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    • 2. 发明申请
    • OUT-OF-PLANE TRAVEL RESTRICTION STRUCTURES
    • 超平面旅行限制结构
    • WO2013002767A1
    • 2013-01-03
    • PCT/US2011/042175
    • 2011-06-28
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.MILLIGAN, Donald, J.ALLEY, Rodney L.HARTWELL, Peter, G.WALMSLEY, Robert, G.
    • MILLIGAN, Donald, J.ALLEY, Rodney L.HARTWELL, Peter, G.WALMSLEY, Robert, G.
    • B81C1/00B81B7/02
    • H02N1/00B81B3/0051B81B3/0054B81B2201/0235B81B2203/053B81C1/00388G01P2015/0871H01H3/60H01L29/84
    • The present disclosure includes structures and methods of forming structures for restricting out-of-plane travel. One example of forming such structures includes providing a first wafer (100, 220) comprising a bond layer of a particular thickness (101, 221) on a surface of a substrate material (105, 225), removing the bond layer (101, 221) in a first area (103-1, 103-2, 223) to expose the surface of the substrate material (105, 225), applying a mask to at least a portion of a remaining bond layer (109-1, 109-4, 229-1, 229-3) and a portion of the exposed surface of the substrate material in the first area (109-2, 109-3, 229-2) to form a second area exposed on the surface of the substrate material (105, 225), etching the second area to form a cavity (110, 230) in the substrate material (105, 225) and the bond layer (101, 221), and forming by the etching, in the cavity (110, 230), a structure (113-1, 113-2, 233 for restricting out-of-plane travel, where the structure (113-1, 113-2, 233) has a particular height from a bottom of the cavity (115, 235) determined by the particular thickness of the bond layer (101, 221).
    • 本公开包括形成用于限制飞机外行进的结构的结构和方法。 形成这种结构的一个实例包括在衬底材料(105,225)的表面上提供包括特定厚度(101,221)的接合层的第一晶片(100,220),去除接合层(101,221) )在第一区域(103-1,103-2,223)中以暴露所述衬底材料(105,225)的表面,将掩模施加到剩余接合层(109-1,109-和223)的至少一部分上, 4,229-1,229-3)和第一区域(109-2,103-3,229-2)中的基板材料的暴露表面的一部分,以形成暴露在基板表面上的第二区域 蚀刻所述第二区域以在所述基底材料(105,225)和所述接合层(101,221)中形成空腔(110,230),并且通过所述蚀刻在所述空腔(110)中形成 ,230),用于限制平面外行进的结构(113-1,113-2,233),其中结构(113-1,113-2,233)具有距腔的底部的特定高度( 115,235)由粘合剂l的特定厚度确定 ayer(101,221)。
    • 7. 发明申请
    • THREE PHASE CAPACITANCE-BASED SENSING
    • 三相电容传感器
    • WO2010107436A1
    • 2010-09-23
    • PCT/US2009/037648
    • 2009-03-19
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.WALMSLEY, Robert, G.
    • WALMSLEY, Robert, G.
    • G01P15/08B81B7/02B81C3/00
    • G01P15/125B81B3/0086B81B7/008B81B2201/0235B81B2203/0136G01P15/131G01P15/18G01P2015/0814G01P2015/082
    • Various systems and methods for sensing are provided. In one embodiment, a sensing system is provided that includes a first electrode array disposed on a proof mass, and a second electrode array disposed on a planar surface of a support structure. The proof mass is attached to the support structure via a compliant coupling such that the first electrode array is positioned substantially parallel to and faces the second electrode array and the proof mass is capable of displacement relative to the support structure. The first electrode array includes a plurality of first patterns of electrodes and the second electrode array includes a plurality of second patterns of electrodes. The sensing system further includes circuitry configured to provide an input voltage to each of the second patterns of electrodes to produce an electrical null position for the first electrode array.
