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    • 8. 发明申请
    • READING MEMORY CELLS USING MULTIPLE THRESHOLDS
    • 使用多个阈值读取记忆细胞
    • WO2008053472A3
    • 2009-05-14
    • PCT/IL2007001315
    • 2007-10-30
    • ANOBIT TECHNOLOGIES LTDSOMMER NAFTALISHALVI OFIRSOKOLOV DOTAN
    • SOMMER NAFTALISHALVI OFIRSOKOLOV DOTAN
    • G11C11/34G11C16/04G11C16/06G11C29/00
    • G06F11/1068G11C8/20G11C11/56G11C11/5642G11C27/005
    • A method for operating a memory (28) includes storing data, which is encoded with an Error Correction Code (ECC), in analog memory cells (32) of the memory by writing respective analog input values selected from a set of nominal values to the analog memory cells. The stored data is read by performing multiple read operations that compare analog output values of the analog memory cells to different, respective read thresholds so as to produce multiple comparison results for each of the analog memory cells. At least two of the read thresholds are positioned between a pair of the nominal values that are adjacent to one another in the set of the nominal values. Soft metrics are computed responsively to the multiple comparison results. The ECC is decoded using the soft metrics, so as to extract the data stored in the analog memory cells.
    • 一种用于操作存储器(28)的方法包括:通过将从一组标称值中选择的相应模拟输入值写入到存储器的模拟存储器单元(32)中来存储用错误校正码(ECC)编码的数据, 模拟存储单元。 通过执行将模拟存储器单元的模拟输出值与不同的相应读取阈值进行比较的多个读取操作来读取存储的数据,以便为每个模拟存储器单元产生多个比较结果。 读取阈值中的至少两个位于在标称值的集合中彼此相邻的一对标称值之间。 响应于多个比较结果计算软度量。 使用软指标对ECC进行解码,以便提取存储在模拟存储单元中的数据。
    • 9. 发明申请
    • MEMORY ARRAY HAVING ROW REDUNDANCY AND METHOD
    • 具有冗余和方法的存储阵列
    • WO2007136812A3
    • 2008-07-17
    • PCT/US2007012026
    • 2007-05-18
    • INNOVATIVE SILICON SASINGH ANANT PRATAP
    • SINGH ANANT PRATAP
    • G11C8/00G11C7/00
    • G11C8/20G11C11/413G11C29/78G11C29/802
    • A memory cell array (10) having (a) a plurality of memory cells arranged in a plurality of normal rows (14) associated with selectable normal row addresses and redundant rows(14r) associated with selectable redunda row addresses, (b) an address decoder circuitry (52) to generate decoded row address data in response to applied row address, (c) a memory to store decoded redundant row address data, (d) normal word line drivers (24), (e) redundant word line drivers (24r), and (f) a redundancy address evaluation circuitry (50) to (i) store decoded redundant row address data and (ii) in operation, determine whether the decoded row address data corresponds to decoded redundant row address data, and in response thereto, to enable the redundant word li drivers (24r).
    • 一种存储单元阵列(10),其具有(a)布置在与可选择的正常行地址相关联的多个正常行(14)中的多个存储器单元和与可选择的冗余行地址相关联的冗余行(14r),(b)地址 解码器电路(52),用于响应于所施加的行地址产生解码的行地址数据,(c)存储解码的冗余行地址数据的存储器,(d)正常字线驱动器(24),(e)冗余字线驱动器 24r),和(f)冗余地址评估电路(50)至(i)存储经解码的冗余行地址数据和(ii)在操作中,确定解码的行地址数据是否对应于解码的冗余行地址数据,并且作为响应 以使能冗余字li驱动器(24r)。