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1. 发明申请

WO2005021828A2 PVD TARGETS COMPRISING COPPER IN TERNARY MIXTURES, AND METHODS OF FORMING COPPER-CONTAINING PVD TARGETS 审中-公开
标题翻译：在三元混合物中包含铜的PVD目标和形成含铜PVD靶材的方法
公开(公告)号：WO2005021828A2
公开(公告)日：2005-03-10
申请号：PCT/US2004027090
申请日：2004-08-20
申请人： HONEYWELL INT INC , DANIELS BRIAN J , HAUSMAN CHRISTIE J , HUTCHISON CARA L , LEE EAL H , YI WUWEN , STROTHERS SUSAN D , PINTER MICHAEL R , THOMAS MICHAEL E
发明人： DANIELS BRIAN J , HAUSMAN CHRISTIE J , HUTCHISON CARA L , LEE EAL H , YI WUWEN , STROTHERS SUSAN D , PINTER MICHAEL R , THOMAS MICHAEL E
IPC分类号： C23C14/16 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , C23C14/14 , C23C14/32
CPC分类号： C23C14/3414 , B32B15/012 , C23C14/16 , C23C14/185 , C23C14/3407 , H01L21/2855 , H01L21/76841 , H01L21/76843 , H01L21/76871 , H01L21/76877 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a physical vapor deposition target containing copper and at least two additional elements selected from Ag, Al, As, Au, B, Be, Ca, Cd, Co, Cr, Fe, Ga, Ge, Hf, Hg, In, Ir, Li, Mg, Mn, Nb, Ni, Pb, Pd, Pt, Sb, Sc, Si, Sn, Ta, Te, Ti, V, W, Zn and Zr, a total amount of the at least two additional elements being from 100 ppm to 10 atomic %. The invention additionally includes thin films and interconnects which contain the mixture of copper and at least two added elements. The invention also includes forming a copper-containing target. A mixture of copper and two or more elements is formed. The mixture is cast by melting and is subsequently cooled to form a billet which is worked utilizing one or both of equal channel angular extrusion and thermornechanical processing to form a target.
摘要翻译：本发明包括含有铜和至少两种选自Ag，Al，As，Au，B，Be，Ca，Cd，Co，Cr，Fe，Ga，Ge，Hf，Hg，In， Ir，Li，Mg，Mn，Nb，Ni，Pb，Pd，Pt，Sb，Sc，Si，Sn，Ta，Te，Ti，V，W，Zn和Zr中的至少两种添加元素为100〜10原子％。本发明还包括含有铜和至少两种添加元素的混合物的薄膜和互连。本发明还包括形成含铜靶。形成铜和两种或更多种元素的混合物。混合物通过熔化铸造并随后冷却以形成坯料，其使用等通道角挤压和热机械加工中的一种或两种来形成靶。

2. 发明申请

WO2007130888A1 COPPER TARGET 审中-公开
标题翻译：铜目标
公开(公告)号：WO2007130888A1
公开(公告)日：2007-11-15
申请号：PCT/US2007/067734
申请日：2007-04-30
申请人： HONEYWELL INTERNATIONAL INC. , YI, Wuwen , STROTHERS, Susan D.
发明人： YI, Wuwen , STROTHERS, Susan D.
IPC分类号： C23C14/34
CPC分类号： C23C14/3414 , C22C9/00
摘要： The invention includes physical vapor deposition targets formed of copper material and having an average grain size of less than 50 microns and an absence of course-grain areas throughout the target. The invention encompasses a physical vapor deposition target of a copper material and having an average grain size of less than 50 microns with a grain size standard deviation of less than 5% (1-σ) throughout the target. The copper material is selected from copper alloys and high-purity copper material containing greater than or equal to 99.9999% copper, by weight. The invention includes methods of forming copper physical vapor deposition targets. An as-cast copper material is subjected to a multistage processing. Each stage of the multistage processing includes a heating event, a hot-forging event, and a water quenching event. After the multistage processing the copper material is rolled to produce a target blank.
摘要翻译：本发明包括由铜材料形成并且具有小于50微米的平均晶粒尺寸并且整个靶材上不存在过程晶粒区域的物理气相沉积靶。本发明包括铜材料的物理气相沉积靶，其平均粒度小于50微米，其晶粒尺寸标准偏差小于5％（1-s）。铜材料选自铜合金和含有大于或等于99.9999重量％铜的高纯度铜材料。本发明包括形成铜物理气相沉积靶的方法。铸造铜材料经受多级处理。多级处理的每个阶段包括加热事件，热锻事件和水淬事件。在多级处理之后，轧制铜材料以产生目标坯料。

