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1. 发明申请

WO2008060926A2 ALLOY CASTING APPARATUSES AND CHALCOGENIDE COMPOUND SYNTHESIS METHODS 审中-公开
标题翻译：合金铸造设备和氯化铝化合物合成方法
公开(公告)号：WO2008060926A2
公开(公告)日：2008-05-22
申请号：PCT/US2007/084006
申请日：2007-11-08
申请人： HONEYWELL INTERNATIONAL INC. , KARDOKUS, Janine , PINTER, Michael R. , RASTOGI, Ravi , MORALES, Diane , PAYTON, Michael D. , SAND, Norman L. , POWERS, Bryan E.
发明人： KARDOKUS, Janine , PINTER, Michael R. , RASTOGI, Ravi , MORALES, Diane , PAYTON, Michael D. , SAND, Norman L. , POWERS, Bryan E.
CPC分类号： C01B19/007 , B22F9/04 , B22F9/08 , B22F2009/041 , B22F2999/00 , C01B19/002 , C01P2002/88 , C01P2004/03 , C22C1/0491 , C23C14/0623 , C23C14/3414 , F27B14/061 , F27D7/00 , Y02P10/253 , B22F2009/043 , B22F2009/049
摘要： A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.
摘要翻译：硫族化合物合成方法包括均匀混合固体颗粒，并且在混合过程中，向颗粒混合物赋予动能，加热颗粒混合物，使元素合金化，并形成含有该化合物的合金颗粒。另一种硫属化物化合物的合成方法包括在惰性气氛下，在加热容器中熔化颗粒混合物，从加热容器中除去熔体，将熔体置于淬火容器中并固化熔体。将固化的熔体还原成含有该化合物的合金颗粒。合金铸造设备包括外壳，加热容器，流量控制器，收集盘和主动冷却的淬火板。加热容器具有底部浇注孔和倾倒致动器。流量控制器从外壳外部操作倾倒致动器。淬火板位于收集盘的底部上方并在底部倾倒孔下方。

2. 发明申请

WO2007037796A3 CHALCOGENIDE PVD COMPONENTS AND METHODS OF FORMATION 审中-公开
标题翻译： CHALCOGENIDE PVD组分和形成方法
公开(公告)号：WO2007037796A3
公开(公告)日：2007-10-04
申请号：PCT/US2006031187
申请日：2006-08-10
申请人： HONEYWELL INT INC , RASTOGI RAVI , PINTER MICHAEL R , KARDOKUS JANINE K , PAYTON MICHAEL D
发明人： RASTOGI RAVI , PINTER MICHAEL R , KARDOKUS JANINE K , PAYTON MICHAEL D
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/3414 , C01G17/00 , C01P2006/10 , C04B35/547 , C04B35/645 , C04B2235/3287 , C04B2235/446 , C04B2235/5427 , C04B2235/72 , C04B2235/721 , C04B2235/722 , C04B2235/723 , C04B2235/77 , C04B2235/96 , C23C14/0623
摘要： A chalcogenide PVD component forming method includes providing a mixture of solid particles, less than about 90 volume percent (vol%) of the mixture having a crystalline microstructure, and densifying the mixture using pressure and heat. The method includes heat treating the mixture during or after the densifying at conditions sufficient to maintain or increase the percentage of the mixture having a crystalline microstructure without melting the mixture. The densified and heat treated mixture forms a rigid mass exhibiting a bulk formula including at least one element selected from the group consisting of sulfur, selenium, and tellurium. A chalcogenide PVD component includes a rigid mass containing a bonded mixture of solid particles. The mass has about 100 vol% of crystalline microstructure and the solid particles individually exhibit bulk formulas of Ge x S 100-x or Ge x Se 100-x , where x is from 33 to 50.
摘要翻译：硫族化物PVD组分形成方法包括提供具有小于约90体积％（体积％）的具有结晶微结构的混合物的固体颗粒的混合物，并且使用压力和热量使混合物致密化。该方法包括在致密化期间或之后，在足以维持或增加具有结晶微结构的混合物的百分比而不熔化混合物的条件下热处理混合物。致密和热处理的混合物形成表现出包括选自硫，硒和碲中的至少一种元素的主体配方的刚性质量。硫族化物PVD组分包括含有固体颗粒的粘合混合物的刚性质量。该质量具有约100体积％的结晶微结构，并且固体颗粒分别表现出大体上分子式为Ge x S x 100-x x或Ge x Se 100-x

