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    • 5. 发明申请
    • NITROGEN GAS INJECTION APPARATUS
    • 氮气注射装置
    • WO2011019157A2
    • 2011-02-17
    • PCT/KR2010005097
    • 2010-08-03
    • LEE SEUNG YONG
    • LEE SEUNG YONG
    • H01L21/02
    • H01L21/67017F16L23/006
    • The present invention relates to a nitrogen gas injection apparatus for semiconductor fabrication equipment or LCD fabrication equipment, which can be simply manufactured and which thus reduces manufacturing costs, and which enables a nitrogen gas injection direction to correspond to the flow direction of reaction by-products, to thereby inject nitrogen gas in an effective manner without disturbing the flow of reaction by-products. The nitrogen gas injection apparatus comprises: a pair of flanged pipes having flanges; a ring-shaped injection nozzle coupled along the inner wall of one of the flanged pipes coupled together, to supply nitrogen gas into the flanged pipes; and a nitrogen supply line connected to the injection nozzle to supply nitrogen gas. The interior of the injection nozzle has a hole to enable the nitrogen gas supplied in a circumferential direction to flow, and a plurality of injection holes communicating with the hole to inject the supplied nitrogen gas into the flanged pipes. The injection holes are formed at the position protruding from the inner surface of one of the flanged pipes to inject nitrogen gas in the flow direction of reaction by-products.
    • 本发明涉及一种用于半导体制造设备或LCD制造设备的氮气注入装置,其可以简单地制造并且因此降低制造成本,并且能够使氮气注入方向对应于反应副产物的流动方向 从而有效地注入氮气,而不会干扰反应副产物的流动。 氮气注入装置包括:一对具有凸缘的凸缘管; 连接在一起的法兰管的内壁上的环形喷嘴,将氮气供应到法兰管中; 以及连接到喷嘴以供应氮气的氮气供应管线。 注射喷嘴的内部具有使圆周方向供给的氮气流动的孔,以及与该孔连通的多个喷射孔,将供给的氮气注入到凸缘管内。 注射孔形成在从一个法兰管的内表面突出的位置,以在反应副产物的流动方向上注入氮气。
    • 9. 发明申请
    • COMPOSITION FOR A TEXTURE-ETCHING SOLUTION, AND TEXTURE-ETCHING METHOD FOR CRYSTALLINE SILICON WAFERS
    • 纹理蚀刻溶液的组合物和结晶硅晶片的纹理蚀刻方法
    • WO2012091395A2
    • 2012-07-05
    • PCT/KR2011010127
    • 2011-12-26
    • DONGWOO FINE CHEM CO LTDHONG HYUNG PYOLEE JAE YUNLEE SEUNG YONGLIM DAE SUNG
    • HONG HYUNG PYOLEE JAE YUNLEE SEUNG YONGLIM DAE SUNG
    • C09K13/02C09K13/00
    • C09K13/02H01L31/02363Y02E10/50
    • The present invention relates to a composition for a texture-etching solution and to a texture-etching method for crystalline silicon wafers. More particularly, the present invention relates to a composition for a texture-etching solution and to a texture-etching method for crystalline silicon wafers, wherein the composition comprises: an alkali compound; a cyclic compound; at least one surfactant selected from the group consisting of a polyoxyethylene (POE) compound, a polyoxypropylene (POP) compound, and a copolymer thereof; and water. Thus, according to the present invention, deviations in the quality of the texture of the surface of a crystalline silicon wafer can be minimized so as to improve the uniformity of the texture structure and maximize the amount of absorbed sunlight, increase efficiency by lowering light reflectivity, significantly reduce consumption by increasing the number of sheets to be processed, and increase productivity and provide high economic feasibility since it is unnecessary to additionally feed in an etchant component during the texture-forming process.
    • 本发明涉及用于纹理蚀刻溶液的组合物和用于晶体硅晶片的纹理蚀刻方法。 更具体地说,本发明涉及用于纹理蚀刻溶液的组合物和用于晶体硅晶片的纹理蚀刻方法,其中所述组合物包含:碱性化合物; 环状化合物; 至少一种选自聚氧乙烯(POE)化合物,聚氧丙烯(POP)化合物及其共聚物的表面活性剂; 和水。 因此,根据本发明,可以使晶体硅晶片的表面纹理质量的偏差最小化,以便改善纹理结构的均匀性并使吸收的太阳光量最大化,通过降低光反射率来提高效率 ,通过增加待加工片材的数量来显着减少消耗,并且由于在纹理形成过程中不需要另外供应蚀刻剂组分,所以增加了生产率并提供了高经济可行性。