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1. 发明申请

WO2012144733A3 TEXTURE-ETCHANT COMPOSITION FOR A CRYSTALLINE SILICON WAFER, AND TEXTURE-ETCHING METHOD 审中-公开
标题翻译：用于晶体硅水晶的纹理蚀刻组合物和纹理蚀刻方法
公开(公告)号：WO2012144733A3
公开(公告)日：2012-12-20
申请号：PCT/KR2012001685
申请日：2012-03-08
申请人： DONGWOO FINE CHEM CO LTD , HONG HYUNG PYO , LEE JAE YUN , PARK MYUN KYU
发明人： HONG HYUNG PYO , LEE JAE YUN , PARK MYUN KYU
IPC分类号： C09K13/02 , H01L21/306
CPC分类号： C09K13/02
摘要： The present invention relates to a texture-etchant composition for a crystalline silicon wafer, and to a texture-etching method. More particularly, the present invention relates to a texture-etchant composition for a crystalline silicon wafer and to a texture-etchant method, the composition comprising: an alkali compound; a cyclic compound to which a functional group including a C2-C6 alkene group is attached and which contains a nitrogen atom; and the remainder being water. The composition can enable the formation of a micro-pyramid, the shape of which is different from the conventional shape, by adjusting an etching rate with respect to a silicon crystalline direction, and can further increase light efficiency by maximizing the amount of sunlight absorbed and significantly reducing the reflectance of light by improving texture uniformity.
摘要翻译：本发明涉及结晶硅晶片的纹理蚀刻剂组合物和纹理蚀刻方法。更具体地说，本发明涉及一种用于晶体硅晶片的纹理蚀刻剂组合物和一种纹理蚀刻剂方法，该组合物包含：碱性化合物; 包含C2-C6烯烃基的官能团并含有氮原子的环状化合物; 剩下的是水。通过调整相对于硅晶体方向的蚀刻速度，可以形成其形状与常规形状不同的微金字塔，并且可以通过最大化吸收的阳光的量来进一步提高光效率，通过改善纹理均匀性来显着降低光的反射率。

2. 发明申请

WO2011031028A3 RESIST STRIPPER COMPOSITION FOR FORMING COPPER-BASED WIRING 审中-公开
标题翻译：用于形成基于铜的接线的耐腐蚀剥离组合物
公开(公告)号：WO2011031028A3
公开(公告)日：2011-07-07
申请号：PCT/KR2010005854
申请日：2010-09-09
申请人： DONGWOO FINE CHEM CO LTD , HONG HUN-PYO , HONG HYUNG-PYO , KIM TAE-HEE , LEE SEUNG-YONG , KIM BYOUNG-MOOK
发明人： HONG HUN-PYO , HONG HYUNG-PYO , KIM TAE-HEE , LEE SEUNG-YONG , KIM BYOUNG-MOOK
IPC分类号： G03F7/42 , H01L21/306
CPC分类号： H01L21/31133 , G03F7/425
摘要： Disclosed is a resist stripper composition for forming copper-based wiring, which uses a compound containing sulfone and/or sulfine and/or an ester as the stripper and which can effectively prevent the corrosion of a conductive metal layer of copper or copper alloy wiring and an insulating layer of silicon oxide or silicon nitride which are disposed under the resist, even without the use of isopropanol as an intermediate cleaner, and also can cleanly remove the deteriorated and/or cured resist even at low temperature in a short period of time.
摘要翻译：公开了一种用于形成铜基布线的抗蚀剂剥离组合物，其使用含有砜和/或亚硫酸盐和/或酯作为剥离剂的化合物，并且可以有效地防止铜或铜合金布线的导电金属层的腐蚀，即使不使用异丙醇作为中间清洁剂，也可以在短时间内在低温下清洁地除去劣化的和/或固化的抗蚀剂，这种氧化硅或氮化硅的绝缘层设置在抗蚀剂下方。