3. 发明申请

WO2005019493A2 TARGET/BACKING PLATE CONSTRUCTIONS, AND METHODS OF FORMING TARGET/BACKING PLATE CONSTRUCTIONS 审中-公开
标题翻译：目标/背板结构及其形成目标/背板结构的方法
公开(公告)号：WO2005019493A2
公开(公告)日：2005-03-03
申请号：PCT/US2004/025801
申请日：2004-08-10
申请人： HONEYWELL INTERNATIONAL INC. , YI, Wuwen , RASTOGI, Ravi , KIM, Jaeyeon , CLARK, Brett, M. , STROTHERS, Susan, D. , PINTER, Michael, R. , KARDOKUS, Janine, K.
发明人： YI, Wuwen , RASTOGI, Ravi , KIM, Jaeyeon , CLARK, Brett, M. , STROTHERS, Susan, D. , PINTER, Michael, R. , KARDOKUS, Janine, K.
IPC分类号： C23C14/34
CPC分类号： H01J37/3435 , C23C14/3407
摘要： The Invention includes target/backing plate constructions and methods of forming target/backing plate constructions. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of aluminum, copper, tantalum and titanium. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要翻译：本发明包括目标/背板结构以及形成靶/背板结构的方法。靶材和背板可以通过适当的中间层彼此粘结。靶可以包括铝，铜，钽和钛中的一种或多种。中间层可以包括银，铜，镍，锡，钛和铟中的一种或多种。本发明的靶/背板结构可以具有至少20ksi的键合强度和小于80微米的目标内的平均晶粒尺寸。

4. 发明申请

WO2005019493A3 TARGET/BACKING PLATE CONSTRUCTIONS, AND METHODS OF FORMING THEM 审中-公开
标题翻译：目标/背板结构及其形成方法
公开(公告)号：WO2005019493A3
公开(公告)日：2005-09-09
申请号：PCT/US2004025801
申请日：2004-08-10
申请人： HONEYWELL INT INC , YI WUWEN , RASTOGI RAVI , KIM JAEYEON , CLARK BRETT M , STROTHERS SUSAN D , PINTER MICHAEL R , KARDOKUS JANINE K
发明人： YI WUWEN , RASTOGI RAVI , KIM JAEYEON , CLARK BRETT M , STROTHERS SUSAN D , PINTER MICHAEL R , KARDOKUS JANINE K
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： H01J37/3435 , C23C14/3407
摘要： The Invention includes target/backing plate constructions and methods of forming target/backing plate constructions. The targets and backing plates can be bonded to one another through an appropriate interlayer. The targets can comprise one or more of aluminum, copper, tantalum and titanium. The interlayer can comprise one or more of silver, copper, nickel, tin, titanium and indium. Target/backing plate constructions of the present invention can have bond strengths of at least 20 ksi and an average grain size within the target of less than 80 microns.
摘要翻译：本发明包括目标/背板结构以及形成靶/背板结构的方法。靶材和背板可以通过适当的中间层彼此粘结。靶可以包括铝，铜，钽和钛中的一种或多种。中间层可以包括银，铜，镍，锡，钛和铟中的一种或多种。本发明的靶/背板结构可以具有至少20ksi的键合强度和小于80微米的目标内的平均晶粒尺寸。

