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1. 发明申请

WO2011082118A3 IMAGE SENSOR WITH DOPED TRANSFER GATE 审中-公开
标题翻译：带传输门的图像传感器
公开(公告)号：WO2011082118A3
公开(公告)日：2011-08-18
申请号：PCT/US2010062118
申请日：2010-12-27
申请人： OMNIVISION TECH INC , DOAN HUNG QUOC , STEVENS ERIC GORDON
发明人： DOAN HUNG QUOC , STEVENS ERIC GORDON
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14806
摘要： An image sensor (900) includes an array of pixels, with at least one pixel including a photodetector (902) formed in a substrate layer (912) and a transfer gate (910) disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions (1104). A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge -to- voltage conversion region shared by the photodetectors. An implant region (1406) formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is is devoid of the implant region.
摘要翻译：图像传感器（900）包括像素阵列，其中至少一个像素包括形成在基底层（912）中的光电检测器（902）和邻近光电检测器设置的传输门（910）。衬底层还包括多个电荷 - 电压转换区域（1104）。单个光电检测器可以将收集的电荷转移到单个电荷到电压转换区域，或者多个光电检测器可以将收集的电荷转移到由光电检测器共享的公共电荷 - 电压转换区域。当掺杂剂注入到衬底层中以形成源极/漏极注入区域时形成的注入区域（1406）仅设置在每个传输栅极的一部分中，而每个电荷 - 电压转换区域没有植入区域。

2. 发明申请

WO2010053557A2 BACK-ILLUMINATED CMOS IMAGE SENSORS 审中-公开
标题翻译：后置照明CMOS图像传感器
公开(公告)号：WO2010053557A2
公开(公告)日：2010-05-14
申请号：PCT/US2009/005989
申请日：2009-11-05
申请人： EASTMAN KODAK COMPANY , ANDERSON, Todd, Jeffery , MCCARTEN, John, P. , SUMMA, Joseph, R. , TIVARUS, Cristian, Alexandru , STEVENS, Eric, Gordon
发明人： ANDERSON, Todd, Jeffery , MCCARTEN, John, P. , SUMMA, Joseph, R. , TIVARUS, Cristian, Alexandru , STEVENS, Eric, Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14627 , H01L27/1463 , H01L27/1464 , H01L27/14689
摘要： A back-illuminated image sensor includes a sensor layer disposed between an insulating layer and a circuit layer electrically connected to the sensor layer. An imaging area includes a plurality of photodetectors is formed in the sensor layer and a well that spans the imaging area. The well can be disposed between the backside of the sensor layer and the photodetectors, or the well can be a buried well formed adjacent to the backside of the sensor layer with a region including formed between the photodetectors and the buried well. One or more side wells can be formed laterally adjacent to each photodetector. The dopant in the well has a segregation coefficient that causes the dopant to accumulate on the sensor layer side of an interface between the sensor layer and the insulating layer.
摘要翻译：背照式图像传感器包括设置在电连接到传感器层的绝缘层和电路层之间的传感器层。成像区域包括在传感器层中形成多个光电检测器和跨越成像区域的阱。阱可以设置在传感器层的背面和光电检测器之间，或者阱可以是与传感器层的背面相邻形成的掩埋阱，其中区域包括形成在光电探测器和掩埋阱之间。一个或多个侧孔可以横向邻近于每个光电检测器形成。阱中的掺杂剂具有使掺杂剂积聚在传感器层和绝缘层之间的界面的传感器层侧上的分离系数。

