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1. 发明申请

WO2011109266A4 METHOD AND APPARATUS FOR SINGLE STEP SELECTIVE NITRIDATION 审中-公开
公开(公告)号：WO2011109266A4
公开(公告)日：2011-09-09
申请号：PCT/US2011/026423
申请日：2011-02-28
申请人： APPLIED MATERIALS, INC. , GANGULY, Udayan , GUARINI, Theresa Kramer , ROGERS, Matthew Scott , YOKOTA, Yoshitaka , SWENBERG, Johanes S. , BEVAN, Malcolm J.
发明人： GANGULY, Udayan , GUARINI, Theresa Kramer , ROGERS, Matthew Scott , YOKOTA, Yoshitaka , SWENBERG, Johanes S. , BEVAN, Malcolm J.
IPC分类号： H01L21/318
摘要： Methods and apparatus for selective one-step nitridation of semiconductor substrates is provided. Nitrogen is selectively incorporated in silicon regions of a semiconductor substrate having silicon regions and silicon oxide regions by use of a selective nitridation process. Nitrogen containing radicals may be directed toward the substrate by forming a nitrogen containing plasma and filtering or removing ions from the plasma, or a thermal nitridation process using selective precursors may be performed. A remote plasma generator may be coupled to a processing chamber, optionally including one or more ion filters, showerheads, and radical distributors, or an in situ plasma may be generated and one or more ion filters or shields disposed in the chamber between the plasma generation zone and the substrate support.

2. 发明申请

WO2013070917A1 APPARATUS AND METHOD TO MEASURE TEMPERATURE OF 3D SEMICONDUCTOR STRUCTURES VIA LASER DIFFRACTION 审中-公开
标题翻译：通过激光衍射测量三维半导体结构温度的装置和方法
公开(公告)号：WO2013070917A1
公开(公告)日：2013-05-16
申请号：PCT/US2012/064153
申请日：2012-11-08
申请人： APPLIED MATERIALS, INC. , PAN, Heng , ROGERS, Matthew Scott , HUNTER, Aaron Muir , MOFFATT, Stephen
发明人： PAN, Heng , ROGERS, Matthew Scott , HUNTER, Aaron Muir , MOFFATT, Stephen
IPC分类号： H01L21/66
CPC分类号： G01J5/08 , G01J5/0007 , G01J5/0803 , G01J2005/0074 , G01J2005/0077
摘要： Embodiments of the present invention generally relate to apparatus for and methods of measuring and monitoring the temperature of a substrate having a 3D feature thereon. The apparatus include a light source for irradiating a substrate having a 3D feature thereon, a focus lens for gathering and focusing reflected light, and an emissometer for detecting the emissivity of the focused reflected light. The apparatus may also include a beam splitter and an imaging device. The imaging device provides a magnified image of the diffraction pattern of the reflected light. The method includes irradiating a substrate having a 3D feature thereon with light, and focusing reflected light with a focusing lens. The focused light is then directed to a sensor and the emissivity of the substrate is measured. The reflected light may also impinge upon an imaging device to generate a magnified image of the diffraction pattern of the reflected light.
摘要翻译：本发明的实施例一般涉及用于测量和监测其上具有3D特征的基板的温度的方法的装置。该装置包括用于照射其上具有3D特征的基板的光源，用于聚焦和聚焦反射光的聚焦透镜，以及用于检测聚焦反射光的发射率的发射计。该装置还可以包括分束器和成像装置。成像装置提供反射光的衍射图案的放大图像。该方法包括用光照射具有3D特征的基板，并且将聚焦透镜聚焦在反射光上。然后将聚焦的光导向传感器，并测量衬底的发射率。反射光也可能撞击成像装置以产生反射光的衍射图案的放大图像。

3. 发明申请

WO2014022184A1 APPARATUS AND METHOD FOR SELECTIVE OXIDATION AT LOWER TEMPERATURE USING REMOTE PLASMA SOURCE 审中-公开
标题翻译：使用远程等离子体源在较低温度下选择性氧化的装置和方法
公开(公告)号：WO2014022184A1
公开(公告)日：2014-02-06
申请号：PCT/US2013/051985
申请日：2013-07-25
申请人： APPLIED MATERIALS, INC. , PAN, Heng , ROGERS, Matthew Scott , TJANDRA, Agus S. , OLSEN, Christopher S.
发明人： PAN, Heng , ROGERS, Matthew Scott , TJANDRA, Agus S. , OLSEN, Christopher S.
IPC分类号： H01L21/324 , H01L21/02
CPC分类号： H01L21/02238 , H01L21/02068 , H01L21/02164 , H01L21/02252
摘要： Devices and methods for selectively oxidizing silicon are described herein. An apparatus for selective oxidation of exposed silicon surfaces includes a thermal processing chamber with a plurality of walls, first inlet connection and a second inlet connection, wherein the walls define a processing region within the processing chamber, a substrate support within the processing chamber, a hydrogen source connected with the first inlet connection, a heat source connected with the hydrogen source, and a remote plasma source connected with the second inlet connection and an oxygen source. A method for selective oxidation of non-metal surfaces, can include positioning a substrate in a processing chamber at a temperature less than 800°C, flowing hydrogen into the processing chamber, generating a remote plasma comprising oxygen, mixing the remote plasma with the hydrogen gas in the processing chamber to create an activated processing gas, and exposing the substrate to the activated gas.
摘要翻译：本文描述了用于选择性氧化硅的装置和方法。用于暴露的硅表面的选择性氧化的设备包括具有多个壁的热处理室，第一入口连接和第二入口连接，其中壁限定处理室内的处理区域，处理室内的衬底支撑件，与第一入口连接的氢源，与氢源连接的热源以及与第二入口连接和氧源连接的远程等离子体源。用于非金属表面的选择性氧化的方法可以包括将基底定位在温度低于800℃的处理室中，将氢气流入处理室，产生包含氧的远程等离子体，将远程等离子体与氢处理室中的气体以产生活化的处理气体，并将基板暴露于活化气体。