3. 发明申请

WO2011031028A2 RESIST STRIPPER COMPOSITION FOR FORMING COPPER-BASED WIRING 审中-公开
标题翻译：用于形成铜基布线的电阻剥离剂组合物
公开(公告)号：WO2011031028A2
公开(公告)日：2011-03-17
申请号：PCT/KR2010/005854
申请日：2010-09-09
申请人： DONGWOO FINE-CHEM CO., LTD. , HONG, Hun-Pyo , HONG, Hyung-Pyo , KIM, Tae-Hee , LEE, Seung-Yong , KIM, Byoung-Mook
发明人： HONG, Hun-Pyo , HONG, Hyung-Pyo , KIM, Tae-Hee , LEE, Seung-Yong , KIM, Byoung-Mook
IPC分类号： G03F7/42 , H01L21/306
CPC分类号： H01L21/31133 , G03F7/425
摘要： Disclosed is a resist stripper composition for forming copper-based wiring, which uses a compound containing sulfone and/or sulfine and/or an ester as the stripper and which can effectively prevent the corrosion of a conductive metal layer of copper or copper alloy wiring and an insulating layer of silicon oxide or silicon nitride which are disposed under the resist, even without the use of isopropanol as an intermediate cleaner, and also can cleanly remove the deteriorated and/or cured resist even at low temperature in a short period of time.
摘要翻译：公开了一种用于形成铜基布线的抗蚀剂剥离剂组合物，其使用含有砜和/或亚磺酸和/或酯的化合物作为剥离剂并且能够有效地防止导电金属的腐蚀即使在不使用异丙醇作为中间清洁剂的情况下也设置在抗蚀剂下方的铜或铜合金布线层以及氧化硅或氮化硅绝缘层，并且即使在低的情况下也可以清洁地去除劣化和/或固化的抗蚀剂温度在短时间内。

4. 发明申请

WO2013002502A3 TEXTURE ETCHANT COMPOSITION FOR CRYSTALLINE SILICON WAFER AND TEXTURE ETCHING METHOD THEREOF 审中-公开
标题翻译：结晶硅晶片纹理蚀刻剂组合物及其纹理蚀刻方法
公开(公告)号：WO2013002502A3
公开(公告)日：2013-04-11
申请号：PCT/KR2012004786
申请日：2012-06-18
申请人： DONGWOO FINE CHEM CO LTD , HONG HYUNG PYO , PARK MYUN KYU , LEE JAE YOUN
发明人： HONG HYUNG PYO , PARK MYUN KYU , LEE JAE YOUN
IPC分类号： C09K13/02 , C23F1/24 , H01L21/306
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： The present invention relates to a texture etchant composition for a crystalline silicon wafer and a texture etching method thereof, and more specifically to a texture etchant composition for a crystalline silicon wafer, which is capable of maximizing the absorbed amount of sunlight by including the optimal amount of alkali compounds, cyclic compounds, polysaccharides and residual water, improving texture uniformity according to a position on the surface of the crystalline silicon wafer, improving optical efficiency by reducing light reflectivity, and increasing the number of processed wafers according to the amount used per unit, and a texture etching method thereof.
摘要翻译：晶体硅晶片的纹理蚀刻剂组合物及其纹理蚀刻方法技术领域本发明涉及晶体硅晶片的纹理蚀刻剂组合物及其纹理蚀刻方法，并且更具体地涉及晶体硅晶片的纹理蚀刻剂组合物，其能够通过包括最佳量的碱性化合物，环状化合物，多糖类和残留水，根据晶体硅晶片表面的位置改善纹理均匀性，通过减少光反射率来提高光学效率，并且根据每单位使用的量增加处理后的晶片的数量以及其纹理蚀刻方法。

5. 发明申请

WO2012091395A3 COMPOSITION FOR A TEXTURE-ETCHING SOLUTION, AND TEXTURE-ETCHING METHOD FOR CRYSTALLINE SILICON WAFERS 审中-公开
公开(公告)号：WO2012091395A3
公开(公告)日：2012-12-06
申请号：PCT/KR2011010127
申请日：2011-12-26
申请人： DONGWOO FINE CHEM CO LTD , HONG HYUNG PYO , LEE JAE YUN , LEE SEUNG YONG , LIM DAE SUNG
发明人： HONG HYUNG PYO , LEE JAE YUN , LEE SEUNG YONG , LIM DAE SUNG
IPC分类号： C09K13/02 , C09K13/00
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： The present invention relates to a composition for a texture-etching solution and to a texture-etching method for crystalline silicon wafers. More particularly, the present invention relates to a composition for a texture-etching solution and to a texture-etching method for crystalline silicon wafers, wherein the composition comprises: an alkali compound; a cyclic compound; at least one surfactant selected from the group consisting of a polyoxyethylene (POE) compound, a polyoxypropylene (POP) compound, and a copolymer thereof; and water. Thus, according to the present invention, deviations in the quality of the texture of the surface of a crystalline silicon wafer can be minimized so as to improve the uniformity of the texture structure and maximize the amount of absorbed sunlight, increase efficiency by lowering light reflectivity, significantly reduce consumption by increasing the number of sheets to be processed, and increase productivity and provide high economic feasibility since it is unnecessary to additionally feed in an etchant component during the texture-forming process.