3. 发明申请

WO2008030371A3 IMPLANT AT SHALLOW TRENCH ISOLATION CORNER 审中-公开
标题翻译：植入在浅田园隔离角
公开(公告)号：WO2008030371A3
公开(公告)日：2008-04-17
申请号：PCT/US2007018997
申请日：2007-08-29
申请人： EASTMAN KODAK CO , DOAN HUNG QUOC , STEVENS ERIC GORDON
发明人： DOAN HUNG QUOC , STEVENS ERIC GORDON
IPC分类号： H01L21/762
CPC分类号： H01L21/76237 , H01L21/823481 , H01L27/1463 , H01L27/14689
摘要： A method for fabricating corner implants in the shallow trench isolation regions of an image sensor includes the steps of forming a photoresist layer on a first hard mask layer overlying an etch-stop layer on a semiconductor substrate. The photoresist mask is patterned to create an opening and the portion of the first hard mask layer exposed in the opening is etched down to the etch-stop layer. A first dopant is implanted into the semiconductor substrate through the exposed etch-stop layer. The photoresist mask is removed and a second hard mask layer is formed on the remaining structure and etched to create sidewall spacers along the side edges of the first hard mask layer. The etch stop layer and the semiconductor substrate positioned between the sidewall spacers are etched to create a trench and a second dopant implanted into the side and bottom walls of the trench.
摘要翻译：一种用于在图像传感器的浅沟槽隔离区中制造角落注入的方法包括以下步骤：在覆盖半导体衬底上的蚀刻停止层的第一硬掩模层上形成光致抗蚀剂层。将光致抗蚀剂掩模图案化以形成开口，并且暴露在开口中的第一硬掩模层的部分被蚀刻到蚀刻停止层。通过暴露的蚀刻停止层将第一掺杂剂注入到半导体衬底中。去除光致抗蚀剂掩模，并且在剩余结构上形成第二硬掩模层并且蚀刻以沿第一硬掩模层的侧边缘形成侧壁间隔物。腐蚀停止层和位于侧壁间隔物之间的半导体衬底被蚀刻以形成沟槽和注入到沟槽的侧壁和底壁中的第二掺杂剂。

4. 发明申请

WO2007038107A2 PHOTODETECTOR AND N-LAYER STRUCTURE FOR IMPROVED COLLECTION 审中-公开
标题翻译：光电探测器和N层结构改进收集
公开(公告)号：WO2007038107A2
公开(公告)日：2007-04-05
申请号：PCT/US2006/036559
申请日：2006-09-18
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon , NICHOLS, David, Newell
发明人： STEVENS, Eric, Gordon , NICHOLS, David, Newell
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H01L31/035236
摘要： An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is between the substrate and the second layer, and the plurality of photodetectors is disposed in the second layer and abut the first layer.
摘要翻译：具有包括多个第一导电类型的光电检测器的图像区域的图像传感器包括第二导电类型的衬底; 跨越图像区域的第一导电类型的第一层; 第二导电类型的第二层; 其中第一层在衬底和第二层之间，并且多个光电探测器设置在第二层中并邻接第一层。

5. 发明申请

WO2011090602A1 METHOD FOR FORMING DEEP ISOLATION IN IMAGERS 审中-公开
标题翻译：在图像中形成深度隔离的方法
公开(公告)号：WO2011090602A1
公开(公告)日：2011-07-28
申请号：PCT/US2010/060368
申请日：2010-12-15
申请人： OMNIVISION TECHNOLOGIES, INC. , DOAN, Hung, Quoc , STEVENS, Eric, Gordon
发明人： DOAN, Hung, Quoc , STEVENS, Eric, Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L21/2253 , H01L27/14683
摘要： An image sensor (800) having an imaging area that includes a substrate layer (806) and a plurality of pixels formed therein. Multiple pixels each include a photodetector (801) formed in the substrate layer and deep isolation regions (803). Isolation layers (804a, 804b, 804c, 804d) are formed in the substrate layer by performing a series of implants of one or more dopants of a first conductivity type into the substrate layer. Each isolation layer implant is performed with a different energy than the other isolation layer implants in the series and each implant implants the one or more dopants into the entire imaging area. The photodetectors are formed in the substrate layer by performing a series of implants of one or more dopants of a second conductivity type into each pixel in the substrate layer. Each photodetector implant (802a, 802b, 802c, 802d) is performed with a different energy than the other photodetector implants in the series.
摘要翻译：一种具有成像区域的图像传感器（800），该成像区域包括衬底层（806）和形成在其中的多个像素。多个像素各自包括形成在衬底层和深度隔离区域（803）中的光电检测器（801）。通过将一个或多个第一导电类型的掺杂剂的一系列植入物进入衬底层，在衬底层中形成隔离层（804a，804b，804c，804d）。每个隔离层植入物以与串联中的其它隔离层植入物不同的能量来执行，并且每个植入物将一种或多种掺杂剂植入整个成像区域。通过在衬底层中的每个像素中执行一系列对第二导电类型的掺杂剂的一种或多种注入物，在衬底层中形成光电检测器。每个光电检测器植入物（802a，802b，802c，802d）以与该系列中的其它光电检测器植入物不同的能量来执行。

