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1. 发明申请

WO2010125484A1 REMOTE WAVELENGTH CONVERTING MATERIAL CONFIGURATION FOR LIGHTING 审中-公开
标题翻译：远程波长转换材料配置
公开(公告)号：WO2010125484A1
公开(公告)日：2010-11-04
申请号：PCT/IB2010/051527
申请日：2010-04-08
申请人： PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , SHCHEKIN, Oleg B. , BIERHUIZEN, Serge J.
发明人： SHCHEKIN, Oleg B. , BIERHUIZEN, Serge J.
IPC分类号： F21V8/00
CPC分类号： G02B6/0055 , G02B6/0035 , G02B6/0068 , G02B6/0073 , H01L33/60
摘要： A device includes a reflector and a wavelength converting material disposed on the reflector. A backlight is disposed between the reflector and a surface to be illuminated, such as a liquid crystal display panel. The backlight includes a light source and a waveguide. The waveguide is configured to direct a majority of light from the light source toward the reflector. At least a portion of the light is converted by the wavelength converted material, reflected by the reflector, and incident on the surface to be illuminated.
摘要翻译：一种装置包括反射器和布置在反射器上的波长转换材料。背光源配置在反射体和被照射面之间，如液晶显示面板。背光包括光源和波导。波导被配置为将来自光源的大部分光引向反射器。光的至少一部分被波长转换的材料转换，被反射体反射并入射到被照射的表面上。

2. 发明申请

WO2008023355A2 THIN BACKLIGHT WITH FLIPPED LIGHT EMITTING DIODE 审中-公开
标题翻译：带背光灯的轻型背光
公开(公告)号：WO2008023355A2
公开(公告)日：2008-02-28
申请号：PCT/IB2007053401
申请日：2007-08-24
申请人： KONINKL PHILIPS ELECTRONICS NV , PHILIPS CORP , PHILIPS LUMILEDS LIGHTING CO , HARBERS GERARD , SHCHEKIN OLEG B , BIERHUIZEN SERGE
发明人： HARBERS GERARD , SHCHEKIN OLEG B , BIERHUIZEN SERGE
CPC分类号： G02B6/0073 , G02B6/0021 , G02B6/0031 , G02B6/0083 , G02B6/0091 , G02F1/133615
摘要： One or more LEDs are mounted within an LCD without the use of any printed circuit board (PCB), thus reducing the thickness of the LCD by about the thickness of the conventional PCB. In one embodiment, the LED and submount are mounted so that the submount is opposing the liquid crystal layer side of the LCD, so that the liquid crystal layers provide the mechanical support for the submount and LED die. The LED die (mounted on the submount) may be inserted into a cavity formed in the "top" surface of the light guide, and the top surface of the light guide is abutted against the liquid crystal layers. In such a configuration, the LED light source, including all supporting components, adds no thickness to the LCD. In another embodiment, on the "bottom" surface of the LCD opposing the LED die is an electrically switchable mirror that is either reflective or transparent. In its transparent state, the LED in the LCD may be used as a flash in a cell phone camera, while the LCD may be viewed to take the picture.
摘要翻译：一个或多个LED安装在LCD中，而不需要使用任何印刷电路板（PCB），从而将LCD的厚度减小约传统PCB的厚度。在一个实施例中，安装LED和基座，使得底座与LCD的液晶层侧相对，使得液晶层为子安装座和LED管芯提供机械支撑。 LED模具（安装在基座上）可以插入到形成在导光体的“顶部”表面中的空腔中，并且导光体的顶表面与液晶层抵接。在这种构造中，包括所有支撑部件的LED光源不向LCD增加厚度。在另一个实施例中，在与LED管芯相对的LCD的“底部”表面上是可反射或透明的电可开关镜。在其透明状态下，LCD中的LED可以用作手机相机中的闪光灯，而可以将LCD看作拍摄照片。

