专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2005106889A1 TWO CONDUCTOR THERMALLY ASSISTED MAGNETIC MEMORY 审中-公开
标题翻译：两个导体热辅助磁记忆
公开(公告)号：WO2005106889A1
公开(公告)日：2005-11-10
申请号：PCT/US2005/014232
申请日：2005-04-26
申请人： HEWLETT-PACKARD DEVELOPMENT COMPANY L.P. , PERNER, Frederick A. , WALMSLEY, Robert C , TRAN, Lung T.
发明人： PERNER, Frederick A. , WALMSLEY, Robert C , TRAN, Lung T.
IPC分类号： G11C11/16
CPC分类号： G11C11/16 , G11C11/1675
摘要： A method of performing a thermally assisted write operation on a selected two conductor spin valve memory (SVM) cell 202 having a material wherein the coercivity is decreased upon an increase in temperature. In a particular embodiment, a first write magnetic field 500 is established by a first write current 360 flowing from a first voltage potential to a second voltage potential as applied to the first conductor 204. A second write magnetic field 502 is established by a second write current 362 flowing from a third voltage potential to a fourth voltage potential as applied to the second conductor 206. The voltage potential of the first conductor 204 is greater than the voltage potential of the second conductor 206. As a result, a third current 364, flows from the first conductor 204 through the SVM cell 202 to the second conductor 206. The SVM cell 202 has an internal resistance such that the flowing current 364 generates heat 366 within the SVM cell 202. As the SVM cell 202 is self heated, the coercivity of the SVM cell 202 falls below the combined write magnetic fields 500, 502.
摘要翻译：对具有材料的选定的两个导体自旋阀存储器（SVM）单元202执行热辅助写入操作的方法，其中矫顽力在温度升高时降低。在特定实施例中，通过施加到第一导体204上的从第一电压电位流向第二电压电位的第一写入电流360建立第一写入磁场500.第二写入磁场502通过第二写入电流362从施加到第二导体206的第三电压电位流向第四电压电位。第一导体204的电压电位大于第二导体206的电压电位。结果，第三电流364，从第一导体204通过SVM单元202流向第二导体206. SVM单元202具有内部电阻，使得流动电流364在SVM单元202内产生热量366.由于SVM单元202是自加热的， SVM单元202的矫顽力低于组合写入磁场500,502。

IPRDB

热门服务

关于我们

友情链接

联系方式