3. 发明申请

WO2008060917A3 METHODS FOR MAKING SPUTTERING TARGETS 审中-公开
标题翻译：制造喷射目标的方法
公开(公告)号：WO2008060917A3
公开(公告)日：2009-04-02
申请号：PCT/US2007083903
申请日：2007-11-07
申请人： HONEYWELL INT INC , KARDOKUS JANINE , WERNER HORT , STROTHERS SUSAN D , HAUSMAN CHRISTIE J , HUBERT KEVIN T , MORALES DIANE , PAYTON MICHAEL D
发明人： KARDOKUS JANINE , WERNER HORT , STROTHERS SUSAN D , HAUSMAN CHRISTIE J , HUBERT KEVIN T , MORALES DIANE , PAYTON MICHAEL D
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation. In addition, methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing a core material, coupling the surface material to the core material, and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Also, methods of producing sputtering targets having reduced burn-in times include: providing a surface material combined with a core material, wherein the surface material has at least some residual surface damage and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.
摘要翻译：本文描述了具有减少的烧伤时间的溅射靶，其包括：a）具有平均晶粒尺寸的机加工的表面材料，以及b）具有平均晶粒尺寸的芯材，其中机加工表面材料具有平均表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。本文描述了具有减少的老化时间的溅射靶，其包括：表面材料和芯材料，其中至少一个表面材料或芯材料包含相对无带的结晶取向。此外，生产具有减少的老化时间的溅射靶的方法包括：提供具有至少一些残余表面损伤的表面材料，提供芯材料，将表面材料耦合到芯材料，以及将表面材料机加工成平均表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。此外，生产具有减少的烧成时间的溅射靶的方法包括：提供与芯材组合的表面材料，其中表面材料具有至少一些残余表面损伤并将表面材料机加工成平均表面粗糙度（Ra ）等于或小于表面材料或芯材料中的至少一种的平均晶粒尺寸。

4. 发明申请

WO2008063889A9 CHALCOGENIDE SPUTTERING TARGET 审中-公开
标题翻译： CHALCOGENIDE溅射靶材
公开(公告)号：WO2008063889A9
公开(公告)日：2008-08-21
申请号：PCT/US2007083921
申请日：2007-11-07
申请人： HONEYWELL INT INC , KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
发明人： KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/0623 , C23C14/3414 , H01L31/0322 , H01L45/06 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1625 , Y02E10/541 , Y02P70/521
摘要： A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimination of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 µm or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.
摘要翻译： PVD成分形成方法包括鉴定具有不同组成的两种或更多种固体，使用产生本体配方的比例均匀混合固体颗粒，在施加压力的同时固结均匀颗粒混合物以获得刚性质量并使用低于最低温度将固体熔化或升华，并形成包含物质的PVD组分。硫族化物PVD部件包括含有具有不同组成的两种或更多种固体的颗粒的结合的均匀混合物的刚性物质，所述物质具有显示最大特征尺寸为500μm或更小的微复合结构，以及一种或多种含有两种或两种以上块状配方元素的化合物。另一种PVD组分显示出均匀的组成，并且每个特征与特征之间的原子组成差异小于10％。

