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1. 发明申请

WO2003104829A1 SENSOR AND METHOD FOR MEASURING A CURRENT OF CHARGED PARTICLES 审中-公开
标题翻译：用于测量充电颗粒电流的传感器和方法
公开(公告)号：WO2003104829A1
公开(公告)日：2003-12-18
申请号：PCT/IB2003/002263
申请日：2003-05-21
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H.
发明人： LENSSEN, Kars-Michiel, H.
IPC分类号： G01R33/09
CPC分类号： G01R15/205 , G01R33/09
摘要： A current sensor (1) is disclosed for measuring a magnetic field (8) induced by a current of charged particles (3) having at least one magneto resistive sensor element (2;6;12;16) for enclosing the magnetic field induced by the current of charged particles, the magneto resistive sensor element being arranged perpendicularly to the current (3) during use. A method for accurately determining a current of charged particles is also disclosed making use of the current sensor (1). Further a protective switch device (30) is disclosed for protecting a user of an electrical device (31) by switching a supply current to the electric device off in case of malfunction of the electric device is also provided comprising the above current sensor (1).
摘要翻译：公开了一种用于测量由具有至少一个磁阻传感器元件（2; 6; 12; 16）的带电粒子（3）的电流引起的磁场（8）的电流传感器（1），用于封闭由带电粒子的电流，磁阻电阻传感器元件在使用期间垂直于电流（3）布置。还公开了一种用于精确地确定带电粒子的电流的方法，利用电流传感器（1）。此外，还提供了一种保护开关装置（30），用于通过在还包括上述电流传感器（1）的情况下提供电气装置的故障的情况下切断对电气装置的供电电流来保护电气装置的使用者，。

2. 发明申请

WO2003054886A3 INCREASED MAGNETIC STABILITY DEVICES SUITABLE FOR USE AS SUB-MICRON MEMORIES 审中-公开
公开(公告)号：WO2003054886A3
公开(公告)日：2003-07-03
申请号：PCT/IB2002/005475
申请日：2002-12-16
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
发明人： GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
IPC分类号： G11C11/16
摘要： Magnetic device cells such as MRAM cells are described which can be used in sub-micron cell sizes. The present invention describes a method of stabilising magnetic device cells by creating a storage state where the two magnetisation directions of the spin valve are anti-parallel when no readout is performed. This avoids the problem at such small dimensions, that the parallel state of magnetisation directions in a spin valve or a spin tunnel junction become unstable. A high coercivity memory layer is combined with a low coercivity keeper layer. The read out process has also been simplified: only one pulse over the bit line and measurement of the resistance in the word line is sufficient to determine the data stored in a magnetic device cell according to the present invention.

3. 发明申请

WO2003054886A2 INCREASED MAGNETIC STABILITY DEVICES SUITABLE FOR USE AS SUB-MICRON MEMORIES 审中-公开
标题翻译：增加的磁性稳定性器件适用于作为副MICRON MEMORIES
公开(公告)号：WO2003054886A2
公开(公告)日：2003-07-03
申请号：PCT/IB2002/005475
申请日：2002-12-16
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
发明人： GILLIES, Murray, F. , LENSSEN, Kars-Michiel, H.
IPC分类号： G11C11/16
CPC分类号： G11C11/15 , G11C11/16
摘要： Magnetic device cells such as MRAM cells are described which can be used in sub-micron cell sizes. The present invention describes a method of stabilising magnetic device cells by creating a storage state where the two magnetisation directions of the spin valve are anti-parallel when no readout is performed. This avoids the problem at such small dimensions, that the parallel state of magnetisation directions in a spin valve or a spin tunnel junction become unstable. A high coercivity memory layer is combined with a low coercivity keeper layer. The read out process has also been simplified: only one pulse over the bit line and measurement of the resistance in the word line is sufficient to determine the data stored in a magnetic device cell according to the present invention.
摘要翻译：描述了可以以亚微米级细胞大小使用的磁性器件细胞，例如MRAM细胞。本发明描述了一种通过产生存储状态来稳定磁性器件单元的方法，其中当不执行读出时，自旋阀的两个磁化方向是反平行的。这避免了在这样小的尺寸下的问题，即自旋阀或自旋隧道结中的磁化方向的平行状态变得不稳定。高矫顽力记忆层与低矫顽力保持层组合。读出过程也被简化：根据本发明，在位线上只有一个脉冲和字线中的电阻的测量足以确定存储在磁性器件单元中的数据。

