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    • 6. 发明申请
    • METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE
    • 使用金属绝缘体过渡器件控制晶体管辐射热的方法和电路
    • WO2009064098A3
    • 2009-07-30
    • PCT/KR2008006630
    • 2008-11-11
    • KOREA ELECTRONICS TELECOMMKIM HYUN-TAKLEE YONG-WOOKKIM BONG-JUNYUN SUN-JIN
    • KIM HYUN-TAKLEE YONG-WOOKKIM BONG-JUNYUN SUN-JIN
    • G05F3/24
    • H01L25/16H01L23/62H01L2924/0002H02H3/085H02H5/047H01L2924/00
    • Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.
    • 提供了一种用于控制功率晶体管的发热的方法和电路,其中功率晶体管可以通过使用能够用作保险丝的金属 - 绝缘体转变(MIT)装置来防止功率晶体管的发热来保护,并且可以 半永久使用。 用于控制晶体管发热的电路包括金属 - 绝缘体转变(MIT)器件,其中在预定的临界温度下出现突发的MIT; 以及连接到驱动装置并控制对驱动装置的电源的功率晶体管,其中所述MIT装置附接到所述晶体管的表面或加热部分,并且连接到所述晶体管的基极或栅极端子或周围 电路,并且其中当晶体管的温度升高到等于或大于预定临界温度的温度时,MIT器件降低或切断晶体管的电流,以防止晶体管的发热 晶体管。