5. 发明申请

WO2008060926A3 ALLOY CASTING APPARATUSES AND CHALCOGENIDE COMPOUND SYNTHESIS METHODS 审中-公开
标题翻译：合金铸造设备和氯化铝化合物合成方法
公开(公告)号：WO2008060926A3
公开(公告)日：2011-04-21
申请号：PCT/US2007084006
申请日：2007-11-08
申请人： HONEYWELL INT INC , KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D , SAND NORMAN L , POWERS BRYAN E
发明人： KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D , SAND NORMAN L , POWERS BRYAN E
IPC分类号： C01B19/00 , B22F9/08 , C04B35/547 , C23C14/06 , C23C14/34
CPC分类号： C01B19/007 , B22F9/04 , B22F9/08 , B22F2009/041 , B22F2999/00 , C01B19/002 , C01P2002/88 , C01P2004/03 , C22C1/0491 , C23C14/0623 , C23C14/3414 , F27B14/061 , F27D7/00 , Y02P10/253 , B22F2009/043 , B22F2009/049
摘要： A chalcogenide compound synthesis method includes homogeneously mixing solid particles and, during the mixing, imparting kinetic energy to the particle mixture, heating the particle mixture, alloying the elements, and forming alloyed particles containing the compound. Another chalcogenide compound synthesis method includes, under an inert atmosphere, melting the particle mixture in a heating vessel, removing the melt from the heating vessel, placing the melt in a quenching vessel, and solidifying the melt. The solidified melt is reduced to alloyed particles containing the compound. An alloy casting apparatus includes an enclosure, a heating vessel, a flow controller, a collection pan and an actively cooled quench plate. The heating vessel has a bottom-pouring orifice and a pour actuator. The flow controller operates the pour actuator from outside the enclosure. The quench plate is positioned above a bottom of the collection pan and below the bottom-pouring orifice.
摘要翻译：硫族化合物合成方法包括均匀混合固体颗粒，并且在混合过程中，向颗粒混合物赋予动能，加热颗粒混合物，使元素合金化并形成含有该化合物的合金颗粒。另一种硫族化合物的合成方法包括在惰性气氛下，在加热容器中熔化颗粒混合物，从加热容器中除去熔体，将熔体置于淬火容器中，并使熔体固化。将固化的熔体还原成含有该化合物的合金颗粒。合金铸造设备包括外壳，加热容器，流量控制器，收集盘和主动冷却的淬火板。加热容器具有底部浇注孔和倾倒致动器。流量控制器从外壳外部操作倾倒致动器。淬火板位于收集盘的底部上方并在底部倾倒孔下方。

6. 发明申请

WO2008060917A9 NOVEL MANUFACTURING DESIGN AND PROCESSING METHODS AND APPARATUS FOR SPUTTERING TARGETS 审中-公开
标题翻译：新型溅射靶材的制造设计和加工方法及装置
公开(公告)号：WO2008060917A9
公开(公告)日：2008-07-31
申请号：PCT/US2007083903
申请日：2007-11-07
申请人： HONEYWELL INT INC , KARDOKUS JANINE , WERNER HORT , STROTHERS SUSAN D , HAUSMAN CHRISTIE J , HUBERT KEVIN T , MORALES DIANE , PAYTON MICHAEL D
发明人： KARDOKUS JANINE , WERNER HORT , STROTHERS SUSAN D , HAUSMAN CHRISTIE J , HUBERT KEVIN T , MORALES DIANE , PAYTON MICHAEL D
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation. In addition, methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing a core material, coupling the surface material to the core material, and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Also, methods of producing sputtering targets having reduced burn-in times include: providing a surface material combined with a core material, wherein the surface material has at least some residual surface damage and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.
摘要翻译：本文描述了具有减少的老化时间的溅射靶，其包括：a）具有平均晶粒尺寸的机器表面材料，和b）具有平均晶粒尺寸的芯材，其中机器表面材料具有平均粒度表面粗糙度（Ra）等于或小于表面材料或芯材中的至少一种的平均粒度。本文描述了具有减少的老化时间的溅射靶，其包括：表面材料和芯材料，其中表面材料或芯材料中的至少一种包含相对无带结晶学取向。此外，生产具有减少的老化时间的溅射靶的方法包括：提供具有至少一些残余表面损伤的表面材料，提供芯材，将表面材料结合到芯材，以及将表面材料机加工成平均表面粗糙度（Ra）等于或小于表面材料或芯材中的至少一种的平均粒度。另外，生产具有减少的老化时间的溅射靶的方法包括：提供与芯材相结合的表面材料，其中表面材料具有至少一些残余表面损伤并且将表面材料机加工至平均表面粗糙度（Ra ）等于或小于表面材料或芯材中的至少一种的平均粒度。

