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1. 发明申请

WO2008091731A2 TARGET DESIGNS AND RELATED METHODS FOR REDUCED EDDY CURRENTS, INCREASED RESISTANCE AND RESISTIVITY, AND ENHANCED COOLING 审中-公开
标题翻译：目标设计和相关方法降低EDDY电流，提高电阻和电阻率以及增强冷却
公开(公告)号：WO2008091731A2
公开(公告)日：2008-07-31
申请号：PCT/US2008/050482
申请日：2008-01-08
申请人： HONEYWELL INTERNATIONAL INC. , LEE, Eal, H. , HORT, Werner , KARDOKUS, Janine, k. , STROTHERS, Susan, D. , KIM, Jaeyeon
发明人： LEE, Eal, H. , HORT, Werner , KARDOKUS, Janine, k. , STROTHERS, Susan, D. , KIM, Jaeyeon
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3426 , H01J37/3491 , Y10T29/49826
摘要： A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.
摘要翻译：本文描述的溅射靶包括：a）包含目标材料的靶表面组分; b）具有联接表面和后表面的芯背衬部件，其中所述耦合表面耦合到所述目标表面部件; 以及c）至少一个表面区域特征，其耦合到或位于所述芯背衬部件的后表面中，其中所述表面区域特征增加所述芯背衬部件的电阻，电阻率或其组合。还描述了形成溅射靶的方法，其包括：a）提供包括表面材料的靶表面组分; b）提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c）提供耦合到或位于所述芯背衬组件的后表面中的至少一个表面区域特征，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合; 以及d）将表面目标材料耦合到芯衬垫材料的耦合表面。

2. 发明申请

WO2005026408A2 METHODS OF TREATING DEPOSITION PROCESS COMPONENTS TO FORM PARTICLE TRAPS, AND DEPOSITION PROCESS COMPONENTS HAVING PARTICLE TRAPS THEREON 审中-公开
标题翻译：处理形成颗粒物的沉积工艺组分的方法和具有颗粒物的沉积过程组分
公开(公告)号：WO2005026408A2
公开(公告)日：2005-03-24
申请号：PCT/US2004/029387
申请日：2004-09-10
申请人： HONEYWELL INTERNATIONAL INC. , JAEYEON, Kim , SAYLES, Scott, R. , KARDOKUS, Janine, K. , PHELAN, Terry, J.
发明人： JAEYEON, Kim , SAYLES, Scott, R. , KARDOKUS, Janine, K. , PHELAN, Terry, J.
IPC分类号： C23C14/56
CPC分类号： C23C14/564 , B24C1/00 , B24C11/00 , C23C14/3407 , C23C16/4404
摘要： The invention includes methods for forming particle traps along surfaces of PVD components, and comprises PVD components having particle traps thereon. The invention can include utilization of highly soluble media for bead-blasting and/or can include utilization of metallic materials as bead-blasting media. The invention can also include formation of an insert along regions of a backing plate where particle traps are desired, with the insert being of a composition which has better particle-trapping properties than the backing plate.
摘要翻译：本发明包括沿着PVD组分的表面形成颗粒捕集器的方法，并且包括在其上具有颗粒捕集器的PVD组分。本发明可以包括利用用于珠粒喷射的高可溶性介质和/或可以包括使用金属材料作为珠粒喷射介质。本发明还可以包括沿着需要颗粒捕集器的背板的区域形成插入物，其中插入物具有比背板更好的颗粒捕获性质的组合物。

3. 发明申请

WO2008091731A3 TARGET DESIGNS AND RELATED METHODS FOR REDUCED EDDY CURRENTS, INCREASED RESISTANCE AND RESISTIVITY, AND ENHANCED COOLING 审中-公开
标题翻译：减少涡流的目标设计和相关方法，提高了电阻和电阻率，并增强了冷却
公开(公告)号：WO2008091731A3
公开(公告)日：2008-11-13
申请号：PCT/US2008050482
申请日：2008-01-08
申请人： HONEYWELL INT INC , LEE EAL H , HORT WERNER , KARDOKUS JANINE K , STROTHERS SUSAN D , KIM JAEYEON
发明人： LEE EAL H , HORT WERNER , KARDOKUS JANINE K , STROTHERS SUSAN D , KIM JAEYEON
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3426 , H01J37/3491 , Y10T29/49826
摘要： A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.
摘要翻译：本文描述了溅射靶，其包括：a）包含靶材料的靶表面组分; b）具有耦合表面和后表面的芯背衬部件，其中耦合表面耦合到目标表面部件; 以及c）至少一个表面区域特征，所述至少一个表面区域特征耦合到或位于所述芯背衬组件的所述背表面中，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合。还描述了形成溅射靶的方法，其包括：a）提供包含表面材料的靶表面组分; b）提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c）提供至少一个表面区域特征，所述至少一个表面区域特征耦合到或位于所述芯背衬组件的所述背表面中，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合; 和d）将表面靶材料耦合到芯背衬材料的耦合表面。

