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1. 发明申请

WO2004078925A8 METHODS AND COMPOSITIONS FOR TREATING AND PREVENTING NEURODEGENERATIVE DISEASES 审中-公开
标题翻译：治疗和预防神经退行性疾病的方法和组合物
公开(公告)号：WO2004078925A8
公开(公告)日：2005-03-03
申请号：PCT/US2004005925
申请日：2004-02-27
申请人： IRM LLC , SHAH KAVITA , VINCENT FABIEN
发明人： SHAH KAVITA , VINCENT FABIEN
IPC分类号： A01K67/00 , A01K67/033 , A01N37/18 , A01N61/00 , A61K31/00 , A61K38/00 , C12N20060101 , G01N33/50 , G01N33/53 , G01N33/543 , G01N33/566 , G01N33/567 , C12N
CPC分类号： G01N33/5041 , C12N9/1205 , G01N33/5058 , G01N2800/28
摘要： Methods and compositions for treating and preventing neurodegenerative diseases. A number of p25/CDK5 substrates were identified, thereby providing a mechanism of p25/CDK5-induced neurodegenerative disease.
摘要翻译：治疗和预防神经退行性疾病的方法和组合物。鉴定了许多p25 / CDK5底物，从而提供了p25 / CDK5诱导的神经退行性疾病的机制。

2. 发明申请

WO2004078925A2 METHODS AND COMPOSITIONS FOR TREATING AND PREVENTING NEURODEGENERATIVE DISEASES 审中-公开
标题翻译：用于治疗和预防神经损伤性疾病的方法和组合物
公开(公告)号：WO2004078925A2
公开(公告)日：2004-09-16
申请号：PCT/US2004/005925
申请日：2004-02-27
申请人： IRM LLC , SHAH, Kavita , VINCENT, Fabien
发明人： SHAH, Kavita , VINCENT, Fabien
IPC分类号： C12N
CPC分类号： G01N33/5041 , C12N9/1205 , G01N33/5058 , G01N2800/28
摘要： Methods and compositions for treating and preventing neurodegenerative diseases. A number of p25/CDK5 substrates were identified, thereby providing a mechanism of p25/CDK5-induced neurodegenerative disease.
摘要翻译：用于治疗和预防神经变性疾病的方法和组合物。鉴定出许多p25 / CDK5底物，从而提供p25 / CDK5诱导的神经变性疾病的机制。

3. 发明申请

WO2004024082A3 HIGHLY SPECIFIC MODULATORS OF GTPASES FOR TARGET VALIDATION 审中-公开
标题翻译：用于目标验证的高特异性调制器
公开(公告)号：WO2004024082A3
公开(公告)日：2009-06-18
申请号：PCT/US0328594
申请日：2003-09-10
申请人： IRM LLC , NOVARTIS AG , SHAH KAVITA , VINCENT FABIEN , CUETO MARIA A
发明人： SHAH KAVITA , VINCENT FABIEN , CUETO MARIA A
IPC分类号： A01N43/04 , A61K31/70 , A61K48/00 , C07H21/04 , C12Q1/68
CPC分类号： C07H21/04
摘要： This invention provides methods and compositions related to modified GTPase sequences and GTPase modulators.
摘要翻译：本发明提供了与修饰的GTPase序列和GTPase调节剂相关的方法和组合物。

4. 发明申请

WO2004024082A2 HIGHLY SPECIFIC MODULATORS OF GTPASES FOR TARGET VALIDATION 审中-公开
标题翻译：用于目标验证的高特异性调制器
公开(公告)号：WO2004024082A2
公开(公告)日：2004-03-25
申请号：PCT/US2003/028594
申请日：2003-09-10
申请人： IRM, LLC , NOVARTIS PHARMACEUTICALS CORPORATION , SHAH, Kavita , VINCENT, Fabien , CUENTO, Maria, A.
发明人： SHAH, Kavita , VINCENT, Fabien , CUENTO, Maria, A.
IPC分类号： A61K
CPC分类号： C07H21/04
摘要： This invention provides methods and compositions related to modified GTPase sequences and GTPase modulators.
摘要翻译：本发明提供了与修饰的GTPase序列和GTPase调节剂相关的方法和组合物。

