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1. 发明申请

WO2011034336A3 DIRECT-DRIVE ELECTRIC EQUIPMENT 审中-公开
标题翻译：直接驱动电动设备
公开(公告)号：WO2011034336A3
公开(公告)日：2011-07-14
申请号：PCT/KR2010006290
申请日：2010-09-15
申请人： BANG DEOK JE , KIM BONG JUN , FERREIRA JAN ABRAHAM , POLINDER HENK
发明人： BANG DEOK JE , KIM BONG JUN , FERREIRA JAN ABRAHAM , POLINDER HENK
IPC分类号： H02K41/02
CPC分类号： F03D9/002 , F03D9/25 , F05B2220/7066 , H02K7/1838 , H02K7/1869 , H02K21/12 , H02K21/24 , H02K41/031 , H02K2201/12 , H02K2201/15 , H02K2213/12 , Y02E10/725 , Y02P70/523
摘要： The present invention relates to direct-drive electric equipment, and to large-scale, high-torque, direct-drive, permanent magnet-type electric equipment, such as wind turbine generators, tidal power generators, and hydropower generators for generating electric power, and motors rotatably driven by external electric power. In particular, it is an aim of the present invention to provide direct-drive, permanent magnet-type electric equipment capable of using less material by means of an optimized configuration to thus lower manufacturing costs, and which is easy to manufacture, transport, install, and maintain and repair. Using the direct-drive electric equipment according to the present invention, manufacturing costs can be reduced by means of maximized torque density and the minimal use of active material, the use of inactive material can be significantly reduced by employing a bearingless system for supporting and guiding a rotating body such as a rotor, and the assembly, operation, transport, installation, and maintenance and repair thereof are easily performed as the equipment has a modularized configuration comprising a plurality of separate modules, each having a rotor, stator, etc.
摘要翻译：本发明涉及直接驱动电力设备，并且涉及用于发电的风力涡轮发电机，潮汐发电机和水力发电机等大型高扭矩直接驱动永磁型电气设备，和由外部电力旋转驱动的电动机。特别是，本发明的一个目的是提供能够通过优化配置使用较少材料的直接驱动永磁体型电子设备，从而降低制造成本，并且易于制造，运输和安装并维护和修理。使用根据本发明的直接驱动式电气设备，通过最大化的转矩密度和最小的活性材料使用可以降低制造成本，通过采用无轴承系统来支撑和引导，可以显着减少非活性材料的使用转子等旋转体，由于设备具有模块化结构，所以能够容易地进行组装，运转，搬运，安装，维护和修理，该模块化结构包括多个分离模块，每个模块具有转子，定子等

2. 发明申请

WO2009045084A3 PHOTO-GATING SWITCH SYSTEM 审中-公开
标题翻译：照相会议开关系统
公开(公告)号：WO2009045084A3
公开(公告)日：2009-05-28
申请号：PCT/KR2008005845
申请日：2008-10-06
申请人： KOREA ELECTRONICS TELECOMM , YUN SUN-JIN , LEE YONG-WOOK , KIM HYUN-TAK , KIM BONG-JUN , LIM JUNGWOOK , CHOI SUNG-YOUL
发明人： YUN SUN-JIN , LEE YONG-WOOK , KIM HYUN-TAK , KIM BONG-JUN , LIM JUNGWOOK , CHOI SUNG-YOUL
IPC分类号： H01L31/10
CPC分类号： H01L27/14603 , H01L27/1464 , H01L31/113
摘要： A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate.
摘要翻译：提供了一种包括形成在衬底上的光敏器件的光电门控开关系统。感光装置可以包括感光层和形成在感光层两端的电极。将光照射到光敏器件的光源被集成在衬底的表面之下。

3. 发明申请

WO2009014348A2 THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME 审中-公开
标题翻译：三端金属绝缘子过渡开关，包括其的开关系统及其金属绝缘体过渡控制方法
公开(公告)号：WO2009014348A2
公开(公告)日：2009-01-29
申请号：PCT/KR2008/004202
申请日：2008-07-18
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , CHOI, Sung-Youl , YUN, Sun-Jin
发明人： KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , CHOI, Sung-Youl , YUN, Sun-Jin
IPC分类号： H01L29/08
CPC分类号： H01L49/003
摘要： Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
摘要翻译：提供了一种三端MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要常规的栅极绝缘层，包括3端子MIT开关的开关系统以及控制3端子MIT的MIT的方法开关。 3端MIT开关包括2端MIT装置，其分别连接到2端MIT装置的每个端子，产生过渡电压的不连续MIT，入口电极和出口电极以及控制电极，其连接到入口电极并且包括与入口电极的外部端子分离的外部端子，其中根据施加到控制电极的电压或电流来控制2端子MIT装置的MIT。开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