4. 发明申请

WO2011027265A1 TOUCH SENSING OUTPUT DEVICE 审中-公开
标题翻译：触摸感应输出装置
公开(公告)号：WO2011027265A1
公开(公告)日：2011-03-10
申请号：PCT/IB2010/053832
申请日：2010-08-26
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , FAIRLEY, Peter, Douglas , SIMONS, Paul, Richard , PITCHERS, Stephen, Michael , VERSCHUEREN, Alwin, Rogier, Martijn , VAN DELDEN, Martinus Hermanus, Wilhelmus, Maria , LENSSEN, Kars-Michiel , MÜLLER, Manfred , STOFMEEL, Leon, Wilhelmus, Godefridus
发明人： FAIRLEY, Peter, Douglas , SIMONS, Paul, Richard , PITCHERS, Stephen, Michael , VERSCHUEREN, Alwin, Rogier, Martijn , VAN DELDEN, Martinus Hermanus, Wilhelmus, Maria , LENSSEN, Kars-Michiel , MÜLLER, Manfred , STOFMEEL, Leon, Wilhelmus, Godefridus
IPC分类号： G06F3/041 , G02F1/167 , G06F3/044
CPC分类号： G06F3/0412 , G02F1/167 , G02F2001/1676 , G06F3/044
摘要： A device having touch sensor input functionality, comprises first and second control electrodes (40,42) lying in a common plane. The device is operable in at least two modes, comprising: a first mode in which the light transmission characteristics are altered by controlling the movement of the charged particles under the influence of control signals applied to the first and second control electrodes; and a second mode in which the first and second control electrodes are coupled to a capacitance sensing means, for detecting a change in capacitance caused by the proximity of an object to be detected.
摘要翻译：具有触摸传感器输入功能的装置包括位于公共平面中的第一和第二控制电极（40,42）。该装置可在至少两种模式中操作，包括：第一模式，其中通过在施加到第一和第二控制电极的控制信号的影响下控制带电粒子的移动来改变光透射特性; 以及第二模式，其中第一和第二控制电极耦合到电容感测装置，用于检测由被检测物体的接近度引起的电容变化。

5. 发明申请

WO2005022546A1 ACTIVE SHIELDING FOR A CIRCUIT COMPRISING MAGNETICALLY SENSITIVE MATERIALS 审中-公开
标题翻译：包含敏感材料的电路的主动屏蔽
公开(公告)号：WO2005022546A1
公开(公告)日：2005-03-10
申请号：PCT/IB2004/051509
申请日：2004-08-20
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel
发明人： LENSSEN, Kars-Michiel
IPC分类号： G11C11/15
CPC分类号： G11C7/02 , G01R33/025 , G11C11/15 , G11C11/16 , G11C11/1675 , G11C11/1695
摘要： The present invention provides a method for providing magnetic shielding for a circuit comprising magnetically sensitive materials, comprising actively shielding the circuit from a disturbing magnetic field. A corresponding semiconductor device is also provided. The method and device allows shielding for strong disturbing magnetic fields.
摘要翻译：本发明提供了一种用于为包括磁敏材料的电路提供磁屏蔽的方法，包括主动屏蔽电路免受干扰磁场的影响。还提供了相应的半导体器件。该方法和装置允许屏蔽强烈的干扰磁场。

