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1. 发明申请

WO2012103188A2 A METHOD FOR CALCULATING AN OFFSET VALUE FOR ALIGNED DEPOSITION OF A SECOND PATTERN ONTO A FIRST PATTERN 审中-公开
标题翻译：用于计算第一图案的第二图案对齐沉积的偏移值的方法
公开(公告)号：WO2012103188A2
公开(公告)日：2012-08-02
申请号：PCT/US2012/022512
申请日：2012-01-25
申请人： E. I. DU PONT DE NEMOURS AND COMPANY , INNOVALIGHT INC , MEISEL, Andreas
发明人： MEISEL, Andreas
IPC分类号： G06T7/40
CPC分类号： H01L31/1804 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L31/022425 , H01L31/022441 , Y02E10/547 , Y02P70/521
摘要： A method for calculating an offset value for aligned deposition of a second pattern onto a first pattern, comprising steps of: (a) loading a substrate with the first pattern on a surface of the substrate into a pattern recognition device at an original position inside the pattern recognition device; (b) determining a coordinate of a prescribed point of the first pattern by the pattern recognition device; (c) superimposing the second pattern onto the first pattern on the surface of the substrate; (d) bringing back the substrate with the first pattern and the second pattern into the original position inside the pattern recognition device; (e) determining a coordinate of a prescribed point of the second pattern by the pattern recognition device; wherein the prescribed point of the first pattern corresponds to the prescribed point of the second pattern; and (f) calculating the offset value between the first pattern and the second pattern.
摘要翻译：一种用于计算用于将第二图案对准沉积到第一图案上的偏移值的方法，包括以下步骤：（a）将基板的表面上的第一图案的基板加载到图案识别装置内部的原始位置图案识别装置; （b）通过图案识别装置确定第一图案的规定点的坐标; （c）将第二图案叠加在基板的表面上的第一图案上; （d）将具有第一图案和第二图案的基板返回到图案识别装置内部的原始位置; （e）通过图案识别装置确定第二图案的规定点的坐标; 其中所述第一图案的规定点对应于所述第二图案的规定点; 和（f）计算第一图案和第二图案之间的偏移值。

2. 发明申请

WO2010147931A1 SUB-CRITICAL SHEAR THINNING GROUP IV BASED NANOPARTICLE FLUID 审中-公开
标题翻译：第Ⅳ组基于亚硫酸盐的亚临界剪切流体
公开(公告)号：WO2010147931A1
公开(公告)日：2010-12-23
申请号：PCT/US2010/038596
申请日：2010-06-15
申请人： INNOVALIGHT, INC. , KIM, Hyungrak , ABBOTT, Malcolm , MEISEL, Andreas , TAI, Elizabeth , JONES, Augustus , POPLAVSKYY, Dmitry , VANHEUSDEN, Karel
发明人： KIM, Hyungrak , ABBOTT, Malcolm , MEISEL, Andreas , TAI, Elizabeth , JONES, Augustus , POPLAVSKYY, Dmitry , VANHEUSDEN, Karel
IPC分类号： H01B1/02 , H01L21/208
CPC分类号： H01L21/02532 , H01L21/02381 , H01L21/02601 , H01L21/02628 , H01L21/02658
摘要： A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles-comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt% and about 20 wt% of the nanoparticle fluid. The nanoparticle fluid also includes a set of HMW molecules, wherein the set of HMW molecules is present in an amount of between about 0 wt% and about 5 wt% of the nanoparticle fluid. The nanoparticle fluid further includes a set of capping agent molecules, wherein at least some capping agent molecules of the set of capping agent molecules are attached to the set of nanoparticles.
摘要翻译：公开了基于IV族的纳米颗粒流体。纳米颗粒流体包括一组纳米颗粒，其包含一组IV族原子，其中所述纳米颗粒组以纳米颗粒流体的约1重量％至约20重量％的量存在。纳米颗粒流体还包括一组HMW分子，其中该组HMW分子以纳米颗粒流体的约0重量％至约5重量％的量存在。纳米颗粒流体还包括一组封端剂分子，其中所述一组封端剂分子的至少一些封端剂分子连接到该组纳米颗粒上。