6. 发明申请

WO2012021026A3 TEXTURE-ETCHANT COMPOSITION FOR CRYSTALLINE SILICON WAFER AND METHOD FOR TEXTURE-ETCHING (1) 审中-公开
标题翻译：用于结晶硅晶片的纹理蚀刻剂组合物和纹理蚀刻方法（1）
公开(公告)号：WO2012021026A3
公开(公告)日：2012-05-03
申请号：PCT/KR2011005949
申请日：2011-08-12
申请人： DONGWOO FINE CHEM CO LTD , HONG HYUNG-PYO , LEE JAE-YOUN , LIM DAE-SUNG
发明人： HONG HYUNG-PYO , LEE JAE-YOUN , LIM DAE-SUNG
IPC分类号： C23F1/32 , C23F1/40 , H01L21/306
CPC分类号： H01L21/302 , C09K13/00 , C09K13/02 , C09K13/06 , C09K13/08 , H01L31/02363 , H01L31/182 , H01L31/1824 , Y02E10/50
摘要： The present invention relates to a texture-etchant composition for a crystalline silicon wafer to form a micro-pyramidal structure that can maximize the light absorption on the surface of the crystalline silicon, and a method for etching the crystalline silicon wafer using same, in a crystalline silicon wafer texture-etching composition comprising (A) an alkali compound, (B) a cyclic compound having a boiling point of 100? or above,(C) a compound having silica, and (D) water, and a method for etching a crystalline silicon wafer using same.
摘要翻译：本发明涉及一种用于晶体硅晶片的纹理 - 蚀刻剂组合物，以形成能够使晶体硅表面上的光吸收最大化的微棱锥体结构，以及使用该晶体硅晶片的晶体硅晶片的蚀刻方法，（A）碱性化合物，（B）沸点为100℃以下的环状化合物的结晶硅晶片结构 - 蚀刻用组合物，（C）具有二氧化硅的化合物和（D）水，以及使用该化合物蚀刻晶体硅晶片的方法。

7. 发明申请

WO2011014027A3 CLEANING FLUID COMPOSITION AND A CLEANING METHOD FOR A PANEL USING THE SAME 审中-公开
标题翻译：清洁流体组合物和用于使用该组合物的面板的清洁方法
公开(公告)号：WO2011014027A3
公开(公告)日：2011-06-16
申请号：PCT/KR2010005002
申请日：2010-07-29
申请人： DONGWOO FINE CHEM CO LTD , HONG HYUNG-PYO , HONG HUN-PYO , KIM TAE-HEE , PARK MYUN-KYU , YOON HYO-JOONG , KIM BYOUNG-MOOK
发明人： HONG HYUNG-PYO , HONG HUN-PYO , KIM TAE-HEE , PARK MYUN-KYU , YOON HYO-JOONG , KIM BYOUNG-MOOK
IPC分类号： C11D7/32 , C11D3/28
CPC分类号： C11D3/28 , C11D7/3281
摘要： The present invention relates to a cleaning fluid composition for flat-panel display devices, comprising: (a) between 0.05 and 5 wt.% of an amine compound; (b) from 0.01 to 10 wt.% of an additive comprising one or two or more components selected from the group consisting of azole-based compounds, alkanol amine salts and reducing agents; and (c) a balance of water.
摘要翻译：本发明涉及一种用于平板显示装置的清洁液组合物，其包含：（a）0.05至5重量％的胺化合物; （b）0.01-10重量％的添加剂，所述添加剂包含一种或两种或更多种选自唑类化合物，链烷醇胺盐和还原剂的组分; 和（c）余量的水。