4. 发明申请

WO2005019493A2 TARGET/BACKING PLATE CONSTRUCTIONS, AND METHODS OF FORMING TARGET/BACKING PLATE CONSTRUCTIONS 审中-公开
标题翻译：目标/背板结构及其形成目标/背板结构的方法
公开(公告)号：WO2005019493A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/025801
申请日：2004-08-10
申请人： HONEYWELL INTERNATIONAL INC. , YI, Wuwen , RASTOGI, Ravi , KIM, Jaeyeon , CLARK, Brett, M. , STROTHERS, Susan, D. , PINTER, Michael, R. , KARDOKUS, Janine, K.
发明人： YI, Wuwen , RASTOGI, Ravi , KIM, Jaeyeon , CLARK, Brett, M. , STROTHERS, Susan, D. , PINTER, Michael, R. , KARDOKUS, Janine, K.
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407
摘要： The Invention includes target/backing plate constructions and methods of forming target/backing plate constructions. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of aluminum, copper, tantalum and titanium. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要翻译：本发明包括目标/背板结构以及形成靶/背板结构的方法。靶材和背板可以通过适当的中间层彼此粘结。靶可以包括铝，铜，钽和钛中的一种或多种。中间层可以包括银，铜，镍，锡，钛和铟中的一种或多种。本发明的靶/背板结构可以具有至少20ksi的键合强度和小于80微米的目标内的平均晶粒尺寸。

5. 发明申请

WO2007037796A3 CHALCOGENIDE PVD COMPONENTS AND METHODS OF FORMATION 审中-公开
标题翻译： CHALCOGENIDE PVD组分和形成方法
公开(公告)号：WO2007037796A3
公开(公告)日：2007-10-04
申请号：PCT/US2006031187
申请日：2006-08-10
申请人： HONEYWELL INT INC , RASTOGI RAVI , PINTER MICHAEL R , KARDOKUS JANINE K , PAYTON MICHAEL D
发明人： RASTOGI RAVI , PINTER MICHAEL R , KARDOKUS JANINE K , PAYTON MICHAEL D
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/3414 , C01G17/00 , C01P2006/10 , C04B35/547 , C04B35/645 , C04B2235/3287 , C04B2235/446 , C04B2235/5427 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C23C14/0623
摘要： A chalcogenide PVD component forming method includes providing a mixture of solid particles, less than about 90 volume percent (vol%) of the mixture having a crystalline microstructure, and densifying the mixture using pressure and heat. The method includes heat treating the mixture during or after the densifying at conditions sufficient to maintain or increase the percentage of the mixture having a crystalline microstructure without melting the mixture. The densified and heat treated mixture forms a rigid mass exhibiting a bulk formula including at least one element selected from the group consisting of sulfur, selenium, and tellurium. A chalcogenide PVD component includes a rigid mass containing a bonded mixture of solid particles. The mass has about 100 vol% of crystalline microstructure and the solid particles individually exhibit bulk formulas of Ge x S 100-x or Ge x Se 100-x , where x is from 33 to 50.
摘要翻译：硫族化物PVD组分形成方法包括提供具有小于约90体积％（体积％）的具有结晶微结构的混合物的固体颗粒的混合物，并且使用压力和热量使混合物致密化。该方法包括在致密化期间或之后，在足以维持或增加具有结晶微结构的混合物的百分比而不熔化混合物的条件下热处理混合物。致密和热处理的混合物形成表现出包括选自硫，硒和碲中的至少一种元素的主体配方的刚性质量。硫族化物PVD组分包括含有固体颗粒的粘合混合物的刚性质量。该质量具有约100体积％的结晶微结构，并且固体颗粒分别表现出大体上分子式为Ge x S x 100-x x或Ge x Se 100-x