3. 发明申请

WO2017023502A1 SEMICONDUCTOR LIGHT EMITTING DEVICE WITH REFLECTIVE SIDE COATING 审中-公开
标题翻译：具有反射涂层的半导体发光器件
公开(公告)号：WO2017023502A1
公开(公告)日：2017-02-09
申请号：PCT/US2016/042025
申请日：2016-07-13
申请人： KONINKLIJKE PHILIPS N.V. , MASUI, Hisashi , SHCHEKIN, Oleg B. , SHIMIZU, Ken , KOSOWSKY, Les , DAVIS, Ken
发明人： MASUI, Hisashi , SHCHEKIN, Oleg B. , SHIMIZU, Ken , KOSOWSKY, Les , DAVIS, Ken
IPC分类号： H01L33/46 , H01L33/00 , H01L33/20 , H01L33/44 , H01L33/48 , H01L33/50 , H01L33/54
CPC分类号： H01L33/46 , H01L33/0095 , H01L33/20 , H01L33/486 , H01L33/505 , H01L33/56 , H01L2933/0025
摘要： A semiconductor light emitting device (100;200;300;400,400B,400C;500;600;700) may have a reflective side coating (120;220;320;420;520;620;720) disposed on a sidewall (118;215;315;415,435;515) of a semiconductor light emitting device structure. Such a device may be fabricated by dicing a semiconductor structure to separate a semiconductor light emitting device structure and then forming a reflective side coating (120;220;320;420;520;620;720) on a sidewall (118;215;315;415,435;515) of the separated semiconductor light emitting device structure.
摘要翻译：半导体发光器件（100; 200; 300; 400,400B，400C; 500; 600; 700）可以具有设置在侧壁（118）上的反射侧涂层（120; 220; 320; 420; 520; ; 215; 315; 415,435; 515）的半导体发光器件结构。这种器件可以通过切割半导体结构以分离半导体发光器件结构然后在侧壁（118; 215; 315）上形成反射侧涂层（120; 220; 320; 420; 520; 620; 720） ; 415,435; 515）的分离的半导体发光器件结构。

4. 发明申请

WO2011010237A1 REDUCED COLOR OVER ANGLE VARIATION LEDS 审中-公开
标题翻译：减少颜色超过角度变化的LED
公开(公告)号：WO2011010237A1
公开(公告)日：2011-01-27
申请号：PCT/IB2010/052897
申请日：2010-06-24
申请人： PHILIPS LUMILEDS LIGHTING COMPANY, LLC , KONINKLIJKE PHILIPS ELECTRONICS N.V. , BIERHUIZEN, Serge, J. , SHCHEKIN, Oleg B.
发明人： BIERHUIZEN, Serge, J. , SHCHEKIN, Oleg B.
IPC分类号： H01L33/50 , H01L33/58
CPC分类号： H01L33/508 , H01L33/58 , H01L2924/0002 , H01L2933/0041 , H01L2933/0058 , H01L2924/00
摘要： A light emitting diode (LED) package (300) includes an LED die includes a stack of semiconductor layers including an active region, and a wavelength converting element over the LED die. The wavelength converting element includes two or more non-flat surfaces that produce a desired angular color distribution pattern.
摘要翻译：发光二极管（LED）封装（300）包括LED管芯，其包括包括有源区的半导体层堆叠以及位于LED管芯上的波长转换元件。波长转换元件包括产生期望的角色分布图案的两个或多个非平坦表面。

5. 发明申请

WO2004064207A2 TEMPERATURE INSENSITIVE QUANTUM DOT LASERS AND PHOTONIC GAIN DEVICES HAVING PROXIMITY-PLACED ACCEPTOR IMPURITIES, AND METHODS THEREFOR 审中-公开
标题翻译：温度敏感量子点激光器和具有接近接收机器质量的光子增益器件及其方法
公开(公告)号：WO2004064207A2
公开(公告)日：2004-07-29
申请号：PCT/US2004/000178
申请日：2004-01-06
申请人： UNIVERSITY OF TEXAS , DEPPE, Dennis, G. , SHCHEKIN, Oleg, B.
发明人： DEPPE, Dennis, G. , SHCHEKIN, Oleg, B.
IPC分类号： H01S
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/127 , H01S5/06226 , H01S5/1039 , H01S5/22 , H01S5/2231 , H01S5/3086 , H01S5/3407 , H01S5/341 , H01S5/3412
摘要： Solid state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region forming a quantum dot heterostructure having a plurality of quantum dot layers each having discrete quantum hole states and a p-type impurity layer formed proximate to at least one of the quantum dot layers to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve T o and other performance characteristics of quantum dot devices.
摘要翻译：使用用于光子或电子特性的半导体量子点的固态光电子和电子器件包括形成具有多个量子点层的量子点异质结构的半导体有源区，每个量子点层具有离散的量子阱状态和邻近形成的p型杂质层到至少一个量子点层以提供过量的平衡空穴电荷以占据至少一些离散的量子阱状态，以改善量子点器件的To和其他性能特征。

