基本信息:
- 专利标题： METHOD AND APPARATUS FOR SELECTIVE NITRIDATION PROCESS
- 专利标题（中）：选择性硝化过程的方法和装置
- 申请号：PCT/US2012/045046 申请日：2012-06-29
- 公开(公告)号：WO2013022530A1 公开(公告)日：2013-02-14
- 发明人： ROGERS, Matthew S. , CURTIS, Roger , HAWRYLCHAK, Lara , LAI, Ken Kaung , HWANG, Bernard L. , TOBIN, Jeffrey , OLSEN, Christopher S. , BEVAN, Malcolm J.
- 申请人： APPLIED MATERIALS, INC. , ROGERS, Matthew S. , CURTIS, Roger , HAWRYLCHAK, Lara , LAI, Ken Kaung , HWANG, Bernard L. , TOBIN, Jeffrey , OLSEN, Christopher S. , BEVAN, Malcolm J.
- 申请人地址： 3050 Bowers Avenue Santa Clara, CA 95054 US
- 专利权人： APPLIED MATERIALS, INC.,ROGERS, Matthew S.,CURTIS, Roger,HAWRYLCHAK, Lara,LAI, Ken Kaung,HWANG, Bernard L.,TOBIN, Jeffrey,OLSEN, Christopher S.,BEVAN, Malcolm J.
- 当前专利权人： APPLIED MATERIALS, INC.,ROGERS, Matthew S.,CURTIS, Roger,HAWRYLCHAK, Lara,LAI, Ken Kaung,HWANG, Bernard L.,TOBIN, Jeffrey,OLSEN, Christopher S.,BEVAN, Malcolm J.
- 当前专利权人地址： 3050 Bowers Avenue Santa Clara, CA 95054 US
- 代理机构： PATTERSON, B. Todd et al.
- 优先权： US61/522,129 20110810; US13/536,443 20120628
- 主分类号： H01L21/318
- IPC分类号： H01L21/318 ; H01L21/3065 ; H01L21/8247 ; H01L27/115
摘要：
Embodiments of the invention provide an improved apparatus and methods for nitridation of stacks of materials. In one embodiment, a remote plasma system includes a remote plasma chamber defining a first region for generating a plasma comprising ions and radicals, a process chamber defining a second region for processing a semiconductor device, the process chamber comprising an inlet port formed in a sidewall of the process chamber, the inlet port being in fluid communication with the second region, and a delivery member disposed between the remote plasma chamber and the process chamber and having a passageway in fluid communication with the first region and the inlet port, wherein the delivery member is configured such that a longitudinal axis of the passageway intersects at an angle of about 20 degrees to about 80 degrees with respect to a longitudinal axis of the inlet port.
摘要（中）：
本发明的实施例提供了一种用于氮化堆叠材料的改进的装置和方法。 在一个实施例中，远程等离子体系统包括限定用于产生包括离子和自由基的等离子体的第一区域的远程等离子体室，限定用于处理半导体器件的第二区域的处理室，所述处理室包括形成在侧壁 处理室的入口端口与第二区域流体连通，以及设置在远程等离子体室和处理室之间并具有与第一区域和入口流体连通的通道的输送构件，其中输送 构件被构造成使得通道的纵向轴线相对于入口的纵向轴线以大约20度至大约80度的角度相交。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/314 | ......无机层 |
| --------------------H01L21/318 | .......由氮化物组成的无机层 |