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1. 发明申请

WO2005020333A2 LIGHT SHIELD FOR SOLID-STATE IMAGE SENSORS 审中-公开
标题翻译：适用于固态图像传感器的光屏蔽
公开(公告)号：WO2005020333A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/025829
申请日：2004-08-10
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric Gordon
发明人： STEVENS, Eric Gordon
IPC分类号： H01L31/00
CPC分类号： H01L27/14601 , H01L27/14806
摘要： An image sensor includes a substrate containing photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metalization structure wherein the first layer forms the light shield regions over portions of the photosensitive area as well as forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area, and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging area.
摘要翻译：图像传感器包括含有光敏区域的基板; 跨越所述衬底的绝缘体; 以及多层金属化结构的第一和第二层，其中第一层在光敏区域的部分上方形成遮光区域以及形成电路互连和阻挡区域以防止在非接触处的触点 - 成像区域，第二层仅在非成像区域上跨越第一层的互连区域和阻挡区域。

2. 发明申请

WO2008073247A1 TWO EPITAXIAL LAYERS WITH BURIED SUBCOLLECTOR TO REDUCE CROSSTALK IN AN IMAGE SENSOR 审中-公开
标题翻译：两个外延层与BURIED SUBCOLLECTOR减少图像传感器中的CROSSTALK
公开(公告)号：WO2008073247A1
公开(公告)日：2008-06-19
申请号：PCT/US2007/024888
申请日：2007-12-05
申请人： EASTMAN KODAK COMPANY , LAVINE, James Philip , STEVENS, Eric Gordon
发明人： LAVINE, James Philip , STEVENS, Eric Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate (10) of a first conductivity type having an image area wi.th -a plurality of photosensitive sites (70), wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector (40) of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括第一导电类型的基板（10），其具有第二至第三多个感光部位（70）的图像区域，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极（40），所述第二电导率收集另外部分所产生的电荷，否则其将扩散到相邻的光敏部位。

3. 发明申请

WO2010068249A1 TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的分离区域
公开(公告)号：WO2010068249A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/006375
申请日：2009-12-03
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric Gordon , DOAN, Hung Quoc
发明人： STEVENS, Eric Gordon , DOAN, Hung Quoc
IPC分类号： H01L27/146
CPC分类号： H01L27/14689 , H01L21/76224 , H01L27/1463
摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.
摘要翻译：沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。

4. 发明申请

WO2010068236A1 SHALLOW TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的浅层分离区域
公开(公告)号：WO2010068236A1
公开(公告)日：2010-06-17
申请号：PCT/US2009/006103
申请日：2009-11-13
申请人： EASTMAN KODAK COMPANY , STEVENS, Eric Gordon
发明人： STEVENS, Eric Gordon
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14689
摘要： An image sensor includes an imaging area that includes a plurality of pixels, with each pixel (500) including a photosensitive charge storage region (618) formed in a substrate. A passivation implantation region (616) contiguously surrounds the side wall and bottom surfaces of each trench in the one or more trench isolation regions. A portion of each passivation implantation region is laterally adjacent to a respective charge storage region and resides only in an isolation gap disposed between the respective charge storage region and a respective trench isolation region and does not substantially reside under the charge storage region. Each passivation implantation region is formed by implanting one or more dopants at a low energy into the side wall and bottom surfaces of each trench after annealing the image sensor and prior to filling the trenches with an insulating material.
摘要翻译：图像传感器包括包括多个像素的成像区域，每个像素（500）包括形成在基板中的光敏电荷存储区域（618）。钝化注入区域（616）连续地围绕所述一个或多个沟槽隔离区域中的每个沟槽的侧壁和底表面。每个钝化注入区域的一部分横向相邻于相应的电荷存储区域，并且仅驻留在设置在相应的电荷存储区域和相应沟槽隔离区域之间的隔离间隙中，并且基本上不位于电荷存储区域下方。每个钝化注入区域通过在退火图像传感器之后和在用绝缘材料填充沟槽之前将低能量的一种或多种掺杂剂注入每个沟槽的侧壁和底表面中来形成。

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