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1. 发明申请

WO2008057996A3 PRINTABILITY VERIFICATION BY PROGRESSIVE MODELING ACCURACY 审中-公开
标题翻译：通过逐步建模准确性进行可打印性验证
公开(公告)号：WO2008057996A3
公开(公告)日：2008-07-10
申请号：PCT/US2007083441
申请日：2007-11-02
申请人： IBM , LAI KAFAI , ROSENBLUTH ALAN E , GALLATIN GREGG M , MUKHERJEE MAHARAJ
发明人： LAI KAFAI , ROSENBLUTH ALAN E , GALLATIN GREGG M , MUKHERJEE MAHARAJ
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A fast method of verifying a lithographic mask design is provided wherein catastrophic errors (432) are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models (411), including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side- lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.
摘要翻译：提供了验证光刻掩模设计的快速方法，其中通过使用包括光学和抗蚀剂模型的逐渐更准确的图像模型（411）迭代模拟和验证掩模布局的图像来识别灾难性错误（432）。逐渐精确的光学模型包括提供连续影响较小的SOCS内核。构建对应的抗蚀剂模型，其可以仅包括对应于光学模型的SOCS内核项，或者可以包括不同影响范围的图像特征项。与过量光相关的错误，例如桥接，旁瓣或SRAF打印错误，优选地用明场模拟来识别，而与光线不足有关的错误例如颈缩或线端缩短覆盖错误优选地用暗场识别模拟。

2. 发明申请

WO2010133422A3 DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS USING SEGMENTED PREPATTERNS 审中-公开
标题翻译：使用SEGMENTED PREPATTERNS的嵌段共聚物的方向自组装
公开(公告)号：WO2010133422A3
公开(公告)日：2011-05-12
申请号：PCT/EP2010055412
申请日：2010-04-23
申请人： IBM , IBM UK , CHENG JOY , NA YOUNG-HYE , LAI KAFAI , RETTNER CHARLES THOMAS , SANDERS DANIEL PAUL , LI WAI-KIN
发明人： CHENG JOY , NA YOUNG-HYE , LAI KAFAI , RETTNER CHARLES THOMAS , SANDERS DANIEL PAUL , LI WAI-KIN
IPC分类号： B81C1/00
CPC分类号： B81C1/00031 , B81C1/00404 , B81C2201/0149 , H01L21/0337 , H01L21/31144
摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.
摘要翻译：例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。例如，开口的横截面可以由重叠的圆形区域给出。侧壁在各个点处相邻，在那里它们限定突起。将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。在开口中形成离散的分离的区域，其被去除以形成孔，其可以被转移到下面的基底中。这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

3. 发明申请

WO2010133422A2 DIRECTED SELF-ASSEMBLY OF BLOCK COPOLYMERS USING SEGMENTED PREPATTERNS 审中-公开
标题翻译：使用SEGMENTED PREPATTERNS的嵌段共聚物的方向自组装
公开(公告)号：WO2010133422A2
公开(公告)日：2010-11-25
申请号：PCT/EP2010/055412
申请日：2010-04-23
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , IBM UNITED KINGDOM LIMITED , CHENG, Joy , NA, Young-Hye , LAI, Kafai , RETTNER, Charles, Thomas , SANDERS, Daniel, Paul , LI, Wai-Kin
发明人： CHENG, Joy , NA, Young-Hye , LAI, Kafai , RETTNER, Charles, Thomas , SANDERS, Daniel, Paul , LI, Wai-Kin
IPC分类号： B81C1/00
CPC分类号： B81C1/00031 , B81C1/00404 , B81C2201/0149 , H01L21/0337 , H01L21/31144
摘要： An opening in a substrate is formed, e.g., using optical lithography, with the opening having sidewalls whose cross section is given by segments that are contoured and convex. The cross section of the opening may be given by overlapping circular regions, for example. The sidewalls adjoin at various points, where they define protrusions. A layer of polymer including a block copolymer is applied over the opening and the substrate, and allowed to self-assemble. Discrete, segregated domains form in the opening, which are removed to form holes, which can be transferred into the underlying substrate. The positions of these domains and their corresponding holes are directed to predetermined positions by the sidewalls and their associated protrusions. The distances separating these holes may be greater or less than what they would be if the block copolymer (and any additives) were to self-assemble in the absence of any sidewalls.
摘要翻译：例如使用光刻法形成衬底中的开口，其中开口具有侧壁，其横截面由轮廓和凸形的部分给出。例如，开口的横截面可以由重叠的圆形区域给出。侧壁在各个点处相邻，在那里它们限定突起。将包含嵌段共聚物的聚合物层施加在开口和基底上，并允许自组装。在开口中形成离散的分离的区域，其被去除以形成孔，其可以被转移到下面的基底中。这些区域及其对应的孔的位置通过侧壁及其相关联的突起被引导到预定位置。分离这些孔的距离可以大于或小于如果嵌段共聚物（和任何添加剂）在没有任何侧壁的情况下自组装就会发生。