6. 发明申请

WO2008030371A2 IMPLANT AT SHALLOW TRENCH ISOLATION CORNER 审中-公开
标题翻译：植入在浅层隔离墙上
公开(公告)号：WO2008030371A2
公开(公告)日：2008-03-13
申请号：PCT/US2007/018997
申请日：2007-08-29
申请人： EASTMAN KODAK COMPANY , DOAN, Hung, Quoc , STEVENS, Eric, Gordon
发明人： DOAN, Hung, Quoc , STEVENS, Eric, Gordon
IPC分类号： H01L21/762
CPC分类号： H01L21/76237 , H01L21/823481 , H01L27/1463 , H01L27/14689
摘要： A method for fabricating corner implants in the shallow trench isolation regions of an image sensor includes the steps of forming a photoresist layer on a first hard mask layer overlying an etch-stop layer on a semiconductor substrate. The photoresist mask is patterned to create an opening and the portion of the first hard mask layer exposed in the opening is etched down to the etch-stop layer. A first dopant is implanted into the semiconductor substrate through the exposed etch-stop layer. The photoresist mask is removed and a second hard mask layer is formed on the remaining structure and etched to create sidewall spacers along the side edges of the first hard mask layer. The etch stop layer and the semiconductor substrate positioned between the sidewall spacers are etched to create a trench and a second dopant implanted into the side and bottom walls of the trench.
摘要翻译：用于在图像传感器的浅沟槽隔离区域中制造拐角植入物的方法包括以下步骤：在覆盖半导体衬底上的蚀刻停止层的第一硬掩模层上形成光致抗蚀剂层。图案化光致抗蚀剂掩模以产生开口，并且暴露在开口中的第一硬掩模层的部分被蚀刻到蚀刻停止层。通过暴露的蚀刻停止层将第一掺杂剂注入到半导体衬底中。去除光致抗蚀剂掩模，并且在剩余结构上形成第二硬掩模层，并蚀刻以沿着第一硬掩模层的侧边缘产生侧壁间隔物。蚀刻停止层和位于侧壁间隔物之间的半导体衬底被蚀刻以产生沟槽，并且第二掺杂剂注入到沟槽的侧壁和底壁中。

7. 发明申请

WO2005020333A2 LIGHT SHIELD FOR SOLID-STATE IMAGE SENSORS 审中-公开
标题翻译：适用于固态图像传感器的光屏蔽
公开(公告)号：WO2005020333A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/025829
申请日：2004-08-10
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric Gordon
发明人： STEVENS, Eric Gordon
IPC分类号： H01L31/00
CPC分类号： H01L27/14601 , H01L27/14806
摘要： An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.
摘要翻译：图像传感器包括含有光敏区域的基板; 跨越所述衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中第一层在光敏区域的部分上方形成遮光区域以及形成电路互连和阻挡区域以防止在非接触处的触点 - 成像区域，第二层仅在非成像区域上跨越第一层的互连区域和阻挡区域。

