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1. 发明申请

WO2009107948A2 CIRCUIT FOR PREVENTING SELF-HEATING OF METAL-INSULATOR-TRANSITION (MIT) DEVICE AND METHOD OF FABRICATING INTEGRATED-DEVICE FOR THE SAME CIRCUIT 审中-公开
标题翻译：用于防止金属绝缘体转变（MIT）装置的自加热的电路和用于制造相同电路的集成装置的方法
公开(公告)号：WO2009107948A2
公开(公告)日：2009-09-03
申请号：PCT/KR2009/000834
申请日：2009-02-23
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , Kim, Hyun-Tak , KIM, Bong-Jun , YUN, Sun-Jin , KIM, Dae-Yong
发明人： Kim, Hyun-Tak , KIM, Bong-Jun , YUN, Sun-Jin , KIM, Dae-Yong
IPC分类号： H01L27/04 , H01L49/00 , H01L29/73 , H01L29/772
CPC分类号： H01L27/067 , H01L49/003
摘要： Provided are a MIT device self-heating preventive-circuit that can solve a self-heating problem of a MIT device and a method of manufacturing a MIT device self-heating preventive-circuit integrated device. The MIT device self-heating preventive-circuit includes a MIT device that generates an abrupt MIT at a temperature equal to or greater than a critical temperature and is connected to a current driving device to control the flow of current in the current driving device, a transistor that is connected to the MIT device to control the self-heating of the MIT device after generating the MIT in the MIT device, and a resistor connected to the MIT device and the transistor.
摘要翻译：提供了能够解决MIT装置的自发热问题的MIT装置自发热防止电路以及制造MIT装置自发热防止电路集成装置的方法。 MIT装置自发热防止电路包括MIT装置，其在等于或大于临界温度的温度下产生突然的MIT，并连接到电流驱动装置以控制当前驱动装置中的电流流动，晶体管，其连接到MIT装置，以在MIT装置中产生MIT之后控制MIT装置的自发热，以及连接到MIT装置和晶体管的电阻器。

2. 发明申请

WO2009064098A2 METHOD AND CIRCUIT FOR CONTROLLING RADIANT HEAT OF TRANSISTOR USING METAL-INSULATOR TRANSITION DEVICE 审中-公开
标题翻译：利用金属 - 绝缘体过渡装置来控制晶体管的辐射热的方法和电路
公开(公告)号：WO2009064098A2
公开(公告)日：2009-05-22
申请号：PCT/KR2008/006630
申请日：2008-11-11
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , YUN, Sun-Jin
发明人： KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , YUN, Sun-Jin
IPC分类号： G05F3/24
CPC分类号： H01L25/16 , H01L23/62 , H01L2924/0002 , H02H3/085 , H02H5/047 , H01L2924/00
摘要： Provided are a method and circuit for controlling heat generation of a power transistor, in which the power transistor can be protected by preventing heat generation of the power transistor by using a metal-insulator transition (MIT) device that can function as a fuse and can be semi-permanently used. The circuit for controlling heat generation of a transistor includes a metal-insulator transition (MIT) device in which abrupt MIT occurs at a predetermined critical temperature; and a power transistor connected to a driving device and controlling power-supply to the driving device, wherein the MIT device is attached to a surface or heating portion of the transistor and is connected to a base terminal or gate terminal of the transistor or a surrounding circuit from a circuit point of view, and wherein when a temperature of the transistor increases to a temperature equal to or greater than the predetermined critical temperature, the MIT device reduces or shuts off a current of the transistor so as to prevent heat generation of the transistor.
摘要翻译：提供了一种用于控制功率晶体管的发热的方法和电路，其中可以通过使用金属 - 绝缘体转变（MIT）器件防止功率晶体管的发热来保护功率晶体管可以用作保险丝，可以半永久使用。用于控制晶体管的发热的电路包括其中在预定临界温度下发生突然MIT的金属 - 绝缘体转变（MIT）器件; 以及功率晶体管，连接到驱动装置并控制对驱动装置的供电，其中MIT装置附着到晶体管的表面或加热部分，并连接到晶体管的基极端子或栅极端子或周围并且其中当所述晶体管的温度升高到等于或大于所述预定临界温度的温度时，所述MIT装置降低或切断所述晶体管的电流，以防止所述晶体管的发热晶体管。