3. 发明申请

WO2005123373A3 POST-DEPOSITION ENCAPSULATION OF NANOSTRUCTURES: COMPOSITIONS, DEVICES AND SYSTEMS INCORPORATING SAME 审中-公开
标题翻译：纳米结构的沉积后沉积：组成，装置和系统
公开(公告)号：WO2005123373A3
公开(公告)日：2009-04-16
申请号：PCT/US2005020100
申请日：2005-06-07
申请人： NANOSYS INC , WHITEFORD JEFFERY A , BREWER RHETT , BURETEA MIHAI , CHEN JIAN , CRUDEN CHU KAREN , DUAN XIANGFENG , FREEMAN WILLIAM P , HEALD DAVID , LEON FRANCISCO , LIU CHAO , MEISEL ANDREAS , MIN KYU S , PARCE J WALLACE , SCHER ERIK
发明人： WHITEFORD JEFFERY A , BREWER RHETT , BURETEA MIHAI , CHEN JIAN , CRUDEN CHU KAREN , DUAN XIANGFENG , FREEMAN WILLIAM P , HEALD DAVID , LEON FRANCISCO , LIU CHAO , MEISEL ANDREAS , MIN KYU S , PARCE J WALLACE , SCHER ERIK
IPC分类号： B32B5/16 , B31B15/02 , H01G4/14
CPC分类号： C09C1/3081 , B82Y30/00 , C01P2004/16 , C01P2004/45 , C01P2004/54 , C01P2004/64 , C01P2006/10 , C01P2006/40 , C01P2006/60 , C09C3/006 , C09C3/063 , C09C3/12 , H01G4/14 , Y10S977/773 , Y10T428/2982 , Y10T428/2989 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996 , Y10T428/2998
摘要： Ligand compositions for use in preparing discrete coated nanostructures are provided, as well as the coated nanostructures themselves and devices incorporating same. Methods for post-deposition shell formation on a nanostructure and for reversibly modifying nanostructures are also provided. The ligands and coated nanostructures of the present invention are particularly useful for close packed nanostructure compositions, which can have improved quantum confinement and/or reduced cross-talk between nanostructures.
摘要翻译：提供了用于制备离散涂层纳米结构的配体组合物，以及涂覆的纳米结构本身和结合其的装置。还提供了在纳米结构上沉积后壳形成和用于可逆修饰纳米结构的方法。本发明的配体和包被的纳米结构对于紧密堆积的纳米结构组合物是特别有用的，其可以具有改进的量子限制和/或降低纳米结构之间的串扰。

4. 发明申请

WO2009032359A2 GROUP IV NANOPARTICLE JUNCTIONS AND DEVICES THEREFROM 审中-公开
标题翻译：第四组纳米晶体结及其器件
公开(公告)号：WO2009032359A2
公开(公告)日：2009-03-12
申请号：PCT/US2008057702
申请日：2008-03-20
申请人： INNOVALIGHT INC , ABBOTT MALCOLM , KELMAN MAXIM , LEMMI FRANCESCO , MEISEL ANDREAS , POPLAVSKYY DMITRY , TERRY MASON , VANHEUSDEN KAREL
发明人： ABBOTT MALCOLM , KELMAN MAXIM , LEMMI FRANCESCO , MEISEL ANDREAS , POPLAVSKYY DMITRY , TERRY MASON , VANHEUSDEN KAREL
IPC分类号： H01L31/04
CPC分类号： H01L31/0352 , H01L31/056 , H01L31/061 , H01L31/0682 , H01L31/1804 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.
摘要翻译：公开了一种用于从太阳辐射发电的装置。该器件包括掺杂有第一掺杂剂的晶片，晶片包括前侧和后侧，其中前侧被配置为暴露于太阳辐射。该装置还包括沉积在前侧的融合的IV族纳米颗粒薄膜，其中所述纳米颗粒薄膜包括第二掺杂剂，其中所述第二掺杂剂是反掺杂剂。该装置还包括沉积在纳米颗粒薄膜上的第一电极和沉积在背面的第二电极，其中当向前侧施加太阳辐射时，产生电流。

5. 发明申请

WO2008137738A3 METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
标题翻译：使用激光加工形成IV族半导体结的方法
公开(公告)号：WO2008137738A3
公开(公告)日：2009-01-08
申请号：PCT/US2008062495
申请日：2008-05-02
申请人： INNOVALIGHT INC , LEMMI FRANCESCO , MEISEL ANDREAS , ANTONIADIS HOMER
发明人： LEMMI FRANCESCO , MEISEL ANDREAS , ANTONIADIS HOMER
IPC分类号： H01L31/0368 , H01L21/20 , H01L21/208 , H01L31/0392 , H01L31/068 , H01L31/18
CPC分类号： H01L31/182 , H01L21/0237 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02675 , H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/077 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
摘要翻译：公开了一种在衬底上形成IV族半导体结的方法。该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率施加到第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

