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    • 1. 发明申请
    • TARGET DESIGNS AND RELATED METHODS FOR REDUCED EDDY CURRENTS, INCREASED RESISTANCE AND RESISTIVITY, AND ENHANCED COOLING
    • 减少涡流的目标设计和相关方法,提高了电阻和电阻率,并增强了冷却
    • WO2008091731A3
    • 2008-11-13
    • PCT/US2008050482
    • 2008-01-08
    • HONEYWELL INT INCLEE EAL HHORT WERNERKARDOKUS JANINE KSTROTHERS SUSAN DKIM JAEYEON
    • LEE EAL HHORT WERNERKARDOKUS JANINE KSTROTHERS SUSAN DKIM JAEYEON
    • C23C14/34
    • C23C14/3407H01J37/3426H01J37/3491Y10T29/49826
    • A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.
    • 本文描述了溅射靶,其包括:a)包含靶材料的靶表面组分; b)具有耦合表面和后表面的芯背衬部件,其中耦合表面耦合到目标表面部件; 以及c)至少一个表面区域特征,所述至少一个表面区域特征耦合到或位于所述芯背衬组件的所述背表面中,其中所述表面区域特征增加所述芯背衬组件的电阻,电阻率或其组合。 还描述了形成溅射靶的方法,其包括:a)提供包含表面材料的靶表面组分; b)提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c)提供至少一个表面区域特征,所述至少一个表面区域特征耦合到或位于所述芯背衬组件的所述背表面中,其中所述表面区域特征增加所述芯背衬组件的电阻,电阻率或其组合; 和d)将表面靶材料耦合到芯背衬材料的耦合表面。
    • 2. 发明申请
    • NOVEL MANUFACTURING DESIGN AND PROCESSING METHODS AND APPARATUS FOR SPUTTERING TARGETS
    • 新型制造设计与处理方法及设备用于溅射目标
    • WO2008134516A3
    • 2009-03-19
    • PCT/US2008061583
    • 2008-04-25
    • HONEYWELL INT INCKARDOKUS JANINEPINTER MICHAELPAYTON MICHAELWU STEVEN CHI TSEAKINS JAREDHORT WERNER
    • KARDOKUS JANINEPINTER MICHAELPAYTON MICHAELWU STEVEN CHI TSEAKINS JAREDHORT WERNER
    • C23C14/34
    • C23C14/3414C22F1/18
    • Sputtering targets having a reduced burn-in time are disclosed that comprise: a) a heat-modified surface material having a substantially uniform crystallographic orientation, wherein at least part of the surface material was melted during heat-treatment, and b) a core material having an average grain size. Sputtering targets are also disclosed that include a heat-modified surface material having network of shallow trenches, alternating rounded peaks and valleys in the surface of the target or a combination thereof, wherein at least part of the surface material was melted during heat-treatment, and a core material having an average grain size. Methods of producing sputtering targets having reduced burn-in times comprises: a) providing a sputtering target comprising a sputtering surface having a sputter material and a crystal lattice, and b) heat-modifying the sputtering surface in order to melt at least part of the surface material and modify the crystal lattice. Methods of producing a sputtering target having a reduced burn-in time are also disclosed comprising: providing a sputtering target having a sputtering surface, wherein the sputtering surface comprises a damage layer, and modifying the sputtering surface by deplating a layer of material, pulsed-plating a layer of material or a combination thereof.
    • 公开了具有减少的老化时间的溅射靶,其包括:a)具有基本上均匀的晶体取向的热改性表面材料,其中至少部分表面材料在热处理期间熔化,以及b)芯材料 具有平均粒度。 还公开了溅射靶,其包括在靶的表面中具有浅沟槽,交替的圆形峰和谷的热改性表面材料或其组合,其中至少部分表面材料在热处理期间熔化, 和具有平均粒径的芯材。 制造具有减少的烧结时间的溅射靶的方法包括:a)提供溅射靶,其包括具有溅射材料和晶格的溅射表面,以及b)对所述溅射表面进行加热改性以熔化至少部分 表面材料并修饰晶格。 还公开了具有降低的烧成时间的溅射靶的制造方法,包括:提供具有溅射表面的溅射靶,其中所述溅射表面包括损伤层,并且通过将材料层去掉而改变溅射表面, 电镀一层材料或其组合。
    • 3. 发明申请
    • TARGET DESIGNS AND RELATED METHODS FOR ENHANCED COOLING AND REDUCED DEFLECTION AND DEFORMATION
    • 目标设计和相关方法,用于增强冷却和减少的偏差和变形
    • WO2004038059A2
    • 2004-05-06
    • PCT/US0333879
    • 2003-10-24
    • HONEYWELL INT INCSTROTHERS SUSANHORT WERNERMCNEIL FREDERICK
    • STROTHERS SUSANHORT WERNERMCNEIL FREDERICK
    • B22F3/15B23K20/14B23K20/16B29C67/00C23C20060101C23C14/34C23C14/35C23C
    • H01J37/3435C23C14/3407H01J37/3423H01J37/3426
    • A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the effective surface area of the core backing component. Additional sputtering targets comprises: a) an integrated target surface component and core backing component, wherein the surface component and the backing component comprise the same target material or a material gradient; and b) at least one surface area feature that is on or integrated into the core backing component, wherein the surface area feature increases the effective component of the core backing component. Methods of forming a sputtering target are also described that comprise: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing plate, wherein the surface area feature increases the effective surface area of the core backing plate or providing at least one surface area feature coupled to or located in the coupling surface of the core backing component, wherein the surface area feature increases the effective surface area of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.
    • 本文描述的溅射靶包括:a)包含目标材料的靶表面组分; b)具有联接表面和后表面的芯背衬部件,其中所述耦合表面耦合到所述目标表面部件; 以及c)至少一个表面区域特征,其耦合到或位于所述芯背衬部件的后表面中,其中所述表面区域特征增加所述芯背衬部件的有效表面积。 附加的溅射靶包括:a)集成的靶表面组分和芯背衬组分,其中表面组分和背衬组分包含相同的靶材料或材料梯度; 和b)位于或集成到所述芯背衬组件中的至少一个表面区域特征,其中所述表面区域特征增加所述芯衬垫组件的有效成分。 还描述了形成溅射靶的方法,其包括:a)提供包含表面材料的靶表面组分; b)提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c)提供耦合到或位于所述芯背板的后表面中的至少一个表面区域特征,其中所述表面区域特征增加所述芯背板的有效表面积,或提供耦合到或定位的至少一个表面区域特征 在所述芯背衬部件的耦合表面中,其中所述表面区域特征增加所述芯背衬部件的有效表面积; 以及d)将表面目标材料耦合到芯衬垫材料的耦合表面。