3. 发明申请

WO2009027826A3 THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME 审中-公开
标题翻译：三端金属绝缘子过渡开关，包括其的开关系统及其金属绝缘体过渡控制方法
公开(公告)号：WO2009027826A3
公开(公告)日：2009-04-30
申请号：PCT/IB2008002441
申请日：2008-05-07
申请人： KOREA ELECTRONICS TELECOMM , KIM HYUN-TAK , LEE YONG-WOOK , KIM BONG-JUN , CHOI SUNG-YOUL , YUN SUN-JIN
发明人： KIM HYUN-TAK , LEE YONG-WOOK , KIM BONG-JUN , CHOI SUNG-YOUL , YUN SUN-JIN
IPC分类号： H01L49/00
CPC分类号： H01L49/003
摘要： Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventipnal gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode (200) and an outlet electrode (300), which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode (400), which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
摘要翻译：提供一种3端子MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要常闭栅极绝缘层，包括3端子MIT开关的开关系统以及控制3端子MIT的MIT的方法开关。三端MIT开关包括一个2端MIT装置，它产生一个过渡电压的不连续MIT，一个入口电极（200）和一个出口电极（300），分别连接到两端MIT的每个端子装置和控制电极（400），其连接到所述入口电极并且包括与所述入口电极的外部端子分离的外部端子，其中所述2端子MIT装置的MIT根据电压或施加到控制电极的电流。开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

4. 发明申请

WO2008054055A1 LOGIC CIRCUIT USING METAL-INSULATOR TRANSITION (MIT) DEVICE 审中-公开
标题翻译：使用金属绝缘子转换（MIT）器件的逻辑电路
公开(公告)号：WO2008054055A1
公开(公告)日：2008-05-08
申请号：PCT/KR2007/003790
申请日：2007-08-07
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , LIM, JungWook , YUN, Sun-Jin , KIM, Hyun-Tak
发明人： LIM, JungWook , YUN, Sun-Jin , KIM, Hyun-Tak
IPC分类号： H03K19/20
CPC分类号： H03K19/20
摘要： Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage V T ; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.
摘要翻译：提供了一种包括金属 - 绝缘体转变（MIT）器件的逻辑电路，包括：包括MIT薄膜的MIT器件单元，与MIT薄膜接触的电极薄膜以及经历不连续MIT的至少一个MIT器件，转变电压V T T; 电源单元，包括向MIT设备施加电力的至少一个电源; 以及连接到MIT装置的至少一个电阻器，其中对通过电源的信号执行逻辑运算，以将逻辑运算的结果输出为输出信号。

5. 发明申请

WO2008004787A1 METHOD OF FORMING VANADIUM TRIOXIDE THIN FILM SHOWING ABRUPT METAL-INSULATOR TRANSITION 审中-公开
标题翻译：形成三氧化二铁薄膜显示金属绝缘体过渡的方法
公开(公告)号：WO2008004787A1
公开(公告)日：2008-01-10
申请号：PCT/KR2007/003173
申请日：2007-06-29
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , YUN, Sun-Jin , CHAE, Byung-Gyu , KIM, Hyun-Tak , LIM, JungWook , KIM, Bong-Jun
发明人： YUN, Sun-Jin , CHAE, Byung-Gyu , KIM, Hyun-Tak , LIM, JungWook , KIM, Bong-Jun
IPC分类号： C01G31/02
CPC分类号： C01G31/02 , C01P2006/40
摘要： Provided is a method of manufacturing a V 2 O 3 thin film having an abrupt MIT characteristic. The method forms a thin film of one of VO 2 and V 3 O 7 on a substrate. Then the substrate on which thin film is formed is mounted in a chamber in which a reduction atmosphere capable of removing oxygen is formed, and annealed to form a V 2 O 3 thin film having an abrupt MIT.
摘要翻译：提供了一种制造具有突变MIT特性的V 2 O 3 N 3薄膜的方法。该方法在基底上形成VO 2 N 2 O 3和N 3 O 7 N之一的薄膜。然后将其上形成有薄膜的基板安装在其中形成能够除去氧的还原气氛的室中，并且退火以形成V 2 O 3 O 3 具有突发MIT的电影。