7. 发明申请

WO2008063889A2 CHALCOGENIDE PVD COMPONENTS AND METHODS OF FORMATION 审中-公开
标题翻译： CHALCOGENIDE PVD组分和形成方法
公开(公告)号：WO2008063889A2
公开(公告)日：2008-05-29
申请号：PCT/US2007083921
申请日：2007-11-07
申请人： HONEYWELL INT INC , KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
发明人： KARDOKUS JANINE , PINTER MICHAEL R , RASTOGI RAVI , MORALES DIANE , PAYTON MICHAEL D
IPC分类号： C23C14/06 , C23C14/34
CPC分类号： C23C14/0623 , C23C14/3414 , H01L31/0322 , H01L45/06 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1625 , Y02E10/541 , Y02P70/521
摘要： A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimination of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 µm or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.
摘要翻译： PVD组分形成方法包括鉴定具有不同组成的两种或更多种固体，使用产生本体配方的比例均匀混合固体颗粒，在施加压力并使用低于最低温度的温度下固化均匀的颗粒混合物以获得刚性质量固体的熔融或升华，以及形成包括该物质的PVD组分。硫族化物PVD组分包括含有两种或更多种具有不同组成的固体的粘合的均匀混合物的刚性物质，该物质具有显示最大特征尺寸为500μm或更小的微复合结构，以及一种或多种含有两种或多种主体配方元素的化合物。替代的PVD组分显示出从特征到特征的原子组成差异小于10％的均匀组成。

8. 发明申请

WO2008060917A2 NOVEL MANUFACTURING DESIGN AND PROCESSING METHODS AND APPARATUS FOR SPUTTERING TARGETS 审中-公开
标题翻译：新型制造设计与处理方法及设备用于溅射目标
公开(公告)号：WO2008060917A2
公开(公告)日：2008-05-22
申请号：PCT/US2007/083903
申请日：2007-11-07
申请人： HONEYWELL INTERNATIONAL INC. , KARDOKUS, Janine , WERNER, Hort , STROTHERS, Susan D. , HAUSMAN, Christie J. , HUBERT, Kevin T. , MORALES, Diane , PAYTON, Michael D.
发明人： KARDOKUS, Janine , WERNER, Hort , STROTHERS, Susan D. , HAUSMAN, Christie J. , HUBERT, Kevin T. , MORALES, Diane , PAYTON, Michael D.
IPC分类号： C23C14/34
CPC分类号： C23C14/3414
摘要： Sputtering targets having reduced burn-in times are described herein that include: a) a machine-finished surface material having an average grain size, and b) a core material having an average grain size, wherein the machine-finished surface material has an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Sputtering targets having reduced burn-in times are described herein that include: a surface material, and a core material, wherein at least one of the surface material or the core material comprises a relatively band-free crystallographic orientation. In addition, methods of producing sputtering targets having reduced burn-in times include: providing a surface material having at least some residual surface damage, providing a core material, coupling the surface material to the core material, and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material. Also, methods of producing sputtering targets having reduced burn-in times include: providing a surface material combined with a core material, wherein the surface material has at least some residual surface damage and machine-finishing the surface material to an average surface roughness (Ra) equal to or less than about the average grain size of at least one of the surface material or the core material.
摘要翻译：本文描述了具有减少的老化时间的溅射靶，其包括：a）具有平均晶粒尺寸的机加工的表面材料，以及b）具有平均晶粒尺寸的芯材，其中机加工表面材料具有平均表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。本文描述了具有减少的老化时间的溅射靶，其包括：表面材料和芯材料，其中至少一个表面材料或芯材料包含相对无带的结晶取向。此外，生产具有减少的老化时间的溅射靶的方法包括：提供具有至少一些残余表面损伤的表面材料，提供芯材料，将表面材料耦合到芯材料，以及将表面材料机加工成平均表面粗糙度（Ra）等于或小于表面材料或芯材中至少一种的平均晶粒尺寸。此外，生产具有减少的烧成时间的溅射靶的方法包括：提供与芯材组合的表面材料，其中表面材料具有至少一些残余表面损伤并将表面材料机加工成平均表面粗糙度（Ra ）等于或小于表面材料或芯材料中的至少一种的平均晶粒尺寸。