5. 发明申请

WO2007142690A2 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：WO2007142690A2
公开(公告)日：2007-12-13
申请号：PCT/US2006/060559
申请日：2006-11-06
申请人： APPLIED MATERIALS, INC. , MA, Paul , SHAH, Kavita , WU, Dien-yeh , GANGULI, Seshadri , MARCADAL, Christophe , WU, Frederick, C. , CHU, Schubert, S.
发明人： MA, Paul , SHAH, Kavita , WU, Dien-yeh , GANGULI, Seshadri , MARCADAL, Christophe , WU, Frederick, C. , CHU, Schubert, S.
IPC分类号： C23C16/00
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a process chamber is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber comprises components that are capable of being electrically insulated, electrically grounded or RF energized. In one example, a chamber body and a gas manifold assembly are grounded and separated by electrically insulated components, such as an insulation cap, a plasma screen insert and an isolation ring. A showerhead, a plasma baffle and a water box are positioned between the insulated components and become RF hot when activated by a plasma generator. Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber.
摘要翻译：本发明的实施例提供一种被配置为在诸如等离子体增强型ALD（PE-ALD）工艺的原子层沉积（ALD）工艺期间形成材料的装置。在一个实施例中，处理室被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。处理室包括能够被电绝缘，电接地或RF通电的部件。在一个示例中，室主体和气体歧管组件由诸如绝缘盖，等离子体屏幕插件和隔离环之类的电绝缘部件接地并分离。一个喷头，等离子体挡板和水箱位于绝缘部件之间，当被等离子体发生器激活时变为RF热。本发明的其它实施例提供沉积工艺以在处理室内形成材料层。

6. 发明申请

WO2004078925A3 METHODS AND COMPOSITIONS FOR TREATING AND PREVENTING NEURODEGENERATIVE DISEASES 审中-公开
标题翻译：用于治疗和预防神经损伤性疾病的方法和组合物
公开(公告)号：WO2004078925A3
公开(公告)日：2005-09-09
申请号：PCT/US2004005925
申请日：2004-02-27
申请人： IRM LLC , SHAH KAVITA , VINCENT FABIEN
发明人： SHAH KAVITA , VINCENT FABIEN
IPC分类号： A01K67/00 , A01K67/033 , A01N37/18 , A01N61/00 , A61K31/00 , A61K38/00 , C12N20060101 , G01N33/50 , G01N33/53 , G01N33/543 , G01N33/566 , G01N33/567
CPC分类号： G01N33/5041 , C12N9/1205 , G01N33/5058 , G01N2800/28
摘要： Methods and compositions for treating and preventing neurodegenerative diseases. A number of p25/CDK5 substrates were identified, thereby providing a mechanism of p25/CDK5-induced neurodegenerative disease.
摘要翻译：用于治疗和预防神经变性疾病的方法和组合物。鉴定出许多p25 / CDK5底物，从而提供p25 / CDK5诱导的神经变性疾病的机制。

7. 发明申请

WO2005012577A1 METHODS AND COMPOSITIONS FOR MODULATING CELL PROLIFERATION 审中-公开
标题翻译：调节细胞增殖的方法和组合物
公开(公告)号：WO2005012577A1
公开(公告)日：2005-02-10
申请号：PCT/US2004/024944
申请日：2004-07-30
申请人： IRM LLC , SHAH, Kavita , KIM, Sungjoon
发明人： SHAH, Kavita , KIM, Sungjoon
IPC分类号： C12Q1/68
CPC分类号： C12Q1/48 , C12Q1/485 , G01N2333/91028 , G01N2500/04
摘要： This invention provides methods for identifying novel SHMT modulators. The methods comprise first screening test agents for modulators of p38 activity and then further screening the identified modulating agents for modulators of SHMT enzyme activity. The invention further provides methods and pharmaceutical compositions for modulating cellular proliferation and for treating tumors using the novel SHMT modulators.
摘要翻译：本发明提供鉴定新型SHMT调节剂的方法。所述方法包括首先筛选p38活性调节剂的测试剂，然后进一步筛选鉴定的调节剂用于SHMT酶活性的调节剂。本发明还提供了使用新型SHMT调节剂调节细胞增殖和治疗肿瘤的方法和药物组合物。

8. 发明申请

WO2012068232A1 AURORA A KINASE EFFECTORS 审中-公开
公开(公告)号：WO2012068232A1
公开(公告)日：2012-05-24
申请号：PCT/US2011/060960
申请日：2011-11-16
申请人： PURDUE RESEARCH FOUNDATION , SHAH, Kavita
发明人： SHAH, Kavita
IPC分类号： C12Q1/68
CPC分类号： C12Q1/485 , G01N33/57415 , G01N33/57434 , G01N2800/52
摘要： Two proteins (PHLDA1 and LIMK2) have been identified as direct targets of Aurora A kinase activity. PHLDA1 downregulation and Aurora A upregulation are strong predictors of poor prognosis for breast cancer patients. In accordance with one embodiment a method of detecting, prognosing and monitoring the presence/progression of cancer, and more specifically breast or prostate cancer, is provided. In one embodiment the method comprises the step of analyzing a biological sample from a patient to detect and/or quantitate the presence of Aurora A, PHLDA1 or LIMK2 amino acid sequences. In one embodiment a method of treating cancer is provided comprising the administration of therapies that enhance the activity of PHLDA1 and/or decrease the activity of LIMK2.
摘要翻译：已经鉴定出两种蛋白质（PHLDA1和LIMK2）是Aurora A激酶活性的直接靶标。 PHLDA1下调和Aurora A上调是对乳腺癌患者预后不良的强烈预测因素。根据一个实施方案，提供了检测，预测和监测癌症的存在/进展，更具体地说是乳腺癌或前列腺癌的方法。在一个实施方案中，该方法包括分析来自患者的生物样品以检测和/或定量Aurora A，PHLDA1或LIMK2氨基酸序列的存在的步骤。在一个实施方案中，提供了治疗癌症的方法，其包括施用增强PHLDA1活性和/或降低LIMK2活性的治疗。

