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1. 发明申请

WO2005106592A3 HIGH RESOLUTION IN-SITU ILLUMINATION SOURCE MEASUREMENT IN PROJECTION IMAGING SYSTEMS 审中-公开
标题翻译：投影成像系统中的高分辨率原位照度源测量
公开(公告)号：WO2005106592A3
公开(公告)日：2006-06-01
申请号：PCT/US2005012498
申请日：2005-04-12
申请人： LITEL INSTR INC , SMITH ADLAI H , HUNTER ROBERT O JR , MCARTHUR BRUCE
发明人： SMITH ADLAI H , HUNTER ROBERT O JR , MCARTHUR BRUCE
IPC分类号： G03F7/20
CPC分类号： G03F7/70133 , G03F7/70091
摘要： An in-situ apparatus for high resolution imaging in lithographic steppers and scanners (machines) is described. It comprises a multiple field in-situ imaging objective that images the source directly onto the machine reticle or objective plane (ROP). The image on the wafer side of the machine is then recorded electronically or in photo resist. Alternative embodiments create source images at locations before or beyond the wafer plane (WP) that can be more conveniently recorded with sensors embedded in the wafer stage chuck.
摘要翻译：描述了用于光刻步进机和扫描仪（机器）中的高分辨率成像的原位装置。它包括一个多场原位成像目标，将源直接映射到机器掩模版或物镜平面（ROP）上。然后以电子方式或光抗蚀剂记录机器晶圆侧的图像。替代实施例在晶片平面（WP）之前或之后的位置处创建源图像，其可以利用嵌入在晶片台卡盘中的传感器更方便地记录。

2. 发明申请

WO2007098453A2 SYSTEM AND METHODS FOR DETERMINATION OF FOCUS AND TELECENTRICITY, AMELIORATION OF METROLOGY INDUCED EFFECTS AND APPLICATION TO DETERMINATION OF PRECISION BOSSING CURVES 审中-公开
标题翻译：用于确定聚焦和电化学的系统和方法，计量诱导效应的调整和应用于精确度测定曲线的测定
公开(公告)号：WO2007098453A2
公开(公告)日：2007-08-30
申请号：PCT/US2007062449
申请日：2007-02-20
申请人： LITEL INSTR INC , SMITH ADLAI H , HUNTER ROBERT O JR
发明人： SMITH ADLAI H , HUNTER ROBERT O JR
IPC分类号： G03F7/20
CPC分类号： G03F9/7023 , G03B27/68 , G03F7/70083 , G03F7/70191 , G03F7/705 , G03F7/70633 , G03F7/70641
摘要： An apparatus and method for the simultaneous determination of focus and source boresighting error for photolithographic steppers and scanners is described. A reticle containing custom arrays of box-in-box test structures specifically designed for performing source or exit pupil division using an aperture plate is exposed onto a resist coated wafer several times. The resulting exposure patterns are measured with a conventional overlay tool. The overlay data is processed with a slope-shift algorithm for the simultaneous determination of both focus and source telecentricity as a function of field position. Additionally, methods for ameliorating metrology induced effects and methods for producing precision Bossung curves are also described. This Abstract is provided for the sole purpose of complying with the Abstract requirement rules, it shall not be used to interpret or to limit the scope or the meaning of the claims.
摘要翻译：描述了用于光刻步进机和扫描仪同时确定焦距和光源瞄准误差的装置和方法。包含专门设计用于使用孔板执行光源或出射光瞳划分的盒装盒测试结构的定制阵列的掩模版被暴露在抗蚀剂涂覆的晶片上多次。所得到的曝光图案用传统的覆盖工具测量。覆盖数据用斜率移位算法处理，用于同时确定作为场位置的函数的焦点和源远心。此外，还描述了用于改善计量学诱导效应的方法和用于产生精确Bossung曲线的方法。本摘要仅用于遵守抽象要求规则，不得用于解释或限制权利要求的范围或含义。