    • 提供了用于感测的各种系统和方法。 在一个实施例中,提供了一种感测系统,其包括设置在检测质量块上的第一电极阵列和设置在支撑结构的平坦表面上的第二电极阵列。 检测质量通过柔性联接件附接到支撑结构,使得第一电极阵列基本上平行于第二电极阵列并面对第二电极阵列,并且检测质量块能够相对于支撑结构移位。 第一电极阵列包括多个电极的第一图案,第二电极阵列包括多个第二图案的电极。 感测系统还包括被配置为向每个第二电极图形提供输入电压以产生第一电极阵列的电零位置的电路​​。
    • 9. 发明申请
    • CONTACT LITHOGRAPHY APPARATUS, SYSTEM AND METHOD
    • 联系人地平线设备,系统和方法
    • WO2008048491A2
    • 2008-04-24
    • PCT/US2007/021813
    • 2007-10-12
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L. P.WU, WeiWANG, Shih-YuanLI, ZhiyongWALMSLEY, Robert
    • WU, WeiWANG, Shih-YuanLI, ZhiyongWALMSLEY, Robert
    • G03F7/00G03F7/20
    • G03F7/0002B82Y10/00B82Y40/00G03F7/7035
    • A contact lithography system (100, 200) includes a patterning tool (110, 228a, 510) bearing a pattern (112); a substrate chuck (214) for chucking a substrate (130, 228b) to receive the pattern (112) from the patterning tool (110, 228a, 510); where the system (100, 200) deflects a portion of either the patterning tool (110, 228a, 510) or the substrate (130, 228b) to bring the patterning tool (110, 228a, 510) and a portion of the substrate (130, 228b) into contact; and a stepper (260) for repositioning either or both of the patterning tool (110, 228a, 510) and substrate (130, 228b) to align the pattern (112) with an additional portion of the substrate (130, 228b) to also receive the pattern (112). A method of performing contact lithography comprising: deflecting a portion of either a patterning tool (110, 228a, 510) or a substrate (130, 228b) to bring the patterning tool (110, 228a, 510) and a portion of the substrate (130, 228b) into contact; and repositioning either or both of the patterning tool (110, 228a, 510) and substrate (130, 228b) to align a pattern (112) on the patterning tool (110, 228a, 510) with an additional portion of the substrate (130, 228b) to also receive the pattern (112).
    • 接触光刻系统(100,200)包括具有图案(112)的图案形成工具(110,228a,510); 用于夹持基板(130,228b)以从所述图形化工具(110,228a,510)接收所述图案(112)的基板卡盘(214); 其中所述系统(100,200)偏转所述图案形成工具(110,228a,510)或所述衬底(130,228b)的一部分以使所述图案形成工具(110,228a,510)和所述衬底的一部分 130,228b)接触; 以及用于重新定位所述图案形成工具(110,228a,510)和衬底(130,228b)中的一个或两个以使所述图案(112)与所述衬底(130,228b)的附加部分对准的步进器(260) 接收图案(112)。 一种执行接触光刻的方法,包括:使图案形成工具(110,228a,510)或衬底(130,228b)的一部分偏转以使图案形成工具(110,228a,510)和衬底的一部分 130,228b)接触; 以及重新定位图案形成工具(110,228a,510)和衬底(130,228b)中的一个或两个以使图案形成工具(110,228a,510)上的图案(112)与衬底的附加部分(130 ,228b)以也接收图案(112)。
    • 10. 发明申请
    • TWO CONDUCTOR THERMALLY ASSISTED MAGNETIC MEMORY
    • 两个导体热辅助磁记忆
    • WO2005106889A1
    • 2005-11-10
    • PCT/US2005/014232
    • 2005-04-26
    • HEWLETT-PACKARD DEVELOPMENT COMPANY L.P.PERNER, Frederick A.WALMSLEY, Robert CTRAN, Lung T.
    • PERNER, Frederick A.WALMSLEY, Robert CTRAN, Lung T.
    • G11C11/16
    • G11C11/16G11C11/1675
    • A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell 202 having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field 500 is established by a first write current 360 flowing from a first voltage potential to a second voltage potential as applied to the first conductor 204. A second write magnetic field 502 is established by a second write current 362 flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor 206. The voltage potential of the first conductor 204 is greater than the voltage potential of the second conductor 206. As a result, a third current 364, flows from the first conductor 204 through the SVM cell 202 to the second conductor 206. The SVM cell 202 has an internal resistance such that the flowing current 364 generates heat 366 within the SVM cell 202. As the SVM cell 202 is self heated, the coercivity of the SVM cell 202 falls below the combined write magnetic fields 500, 502.
    • 对具有材料的选定的两个导体自旋阀存储器(SVM)单元202执行热辅助写入操作的方法,其中矫顽力在温度升高时降低。 在特定实施例中,通过施加到第一导体204上的从第一电压电位流向第二电压电位的第一写入电流360建立第一写入磁场500.第二写入磁场502通过第二写入 电流362从施加到第二导体206的第三电压电位流向第四电压电位。第一导体204的电压电位大于第二导体206的电压电位。结果,第三电流364, 从第一导体204通过SVM单元202流向第二导体206. SVM单元202具有内部电阻,使得流动电流364在SVM单元202内产生热量366.由于SVM单元202是自加热的, SVM单元202的矫顽力低于组合写入磁场500,502。