4. 发明申请

WO2008018691A1 CIRCUIT FOR CONTINUOUSLY MEASURING DISCONTINUOUS METAL INSULATOR TRANSITION OF MIT ELEMENT AND MIT SENSOR USING THE SAME 审中-公开
标题翻译：用于连续测量不连续金属绝缘子过渡的电路元件和麻省传感器的电路
公开(公告)号：WO2008018691A1
公开(公告)日：2008-02-14
申请号：PCT/KR2007/003268
申请日：2007-07-05
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin , CHOI, Sang-Kuk
发明人： KIM, Hyun-Tak , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin , CHOI, Sang-Kuk
IPC分类号： G01R19/165
CPC分类号： G01R31/2641
摘要： Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.
摘要翻译：提供了一种用于连续测量使用该电路的MIT元件和MIT传感器的不连续金属 - 绝缘体转变（MIT）的电路。该电路包括被测量对象单元，其包括具有在其转变电压下出现的不连续MIT的MIT元件，向待测量对象单元施加预定脉冲电流或电压信号的电源单元，测量MIT元件的不连续MIT的单元，以及控制电源单元和测量单元的微处理器。不连续的MIT测量电路连续测量MIT元件的不连续MIT，因此它可以用作感测外部因素变化的传感器。

5. 发明申请

WO2007089097A1 ABRUPT METAL-INSULATOR TRANSITION DEVICE WITH PARALLEL CONDUCTING LAYERS 审中-公开
标题翻译：具有平行导电层的金属绝缘体过渡装置
公开(公告)号：WO2007089097A1
公开(公告)日：2007-08-09
申请号：PCT/KR2007/000526
申请日：2007-01-31
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , CHAE, Byung-Gyu , KANG, Kwang-Yong , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin
发明人： KIM, Hyun-Tak , CHAE, Byung-Gyu , KANG, Kwang-Yong , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin
IPC分类号： H01L29/768
CPC分类号： H01L49/003
摘要： An abrupt MIT (metal-insulator transition) device with parallel conducting layers is provided. The abrupt MIT device includes a first electrode disposed on a certain region of a substrate, a second electrode disposed so as to be spaced a predetermined distance apart from the first electrode, and at least one conducting layer electrically connecting the first electrode with the second electrode and having a width that allows the entire region of the conducting layer to be transformed into a metal layer due to an MIT. Due to this configuration, deterioration of the conducting layer, which is typically caused by current flowing through the conducting layer, is less likely to occur.
摘要翻译：提供了具有平行导电层的突发MIT（金属 - 绝缘体转变）器件。突变MIT装置包括设置在基板的某个区域上的第一电极，设置成与第一电极隔开预定距离的第二电极，以及将第一电极与第二电极电连接的至少一个导电层并且具有允许导电层的整个区域由于MIT而被转变成金属层的宽度。由于这种构造，通常由电流流过导电层引起的导电层的劣化不太可能发生。

6. 发明申请

WO2012002764A3 METAL-SEMICONDUCTOR CONVERGENCE ELECTRIC CIRCUIT DEVICES AND ELECTRIC CIRCUIT SYSTEMS USING THE SAME 审中-公开
公开(公告)号：WO2012002764A3
公开(公告)日：2012-01-05
申请号：PCT/KR2011/004838
申请日：2011-07-01
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , KIM, Bong Jun
发明人： KIM, Hyun-Tak , KIM, Bong Jun
IPC分类号： H01L23/36
摘要： Provided are metal-semiconductor convergence electric circuit devices. The device includes a semiconductor device, a metal resistor exhibiting resistance increased with an increase in temperature thereof, and an interconnection line connecting the semiconductor device with the metal resistor in series and having a resistance lower than that of the metal resistor. The semiconductor device is configured to exhibit resistance decreased with an increase in temperature thereof and compensate the resistance increase of the metal resistor.

7. 发明申请

WO2009107993A3 HIGH CURRENT CONTROL CIRCUIT INCLUDING METAL-INSULATOR TRANSITION DEVICE, AND SYSTEM INCLUDING THE HIGH CURRENT CONTROL CIRCUIT 审中-公开
标题翻译：包括金属绝缘子过渡装置的高电流控制电路和包括高电流控制电路的系统
公开(公告)号：WO2009107993A3
公开(公告)日：2010-02-04
申请号：PCT/KR2009000932
申请日：2009-02-27
申请人： KOREA ELECTRONICS TELECOMM , KIM HYUN-TAK , KIM BONG-JUN , YUN SUN-JIN
发明人： KIM HYUN-TAK , KIM BONG-JUN , YUN SUN-JIN
IPC分类号： H01L25/16 , H01L27/06 , H01L49/00
CPC分类号： H01L21/8222 , H01L23/62 , H01L27/067 , H01L27/082 , H01L2924/0002 , H03K17/14 , H03K17/567 , H01L2924/00
摘要： Provided are a high current control circuit including a metal-insulator transition (MIT) device (100) and a system including the high current control circuit so that a high current can be controlled and switched by the small-size high current control citcuit, and a heat generation problem can be solved. The high current control circuit includes the MIT device connected in a current driving device (500) and undergoing an abrupt MIT at a predetermined transition voltage; and a switching control transistor (400) connected between the current driving device and the MIT device and controlling on-off switching of the MIT device. By including the metal-insulator transition (MlT) device, the high current control circuit switches a high current that is input to or output from the current driving device. Also, the MIT device constitutes a MIT-TR composite device (1000) with a heat-preventing transistor (200) which prevents heat generation and is connected on the MIT device.
摘要翻译：提供了包括金属 - 绝缘体转变（MIT）器件（100）的高电流控制电路和包括高电流控制电路的系统，使得可以通过小型高电流控制电路控制和切换高电流，以及可以解决发热问题。高电流控制电路包括连接在电流驱动装置（500）中并在预定转换电压下经历突变MIT的MIT装置; 以及连接在电流驱动装置和MIT装置之间并控制MIT装置的开关切换的开关控制晶体管（400）。通过包括金属 - 绝缘体转变（MlT）器件，高电流控制电路切换输入到当前驱动装置或从当前驱动装置输出的高电流。此外，MIT装置构成具有防止热产生并连接在MIT装置上的防热晶体管（200）的MIT-TR复合装置（1000）。