5. 发明申请

WO03008656B1 SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES 审中-公开
标题翻译：溅射靶，溅射反应器，形成铸件的方法和形成金属制品的方法
公开(公告)号：WO03008656B1
公开(公告)日：2004-04-08
申请号：PCT/US0145650
申请日：2001-10-09
申请人： HONEYWELL INT INC , WU CHI TSE , YI WUWEN , HIDDEN FREDERICK B
发明人： WU CHI TSE , YI WUWEN , HIDDEN FREDERICK B
IPC分类号： B22D21/00 , B21J5/00 , B21J5/02 , B21J13/02 , B21K21/00 , B21K23/00 , B22D7/00 , B22D27/08 , C22F1/00 , C22F1/08 , C23C14/34 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3423 , B21J5/00 , B21J5/02 , B21K21/00 , B22D7/00 , B22D27/08 , C22F1/00 , C22F1/08 , C23C14/3407 , C23C14/3414 , H01J37/3408
摘要： The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
摘要翻译：本发明包括形成金属制品的方法。提供金属材料锭，这种锭具有初始厚度。铸锭经受热锻。将热锻的产物淬火以在金属材料内固定小于250微米的平均粒度。淬火材料可以形成三维物理气相沉积靶。本发明还包括一种形成铸锭的方法。在特定方面，铸锭是高纯度铜材料。本发明还包括物理气相沉积靶和磁控管等离子体溅射反应器组件。

6. 发明申请

WO2003008656A3 SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES 审中-公开
公开(公告)号：WO2003008656A3
公开(公告)日：2003-01-30
申请号：PCT/US2001/045650
申请日：2001-10-09
申请人： HONEYWELL INTERNATIONAL INC. , WU, Chi, Tse , YI, Wuwen , HIDDEN, Frederick, B.
发明人： WU, Chi, Tse , YI, Wuwen , HIDDEN, Frederick, B.
IPC分类号： C23C14/34
摘要： The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.

7. 发明申请

WO2003008656A2 SPUTTERING TARGETS, SPUTTER REACTORS, METHODS OF FORMING CAST INGOTS, AND METHODS OF FORMING METALLIC ARTICLES 审中-公开
标题翻译：溅射靶，溅射反应器，铸造锭的形成方法以及形成金属制品的方法
公开(公告)号：WO2003008656A2
公开(公告)日：2003-01-30
申请号：PCT/US2001/045650
申请日：2001-10-09
申请人： HONEYWELL INTERNATIONAL INC. , WU, Chi, Tse , YI, Wuwen , HIDDEN, Frederick, B.
发明人： WU, Chi, Tse , YI, Wuwen , HIDDEN, Frederick, B.
IPC分类号： C22F1/00
CPC分类号： H01J37/3423 , B21J5/00 , B21J5/02 , B21K21/00 , B22D7/00 , B22D27/08 , C22F1/00 , C22F1/08 , C23C14/3407 , C23C14/3414 , H01J37/3408
摘要： The invention encompasses a method of forming a metallic article. An ingot of metallic material is provided, and such ingot has an initial thickness. The ingot is subjected to hot forging. The product of the hot forging is quenched to fix an average grain size of less than 250 microns within the metallic material. The quenched material can be formed into a three dimensional physical vapor deposition target. The invention also includes a method of forming a cast ingot. In particular aspects, the cast ingot is a high-purity copper material. The invention also includes physical vapor deposition targets, and magnetron plasma sputter reactor assemblies.
摘要翻译：本发明包括一种形成金属制品的方法。提供金属材料锭，并且这种锭具有初始厚度。锭经受热锻造。淬火的热锻产品在金属材料中固定小于250微米的平均晶粒尺寸。淬火的材料可以形成为三维物理气相沉积靶。本发明还包括一种形成铸锭的方法。在特定方面，铸锭是高纯度铜材料。本发明还包括物理气相沉积靶和磁控管等离子体溅射反应器组件。

