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    • 1. 发明申请
    • CONTROL SIGNAL INTERFACE CIRCUIT FOR COMPUTER MEMORY MODULES
    • 用于计算机存储器模块的控制信号接口电路
    • WO2006127959A3
    • 2007-07-26
    • PCT/US2006020353
    • 2006-05-25
    • THUNDER CREATIVE TECHNOLOGIESWASHBURN ROBERT DMCCLANAHAN ROBERT F
    • WASHBURN ROBERT DMCCLANAHAN ROBERT F
    • G11C5/14
    • G11C5/04
    • The invention is an electronic circuit designed for incorporation on computer memory modules such as DDR DIMMs. It couples control signals such as address bits, bank selects, enable and even clock signals between the module input connector and the memory devices. The circuit provides low propagation delay, fast rise and fall times with no overshoot or undershoot, and significantly improves timing control compared to memory modules of the present art. Capacitive loading on the motherboard is typically much less than that provided by a single memory device input and is independent of the number of memory devices per bank or the number of banks of memory devices on the memory module. For multiple memory modules connected to the memory bus, capacitive loading is essentially N times the equivalent loading for a single memory module.
    • 本发明是一种设计用于并入诸如DDR DIMM的计算机存储器模块上的电子电路。 它在模块输入连接器和存储器件之间耦合控制信号,如地址位,存储区选择,使能和偶数时钟信号。 该电路提供低传播延迟,快速上升和下降时间,没有过冲或下冲,并且与现有技术的存储器模块相比,显着地提高了时序控制。 主板上的电容负载通常远小于单个存储器件输入提供的负载,并且与每个存储器的存储器件数量或存储器模块上存储器件组的数量无关。 对于连接到存储器总线的多个存储器模块,容性负载基本上是单个存储器模块的等效负载的N倍。
    • 9. 发明申请
    • ELECTRONIC ISOLATOR
    • 电子隔离器
    • WO02097938A3
    • 2003-04-17
    • PCT/US0216443
    • 2002-05-24
    • THUNDER CREATIVE TECHNOLOGIES
    • WASHBURN ROBERT DMCCLANAHAN ROBERT F
    • H03F1/56H03H7/52H03H11/38H03L5/00
    • H03F3/45475H03F2200/168H03F2203/45138H03F2203/45528H03H7/52H03H11/38
    • The present invention is an electronic isolator (210) that provides low input to output insertion loss, high output to input insertion loss, and substantial asymmetric isolation between a source circuit (200) and a load circuit (220). The invention actively reduces noise and reflected power appearing on the isolator output. In numerous embodiments, the invention operates in circuit applications from dc through millimeter wave. Multistage electronic isolator embodiments (1000) provide increased isolation and greater noise reduction. In other embodiments, the electronic isolator (500) also removes noise appearing on its input. In another embodiment, the invention (1500) is configured for high power applications. This embodiment includes circuitry for redirecting power away from the load into resistors or other dissipative elements. In another embodiment, the electronic isolator (1400) is configured to remove signal distortion produced by one or more power amplifiers in the system.
    • 本发明是一种电子隔离器(210),其提供低输入到输出插入损耗,高输出到输入插入损耗以及源电路(200)和负载电路(220)之间的实质上非对称隔离。 本发明主动地减少隔离器输出上出现的噪声和反射功率。 在许多实施例中,本发明在从直流到毫米波的电路应用中工作。 多级电子隔离器实施例(1000)提供增加的隔离和更大的降噪。 在其他实施例中,电子隔离器(500)还消除其输入上出现的噪声。 在另一个实施例中,本发明(1500)被配置用于大功率应用。 该实施例包括用于将功率从负载重定向到电阻器或其它耗散元件的电路。 在另一个实施例中,电子隔离器(1400)被配置为去除系统中由一个或多个功率放大器产生的信号失真。
    • 10. 发明申请
    • CONTROL SIGNAL INTERFACE CIRCUIT FOR COMPUTER MEMORY MODULES
    • 用于计算机存储器模块的控制信号接口电路
    • WO2007051174A3
    • 2008-04-10
    • PCT/US2006060318
    • 2006-10-27
    • WASHBURN ROBERT FMCCLANAHAN ROBERT F
    • WASHBURN ROBERT FMCCLANAHAN ROBERT F
    • G11C8/00
    • G11C5/04G11C5/063G11C7/1066
    • The present system is an electronic circuit designed for incorporation on high-speed computer memory modules such as DDR DIMMs. It couples control signals such as address bits, bank selects, enable and even clock signals between the module input connector and the memory devices. The circuit provides low propagation delay, fast rise and fall times with no overshoot or undershoot, and significantly improves timing control compared to memory modules of the present art. Capacitive loading on the motherboard is typically much less than that provided by a single memory device input and is independent of the number of memory devices per bank or the number of banks of memory devices on the memory module. For multiple memory modules connected to the memory bus, capacitive loading is essentially N times the equivalent loading for a single memory module.
    • 本系统是专门用于高速计算机存储器模块(如DDR DIMM)的电子电路。 它在模块输入连接器和存储器件之间耦合控制信号,如地址位,存储区选择,使能和偶数时钟信号。 该电路提供低传播延迟,快速上升和下降时间,没有过冲或下冲,并且与现有技术的存储器模块相比,显着地提高了时序控制。 主板上的电容负载通常远小于单个存储器件输入提供的负载,并且与每个存储体的存储器件数量或存储器模块上存储器件组的数量无关。 对于连接到存储器总线的多个存储器模块,容性负载基本上是单个存储器模块的等效负载的N倍。