6. 发明申请

WO2007042950A2 IN-PLANE SWITCHING DISPLAY DEVICES 审中-公开
标题翻译：平面内切换显示设备
公开(公告)号：WO2007042950A2
公开(公告)日：2007-04-19
申请号：PCT/IB2006/053289
申请日：2006-09-14
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , U.S. PHILIPS CORPORATION , JOHNSON, Mark, T. , VERSCHUEREN, Alwin, R., M. , VAN DELDEN, Martinus, H., W., M. , ROOSENDAAL, Sander, J. , LENSSEN, Kars-Michiel
发明人： JOHNSON, Mark, T. , VERSCHUEREN, Alwin, R., M. , VAN DELDEN, Martinus, H., W., M. , ROOSENDAAL, Sander, J. , LENSSEN, Kars-Michiel
CPC分类号： G09G3/3446 , G09G3/2011 , G09G3/2014 , G09G3/2018 , G09G2300/0426 , G09G2300/0434 , G09G2300/06 , G09G2310/06 , G09G2310/063 , G09G2320/0209 , G09G2320/0233 , G09G2320/0252
摘要： A drive method is provided for a display device using the movement of charged particles with a pixel area, with each pixel having first and second drive electrodes (20,23; 22) and a pixel electrode (26). The method comprises a reset phase to move the particles in each pixel towards the first drive electrode (20,23), a pixel data loading phase, to cause selected particles either to stay in the vicinity of the first drive electrode (20,23) or move towards the pixel electrode (26), and a drive phase to distribute the particles which have moved towards the pixel electrode over the pixel electrode (26). The address phase is line-by-line but can be made short, and the other phases can be carried out in parallel for all pixels, saving time.
摘要翻译：提供了一种使用带有像素区域的带电粒子的移动的显示装置的驱动方法，每个像素具有第一和第二驱动电极（20,23; 22）和像素电极（26）。该方法包括复位阶段，以将每个像素中的粒子朝向第一驱动电极（20,23）移动像素数据加载阶段，以使选定的粒子停留在第一驱动电极（20,23）附近，或朝向像素电极（26）移动，以及驱动相以分散已经朝像素电极（26）移动的像素电极的粒子。地址阶段是逐行的，但可以缩短，其他阶段可以并行执行所有像素，节省时间。

7. 发明申请

WO2004055823A3 HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS 审中-公开
标题翻译：用于磁记忆体的硬件安全装置
公开(公告)号：WO2004055823A3
公开(公告)日：2005-04-14
申请号：PCT/IB0305999
申请日：2003-12-15
申请人： KONINKL PHILIPS ELECTRONICS NV , LENSSEN KARS-MICHIEL H , DENISSEN ADRIANUS J M , LAMBERT NICOLAAS
发明人： LENSSEN KARS-MICHIEL H , DENISSEN ADRIANUS J M , LAMBERT NICOLAAS
IPC分类号： G11C7/24 , G11C11/16 , H01L23/58
CPC分类号： H01L23/57 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1695 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning.
摘要翻译：本发明提供了一种磁性元件的特殊结构。 MRAM元件（10,11），作为用于包含磁存储器单元的IC的安全装置（30）。该结构可以包括具有预设的反并联磁化方向的两个或更多个相关联的磁性元件（10,11）的组合。通过确定磁性元件的极化方向，可以检测到暴露于外部磁场。反偏振方向表示正常情况，对准偏振方向表示MRAM阵列暴露于外部场。以这种方式，可以检测是否以非法方式擦除或更改存储在MRAM中的数据。 IC可以在运行期间定期检查安全系统的电阻。在检测到场曝光时，IC可以擦除所有的MRAM数据，或者可以自己复位或阻止其功能。

8. 发明申请

WO03096351A8 MEMORIES AND MEMORY CIRCUITS 审中-公开
标题翻译：记忆和记忆电路
公开(公告)号：WO03096351A8
公开(公告)日：2004-12-23
申请号：PCT/IB0301748
申请日：2003-04-29
申请人： KONINKL PHILIPS ELECTRONICS NV , VAN DER ZAAG PIETER J , EDWARDS MARTIN J , LENSSEN KARS-MICHIEL H
发明人： VAN DER ZAAG PIETER J , EDWARDS MARTIN J , LENSSEN KARS-MICHIEL H
IPC分类号： G02F1/1333 , G02F1/1362 , G11C11/15 , G11C11/16 , G11C11/411 , H01L21/8246 , H01L27/105 , H01L43/08 , G11C
CPC分类号： G11C11/16
摘要： Magnetoresistive random access memory (MRAM) is used to provide in-pixel memory circuits for display devices. A memory circuit (25) comprises two MRAMs (60, 62), each coupled to a respective input of a flip-flop circuit (64). A display device (1) is provided comprising a plurality of pixels (20) each associated with a memory circuit (25). One of the MRAMs is a switchable MRAM (60), the other MRAM is a reference MRAM (62) arranged to provide a reference by which the changed states of the switchable MRAM (60) may be readily observed and measured in the form of a differential.
摘要翻译：磁阻随机存取存储器（MRAM）用于为显示设备提供像素内存电路。存储器电路（25）包括两个MRAM（60,62），每个MRAM耦合到触发器电路（64）的相应输入端。提供一种显示装置（1），其包括与存储电路（25）相关联的多个像素（20）。 MRAM中的一个是可切换MRAM（60），另一个MRAM是被配置为提供参考的参考MRAM（62），通过该参考，可以容易地观察和测量可切换MRAM（60）的改变状态，微分。