6. 发明申请

WO2008076744A1 METHODS OF FORMING AN EPITAXIAL LAYER ON A GROUP IV SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：在IV族半导体基板上形成外延层的方法
公开(公告)号：WO2008076744A1
公开(公告)日：2008-06-26
申请号：PCT/US2007/087205
申请日：2007-12-12
申请人： INNOVALIGHT, INC. , POPLAVSKYY, Dmitry , LEMMI, Francesco , KELMAN, Maxim , MEISEL, Andreas
发明人： POPLAVSKYY, Dmitry , LEMMI, Francesco , KELMAN, Maxim , MEISEL, Andreas
IPC分类号： H01L21/208 , H01L21/20
CPC分类号： H01L21/02601 , H01L21/02381 , H01L21/02532 , H01L21/02535 , H01L21/02628 , H01L21/02667 , H01L21/02686
摘要： A method of forming an epitaxial layer in a chamber is disclosed. The method includes positioning a Group IV semiconductor substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV nanoparticles and a solvent, wherein a porous compact is formed. The method also includes heating the porous compact to a temperature of between about 100°C and about 1100°C, and for a time period of between about 5 minutes to about 60 minutes with a heating apparatus, wherein the epitaxial layer is formed.
摘要翻译：公开了一种在室中形成外延层的方法。该方法包括将IV族半导体衬底定位在腔室中; 以及沉积纳米颗粒油墨，所述纳米颗粒油墨包括一组IV族纳米颗粒和溶剂，其中形成多孔压块。该方法还包括使用加热装置将多孔压块加热至约100℃至约1100℃的温度和约5分钟至约60分钟之间的时间，其中形成外延层。

7. 发明申请

WO2005023923A2 METHODS OF PROCESSING NANOCRYSTALS, AND COMPOSITIONS, DEVICES AND SYSTEMS INCLUDING SAME 审中-公开
标题翻译：加工纳米晶体的方法和组合物，包括它们的器件和系统
公开(公告)号：WO2005023923A2
公开(公告)日：2005-03-17
申请号：PCT/US2004/028966
申请日：2004-09-02
申请人： NANOSYS, INC. , SCHER, Erik , BURETEA, Mihai , WHITEFORD, Jeffery, A. , MEISEL, Andreas
发明人： SCHER, Erik , BURETEA, Mihai , WHITEFORD, Jeffery, A. , MEISEL, Andreas
IPC分类号： C08K
CPC分类号： B01D9/00
摘要： Methods of processing nanocrystals to remove excess free and bound organic material and particularly surfactants used during the synthesis process, and resulting nanocrystal compositions, devices and systems that are physically, electrically and chemically integratable into an end application.
摘要翻译：处理纳米晶体以去除过量游离和结合的有机材料，特别是在合成过程中使用的表面活性剂的方法，以及在物理，电学和化学上可整合成最终应用的所得纳米晶体组合物，器件和系统。

8. 发明申请

WO2012103188A3 A METHOD FOR CALCULATING AN OFFSET VALUE FOR ALIGNED DEPOSITION OF A SECOND PATTERN ONTO A FIRST PATTERN 审中-公开
标题翻译：用于计算第一图案的第二图案对齐沉积的偏移值的方法
公开(公告)号：WO2012103188A3
公开(公告)日：2013-03-07
申请号：PCT/US2012022512
申请日：2012-01-25
申请人： DU PONT , INNOVALIGHT INC , MEISEL ANDREAS
发明人： MEISEL ANDREAS
IPC分类号： H01L31/0224
CPC分类号： H01L31/1804 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L31/022425 , H01L31/022441 , Y02E10/547 , Y02P70/521
摘要： A method for calculating an offset value for aligned deposition of a second pattern onto a first pattern, comprising steps of: (a) loading a substrate with the first pattern on a surface of the substrate into a pattern recognition device at an original position inside the pattern recognition device; (b) determining a coordinate of a prescribed point of the first pattern by the pattern recognition device; (c) superimposing the second pattern onto the first pattern on the surface of the substrate; (d) bringing back the substrate with the first pattern and the second pattern into the original position inside the pattern recognition device; (e) determining a coordinate of a prescribed point of the second pattern by the pattern recognition device; wherein the prescribed point of the first pattern corresponds to the prescribed point of the second pattern; and (f) calculating the offset value between the first pattern and the second pattern.
摘要翻译：一种用于计算用于将第二图案对准沉积到第一图案上的偏移值的方法，包括以下步骤：（a）将基板的表面上的第一图案的基板加载到图案识别装置内部的原始位置图案识别装置; （b）通过图案识别装置确定第一图案的规定点的坐标; （c）将第二图案叠加在基板的表面上的第一图案上; （d）将具有第一图案和第二图案的基板返回到图案识别装置内部的原始位置; （e）通过图案识别装置确定第二图案的规定点的坐标; 其中所述第一图案的规定点对应于所述第二图案的规定点; 和（f）计算第一图案和第二图案之间的偏移值。