8. 发明申请

WO2013058477A3 TEXTURE ETCHING FLUID COMPOSITION AND TEXTURE ETCHING METHOD FOR CRYSTALLINE SILICON WAFERS 审中-公开
标题翻译：晶体蚀刻液晶组合物和晶体蚀刻方法
公开(公告)号：WO2013058477A3
公开(公告)日：2013-06-06
申请号：PCT/KR2012007130
申请日：2012-09-05
申请人： DONGWOO FINE CHEM CO LTD , HONG HYUNG PYO , LEE JAE YOUN , PARK MYUN KYU , LIM DAE SUNG
发明人： HONG HYUNG PYO , LEE JAE YOUN , PARK MYUN KYU , LIM DAE SUNG
IPC分类号： C09K13/00 , H01L31/18
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： The present invention relates to a texture etching fluid composition and to a texture etching method for crystalline silicon wafers, and, more specifically, relates to a texture etching fluid composition and a texture etching method for crystalline silicon wafers, whereby, in the context of forming a micro-pyramid structure on the surface of a crystalline silicon wafer, it is possible to form pyramids having a specific structure able to reduce reflectance and to increase optical efficiency by minimising position-related discrepancies in textual quality, by including a macromolecule resulting from the polymerisation of monomers substituted with a cyclic compound having from 4 to 10 carbon atoms and comprising a nitrogen atom.
摘要翻译：本发明涉及纹理蚀刻流体组合物和结晶硅晶片的纹理蚀刻方法，更具体地，涉及晶体硅晶片的纹理蚀刻流体组合物和纹理蚀刻方法，其中在形成在结晶硅晶片的表面上的微金字塔结构，可以通过包括由于晶体硅晶片产生的大分子而形成具有能够降低反射率的特定结构的金字塔，并通过最小化位置相关的文本质量差异来提高光学效率被具有4至10个碳原子并含有氮原子的环状化合物取代的单体的聚合。

9. 发明申请

WO2013002502A2 TEXTURE ETCHANT COMPOSITION FOR CRYSTALLINE SILICON WAFER AND TEXTURE ETCHING METHOD THEREOF 审中-公开
公开(公告)号：WO2013002502A2
公开(公告)日：2013-01-03
申请号：PCT/KR2012004786
申请日：2012-06-18
申请人： DONGWOO FINE CHEM CO LTD , HONG HYUNG PYO , PARK MYUN KYU , LEE JAE YOUN
发明人： HONG HYUNG PYO , PARK MYUN KYU , LEE JAE YOUN
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： The present invention relates to a texture etchant composition for a crystalline silicon wafer and a texture etching method thereof, and more specifically to a texture etchant composition for a crystalline silicon wafer, which is capable of maximizing the absorbed amount of sunlight by including the optimal amount of alkali compounds, cyclic compounds, polysaccharides and residual water, improving texture uniformity according to a position on the surface of the crystalline silicon wafer, improving optical efficiency by reducing light reflectivity, and increasing the number of processed wafers according to the amount used per unit, and a texture etching method thereof.

10. 发明申请

WO2011052941A2 ETCHING COMPOSITION FOR TEXTURING CRYSTALLINE SILICON-BASED WAFER 审中-公开
标题翻译：用于纹理晶体硅基陶瓷的蚀刻组合物
公开(公告)号：WO2011052941A2
公开(公告)日：2011-05-05
申请号：PCT/KR2010/007323
申请日：2010-10-25
申请人： DONGWOO FINE-CHEM CO., LTD. , Hong, Hyung-Pyo , Lee, Jae-Youn , Lim, Dae-Sung , Lee, Seung-Yong
发明人： Hong, Hyung-Pyo , Lee, Jae-Youn , Lim, Dae-Sung , Lee, Seung-Yong
IPC分类号： C09K13/02
CPC分类号： C09K13/02 , H01L31/02363 , Y02E10/50
摘要： Disclosed is an etching composition for texturing a crystalline silicon-based wafer, including (A) 0.1 ~ 20 wt% of at least one alkaline compound, (B) 0.1 ~ 50 wt% of at least one cyclic compound having a boiling point of 100 ~ 400°C, and (C) the remainder of water, based on the total weight of the composition.
摘要翻译：公开了用于纹理化晶体硅基晶片的蚀刻组合物，其包含（A）0.1〜20重量％的至少一种碱性化合物，（B）0.1〜50重量％的至少一种沸点为100的环状化合物〜400℃，和（C）剩余的水，基于组合物的总重量。

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