6. 发明申请

WO2017062119A1 FLIP-CHIP SMT LEDs WITH VARIABLE NUMBER OF EMITTING SURFACES 审中-公开
标题翻译：具有可变数量的发射表面的FLIP-CHIP SMT LED
公开(公告)号：WO2017062119A1
公开(公告)日：2017-04-13
申请号：PCT/US2016/050071
申请日：2016-09-02
申请人： KONINKLIJKE PHILIPS N.V. , DIANA, Frederic S. , FANCSALI, Erno , DE SMET, Thierry , GUTH, Gregory , MARTYNOV, Yourii , SHCHEKIN, Oleg B. , BHARDWAJ, Jyoti
发明人： DIANA, Frederic S. , FANCSALI, Erno , DE SMET, Thierry , GUTH, Gregory , MARTYNOV, Yourii , SHCHEKIN, Oleg B. , BHARDWAJ, Jyoti
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L33/486 , H01L33/58 , H01L2933/0058
摘要： A method to make light-emitting diode (LED) units include arranging LEDs in a pattern, forming an optically transparent spacer layer over the LEDs, forming an optically reflective layer over the LEDs, and singulating the LEDs into LED units. The method may further include, after forming the optically transparent spacer layer and before singulating the LEDs, forming a secondary light-emitting layer that conforms to the LEDs, cutting the LEDs to form LED groups having a same arrangement, spacing the LED groups on a support, and forming the optically reflective layer in spaces between the LED groups.
摘要翻译：制造发光二极管（LED）单元的方法包括以图案布置LED，在LED上形成光学透明的间隔层，在LED上形成光反射层，并将LED分成LED单元。该方法可以进一步包括在形成光学透明间隔层之后并且在分离LED之前，形成符合LED的次级发光层，切割LED以形成具有相同布置的LED组，支撑并在LED组之间的空间中形成光学反射层。

7. 发明申请

WO2011138693A1 LIGHT EMITTING DEVICE GROWN ON WAVELENGTH CONVERTING SUBSTRATE 审中-公开
标题翻译：在波长转换衬底上形成的发光器件
公开(公告)号：WO2011138693A1
公开(公告)日：2011-11-10
申请号：PCT/IB2011/051530
申请日：2011-04-08
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS LUMILEDS LIGHTING COMPANY LLC , GARDNER, Nathan, F. , DAVID, Aurelien, J., F. , SHCHEKIN, Oleg, B.
发明人： GARDNER, Nathan, F. , DAVID, Aurelien, J., F. , SHCHEKIN, Oleg, B.
IPC分类号： H01L33/00 , H01L33/50 , H01L33/22
CPC分类号： H01L33/50 , H01L33/007 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： In some embodiments of the invention, a device includes a substrate and a semiconductor structure. The substrate includes a wavelength converting element (30) comprising a wavelength converting material disposed in a transparent material, a seed layer (34) comprising a material on which Ill -nitride material will nucleate, and a bonding (32) layer disposed between the wavelength converting element and the seed layer. The semiconductor structure includes a Ill -nitride light emitting layer disposed between an n-type region and a p-type region, and is grown on the seed layer.
摘要翻译：在本发明的一些实施例中，器件包括衬底和半导体结构。衬底包括波长转换元件（30），其包括设置在透明材料中的波长转换材料，种子层（34），其包含氮化钛材料将成核的材料;以及接合（32）层，其设置在波长转换元素和种子层。半导体结构包括设置在n型区域和p型区域之间的氮化硅发光层，并且在籽晶层上生长。

