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    • 1. 发明申请
    • METHODS AND APPARATUS FOR THE MANUFACTURE OF MICROSTRUCTURES
    • 制备微结构的方法和装置
    • WO2006111766A2
    • 2006-10-26
    • PCT/GB2006/001468
    • 2006-04-21
    • 3T TECHNOLOGIES LIMITEDSPEAKMAN, Stuart, Philip
    • SPEAKMAN, Stuart, Philip
    • G03F7/12B81C1/00428H01L27/1292H01L29/41733H01L29/42384H01L29/4908H01L29/66757H01L29/66765H01L29/78603H01L29/7869H01L51/0017
    • A method of manufacturing microstructures is disclosed, the method comprising a applying a mask to substrate; forming a pattern in the mask; processing the substrate according to the pattern; and mechanically removing the mask from the substrate. A polymer mask is disclosed for manufacturing micro scale structure, the polymer mask comprising a thin, preferably ultra thin flexible film. A method of manufacturing an integrated circuit is disclosed, the method comprising forming a plurality of isolated semiconductor devices on a common substrate; and connecting some of the devices. Apparatus for manufacturing microstructures is disclosed comprising: a mechanism for coating a mass substrate to create a structure; a mechanism for removing a mask from the substrate; and processing apparatus. A thin film transistor is disclosed comprising drain source and gate electrodes, the drain and source electrode being separated by a semiconductor, and the gate electrode being separated from the semiconductor by an insulator, comprising a bandgap alignment layer disposed between a semiconductor and the insulator.
    • 公开了一种制造微结构的方法,所述方法包括将掩模施加于基底; 在面具中形成图案; 根据图案处理基板; 并从衬底机械地去除掩模。 公开了用于制造微尺度结构的聚合物掩模,聚合物掩模包括薄的,优选超薄的柔性膜。 公开了一种制造集成电路的方法,所述方法包括在公共基板上形成多个隔离半导体器件; 并连接一些设备。 公开了用于制造微结构的装置,包括:用于涂覆质量基底以产生结构的机构; 用于从基板去除掩模的机构; 和处理装置。 公开了一种薄膜晶体管,其包括漏源极和栅电极,漏极和源极由半导体分隔开,并且栅电极通过绝缘体与半导体分离,包括设置在半导体和绝缘体之间的带隙对准层。
    • 3. 发明申请
    • PASSIVATION OF CERAMIC PIEZOELECTRIC INK JET PRINT HEADS
    • 陶瓷压电喷墨打印头的钝化
    • WO1995007820A1
    • 1995-03-23
    • PCT/GB1994001977
    • 1994-09-12
    • XAAR LIMITEDASHE, JamesPHILLIPS, Christopher, DavidSPEAKMAN, Stuart
    • XAAR LIMITED
    • B41J02/16
    • B41J2/1642B41J2/1606B41J2/1609B41J2/1646
    • A process for the passivation of the channel walls of an ink jet print head channel of ceramic piezoelectric material and which enables the deposition of a continuous coating on the walls of a deep channel without depolarising the material comprises depositing a coating comprising inorganic material by: (a) providing an ink jet print head component containing said channel and (b) while maintaining the bulk temperature of the actuating component which contains said channel at a temperature of below 200 DEG C and at which not more than 30 % depolarisation of the material occurs during passivation, exposing the surface of the channel walls to be passivated to a homogenised vapour of the coating material, said vapour having undergone multiple scattering during transport thereof from the source of the vapour to said surface. The process may be employed to deposit a plurality of layers which may be of differing composition, and the invention also provides ceramic piezoelectric ink jet print heads the channels walls of which have been coated with particular combinations of layers of differing compositions.