4. 发明申请

WO2012102756A1 FLOATING GATES AND METHODS OF FORMATION 审中-公开
标题翻译：浮动门和形成方法
公开(公告)号：WO2012102756A1
公开(公告)日：2012-08-02
申请号：PCT/US2011/045635
申请日：2011-07-28
申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew Scott , CHEN, Po-Ta , TANG, Jing
发明人： ROGERS, Matthew Scott , CHEN, Po-Ta , TANG, Jing
IPC分类号： H01L21/8247 , H01L27/115
CPC分类号： H01L21/28273 , H01L21/31116 , H01L21/32105 , H01L21/3211 , H01L21/32137 , H01L27/11521 , H01L29/42324
摘要： The present invention generally relates to a floating gate structure and method of forming the same. The floating gate structure has an upper portion which is wider than a middle portion of the floating gate structure. The upper portion may have a flared, rounded or bulbous shape instead of being pointed or having sharp corners. The reduction in pointed or sharp features of the upper portion reduces the electric field intensity near the upper portion, which decreases current leakage through the interpoly dielectric. The method includes forming a nitride cap on the upper surface of the floating gate structure to assist in shaping the floating gate. The floating gate is then formed using multiple selective oxidation and etching processes.
摘要翻译：本发明一般涉及浮栅结构及其形成方法。浮栅结构具有比浮栅结构的中间部分宽的上部。上部可以具有喇叭形，圆形或球形形状，而不是尖的或具有尖角。上部的尖锐或尖锐特征的减小减小了上部附近的电场强度，这减少了通过多晶硅电介质的电流泄漏。该方法包括在浮动栅极结构的上表面上形成氮化物盖，以帮助浮动栅极成形。然后使用多个选择性氧化和蚀刻工艺形成浮栅。

5. 发明申请

WO2012112187A1 METHOD AND APPARATUS FOR MULTIZONE PLASMA GENERATION 审中-公开
标题翻译：多重等离子体生成的方法和装置
公开(公告)号：WO2012112187A1
公开(公告)日：2012-08-23
申请号：PCT/US2011/045626
申请日：2011-07-27
申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew Scott , HUA, Zhong Qiang , OLSEN, Christopher S.
发明人： ROGERS, Matthew Scott , HUA, Zhong Qiang , OLSEN, Christopher S.
IPC分类号： H05H1/34 , H01L21/3065 , H01L21/683
CPC分类号： C23C16/513 , C23C16/45565 , C23C16/4584 , C23C16/481 , C23C16/505 , C23C16/517 , H01J37/321 , H01J37/32357 , H01J37/3244
摘要： Embodiments of the present invention provide a method and apparatus for plasma processing a substrate to form a film on the substrate and devices disposed thereon by controlling the ratio of ions to radicals in the plasma at a given pressure. A given pressure may be maintained to promote ion production using one plasma source, and a second plasma source may be used to provide additional radicals. In one embodiment, a low pressure plasma is generated in a processing region having the substrate positioned therein, and a high pressure plasma is generated in separate region. Radicals from the high pressure plasma are injected into the processing region having the low pressure plasma, thus, altering the natural distribution of radicals to ions at a given operating pressure. The resulting process and apparatus enables tailoring of the ion to radical ratio to allow better control of forming films on high aspect ratio features, and thus improve corner rounding, conformality of sidewall to bottom trench growth, and selective growth.
摘要翻译：本发明的实施例提供了一种方法和装置，用于通过在给定压力下控制离子与等离子体中的自由基的比例来等离子体处理衬底以在衬底上和其上设置的器件上形成膜。可以保持给定的压力以促进使用一个等离子体源的离子产生，并且可以使用第二等离子体源来提供额外的自由基。在一个实施例中，在其中定位有基板的处理区域中产生低压等离子体，并且在分离的区域中产生高压等离子体。来自高压等离子体的自由基被注入到具有低压等离子体的处理区域中，从而在给定的操作压力下改变自由基对离子的自然分布。所得到的方法和装置能够定制离子与自由基比例，以便更好地控制高纵横比特征上的成膜，从而改善角落圆化，侧壁到底部沟槽生长的共形性以及选择性生长。

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