6. 发明申请

WO2006098560A1 LOW-VOLTAGE NOISE PREVENTING CIRCUIT USING ABRUPT METAL-INSULATOR TRANSITION DEVICE 审中-公开
标题翻译：使用冲击金属绝缘子过渡装置的低电压噪声预防电路
公开(公告)号：WO2006098560A1
公开(公告)日：2006-09-21
申请号：PCT/KR2006/000778
申请日：2006-03-07
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , KANG, Kwang-Yong , CHAE, Byung-Gyu , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin , KIM, Gyung-Ock
发明人： KIM, Hyun-Tak , KANG, Kwang-Yong , CHAE, Byung-Gyu , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin , KIM, Gyung-Ock
IPC分类号： H01L27/00
CPC分类号： H01L49/003
摘要： Provided are a low-voltage noise preventing circuit using an abrupt metal-insulator transition (MIT) device which can effectively remove a noise signal with a voltage less than a rated signal voltage. The abrupt MIT device is serially connected to the electrical and/or electronic system to be protected from the noise signal, and is subject to abrupt MIT at a predetermined voltage. Accordingly, low-voltage noise can be effectively removed.
摘要翻译：提供了一种使用突变金属 - 绝缘体转变（MIT）装置的低电压噪声防止电路，其能够以低于额定信号电压的电压有效地去除噪声信号。突发MIT设备串联连接到电气和/或电子系统以防止噪声信号，并且以预定电压经受突然MIT。因此，可以有效地消除低电压噪声。

7. 发明申请

WO2009045084A3 PHOTO-GATING SWITCH SYSTEM 审中-公开
标题翻译：照相会议开关系统
公开(公告)号：WO2009045084A3
公开(公告)日：2009-05-28
申请号：PCT/KR2008005845
申请日：2008-10-06
申请人： KOREA ELECTRONICS TELECOMM , YUN SUN-JIN , LEE YONG-WOOK , KIM HYUN-TAK , KIM BONG-JUN , LIM JUNGWOOK , CHOI SUNG-YOUL
发明人： YUN SUN-JIN , LEE YONG-WOOK , KIM HYUN-TAK , KIM BONG-JUN , LIM JUNGWOOK , CHOI SUNG-YOUL
IPC分类号： H01L31/10
CPC分类号： H01L27/14603 , H01L27/1464 , H01L31/113
摘要： A photo-gating switch system comprising a photosensitive device formed on a substrate is provided. The photosensitive device may comprise a photosensitive layer and electrodes formed at both ends of the photosensitive layer. A light source irradiating light to the photosensitive device is integrated beneath the surface of the substrate.
摘要翻译：提供了一种包括形成在衬底上的光敏器件的光电门控开关系统。感光装置可以包括感光层和形成在感光层两端的电极。将光照射到光敏器件的光源被集成在衬底的表面之下。

8. 发明申请

WO2009057885A1 A THIN FILM TYPE VARISTOR AND A METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：薄膜型变压器及其制造方法
公开(公告)号：WO2009057885A1
公开(公告)日：2009-05-07
申请号：PCT/KR2008/004853
申请日：2008-08-20
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , LIM, Jung Wook , KIM, Jun Kwan , YUN, Sun Jin , KIM, Hyun Tak
发明人： LIM, Jung Wook , KIM, Jun Kwan , YUN, Sun Jin , KIM, Hyun Tak
IPC分类号： H01C7/10
CPC分类号： H01C7/112
摘要： A thin film type varistor and a method of manufacturing the same are provided. The method includes: a depositing a first zinc oxide thin film at a low temperature through a sputtering method; and a forming a zinc oxide thin film for a varistor by treating the first zinc oxide thin film with heat at a low temperature in an environment in which an inert gas and oxygen are injected. Accordingly, it is possible to lower a processing temperature and simplify a manufacturing process while maintaining a varistor characteristic so as to be applied to a highly integrated circuit.
摘要翻译：提供薄膜型压敏电阻及其制造方法。该方法包括：通过溅射法在低温下沉积第一氧化锌薄膜; 以及通过在注入惰性气体和氧气的环境中在低温下处理第一氧化锌薄膜来形成用于变阻器的氧化锌薄膜。因此，可以降低处理温度并简化制造过程，同时保持压敏电阻特性以便应用于高度集成的电路。

