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    • 1. 发明申请
    • SEMICONDUCTOR MEMORY DEVICE COMPRISING ONE OR MORE INJECTING BILAYER ELECTRODES
    • 包含一个或多个注射双极电极的半导体存储器件
    • WO2007035259A1
    • 2007-03-29
    • PCT/US2006/034633
    • 2006-09-06
    • SPANSION LLCSOKOLIK, IgorKINGSBOROUGH, Richard, P.MANDELL, Aaron
    • SOKOLIK, IgorKINGSBOROUGH, Richard, P.MANDELL, Aaron
    • G11C13/02H01L51/00
    • G11C13/0014B82Y10/00G11C13/0016G11C2213/55G11C2213/56G11C2213/71G11C2213/72H01L27/285
    • The subject invention provides systems and methods that facilitate formation of semiconductor memory devices comprising memory cells (300, 500, 600) with one or more injecting bilayer electrodes ( 100, 202, 308). Memory arrays generally comprise bit cells that have two discrete components; a memory element and a selection element, such as, for example, a diode. The invention increases the efficiency of a memory device by forming memory cells (300, 500, 600) with selection diodes comprising a bilayer electrode (100, 202, 308). Memory cells (300, 500, 600) are provided comprising bilayer cathodes (508) and/or bilayer anodes (608) that facilitate a significant improvement in charge injection into the diode layers (204, 306, 406, 506, 606) of memory cells (300, 500, 600). The increased charge (e.g. electrons or holes) density in the diode layers (204, 306, 406, 506, 606) of the selected memory cells (300, 500, 600) results in improved memory cell switching times and lowers the voltage required for the memory cell (300, 500, 600) to operate, thereby, creating a more efficient memory cell (300, 500, 600).
    • 本发明提供了有助于形成包括具有一个或多个注入双层电极(100,202,308)的存储单元(300,500,600)的半导体存储器件的系统和方法。 存储器阵列通常包括具有两个分立组件的位单元; 存储元件和选择元件,例如二极管。 本发明通过用包括双层电极(100,202,308)的选择二极管形成存储单元(300,500,600)来提高存储器件的效率。 提供存储单元(300,500,600),其包括双层阴极(508)和/或双层阳极(608),其有助于电荷注入到存储器的二极管层(204,306,406,506,606)中的显着改进 细胞(300,500,600)。 所选择的存储单元(300,500,600)的二极管层(204,306,406,506,606)中增加的电荷(例如电子或空穴)密度导致存储单元切换时间的改善,并降低了 所述存储器单元(300,500,600)进行操作,从而创建更有效率的存储单元(300,500,600)。