3. 发明申请

WO2005109106A8 APPARATUS AND PROCESS FOR DETERMINATION OF DYNAMIC LENS FIELD CURVATURE 审中-公开
标题翻译：用于确定动态镜头场景曲线的装置和方法
公开(公告)号：WO2005109106A8
公开(公告)日：2006-12-14
申请号：PCT/US2005012499
申请日：2005-04-12
申请人： LITEL INSTR INC , SMITH ADLAI H , HUNTER ROBERT O JR
发明人： SMITH ADLAI H , HUNTER ROBERT O JR
IPC分类号： G03F7/20
CPC分类号： G03F7/70483
摘要： A technique for the determination of dynamic lens field curvature uniquely associated with a photolithographic scanner is described. A series of lithographic exposures is performed on a resist coated silicon wafer using a photolithographic scanner. The lithographic exposures produce an array of focusing fiducials that are displaced relative to each other in a unique way. The resulting measurements are fed into a computer algorithm that determines the dynamic lens field curvature (ZDLC) perpendicular to the scanning direction in an absolute sense. Furthermore, the effects of wafer flatness, wafer surface non-uniformity, and stage error are considered. The ZDLC information can be used to improve lithographic modeling, overlay modeling, and advanced process control techniques related to scanner stage dynamics.
摘要翻译：描述了用于确定与光刻扫描仪唯一相关联的动态透镜场曲率的技术。使用光刻扫描仪在抗蚀剂涂覆的硅晶片上进行一系列光刻曝光。光刻曝光产生了以独特的方式相对于彼此移位的聚焦基准阵列。所得到的测量被馈送到绝对意义上决定垂直于扫描方向的动态透镜场曲率（ZDLC）的计算机算法。此外，考虑了晶片平坦度，晶片表面不均匀性和阶段误差的影响。 ZDLC信息可用于改进与扫描仪阶段动力学相关的光刻建模，叠加建模和高级过程控制技术。

4. 发明申请

WO2005106593A3 METHOD AND APPARATUS FOR MEASUREMENT OF EXIT PUPIL TRANSMITTANCE 审中-公开
标题翻译：测量出口传感器的方法和装置
公开(公告)号：WO2005106593A3
公开(公告)日：2006-04-13
申请号：PCT/US2005012519
申请日：2005-04-13
申请人： LITEL INSTR INC , SMITH ADLAI H , HUNTER ROBERT O JR
发明人： SMITH ADLAI H , HUNTER ROBERT O JR
IPC分类号： G03F7/20 , G01B9/00 , G02B27/09
CPC分类号： G03F7/70941 , G02B27/0927 , G02B27/0944 , G03F7/70091 , G03F7/70158 , G03F7/70566 , G03F7/70591
摘要： A method and apparatus for determining the state of the lens transmittance of an optical projection system are described. A lens or imaging objective transmission is determined as a function of exit pupil transverse direction cosine (nx,ny) at multiple field points thereby providing a more complete analysis and correction of a photolithographic exposure system. The entrance pupil of a projection imaging system is uniformly illuminated and the angular dependence of transmission through the imaging system as a function of exit pupil direction cosines is determined. The illumination source includes a light conditioner with an in-situ illumination structure (ISIS), which is an optical structure that can provide uniform illumination of the system's entrance pupil.
摘要翻译：描述了用于确定光学投影系统的透镜透射率的状态的方法和装置。作为多个场点处的出射光瞳横向余弦（nx，ny）的函数，确定透镜或成像物镜透射，从而提供对光刻曝光系统的更完整的分析和校正。投影成像系统的入射光瞳被均匀地照射，并且确定作为出射光瞳方向余弦的函数的通过成像系统的透射的角度依赖性。照明源包括具有原位照明结构（ISIS）的光调节器，其是可以提供系统的入射光瞳的均匀照明的光学结构。

