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    • 1. 发明申请
    • THIN FILM VAPOR DEPOSITION METHOD
    • 薄膜蒸气沉积法
    • WO2012102495A2
    • 2012-08-02
    • PCT/KR2012000075
    • 2012-01-04
    • WONIK IPS CO LTDPARK YOUNG-HOONYOON WON-JUNLEE KI-HOON
    • PARK YOUNG-HOONYOON WON-JUNLEE KI-HOON
    • H01L21/205
    • C23C16/45551
    • Provided is a thin film vapor deposition method capable of vapor depositing a thin film with increased productivity over a conventional ALD or cyclic CVD. According to the present invention, the thin film vapor deposition method uses a thin film vapor deposition apparatus comprising: a substrate support portion comprising a plurality of substrate mounting portions for mounting substrates and provided inside a reactor; and a gas spraying portion for supplying one or more types of gases to the substrate support portion, provided at the upper portion of the substrate support portion. The thin film vapor deposition method comprises the following steps: (a) mounting a plurality of substrates on the substrate support portion; (b) supplying a raw material gas and a reaction gas to be reacted with the raw material gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion to vapor deposit a thin film on the substrates; (c) supplying an inert gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion, for purging; and (d) supplying a post-treatment gas on the substrate support portion through the gas spraying portion while relatively rotating the substrate support portion and the gas spraying portion, for post-treatment.
    • 本发明提供一种薄膜蒸镀法,其能够以比以往的ALD或循环CVD更高的生产率蒸镀薄膜。 根据本发明,所述薄膜气相沉积方法使用薄膜气相沉积设备,所述薄膜气相沉积设备包括:基板支撑部分,其包括用于安装基板并设置在反应器内部的多个基板安装部分; 以及气体喷射部分,用于将一种或多种类型的气体供应到设置在基板支撑部分的上部的基板支撑部分。 薄膜气相沉积方法包括以下步骤:(a)将多个基板安装在基板支撑部分上; (b)通过气体喷射部分在衬底支撑部分上供应要与原料气体反应的原料气体和反应气体,同时相对旋转衬底支撑部分和气体喷射部分以在衬底支撑部分上气相沉积薄膜 基板; (c)通过气体喷射部分在衬底支撑部分上提供惰性气体,同时使衬底支撑部分和气体喷射部分相对旋转,以便吹扫; (d)通过气体喷射部分在基板支撑部分上提供后处理气体,同时使基板支撑部分和气体喷射部分相对旋转,以进行后处理。
    • 6. 发明申请
    • SYSTEM AND METHOD FOR MANAGING A DISTRIBUTION NETWORK OF INVESTMENT MONEY
    • 用于管理投资货币分配网络的系统和方法
    • WO2012033325A2
    • 2012-03-15
    • PCT/KR2011006585
    • 2011-09-06
    • SAMSUNG SECURITIES CO LTDLEE KI HOONBAE JIN HEUNG
    • LEE KI HOONBAE JIN HEUNG
    • G06Q40/00
    • G06Q20/10G06Q40/06
    • The present invention relates to a system and method for managing investment money. According to the present invention, a plurality of modules are systematically connected and disposed in a communication pipeline of an IM (investment money) management backbone server. Thus, when a situation occurs in which IM rebalancing is required, the system and method of the present invention involve inducing a plurality of units which are owned by a customer to be tightly connected together like a mesh so as to form an IM rebalancing network. The system and method of the present invention enable a customer or IM management company to simplify and diversify an IP rebalancing network or IP portfolio in various patterns, thereby effectively increasing economic profits.
    • 用于管理投资资金的系统和方法 根据本发明,多个模块系统地连接并设置在IM(投资资金)管理主干服务器的通信管道中。 因此,当需要进行IM重新平衡的情况时,本发明的系统和方法涉及诱导客户拥有的多个单元像网格一样紧密地连接在一起,从而形成IM重新平衡网络。 本发明的系统和方法使得客户或IM管理公司能够以各种模式简化和多样化IP再平衡网络或IP投资组合,从而有效地增加经济利润。
    • 8. 发明申请
    • METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR
    • 制造半导体的方法和装置
    • WO2006059851A1
    • 2006-06-08
    • PCT/KR2005/004012
    • 2005-11-28
    • IPS LTD.LEE, Ki HoonPARK, Young HoonLEE, Sahng KyooSEO, Tae WookCHANG, Ho Seung
    • LEE, Ki HoonPARK, Young HoonLEE, Sahng KyooSEO, Tae WookCHANG, Ho Seung
    • H01L21/31
    • G03F7/091H01L21/0276H01L21/3146Y10S438/952
    • Disclosed herein is a method and apparatus for manufacturing a semiconductor, suitable for use in the formation of an amorphous carbon anti-reflective film having high selectivity by increasing etching resistance while an extinction coefficient associated with anti-reflectivity is maintained low. The method of manufacturing a semiconductor for the formation of an amorphous carbon anti-reflective film according to this invention includes (a) depositing an amorphous organic carbon film on the bottom film of a substrate; and (b) adding a compound containing nitrogen (N), fluorine (F) or silicon (Si) to the surface or the inner portion of the amorphous organic carbon film, to deposit a thin film of a-C:N, a-C:F or a-C:Si, having high selectivity, to a thickness from ones to tens of nm using an atomic layer deposition process. Therefore, an ultra-thin film having etching resistance is formed on or in the amorphous carbon anti-reflective film and the density and compressive stress of the amorphous carbon anti-reflective film are increased, thus increasing etching selectivity.
    • 本文公开了一种用于制造半导体的方法和装置,其适用于形成具有高选择性的无定形碳抗反射膜,通过提高耐蚀性,同时防反射率相关的消光系数保持较低。 根据本发明的用于形成无定形碳抗反射膜的半导体的制造方法包括(a)在基底的底膜上沉积无定形有机碳膜; 和(b)向无定形有机碳膜的表面或内部添加含有氮(N),氟(F)或硅(Si)的化合物,沉积a:N,aC:F或 aC:Si,具有高选择性,使用原子层沉积工艺达到一至几十nm的厚度。 因此,在非晶碳抗反射膜上或其中形成具有耐腐蚀性的超薄膜,并且提高了无定形碳抗反射膜的密度和压缩应力,从而提高了蚀刻选择性。