    • 用于钝化陶瓷压电材料的喷墨打印头通道的通道壁的方法,其能够在深通道的壁上沉积连续涂层而不使材料去极化包括通过以下步骤沉积包含无机材料的涂层:( a)提供包含所述通道的喷墨打印头部件,和(b)同时保持在低于200℃的温度下包含所述通道的致动部件的体温,并且在该温度下不发生不超过30%的材料去极化 在钝化期间,将要钝化的通道壁的表面暴露于涂覆材料的均质蒸汽,所述蒸气在从蒸气源运送到所述表面的过程中经历了多次散射。 该方法可以用于沉积可能具有不同组成的多个层,并且本发明还提供陶瓷压电喷墨打印头,其通道壁已经涂覆有不同组成的层的特定组合。
    • 4. 发明申请
    • METHODS AND APPARATUS FOR THE MANUFACTURE OF MICROSTRUCTURES
    • 制备微结构的方法和装置
    • WO2006111766A3
    • 2007-01-18
    • PCT/GB2006001468
    • 2006-04-21
    • 3T TECHNOLOGIES LTDSPEAKMAN STUART PHILIP
    • SPEAKMAN STUART PHILIP
    • G03F7/12C23C14/04
    • G03F7/12B81C1/00428H01L27/1292H01L29/41733H01L29/42384H01L29/4908H01L29/66757H01L29/66765H01L29/78603H01L29/7869H01L51/0017
    • A method of manufacturing microstructures is disclosed, the method comprising a applying a mask to substrate; forming a pattern in the mask; processing the substrate according to the pattern; and mechanically removing the mask from the substrate. A polymer mask is disclosed for manufacturing micro scale structure, the polymer mask comprising a thin, preferably ultra thin flexible film. A method of manufacturing an integrated circuit is disclosed, the method comprising forming a plurality of isolated semiconductor devices on a common substrate; and connecting some of the devices. Apparatus for manufacturing microstructures is disclosed comprising: a mechanism for coating a mass substrate to create a structure; a mechanism for removing a mask from the substrate; and processing apparatus. A thin film transistor is disclosed comprising drain source and gate electrodes, the drain and source electrode being separated by a semiconductor, and the gate electrode being separated from the semiconductor by an insulator, comprising a bandgap alignment layer disposed between a semiconductor and the insulator.
    • 公开了一种制造微结构的方法,所述方法包括将掩模施加于基底; 在面具中形成图案; 根据图案处理基板; 并从衬底机械地去除掩模。 公开了用于制造微尺度结构的聚合物掩模,聚合物掩模包括薄的,优选超薄的柔性膜。 公开了一种制造集成电路的方法,所述方法包括在公共基板上形成多个隔离半导体器件; 并连接一些设备。 公开了用于制造微结构的装置,包括:用于涂覆质量基底以产生结构的机构; 用于从基板去除掩模的机构; 和处理装置。 公开了一种薄膜晶体管,其包括漏源极和栅电极,漏极和源极由半导体分隔开,并且栅电极通过绝缘体与半导体分离,包括设置在半导体和绝缘体之间的带隙对准层。
    • 10. 发明申请
    • METHODS AND APPARATUS FOR THE MANUFACTURE OF MICROSTRUCTURES
    • 用于制造微结构的方法和装置
    • WO2008047144A1
    • 2008-04-24
    • PCT/GB2007/004012
    • 2007-10-19
    • 3T TECHNOLOGIES LIMITEDSPEAKMAN, Stuart, Philip
    • SPEAKMAN, Stuart, Philip
    • H01L51/00G03F7/42
    • H01L51/0016H01L27/283H01L51/0011H01L51/0545
    • A method of manufacturing microstructures is disclosed, the method comprising a applying a mask to substrate; forming a pattern in the mask; processing the substrate according to the pattern; and mechanically removing the mask from the substrate. A polymer mask is disclosed for manufacturing micro scale structure, the polymer mask comprising a thin, preferably ultra thin flexible film. A method of manufacturing an integrated circuit is disclosed, the method comprising forming a plurality of isolated semiconductor devices on a common substrate; and connecting some of the devices. Apparatus for manufacturing microstructures is disclosed comprising: a mechanism for coating a mass substrate to create a structure; a mechanism for removing a mask from the substrate; and processing apparatus. A thin film transistor is disclosed comprising drain source and gate electrodes, the drain and source electrode being separated by a semiconductor, and the gate electrode being separated from the semiconductor by an insulator, comprising a bandgap alignment layer disposed between a semiconductor and the insulator.
    • 公开了一种制造微结构的方法,所述方法包括将掩模施加到基底上; 在面具中形成图案; 根据图案处理基板; 并从衬底机械地去除掩模。 公开了用于制造微尺度结构的聚合物掩模,聚合物掩模包括薄的,优选超薄的柔性膜。 公开了一种制造集成电路的方法,所述方法包括在公共基板上形成多个隔离半导体器件; 并连接一些设备。 公开了用于制造微结构的装置,包括:用于涂覆质量基底以产生结构的机构; 用于从衬底去除掩模的机构; 和处理装置。 公开了一种薄膜晶体管,其包括漏极源极和栅极电极,漏极和源极由半导体分隔开,并且栅电极通过绝缘体与半导体分离,包括设置在半导体和绝缘体之间的带隙对准层。