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    • 2. 发明申请
    • A PHOTODIODE FOR DETECTION WITHIN MOLECULAR DIAGNOSTICS
    • 用于在分子诊断中检测的光致抗体
    • WO2008012705A3
    • 2008-08-14
    • PCT/IB2007052630
    • 2007-07-05
    • KONINKL PHILIPS ELECTRONICS NVVAN DER ZAAG PIETER JFRENCH IANYOUNG NIGEL D
    • VAN DER ZAAG PIETER JFRENCH IANYOUNG NIGEL D
    • H01L31/105G01N21/25G01N21/64H01L31/103
    • H01L31/1055G01N21/6428H01L31/103
    • A photodiode (200), for instance a PN or a PIN photodiode, is disclosed. The photodiode receives incident radiation having first and second spectral distributions, where the first spectral distribution is spectrally shifted from the second spectral distribution. The photodiode has a first semiconductor layer (211) capable of absorbing incident radiation (231) having a first spectral distribution without generating a photocurrent, while simultaneously transmitting incident radiation having a second spectral distribution to the intrinsic layer (212) for generating a photocurrent (213). The photodiode may be used in connection with detecting the presence of target molecules that has been labeled with labeling agents, such as fluorophores or quantum dots. The labeling agents are characterized by the Stokes shift and, therefore, they emit fluorescent radiation having the second spectral distribution that is spectrally shifted from the illumination radiation having the first spectral distribution.
    • 公开了一种光电二极管(200),例如PN或PIN光电二极管。 光电二极管接收具有第一和第二光谱分布的入射辐射,其中第一光谱分布从第二光谱分布光谱偏移。 光电二极管具有能够吸收具有第一光谱分布而不产生光电流的入射辐射(231)的第一半导体层(211),同时将具有第二光谱分布的入射辐射传输到本征层(212)以产生光电流 213)。 光电二极管可用于检测已经用标记试剂如荧光团或量子点标记的靶分子的存在。 标记试剂的特征在于斯托克斯位移,因此,它们发射具有与具有第一光谱分布的照射辐射光谱偏移的第二光谱分布的荧光辐射。
    • 6. 发明申请
    • METHOD OF IMPROVING THE CONDUCTIVITY OF TRANSPARENT CONDUCTOR LINES
    • 提高透明导体线路电导率的方法
    • WO02063386A3
    • 2002-10-10
    • PCT/IB0200216
    • 2002-01-25
    • KONINKL PHILIPS ELECTRONICS NV
    • FRENCH IAN DVAN DER ZAAG PIETER JDE KUBBER DAAN L
    • G02F1/1343G02F1/1362G02F1/1345H01L31/18H01L51/20
    • G02F1/136286G02F2001/13629G02F2001/136295
    • A method of improving the electrical conductivity of transparent conducting lines (32) carried on a substrate (46), particularly address lines on the active plate for a pixellated device such as an active matrix liquid crystal display or the like fabricated using a low mask count process, involves forming the lines on the substrate from a deposited layer of transparent conducting material (53), e.g. ITO, and provided on their upper surface with a covering layer (72') extending from at least one end (75) and partially covering the surface, and then performing an electroplating operation to plate the lines (80) with a plating potential being applied at that end. The covering layer (72') assists in achieving a more uniform plated layer (80) along the length of the line. The covering layer preferably comprises photoresist defined by selective patterning and partial etching of a deposited photoresist layer (54) used for patterning the transparent layer (53). In a pixellated device, pixel electrodes (38) are also defined from the transparent layer.
    • 一种提高衬底(46)上承载的透明导线(32)的电导率的方法,特别是用于诸如有源矩阵液晶显示器等的像素化器件的有源板上的地址线,所述像素化器件使用低掩模计数 工艺,包括从沉积的透明导电材料层(53)在衬底上形成线,例如, ITO,并且在其上表面上设置有从至少一个端部(75)延伸并部分地覆盖表面的覆盖层(72'),然后执行电镀操作以施加电镀电位来镀覆线(80) 在那边。 覆盖层(72')有助于沿着线的长度实现更均匀的镀层(80)。 覆盖层优选包括通过选择性图案化和部分蚀刻用于图案化透明层(53)的沉积光致抗蚀剂层(54)而限定的光致抗蚀剂。 在像素化器件中,像素电极(38)也由透明层限定。