5. 发明申请

WO2005109105A3 APPARATUS AND PROCESS FOR DETERMINATION OF DYNAMIC SCAN FIELD CURVATURE 审中-公开
标题翻译：用于确定动态扫描场曲线的装置和方法
公开(公告)号：WO2005109105A3
公开(公告)日：2006-06-22
申请号：PCT/US2005012496
申请日：2005-04-12
申请人： LITEL INSTR INC , SMITH ADLAI H , HUNTER ROBERT O JR
发明人： SMITH ADLAI H , HUNTER ROBERT O JR
IPC分类号： G03F7/20
CPC分类号： G03F7/70791 , G03F7/70358 , G03F7/70516 , G03F7/706 , G03F7/70641
摘要： A process for the determination of focal plane deviation uniquely due to the scanning dynamics associated with a photolithographic scanner is described. A series of lithographic exposures is performed on a resist coated silicon wafer using a photolithographic scanner. The lithographic exposures produce an array of focusing fiducials that are displaced relative to each other in a unique way. The resulting measurements are fed into a computer algorithm that calculates the dynamic scanning field curvature in an absolute sense in the presence of wafer height variation and other wafer/reticle stage irregularities. The dynamic scan field curvature can be used to improve lithographic modeling, overlay modeling, and advanced process control techniques related to scanner stage dynamics.
摘要翻译：描述了由于与光刻扫描仪相关的扫描动力学而唯一地确定焦平面偏差的过程。使用光刻扫描仪在抗蚀剂涂覆的硅晶片上进行一系列光刻曝光。光刻曝光产生了以独特的方式相对于彼此移位的聚焦基准阵列。所得到的测量值被馈送到计算机算法中，该计算机算法在存在晶片高度变化和其它晶片/标线片级不规则性的情况下以绝对意义计算动态扫描场曲率。动态扫描场曲率可用于改进与扫描仪动态相关的光刻建模，叠加建模和先进的过程控制技术。

6. 发明申请

WO2005103819A3 METHOD OF EMULATION OF LITHOGRAPHIC PROJECTION TOOLS 审中-公开
标题翻译：光刻投影工具的仿真方法
公开(公告)号：WO2005103819A3
公开(公告)日：2006-02-02
申请号：PCT/US2005013403
申请日：2005-04-20
申请人： LITEL INSTR INC , SMITH ADLAI H , HUNTER ROBERT O JR , BENDIK JOSEPH
发明人： SMITH ADLAI H , HUNTER ROBERT O JR , BENDIK JOSEPH
IPC分类号： G03F7/20 , G03F20060101 , G06F17/50 , G06G7/62
CPC分类号： G03F7/705 , G06F17/5009 , G06F2217/10 , G06F2217/86
摘要： Techniques for producing emulations of lithographic tools and processes using virtual wafers and lithographic libraries are described. Emulating a lithographic projection imaging machine includes determining characteristics of the imaging machine, of a reticle used in the imaging machine, and of layer specific processes. Then performing emulation on a virtual wafer using the characteristics of the imaging machine, reticle, and layer specific processes. The machine characteristics determined include characteristics of an exposure source, lens aberration, exit pupil, mechanics, vibration, calibration offsets, or resist. The reticle characteristics determined include distortion, critical dimension, phase transmission error, mask clips, as drawn specifications, or mask sites. And, the layer specific process characteristics include machine model, machine setting identification, and field exposure sequencing. Emulation results can be entered into an optimizer and optimum operating conditions related to the projection imaging machine are determined.
摘要翻译：描述了用于生产使用虚拟晶片和光刻库的光刻工具和工艺仿真的技术。仿真光刻投影成像机包括确定成像机的特征，成像机中使用的掩模版和特定于层的工艺。然后使用成像机，掩模版和层特定工艺的特性在虚拟晶片上进行仿真。所确定的机器特性包括曝光源的特性，透镜像差，出射光瞳，力学，振动，校准偏移或抗蚀剂。确定的掩模版特性包括失真，临界尺寸，相位传输误差，掩模夹，绘图规范或掩模位置。而且，层的具体过程特征包括机器模型，机器设置识别和现场曝光测序。可以将仿真结果输入到优化器中，并且确定与投影成像机相关的最佳操作条件。

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