4. 发明申请

WO2010080735A1 A FAST AND ACCURATE METHOD TO SIMULATE INTERMEDIATE RANGE FLARE EFFECTS 审中-公开
标题翻译：一种用于模拟中间范围的效应的快速和准确的方法
公开(公告)号：WO2010080735A1
公开(公告)日：2010-07-15
申请号：PCT/US2010/020059
申请日：2010-01-05
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , MUKHERJEE, Maharaj , CULP, James, A. , LAI, Kafai , MANSFIELD, Scott, M. , ROSENBLUTH, Alan, E.
发明人： MUKHERJEE, Maharaj , CULP, James, A. , LAI, Kafai , MANSFIELD, Scott, M. , ROSENBLUTH, Alan, E.
IPC分类号： G06F17/50
CPC分类号： G03F1/36 , G03F1/70
摘要： A method is provided for modeling lithographic processes in the design of photomasks for the manufacture of semiconductor integrated circuits, and more particularly for simulating intermediate range flare effects. For a region of influence (ROI) from first ROI1 of about 5λ/NA to distance ROI2 when the point spread function has a slope that is slowly varying according to a predetermined criterion, then mask shapes at least within the distance range from ROM to ROI2 are smoothed prior to computing the SOCS convolutions. The method provides a fast method for simulating intermediate range flare effects with sufficient accuracy.
摘要翻译：提供了一种用于在用于制造半导体集成电路的光掩模的设计中对光刻工艺进行建模的方法，更具体地说，用于模拟中间范围闪光效应。对于当点扩散函数具有根据预定标准缓慢变化的斜率时，从大约5λ/ NA到距离ROI2的第一ROI1的影响区域（ROI），至少在从ROM到在计算SOCS卷积之前，ROI2被平滑。该方法提供了一种用于以足够的精度模拟中等范围闪光效果的快速方法。

5. 发明申请

WO2008057996A2 PRINTABILITY VERIFICATION BY PROGRESSIVE MODELING ACCURACY 审中-公开
标题翻译：可靠性验证通过逐步建模精度
公开(公告)号：WO2008057996A2
公开(公告)日：2008-05-15
申请号：PCT/US2007/083441
申请日：2007-11-02
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , LAI, Kafai , ROSENBLUTH, Alan, E. , GALLATIN, Gregg, M. , MUKHERJEE, Maharaj
发明人： LAI, Kafai , ROSENBLUTH, Alan, E. , GALLATIN, Gregg, M. , MUKHERJEE, Maharaj
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A fast method of verifying a lithographic mask design is provided wherein catastrophic errors (432) are identified by iteratively simulating and verifying images for the mask layout using progressively more accurate image models (411), including optical and resist models. Progressively accurate optical models include SOCS kernels that provide successively less influence. Corresponding resist models are constructed that may include only SOCS kernel terms corresponding to the optical model, or may include image trait terms of varying influence ranges. Errors associated with excessive light, such as bridging, side- lobe or SRAF printing errors, are preferably identified with bright field simulations, while errors associated with insufficient light, such as necking or line-end shortening overlay errors, are preferably identified with dark field simulations.
摘要翻译：提供了一种验证光刻掩模设计的快速方法，其中通过使用逐渐更准确的图像模型（411）迭代地模拟和验证用于掩模布局的图像来识别灾难性错误（432），包括光学和抗蚀剂模型。逐步精确的光学模型包括提供连续影响较小的SOCS内核。构造相应的抗蚀剂模型，其可以仅包括对应于光学模型的SOCS核项，或者可以包括不同影响范围的图像特征项。优选地通过明亮的场模拟来识别与过度的光相关的错误，例如桥接，旁瓣或SRAF打印错误，而与不充分的光相关的错误，例如颈缩或线端缩短覆盖误差，优选地用暗场模拟。

6. 发明申请

WO2004107042A1 METHOD FOR EVALUATING THE EFFECTS OF MULTIPLE EXPOSURE PROCESSES IN LITHOGRAPHY 审中-公开
标题翻译：评估多次曝光过程影响的方法
公开(公告)号：WO2004107042A1
公开(公告)日：2004-12-09
申请号：PCT/US2004/015693
申请日：2004-05-19
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , FONSECA, Carlos, A. , BUKOFSKY, Scott, J. , LAI, Kafai
发明人： FONSECA, Carlos, A. , BUKOFSKY, Scott, J. , LAI, Kafai
IPC分类号： G03C5/00
CPC分类号： G03F7/705 , G03F7/70466 , G03F7/70625 , G03F7/70641
摘要： A method of evaluating process effects of multiple exposure photolithographic processes by first determining a set of expected images for each exposure step or process of the multiple exposure process individually (SET1, SET2) and then obtaining a composite set of images (FINALSET) by sequentially perturbing images from a first or previous exposure step (SET1) by weighted images from the subsequent exposure step (SET2). Preferably, the expected images are determined by simulation in the form of normalized aerial images over a range of defocus for each exposure step, and the weighting factor used is the dose-ratio of the subsequent exposure dose to the prior step exposure dose. The resulting composite set of images may be used to evaluate multiple exposure processes, for example, to provide an estimate of yield for a given budget of dose and focus errors, or alternatively, to provide specifications for tool error budgets required to obtain a target yield.
摘要翻译：一种评估多次曝光光刻处理的处理效果的方法，首先通过单独确定每个曝光步骤或多次曝光处理（SET1，SET2）的每个曝光步骤或处理来确定一组预期图像，然后通过依次扰动获得一组复合图像（FINALSET）来自后续曝光步骤（SET2）的加权图像来自第一或以前的曝光步骤（SET1）的图像。优选地，通过在每个曝光步骤的散焦范围上的归一化空间图像的形式的模拟来确定预期图像，并且所使用的加权因子是随后的曝光剂量与先前阶段曝光剂量的剂量比。所得到的复合图像集合可以用于评估多个曝光过程，例如，为给定的剂量和焦点误差预算提供产量的估计，或者提供用于获得目标产量所需的工具误差预算的规格。

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