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    • 1. 发明申请
    • CCD IMAGE SENSORS HAVING MULTIPLE OVERFLOW DRAINS
    • 具有多个溢流排水的CCD图像传感器
    • WO2010141091A1
    • 2010-12-09
    • PCT/US2010/001621
    • 2010-05-28
    • EASTMAN KODAK COMPANYWANG, ShenMEISENZAHL, Eric JohnNICHOLS, David Newell
    • WANG, ShenMEISENZAHL, Eric JohnNICHOLS, David Newell
    • H01L27/148
    • H01L27/14887
    • A charge-coupled device (CCD) image sensor (206) includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region (312) of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases (314,316,318,320 ) that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions (326) are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region (324) of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions (322) are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.
    • 电荷耦合器件(CCD)图像传感器(206)包括具有第一导电类型的半导体材料层。 第二导电类型的水平CCD沟道区(312)设置在半导体材料的层中。 水平CCD通道区域包括多个相位(314,316,318,320),用于将光电荷移动通过水平CCD通道区域。 不同的溢出漏极区域(326)设置在半导体材料层中,溢出漏极区域仅电连接到水平CCD沟道区域的一个特定相位。 可以使用第二导电类型的缓冲区(324)将每个溢流漏极电连接到水平CCD通道的一个特定相。 多个阻挡区域(322)设置在半导体材料层中,每个阻挡区域设置在每个溢流漏极和电连接到漏极的一个特定相之间。