9. 发明申请

WO2007142690A3 APPARATUS AND PROCESS FOR PLASMA-ENHANCED ATOMIC LAYER DEPOSITION 审中-公开
标题翻译：等离子体增强原子层沉积的装置和方法
公开(公告)号：WO2007142690A3
公开(公告)日：2008-12-24
申请号：PCT/US2006060559
申请日：2006-11-06
申请人： APPLIED MATERIALS INC , MA PAUL , SHAH KAVITA , WU DIEN-YEH , GANGULI SESHADRI , MARCADAL CHRISTOPHE , WU FREDERICK C , CHU SCHUBERT S
发明人： MA PAUL , SHAH KAVITA , WU DIEN-YEH , GANGULI SESHADRI , MARCADAL CHRISTOPHE , WU FREDERICK C , CHU SCHUBERT S
IPC分类号： C23F1/00 , C23C16/22 , C23C16/26 , C23C16/44 , C23C16/50 , H01L21/306
CPC分类号： C23C16/45544 , C23C16/18 , C23C16/45536 , C23C16/45542 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/509 , C23C16/5096 , H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32522 , H01J37/32623 , H01J37/32633 , H01L21/28562 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE- ALD) process. In one embodiment, a process chamber (50) is configured to expose a substrate to a sequence of gases and plasmas during a PE-ALD process. The process chamber (50) comprises components that are capable of being electrically insulated, electrically grounded or RP energized. In one example, a chamber (50) body and a gas manifold (800) assembly are grounded and separated by electrically insulated components, such as an insulation cap (700), a plasma screen insert (600) and an isolation ring (200). A showerhead (300), a plasma baffle (500) and a water box (400) are positioned between the insulated components and become RF hot when activated by a plasma generator (92). Other embodiments of the invention provide deposition processes to form layers of materials within the process chamber (50).
摘要翻译：本发明的实施例提供一种被配置为在原子层沉积（ALD）工艺（诸如等离子体增强型ALD（PE-ALD））工艺中形成材料的装置。在一个实施例中，处理室（50）被配置为在PE-ALD过程期间将衬底暴露于一系列气体和等离子体。处理室（50）包括能够被电绝缘，电接地或RP通电的部件。在一个示例中，腔室（50）主体和气体歧管（800）组件由诸如绝缘帽（700），等离子体屏幕插入件（600）和隔离环（200）的电绝缘部件接地并分离，。喷头（300），等离子体挡板（500）和水箱（400）位于绝缘部件之间，并且当被等离子体发生器（92）激活时变为RF热。本发明的其它实施例提供沉积工艺以在处理室（50）内形成材料层。

10. 发明申请

WO2005098938A1 RUTHENIUM LAYER FORMATION FOR COPPER FILM DEPOSITION 审中-公开
标题翻译：铜箔沉积物的形成层
公开(公告)号：WO2005098938A1
公开(公告)日：2005-10-20
申请号：PCT/US2005/010203
申请日：2005-03-24
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , SHAH, Kavita , MAITY, Nirmaya , CHANG, Mei
发明人： GANGULI, Seshadri , SHAH, Kavita , MAITY, Nirmaya , CHANG, Mei
IPC分类号： H01L21/768
CPC分类号： C23C16/45553 , C23C16/18 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/76873 , H01L21/76874
摘要： A method of ruthenium layer formation for interconnect features containing high aspect ratios is described. The ruthenium layer is formed using a cyclical deposition process. Embodiments of the invention generally provide a method of forming a film on a substrate surface that includes positioning a substrate within a process chamber, forming a first layer on the substrate surface by exposing the substrate to a ruthenium-containing compound. The method further includes purging the process chamber with a purge gas, exposing a reagent to the first layer containing the ruthenium-containing compound to form a ruthenium-containing layer on the substrate and purging the process chamber with the purge gas. The ruthenium-containing compound may be selected from bis(dialkylpentadienyl)ruthenium compounds, bis(alkylpentadienyl) ruthenium compounds, bis(pentadienyl)ruthenium compounds, derivatives thereof or combinations thereof.
摘要翻译：描述了包含高纵横比的互连特征的钌层形成方法。使用循环沉积工艺形成钌层。本发明的实施方案通常提供了在衬底表面上形成膜的方法，其包括将衬底定位在处理室内，通过将衬底暴露于含钌化合物在衬底表面上形成第一层。该方法还包括用吹扫气体吹扫处理室，将试剂暴露于含有含钌化合物的第一层，以在衬底上形成含钌层，并用净化气体吹扫处理室。含钌化合物可以选自双（二烷基戊二烯基）钌化合物，双（烷基戊二烯基）钌化合物，双（戊二烯基）钌化合物，其衍生物或其组合。

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