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1. 发明申请

WO2006111766A2 METHODS AND APPARATUS FOR THE MANUFACTURE OF MICROSTRUCTURES 审中-公开
标题翻译：制备微结构的方法和装置
公开(公告)号：WO2006111766A2
公开(公告)日：2006-10-26
申请号：PCT/GB2006/001468
申请日：2006-04-21
申请人： 3T TECHNOLOGIES LIMITED , SPEAKMAN, Stuart, Philip
发明人： SPEAKMAN, Stuart, Philip
CPC分类号： G03F7/12 , B81C1/00428 , H01L27/1292 , H01L29/41733 , H01L29/42384 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78603 , H01L29/7869 , H01L51/0017
摘要： A method of manufacturing microstructures is disclosed, the method comprising a applying a mask to substrate; forming a pattern in the mask; processing the substrate according to the pattern; and mechanically removing the mask from the substrate. A polymer mask is disclosed for manufacturing micro scale structure, the polymer mask comprising a thin, preferably ultra thin flexible film. A method of manufacturing an integrated circuit is disclosed, the method comprising forming a plurality of isolated semiconductor devices on a common substrate; and connecting some of the devices. Apparatus for manufacturing microstructures is disclosed comprising: a mechanism for coating a mass substrate to create a structure; a mechanism for removing a mask from the substrate; and processing apparatus. A thin film transistor is disclosed comprising drain source and gate electrodes, the drain and source electrode being separated by a semiconductor, and the gate electrode being separated from the semiconductor by an insulator, comprising a bandgap alignment layer disposed between a semiconductor and the insulator.
摘要翻译：公开了一种制造微结构的方法，所述方法包括将掩模施加于基底; 在面具中形成图案; 根据图案处理基板; 并从衬底机械地去除掩模。公开了用于制造微尺度结构的聚合物掩模，聚合物掩模包括薄的，优选超薄的柔性膜。公开了一种制造集成电路的方法，所述方法包括在公共基板上形成多个隔离半导体器件; 并连接一些设备。公开了用于制造微结构的装置，包括：用于涂覆质量基底以产生结构的机构; 用于从基板去除掩模的机构; 和处理装置。公开了一种薄膜晶体管，其包括漏源极和栅电极，漏极和源极由半导体分隔开，并且栅电极通过绝缘体与半导体分离，包括设置在半导体和绝缘体之间的带隙对准层。

2. 发明申请

WO2008047144A1 METHODS AND APPARATUS FOR THE MANUFACTURE OF MICROSTRUCTURES 审中-公开
标题翻译：用于制造微结构的方法和装置
公开(公告)号：WO2008047144A1
公开(公告)日：2008-04-24
申请号：PCT/GB2007/004012
申请日：2007-10-19
申请人： 3T TECHNOLOGIES LIMITED , SPEAKMAN, Stuart, Philip
发明人： SPEAKMAN, Stuart, Philip
IPC分类号： H01L51/00 , G03F7/42
CPC分类号： H01L51/0016 , H01L27/283 , H01L51/0011 , H01L51/0545
摘要： A method of manufacturing microstructures is disclosed, the method comprising a applying a mask to substrate; forming a pattern in the mask; processing the substrate according to the pattern; and mechanically removing the mask from the substrate. A polymer mask is disclosed for manufacturing micro scale structure, the polymer mask comprising a thin, preferably ultra thin flexible film. A method of manufacturing an integrated circuit is disclosed, the method comprising forming a plurality of isolated semiconductor devices on a common substrate; and connecting some of the devices. Apparatus for manufacturing microstructures is disclosed comprising: a mechanism for coating a mass substrate to create a structure; a mechanism for removing a mask from the substrate; and processing apparatus. A thin film transistor is disclosed comprising drain source and gate electrodes, the drain and source electrode being separated by a semiconductor, and the gate electrode being separated from the semiconductor by an insulator, comprising a bandgap alignment layer disposed between a semiconductor and the insulator.
摘要翻译：公开了一种制造微结构的方法，所述方法包括将掩模施加到基底上; 在面具中形成图案; 根据图案处理基板; 并从衬底机械地去除掩模。公开了用于制造微尺度结构的聚合物掩模，聚合物掩模包括薄的，优选超薄的柔性膜。公开了一种制造集成电路的方法，所述方法包括在公共基板上形成多个隔离半导体器件; 并连接一些设备。公开了用于制造微结构的装置，包括：用于涂覆质量基底以产生结构的机构; 用于从衬底去除掩模的机构; 和处理装置。公开了一种薄膜晶体管，其包括漏极源极和栅极电极，漏极和源极由半导体分隔开，并且栅电极通过绝缘体与半导体分离，包括设置在半导体和绝缘体之间的带隙对准层。

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