9. 发明申请

WO2009014348A2 THREE-TERMINAL METAL-INSULATOR TRANSITION SWITCH, SWITCHING SYSTEM INCLUDING THE SAME, AND METHOD OF CONTROLLING METAL-INSULATOR TRANSITION OF THE SAME 审中-公开
标题翻译：三端金属绝缘子过渡开关，包括其的开关系统及其金属绝缘体过渡控制方法
公开(公告)号：WO2009014348A2
公开(公告)日：2009-01-29
申请号：PCT/KR2008/004202
申请日：2008-07-18
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , CHOI, Sung-Youl , YUN, Sun-Jin
发明人： KIM, Hyun-Tak , LEE, Yong-Wook , KIM, Bong-Jun , CHOI, Sung-Youl , YUN, Sun-Jin
IPC分类号： H01L29/08
CPC分类号： H01L49/003
摘要： Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.
摘要翻译：提供了一种三端MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要常规的栅极绝缘层，包括3端子MIT开关的开关系统以及控制3端子MIT的MIT的方法开关。 3端MIT开关包括2端MIT装置，其分别连接到2端MIT装置的每个端子，产生过渡电压的不连续MIT，入口电极和出口电极以及控制电极，其连接到入口电极并且包括与入口电极的外部端子分离的外部端子，其中根据施加到控制电极的电压或电流来控制2端子MIT装置的MIT。开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

10. 发明申请

WO2008018691A1 CIRCUIT FOR CONTINUOUSLY MEASURING DISCONTINUOUS METAL INSULATOR TRANSITION OF MIT ELEMENT AND MIT SENSOR USING THE SAME 审中-公开
标题翻译：用于连续测量不连续金属绝缘子过渡的电路元件和麻省传感器的电路
公开(公告)号：WO2008018691A1
公开(公告)日：2008-02-14
申请号：PCT/KR2007/003268
申请日：2007-07-05
申请人： ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE , KIM, Hyun-Tak , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin , CHOI, Sang-Kuk
发明人： KIM, Hyun-Tak , KIM, Bong-Jun , LEE, Yong-Wook , YUN, Sun-Jin , CHOI, Sang-Kuk
IPC分类号： G01R19/165
CPC分类号： G01R31/2641
摘要： Provided are a circuit for continuously measuring a discontinuous metal-insulator transition (MIT) of an MIT element and an MIT sensor using the circuit. The circuit comprises a to-be-measured object unit including the MIT element having a discontinuous MIT occurring at the transition voltage thereof, a power supply unit applying a predetermined pulse current or voltage signal to the to-be-measured object unit, a measurement unit measuring the discontinuous MIT of the MIT element, and a microprocessor controlling the power supply unit and the measurement unit. The discontinuous MIT measurement circuit continuously measures the discontinuous MIT of the MIT element, and thus it can be used as a sensor for sensing a variation in an external factor.
摘要翻译：提供了一种用于连续测量使用该电路的MIT元件和MIT传感器的不连续金属 - 绝缘体转变（MIT）的电路。该电路包括被测量对象单元，其包括具有在其转变电压下出现的不连续MIT的MIT元件，向待测量对象单元施加预定脉冲电流或电压信号的电源单元，测量MIT元件的不连续MIT的单元，以及控制电源单元和测量单元的微处理器。不连续的MIT测量电路连续测量MIT元件的不连续MIT，因此它可以用作感测外部因素变化的传感器。

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