9. 发明申请

WO2008063889A3 CHALCOGENIDE SPUTTERING TARGET 审中-公开
公开(公告)号：WO2008063889A3
公开(公告)日：2008-05-29
申请号：PCT/US2007/083921
申请日：2007-11-07
申请人： HONEYWELL INTERNATIONAL INC. , KARDOKUS, Janine , PINTER, Michael R. , RASTOGI, Ravi , MORALES, Diane , PAYTON, Michael D.
发明人： KARDOKUS, Janine , PINTER, Michael R. , RASTOGI, Ravi , MORALES, Diane , PAYTON, Michael D.
IPC分类号： C23C14/06 , C23C14/34
摘要： A PVD component forming method includes identifying two or more solids having different compositions, homogeneously mixing particles of the solids using proportions which yield a bulk formula, consolidating the homogeneous particle mixture to obtain a rigid mass while applying pressure and using a temperature below the minimum temperature of melting or sublimination of the solids, and forming a PVD component including the mass. A chalcogenide PVD component includes a rigid mass containing a bonded homogeneous mixture of particles of two or more solids having different compositions, the mass having a microcomposite structure exhibiting a maximum feature size of 500 µm or less, and one or more of the solids containing a compound of two or more bulk formula elements. An alternative PVD component exhibits a uniform composition with less than 10% difference in atomic compositions from feature to feature.

10. 发明申请

WO2005074640A3 PHYSICAL VAPOR DEPOSITION TARGET CONSTRUCTIONS 审中-公开
标题翻译：物理蒸气沉积目标结构
公开(公告)号：WO2005074640A3
公开(公告)日：2006-03-09
申请号：PCT/US2005003437
申请日：2005-02-02
申请人： HONEYWELL INT INC , FERRASSE STEPHANE , ALFORD FRANK , KIM JAEYEON , GRABMEIER SUSANNE I , STROTHERS SUSAN D , WRAGG ANDREW N A , PRATER ROBERT M , HORT WERNER H , PAYTON MICHAEL D
发明人： FERRASSE STEPHANE , ALFORD FRANK , KIM JAEYEON , GRABMEIER SUSANNE I , STROTHERS SUSAN D , WRAGG ANDREW N A , PRATER ROBERT M , HORT WERNER H , PAYTON MICHAEL D
IPC分类号： C23C14/34 , C23C14/32
CPC分类号： C23C14/3407 , H01J37/3423 , H01J37/3426
摘要： The invention includes a target construction having a sputtering region and a flange region (22). The flange region (22) has a protective layer (50) present over at least a portion of a front surface. The invention includes a sputtering target construction having a flange region (22) where a front surface of the flange region (22) has a planar portion. A groove (26) is disposed within the front surface and a sloped portion of the front surface is disposed laterally outward from the groove (26) relative to the planar portion, the sloped portion being angled relative to the planar portion. The invention includes a target construction having an o-ring groove (26) disposed within a flange region (22). The o-ring channel has a base surface, an orifice, a first sidewall extending from the base surface to the orifice, and a second sidewall opposing the first sidewall. A first corner angle and a second corner angle within the channel are non-equivalent.
摘要翻译：本发明包括具有溅射区域和凸缘区域（22）的目标结构。凸缘区域（22）具有存在于前表面的至少一部分上的保护层（50）。本发明包括具有凸缘区域（22）的溅射靶结构，其中凸缘区域（22）的前表面具有平面部分。凹槽（26）设置在前表面内，并且前表面的倾斜部分相对于平面部分从凹槽（26）横向向外设置，倾斜部分相对于平面部分成角度。本发明包括具有设置在凸缘区域（22）内的O形环槽（26）的目标结构。 O形环通道具有基面，孔口，从基面延伸到孔口的第一侧壁和与第一侧壁相对的第二侧壁。通道内的第一个角角和第二个角角度是非等效的。

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