6. 发明申请

WO2007081610A1 LIQUID-PARTICLE ANALYSIS OF METAL MATERIALS 审中-公开
标题翻译：金属材料的液体颗粒分析
公开(公告)号：WO2007081610A1
公开(公告)日：2007-07-19
申请号：PCT/US2006/061160
申请日：2006-11-21
申请人： HONEYWELL INTERNATIONAL INC. , STROTHERS, Susan, D. , KARDOKUS, Janine, K. , CLARK, Brett, M.
发明人： STROTHERS, Susan, D. , KARDOKUS, Janine, K. , CLARK, Brett, M.
IPC分类号： G01N21/47 , G01N33/20 , G01N15/02
CPC分类号： G01N33/20
摘要： The invention includes a method of detecting impurities in a metal-containing article. A portion of metal material is removed from a metal article and is solubilized in an acid or base-comprising liquid to produce a liquid sample. The liquid sample is subjected to an incident laser beam and light scattered from the sample is detected. The invention includes a method of analyzing a physical vapor deposition target material. A portion of target material is removed from the target and is rinsed with an acid-comprising solution. The portion of target material is dissolved to produce a liquid sample. The sample is subjected to an incident laser beam and scatter of the laser beam is detected to determine the number of particles present in the sample within a particular size range.
摘要翻译：本发明包括检测含金属物品中的杂质的方法。将一部分金属材料从金属制品中除去并溶解在含酸或碱的液体中以产生液体样品。对液体样品进行入射的激光束，并且检测从样品散射的光。本发明包括分析物理气相沉积靶材料的方法。将目标材料的一部分从靶上除去并用含酸溶液冲洗。将目标材料的部分溶解以产生液体样品。对样品进行入射激光束，并且检测激光束的散射以确定在特定尺寸范围内存在于样品中的颗粒的数量。

7. 发明申请

WO2007008468B1 CHALCOGENIDE PVD TARGETS WITH A COMPOSITION ADJUSTED BY SOLID PHASE BOND OF PARTICLES WITH CONGRUENTLY MELTING COMPOUND 审中-公开
标题翻译：具有用固体熔融化合物颗粒的固相相调节的组合物的碳化硅PVD靶材
公开(公告)号：WO2007008468B1
公开(公告)日：2007-03-15
申请号：PCT/US2006025760
申请日：2006-06-29
申请人： HONEYWELL INT INC , RASTOGI RAVI , KARDOKUS JANINE K , MORALES DIANA L
发明人： RASTOGI RAVI , KARDOKUS JANINE K , MORALES DIANA L
IPC分类号： C23C14/34
CPC分类号： C04B35/547 , C04B35/645 , C04B35/6455 , C04B2235/40 , C04B2235/408 , C04B2235/42 , C04B2235/77 , C23C14/3414
摘要： A chalcogenide PVD component includes a bonded mixture of particles of a first solid and a second solid. The first solid contains a first compound. The particle mixture may exhibit a minimum solid phase change temperature greater than a solid phase change phase temperature of an element in the first compound. The particle mixture may exhibit a maximum solid phase change temperature less than a solid phase change temperature of an element in the first compound. The first compound may be a congruently melting line compound. The bonded mixture may lack melt regions or sublimation gaps. The particle mixture may exhibit a bulk formula including three or more elements. The particle mixture may include two or more line compounds.
摘要翻译：硫族化物PVD组分包括第一种固体和第二种固体颗粒的粘合混合物。第一种固体含有第一种化合物。颗粒混合物可以表现出大于第一化合物中元素的固相变相温度的最小固相变温度。颗粒混合物可以表现出最大固相变温度小于第一化合物中元素的固相变温度。第一种化合物可以是熔点线化合物。粘合的混合物可能缺乏熔化区域或升华间隙。颗粒混合物可以表现出包含三种或更多种元素的体积配方。颗粒混合物可以包括两种或更多种线型化合物。

8. 发明申请

WO2007130903A2 HOLLOW CATHODE MAGNETRON SPUTTERING TARGETS AND METHODS OF FORMING HOLLOW CATHODE MAGNETRON SPUTTERING TARGETS 审中-公开
标题翻译：中空阴极磁控溅射靶和形成中空阴极磁控溅射靶的方法
公开(公告)号：WO2007130903A2
公开(公告)日：2007-11-15
申请号：PCT/US2007/067763
申请日：2007-04-30
申请人： HONEYWELL INTERNATIONAL INC. , KARDOKUS, Janine, K. , STROTHERS, Susan, D. , WOODWARD, Sally, A. , FERRASSE, Stephane
发明人： KARDOKUS, Janine, K. , STROTHERS, Susan, D. , WOODWARD, Sally, A. , FERRASSE, Stephane
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： The invention includes methods of forming hollow cathode magnetron sputtering targets. A metallic material is processed to produce an average grain size of less than or equal to about 30 microns and subsequently subjected to deep drawing. The invention includes three-dimensional sputtering targets comprising materials containing at least one element selected from Cu, Ti, and Ta. The target has an average grain size of from about 0.2 microns to about 30 microns throughout the target and a grain size standard deviation of less than or equal to 15% (1-σ). The invention includes three-dimensional targets comprising A1, having an average grain size of from 0.2 microns to less than 150 micron, with a grain size standard deviation of less than or equal to 15% (1- σ).
摘要翻译：本发明包括形成空心阴极磁控溅射靶的方法。处理金属材料以产生小于或等于约30微米的平均粒度，随后进行深冲。本发明包括三维溅射靶，其包含含有选自Cu，Ti和Ta中的至少一种元素的材料。目标物在整个目标物中的平均粒度为约0.2微米至约30微米，粒度标准偏差小于或等于15％（1-s）。本发明包括平均粒度为0.2微米至小于150微米的包含A1的三维靶，其粒度标准偏差小于或等于15％（1-s）。