9. 发明申请

WO2008137738A2 METHOD OF FORMING GROUP IV SEMICONDUCTOR JUNCTIONS USING LASER PROCESSING 审中-公开
标题翻译：使用激光加工形成IV族半导体结的方法
公开(公告)号：WO2008137738A2
公开(公告)日：2008-11-13
申请号：PCT/US2008/062495
申请日：2008-05-02
申请人： INNOVALIGHT, INC. , LEMMI, Francesco , MEISEL, Andreas , ANTONIADIS, Homer
发明人： LEMMI, Francesco , MEISEL, Andreas , ANTONIADIS, Homer
IPC分类号： H01L31/0368 , H01L31/0392 , H01L31/068 , H01L31/075 , H01L31/18 , H01L21/20
CPC分类号： H01L31/182 , H01L21/0237 , H01L21/02524 , H01L21/02532 , H01L21/02601 , H01L21/02628 , H01L21/02675 , H01L31/03682 , H01L31/03921 , H01L31/068 , H01L31/077 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film. The method also includes applying a second laser at a second laser wavelength, a second fluence, a second pulse duration, a second number of repetitions, and a second repetition rate to the second set Group IV semiconductor nanoparticles to form a second densified film with a second thickness, wherein the second laser wavelength and the second fluence are selected to limit a second depth profile of the second laser to the second thickness.
摘要翻译：公开了一种在衬底上形成IV族半导体结的方法。该方法包括在衬底上沉积第一组IV族半导体纳米颗粒。该方法还包括将第一激光波长的第一激光，第一注量，第一脉冲持续时间，第一次重复和第一重复率施加到第一组IV族半导体纳米颗粒，以形成第一致密化膜，其具有第一厚度，其中选择第一激光波长和第一注量以将第一激光器的第一深度分布限制到第一厚度。该方法还包括在第一致密化膜上沉积第二组IV族半导体纳米颗粒。该方法还包括将第二激光器以第二激光波长，第二注量，第二脉冲持续时间，第二数量的重复和第二重复率施加到第二组IV族半导体纳米颗粒以形成第二致密化膜，其具有第二厚度，其中选择第二激光波长和第二注量以将第二激光器的第二深度分布限制到第二厚度。

10. 发明申请

WO2008013780A2 NANOCRYSTAL DOPED MATRIXES 审中-公开
公开(公告)号：WO2008013780A2
公开(公告)日：2008-01-31
申请号：PCT/US2007016584
申请日：2007-07-23
申请人： NANOSYS INC , PARCE J WALLACE , BERNATIS PAUL , DUBROW ROBERT , FREEMAN WILLIAM P , GAMORAS JOEL , KAN SHIHAI , MEISEL ANDREAS , QIAN BAIXIN , WHITEFORD JEFFERY A , ZIEBARTH JONATHAN
发明人： PARCE J WALLACE , BERNATIS PAUL , DUBROW ROBERT , FREEMAN WILLIAM P , GAMORAS JOEL , KAN SHIHAI , MEISEL ANDREAS , QIAN BAIXIN , WHITEFORD JEFFERY A , ZIEBARTH JONATHAN
IPC分类号： C09K11/02 , H01L33/50
CPC分类号： C09K11/02 , B82Y20/00 , B82Y30/00 , C01B19/007 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2004/04 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C09K11/565 , C09K11/70 , C09K11/883 , G02B1/11 , G02B3/0087 , G02B2207/101 , H01L33/502 , Y10S977/783
摘要： Matrixes doped with semiconductor nanocrystals are provided. In certain embodiments, the semiconductor nanocrystals have a size and composition such that they absorb or emit light at particular wavelengths. The nanocrystals can comprise ligands that allow for mixing with various matrix materials, including polymers, such that a minimal portion of light is scattered by the matrixes. The matrixes of the present invention can also be utilized in refractive index matching applications. In other embodiments, semiconductor nanocrystals are embedded within matrixes to form a nanocrystal density gradient, thereby creating an effective refractive index gradient. The matrixes of the present invention can also be used as filters and antireflective coatings on optical devices and as down-converting layers. Processes for producing matrixes comprising semiconductor nanocrystals are also provided. Nanostructures having high quantum efficiency, small size, and/or a narrow size distribution are also described, as are methods of producing indium phosphide nanostructures and core-shell nanostructures with Group II- VI shells. A variety of novel nanostructure ligands are described.
摘要翻译：提供掺杂半导体纳米晶体的矩阵。在某些实施方案中，半导体纳米晶体具有使其吸收或发射特定波长的光的尺寸和组成。纳米晶体可以包括允许与各种基质材料（包括聚合物）混合的配体，使得最小部分的光被基质散射。本发明的基质也可用于折射率匹配应用。在其它实施例中，将半导体纳米晶体嵌入在基质内以形成纳米晶体密度梯度，从而产生有效的折射率梯度。本发明的基质也可以用作光学器件上的滤光片和抗反射涂层以及下变换层。还提供了用于生产包含半导体纳米晶体的基质的方法。还描述了具有高量子效率，小尺寸和/或窄尺寸分布的纳米结构，以及制备具有II-VI族壳的磷化铟纳米结构和核 - 壳纳米结构的方法。描述了各种新型纳米结构配体。

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