improves timing control compared to memory modules of the present art. Capacitive loading on the motherboard is typically much less than that provided by a single memory device input and is independent of the number of memory devices per bank or the number of banks of memory devices on the memory module. For multiple memory modules connected to the memory bus, capacitive loading is essentially N times the equivalent loading for a single memory module.
    • 本发明是一种设计用于并入诸如DDR DIMM的计算机存储器模块上的电子电路。 它在模块输入连接器和存储器件之间耦合控制信号,如地址位,存储区选择,使能和偶数时钟信号。 该电路提供低传播延迟,快速上升和下降时间,没有过冲或下冲,并且与现有技术的存储器模块相比,显着地提高了时序控制。 主板上的电容负载通常远小于单个存储器件输入提供的负载,并且与每个存储器的存储器件数量或存储器模块上存储器件组的数量无关。 对于连接到存储器总线的多个存储器模块,容性负载基本上是单个存储器模块的等效负载的N倍。
    • 6. 发明申请
    • CONTROL SIGNAL INTERFACE CIRCUIT FOR COMPUTER MEMORY MODULES
    • 用于计算机存储器模块的控制信号接口电路
    • WO2006127959A2
    • 2006-11-30
    • PCT/US2006/020353
    • 2006-05-25
    • THUNDER CREATIVE TECHNOLOGIES, INC.WASHBURN, Robert, D.MCCLANAHAN, Robert, F.
    • WASHBURN, Robert, D.MCCLANAHAN, Robert, F.
    • G11C5/14
    • G11C5/04
    • The invention is an electronic circuit designed for incorporation on computer memory modules such as DDR DIMMs. It couples control signals such as address bits, bank selects, enable and even clock signals between the module input connector and the memory devices. The circuit provides low propagation delay, fast rise and fall times with no overshoot or undershoot, and significantly improves timing control compared to memory modules of the present art. Capacitive loading on the motherboard is typically much less than that provided by a single memory device input and is independent of the number of memory devices per bank or the number of banks of memory devices on the memory module. For multiple memory modules connected to the memory bus, capacitive loading is essentially N times the equivalent loading for a single memory module.
    • 本发明是一种设计用于并入诸如DDR DIMM的计算机存储器模块上的电子电路。 它在模块输入连接器和存储器件之间耦合控制信号,如地址位,存储区选择,使能和偶数时钟信号。 该电路提供低传播延迟,快速上升和下降时间,没有过冲或下冲,并且与现有技术的存储器模块相比,显着地提高了时序控制。 主板上的电容负载通常远小于单个存储器件输入提供的负载,并且与每个存储体的存储器件数量或存储器模块上存储器件组的数量无关。 对于连接到存储器总线的多个存储器模块,容性负载基本上是单个存储器模块的等效负载的N倍。