9. 发明申请

WO2007037796A2 CHALCOGENIDE PVD COMPONENTS AND METHODS OF FORMATION 审中-公开
标题翻译： CHOCOMENIDE PVD组件和形成方法
公开(公告)号：WO2007037796A2
公开(公告)日：2007-04-05
申请号：PCT/US2006/031187
申请日：2006-08-10
申请人： HONEYWELL INTERNATIONAL INC. , RASTOGI, Ravi , PINTER, Michael, R. , KARDOKUS, Janine, K. , PAYTON, Michael, D.
发明人： RASTOGI, Ravi , PINTER, Michael, R. , KARDOKUS, Janine, K. , PAYTON, Michael, D.
IPC分类号： C23C14/06 , C23C14/34 , C01G17/00 , C04B35/547
CPC分类号： C23C14/3414 , C01G17/00 , C01P2006/10 , C04B35/547 , C04B35/645 , C04B2235/3287 , C04B2235/446 , C04B2235/5427 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C23C14/0623
摘要： A chalcogenide PVD component forming method includes providing a mixture of solid particles, less than about 90 volume percent (vol%) of the mixture having a crystalline microstructure, and densifying the mixture using pressure and heat. The method includes heat treating the mixture during or after the densifying at conditions sufficient to maintain or increase the percentage of the mixture having a crystalline microstructure without melting the mixture. The densified and heat treated mixture forms a rigid mass exhibiting a bulk formula including at least one element selected from the group consisting of sulfur, selenium, and tellurium. A chalcogenide PVD component includes a rigid mass containing a bonded mixture of solid particles. The mass has about 100 vol% of crystalline microstructure and the solid particles individually exhibit bulk formulas of Ge x S 100-x or Ge x Se 100-x , where x is from 33 to 50.
摘要翻译：硫属化物PVD组分形成方法包括提供小于约90体积％（体积％）的具有结晶微结构的混合物的固体颗粒的混合物，并使用压力和热量使混合物致密化。该方法包括在致密化期间或之后在足以保持或增加具有结晶微结构的混合物的百分比而不熔化混合物的条件下热处理混合物。致密化和热处理的混合物形成具有包含选自硫，硒和碲中的至少一种元素的本体配方的刚性物质。硫族化物PVD组件包括含有固体颗粒的粘合混合物的刚性物质。该物质具有约100体积％的结晶微观结构，并且该固体颗粒分别显示出体积分子式Ge x S 100 -x或Ge x Se _{100-x ，其中x从33到50。}

10. 发明申请

WO2005019493A3 TARGET/BACKING PLATE CONSTRUCTIONS, AND METHODS OF FORMING THEM 审中-公开
标题翻译：目标/背板结构及其形成方法
公开(公告)号：WO2005019493A3
公开(公告)日：2005-09-09
申请号：PCT/US2004025801
申请日：2004-08-10
申请人： HONEYWELL INT INC , YI WUWEN , RASTOGI RAVI , KIM JAEYEON , CLARK BRETT M , STROTHERS SUSAN D , PINTER MICHAEL R , KARDOKUS JANINE K
发明人： YI WUWEN , RASTOGI RAVI , KIM JAEYEON , CLARK BRETT M , STROTHERS SUSAN D , PINTER MICHAEL R , KARDOKUS JANINE K
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407
摘要： The Invention includes target/backing plate constructions and methods of forming target/backing plate constructions. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of aluminum, copper, tantalum and titanium. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要翻译：本发明包括目标/背板结构以及形成靶/背板结构的方法。靶材和背板可以通过适当的中间层彼此粘结。靶可以包括铝，铜，钽和钛中的一种或多种。中间层可以包括银，铜，镍，锡，钛和铟中的一种或多种。本发明的靶/背板结构可以具有至少20ksi的键合强度和小于80微米的目标内的平均晶粒尺寸。

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