8. 发明申请

WO2011033403A1 WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
标题翻译：波长转换半导体发光器件
公开(公告)号：WO2011033403A1
公开(公告)日：2011-03-24
申请号：PCT/IB2010/053668
申请日：2010-08-13
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , PHILIPS LUMILEDS LIGHTING COMPANY, LLC , SHCHEKIN, Oleg, B.
发明人： SHCHEKIN, Oleg, B.
IPC分类号： H01L33/02 , H01L33/40 , H01L33/50
CPC分类号： H01L33/02 , H01L33/22 , H01L33/405 , H01L33/505 , H01L2933/0083
摘要： A light emitting diode includes a semiconductor structure (10) comprising a light emitting layer (22) disposed between an n-type region (20) and a p-type region (24), and n- and p-contacts (26,28) disposed on the n- and p-type regions. The light emitting layer is configured to emit light of a first peak wavelength. A wavelength converting material (36) is positioned in a path of light emitted by the light emitting layer. The wavelength converting material is configured to absorb light of the first peak wavelength and emit light of a second peak wavelength. The light emitting diode is configured such that a light emission pattern from the light emitting diode matches a light emission pattern from the wavelength converting material.
摘要翻译：发光二极管包括：半导体结构（10），包括设置在n型区域（20）和p型区域（24）之间的发光层（22），以及n-和p-触点（26,28 ）设置在n型和p型区域上。发光层被配置为发射第一峰值波长的光。波长转换材料（36）位于由发光层发射的光的路径中。波长转换材料被配置为吸收第一峰值波长的光并发射第二峰值波长的光。发光二极管被配置为使得来自发光二极管的发光图案与来自波长转换材料的发光图案匹配。

9. 发明申请

WO2008023355A3 THIN BACKLIGHT WITH FLIPPED LIGHT EMITTING DIODE 审中-公开
公开(公告)号：WO2008023355A3
公开(公告)日：2008-02-28
申请号：PCT/IB2007/053401
申请日：2007-08-24
申请人： KONINKLIJKE PHILIPS ELECTRONICS, N.V. , U.S. PHILIPS CORPORATION , PHILIPS LUMILEDS LIGHTING COMPANY, LLC , HARBERS, Gerard , SHCHEKIN, Oleg B. , BIERHUIZEN, Serge
发明人： HARBERS, Gerard , SHCHEKIN, Oleg B. , BIERHUIZEN, Serge
IPC分类号： G02B6/00
摘要： One or more LEDs are mounted within an LCD without the use of any printed circuit board (PCB), thus reducing the thickness of the LCD by about the thickness of the conventional PCB. In one embodiment, the LED and submount are mounted so that the submount is opposing the liquid crystal layer side of the LCD, so that the liquid crystal layers provide the mechanical support for the submount and LED die. The LED die (mounted on the submount) may be inserted into a cavity formed in the "top" surface of the light guide, and the top surface of the light guide is abutted against the liquid crystal layers. In such a configuration, the LED light source, including all supporting components, adds no thickness to the LCD. In another embodiment, on the "bottom" surface of the LCD opposing the LED die is an electrically switchable mirror that is either reflective or transparent. In its transparent state, the LED in the LCD may be used as a flash in a cell phone camera, while the LCD may be viewed to take the picture.

10. 发明申请

WO2004064207A3 QUANTUM DOT DEVICES HAVING PROXIMITY-PLACED ACCEPTOR IMPURITIES 审中-公开
标题翻译：具有接近接受限制的量子设备
公开(公告)号：WO2004064207A3
公开(公告)日：2005-11-17
申请号：PCT/US2004000178
申请日：2004-01-06
申请人： UNIV TEXAS , DEPPE DENNIS G , SHCHEKIN OLEG B
发明人： DEPPE DENNIS G , SHCHEKIN OLEG B
IPC分类号： H01L29/06 , H01L29/12 , H01S20060101 , H01S1/00 , H01S5/00 , H01S5/10 , H01S5/22 , H01S5/223 , H01S5/30 , H01S5/34 , H04B10/12
CPC分类号： B82Y20/00 , B82Y10/00 , H01L29/127 , H01S5/06226 , H01S5/1039 , H01S5/22 , H01S5/2231 , H01S5/3086 , H01S5/3407 , H01S5/341 , H01S5/3412
摘要： Solid state optoelectronic and electronic devices that use semiconductor quantum dots for manipulation of photonic or electronic properties include a semiconductor active region (215) forming a quantum dot heterostructure (fig. 2b) having a plurality of quantum dot layers (240) each having discrete quantum hole states and a p-type impurity layer (245) formed proximate to at least one of the quantum dot layers (240) to provide excess equilibrium hole charge to occupy at least some of the discrete quantum hole states to improve To and other performance characteristics of quantum dot devices.
摘要翻译：使用半导体量子点来处理光子或电子特性的固态光电子和电子器件包括形成量子点异质结构的半导体有源区（215），其具有多个量子点层（240），每个量子点层具有离散的量子空穴状态和靠近至少一个量子点层（240）形成的p型杂质层（245），以提供过量的平衡空穴电荷以占据至少一些离散的量子阱状态以改善To和其他性能特征的量子点设备。

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