8. 发明申请

WO2009107948A3 CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT 审中-公开
标题翻译：用于防止金属绝缘体转变（MIT）装置的自加热的电路和用于制造相同电路的集成装置的方法
公开(公告)号：WO2009107948A3
公开(公告)日：2010-02-04
申请号：PCT/KR2009000834
申请日：2009-02-23
申请人： KOREA ELECTRONICS TELECOMM , KIM HYUN-TAK , KIM BONG-JUN , YUN SUN-JIN , KIM DAE-YONG
发明人： KIM HYUN-TAK , KIM BONG-JUN , YUN SUN-JIN , KIM DAE-YONG
IPC分类号： H01L25/16 , H01L27/06 , H01L49/00
CPC分类号： H01L27/067 , H01L49/003
摘要： Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device (100) and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device (100) that generates an abrupt MIT at a temperature equa to or greater than a critical temperature and is connected to a current driving device (500) to control the flow of current driving device, a transistor (200) that is connected to the MIT device (100) to control the self-heating of the MIT device after generating the MIT in the MIT device and a resistor (300) connected to the MIT device and the transistor.
摘要翻译：提供了能够解决MIT装置（100）的自身加热问题的MIT装置自发热防止电路以及制造MIT装置自发热防止电路集成装置的方法。 MIT装置自发热防止电路包括MIT装置（100），其在等于或大于临界温度的温度下产生突然的MIT，并连接到电流驱动装置（500）以控制电流驱动在MIT设备中产生MIT之后连接到MIT设备（100）以控制MIT设备的自身加热的晶体管（200）和连接到MIT设备和晶体管的电阻器（300）。

9. 发明申请

WO2009044963A1 MEMORY DEVICE USING CARBON NANOTUBE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用碳纳米管的存储器件及其制造方法
公开(公告)号：WO2009044963A1
公开(公告)日：2009-04-09
申请号：PCT/KR2008/000717
申请日：2008-02-05
申请人： INDUSTRY-UNIVERSITY COOPERATION FOUNDATION, HANYANG UNIVERSITY , KIM, Tae-Whan , KIM, Bong-Jun , LEE, Dong-Ik , JUNG, Jae-Hoon
发明人： KIM, Tae-Whan , KIM, Bong-Jun , LEE, Dong-Ik , JUNG, Jae-Hoon
IPC分类号： H01L27/115
CPC分类号： H01L51/0591 , B82Y10/00 , G11C13/025 , G11C2213/17 , G11C2213/35 , H01L29/42332 , H01L51/0048
摘要： Provided are a memory device using a carbon nanotube and a method of fabricating the same. The memory device includes a substrate, a gate dielectric layer formed on the substrate, a charge-trapping layer formed on the gate dielectric layer and formed of a carbon nanotube, a source and a drain formed in the substrate at both sides of the charge-trapping layer, and electrodes formed on the charge-trapping layer, the source, and the drain, respectively.
摘要翻译：提供了使用碳纳米管的存储器件及其制造方法。存储器件包括：衬底，形成在衬底上的栅极电介质层，形成在栅极电介质层上并由碳纳米管形成的电荷俘获层，形成于基底中的电荷 - 捕获层和形成在电荷捕获层，源极和漏极上的电极。

10. 发明申请

WO2009027826A2 THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME 审中-公开
标题翻译：三端子金属 - 绝缘体转换开关，包括其的开关系统以及控制相同金属 - 绝缘体转换的方法
公开(公告)号：WO2009027826A2
公开(公告)日：2009-03-05
申请号：PCT/IB2008/002441
申请日：2008-05-07
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , CHOI, Sung-Youl , YUN, Sun-Jin
发明人： KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , CHOI, Sung-Youl , YUN, Sun-Jin
IPC分类号： H01L49/00
CPC分类号： H01L49/003
摘要： Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
摘要翻译：提供一种能够容易地控制不连续的MIT跳跃并且不需要传统的栅极绝缘层的三端MIT开关，包括三端子MIT开关的开关系统以及控制三端MIT开关的MIT。该3端子MIT开关包括在转变电压中产生不连续MIT的2端子MIT装置，分别连接到2端子MIT装置的每个端子的入口电极和出口电极，以及控制电极，其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中根据施加到所述控制电极的电压或电流来控制所述双端MIT装置的MIT。开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

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