9. 发明申请

WO2004055824A2 METHOD AND DEVICE FOR PROTECTION OF AN MRAM DEVICE AGAINST TAMPERING 审中-公开
标题翻译：用于保护防止篡改的MRAM装置的方法和装置
公开(公告)号：WO2004055824A2
公开(公告)日：2004-07-01
申请号：PCT/IB2003/006005
申请日：2003-12-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H. , JOCHEMSEN, Robert
发明人： LENSSEN, Kars-Michiel, H. , JOCHEMSEN, Robert
IPC分类号： G11C11/16
CPC分类号： H01L23/57 , G06F21/79 , G06K19/07372 , G11C8/20 , G11C11/1695 , H01L2924/0002 , Y10S257/922 , H01L2924/00
摘要： Data, stored in MRAM-cells (12) should be protected against misuse or read-out by unauthorised persons. The present invention provides an array (10) of MRAM-cells (12) provided with a security device (14) for destroying data stored in the MRAM-cells (12) when they are tampered with. This is achieved by placing a permanent magnet (16) adjacent the MRAM-array (10) in combination with a soft-magnetic flux-closing layer (18). As long as the soft-magnetic layer (18) is present, the magnetic field lines (20) from the permanent magnet (16) are deviated and flow through this soft-magnetic layer (18). When somebody is tampering with the MRAM-array (10), e.g. by means of reverse engineering, and the flux-closing layer (18) is removed, the flux is no longer deviated and affects the nearby MRAM-array (10), thus destroying the data stored in the MRAM-cells (12).
摘要翻译：存储在MRAM单元（12）中的数据应受到保护，防止未经授权的人员误用或读取。本发明提供了一种具有安全装置（14）的MRAM单元（12）的阵列（10），用于当它们被篡改时，破坏存储在MRAM单元（12）中的数据。这通过将与MRAM阵列（10）相邻的永磁体（16）与软磁通量闭合层（18）组合来实现。只要存在软磁性层（18），来自永磁体（16）的磁场线（20）就会偏离并流过该软磁层（18）。当某人篡改MRAM阵列（10）时，例如，通过逆向工程，并且去除磁通密闭层（18），磁通不再偏离并影响附近的MRAM阵列（10），从而破坏存储在MRAM单元（12）中的数据。

10. 发明申请

WO2004055823A2 HARDWARE SECURITY DEVICE FOR MAGNETIC MEMORY CELLS 审中-公开
标题翻译：用于磁记忆体的硬件安全装置
公开(公告)号：WO2004055823A2
公开(公告)日：2004-07-01
申请号：PCT/IB2003/005999
申请日：2003-12-15
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LENSSEN, Kars-Michiel, H. , DENISSEN, Adrianus, J., M. , LAMBERT, Nicolaas
发明人： LENSSEN, Kars-Michiel, H. , DENISSEN, Adrianus, J., M. , LAMBERT, Nicolaas
IPC分类号： G11C11/16
CPC分类号： H01L23/57 , G11C11/161 , G11C11/1659 , G11C11/1675 , G11C11/1695 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a special structure of magnetic elements, e.g. MRAM elements (10, 11), as a security device (30) for IC's containing magnetic memory cells. The structure may comprise a combination of two or more associated magnetic elements (10, 11) with pre-set anti-parallel magnetization directions. By determining the polarisation directions of the magnetic elements, exposure to an external magnetic field can be detected. Inverse polarisation directions indicate a normal situation, aligned polarisation directions indicate that the MRAM-array has been exposed to an external field. In this way it can be detected whether it has been tried to erase or alter the data stored in the MRAM in an illegal way. The IC can regularly check the resistance of the security system during operation. Upon detection of a field exposure, the IC can erase all MRAM data, or can reset itself or block its functioning.
摘要翻译：本发明提供了一种磁性元件的特殊结构。 MRAM元件（10,11），作为用于包含磁存储器单元的IC的安全装置（30）。该结构可以包括具有预设的反并联磁化方向的两个或更多个相关联的磁性元件（10,11）的组合。通过确定磁性元件的极化方向，可以检测到暴露于外部磁场。反偏振方向表示正常情况，对准偏振方向表示MRAM阵列暴露于外部场。以这种方式，可以检测是否以非法方式擦除或更改存储在MRAM中的数据。 IC可以在运行期间定期检查安全系统的电阻。在检测到场曝光时，IC可以擦除所有的MRAM数据，或者可以自己复位或阻止其功能。

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