8. 发明申请

WO2009120317A1 A PHOTODETECTOR HAVING AN EXTENDED DEPLETION DEPTH 审中-公开
标题翻译：具有延伸深度深度的照相机
公开(公告)号：WO2009120317A1
公开(公告)日：2009-10-01
申请号：PCT/US2009/001835
申请日：2009-03-24
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric, Gordon , DOAN, Hung, Quoc , WUU, Shou-Gwo , CHANG, Chung-Wei
发明人： STEVENS, Eric, Gordon , DOAN, Hung, Quoc , WUU, Shou-Gwo , CHANG, Chung-Wei
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14689
摘要： An image sensor includes an imaging area that includes a plurality of pixels (600) that are formed in a substrate layer (502) of a first conductivity type. Each pixel includes a collection region (514) that is formed in a portion of the substrate layer and doped with a dopant of a first conductivity type. A plurality of wells (604) are disposed in portions of the substrate layer and doped with another dopant of the second conductivity type. Each well is positioned laterally adjacent to each collection region. A buried layer (508) spans the imaging area and is disposed in a portion of the substrate layer that is beneath the photodetectors (512) and the wells. The buried layer (506) is doped with a dopant of a second conductivity type. Each collection region, each well, and the buried layer (508) are formed such that a region (506) of the substrate layer having substantially the same doping as the substrate layer resides between each collection region and the buried layer.
摘要翻译：图像传感器包括具有形成在第一导电类型的衬底层（502）中的多个像素（600）的成像区域。每个像素包括形成在衬底层的一部分中并掺杂有第一导电类型的掺杂剂的收集区域（514）。多个阱（604）设置在衬底层的部分中并且掺杂有另一种第二导电类型的掺杂剂。每个井横向定位在每个收集区域附近。掩埋层（508）跨越成像区域，并且设置在基底层的位于光电检测器（512）和孔下面的部分中。掩埋层（506）掺杂有第二导电类型的掺杂剂。每个收集区域，每个阱和掩埋层（508）形成为使得具有与衬底层基本上相同的掺杂的衬底层的区域（506）驻留在每个收集区域和掩埋层之间。

9. 发明申请

WO2005020333A3 LIGHT SHIELD FOR SOLID-STATE IMAGE SENSORS 审中-公开
标题翻译：固态图像传感器的光罩
公开(公告)号：WO2005020333A3
公开(公告)日：2005-04-28
申请号：PCT/US2004025829
申请日：2004-08-10
申请人： EASTMAN KODAK CO , STEVENS ERIC GORDON
发明人： STEVENS ERIC GORDON
IPC分类号： H01L27/146 , H01L27/148
CPC分类号： H01L27/14601 , H01L27/14806
摘要： An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.
摘要翻译：图像传感器包括含有感光区域的基板; 跨越衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中第一层在感光区域的部分上形成遮光区域，以及形成电路互连和阻挡区域，以防止在非接触的接触处尖峰进入衬底或栅极以及仅在非成像区域上跨越第一层的互连和屏障区域的第二层。

10. 发明申请

WO2011082118A2 IMAGE SENSOR WITH DOPED TRANSFER GATE 审中-公开
标题翻译：带传输门的图像传感器
公开(公告)号：WO2011082118A2
公开(公告)日：2011-07-07
申请号：PCT/US2010/062118
申请日：2010-12-27
申请人： OMNIVISION TECHNOLOGIES, INC. , DOAN, Hung, Quoc , STEVENS, Eric, Gordon
发明人： DOAN, Hung, Quoc , STEVENS, Eric, Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14806
摘要： An image sensor includes an array of pixels, with at least one pixel including a photodetector formed in a substrate layer and a transfer gate disposed adjacent to the photodetector. The substrate layer further includes multiple charge-to-voltage conversion regions. A single photodetector can transfer collected charge to a single charge-to-voltage conversion region, or alternatively multiple photodetectors can transfer collected charge to a common charge-to- voltage conversion region shared by the photodetectors. An implant region formed when dopants are implanted into the substrate layer to form source/drain implant regions is disposed in only a portion of each transfer gate while each charge-to-voltage conversion region is substantially devoid of the implant region.
摘要翻译：图像传感器包括像素阵列，其中至少一个像素包括形成在基底层中的光电检测器和邻近光电检测器设置的传输栅极。衬底层还包括多个电荷 - 电压转换区域。单个光电检测器可以将收集的电荷转移到单个电荷到电压转换区域，或者多个光电检测器可以将收集的电荷转移到由光电检测器共享的公共电荷 - 电压转换区域。当掺杂剂注入到衬底层中以形成源极/漏极注入区域时形成的注入区域仅设置在每个传输栅极的一部分中，而每个电荷 - 电压转换区域基本上没有植入区域。

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