8. 发明申请

WO2005077677A1 PHYSICAL VAPOR DEPOSITION COMPONENTS, AND METHODS OF TREATING COMPONENTS 审中-公开
标题翻译：物理蒸气沉积组分和处理组分的方法
公开(公告)号：WO2005077677A1
公开(公告)日：2005-08-25
申请号：PCT/US2005/003523
申请日：2005-02-02
申请人： HONEYWELL INTERNATIONAL, INC. , WU, Chi Tse , WRAGG, Andrew, Neil, Anthony , PINTER, Michael, R. , YI, Wuwen , KARDOKUS, Janine, K. , RASTOGI, Ravi
发明人： WU, Chi Tse , WRAGG, Andrew, Neil, Anthony , PINTER, Michael, R. , YI, Wuwen , KARDOKUS, Janine, K. , RASTOGI, Ravi
IPC分类号： B44C1/22
CPC分类号： C23C14/564 , C23C14/3407 , C25D5/16 , C25D7/00
摘要： The invention includes methods for removing embedded beab-blast media from physical vapor deposition components (14). The components comprise a material within which the bead-blast media is embedded. The components are subjected to an etch which removes some of the material, and thus loosens the embedded bead-blast media. The components (14) are subsequently exposed to a treatment which sweeps the loosened bead-blast media from the components (14). The invention also encompasses utilization of electroplated materials (170) as particle traps on PVD components (14). The electroplated materials (170) are plated under sufficiently high current density to form the electroplated materials (170) to have roughened outer surfaces.
摘要翻译：本发明包括从物理气相沉积组件（14）去除嵌入式爆破介质的方法。这些组件包括其中嵌入珠粒介质的材料。对这些部件进行蚀刻，去除一些材料，从而松开嵌入的珠粒介质。随后将组分（14）暴露于从组分（14）扫掠松散的珠粒介质的处理。本发明还包括将电镀材料（170）用作PVD组分（14）上的颗粒捕集器。电镀材料（170）在足够高的电流密度下进行电镀以形成电镀材料（170）以具有粗糙的外表面。

9. 发明申请

WO2005021828A3 COPPER-CONTAINING PVD TARGETS AND METHODS FOR THEIR MANUFACTURE 审中-公开
公开(公告)号：WO2005021828A3
公开(公告)日：2005-03-10
申请号：PCT/US2004/027090
申请日：2004-08-20
申请人： HONEYWELL INTERNATIONAL INC. , DANIELS, Brian, J. , HAUSMAN, Christie, J. , HUTCHISON, Cara, L. , LEE, Eal, H. , YI, Wuwen , STROTHERS, Susan, D. , PINTER, Michael, R. , THOMAS, Michael, E.
发明人： DANIELS, Brian, J. , HAUSMAN, Christie, J. , HUTCHISON, Cara, L. , LEE, Eal, H. , YI, Wuwen , STROTHERS, Susan, D. , PINTER, Michael, R. , THOMAS, Michael, E.
IPC分类号： C23C14/14
摘要： The invention includes a physical vapor deposition target containing copper and at least two additional elements selected from Ag, Al, As, Au, B, Be, Ca, Cd, Co, Cr, Fe, Ga, Ge, Hf, Hg, In, Ir, Li, Mg, Mn, Nb, Ni, Pb, Pd, Pt, Sb, Sc, Si, Sn, Ta, Te, Ti, V, W, Zn and Zr, a total amount of the at least two additional elements being from 100 ppm to 10 atomic %. The invention additionally includes thin films and interconnects which contain the mixture of copper and at least two added elements. The invention also includes forming a copper-containing target. A mixture of copper and two or more elements is formed. The mixture is cast by melting and is subsequently cooled to form a billet which is worked utilizing one or both of equal channel angular extrusion and thermornechanical processing to form a target.

10. 发明申请

WO2004094688A1 PVD TARGET/BACKING PLATE CONSTRUCTIONS; AND METHODS OF FORMING PVD TARGET/BACKING PLATE CONSTRUCTIONS 审中-公开
标题翻译： PVD目标/背板结构; 和PVD目标/背板结构的形成方法
公开(公告)号：WO2004094688A1
公开(公告)日：2004-11-04
申请号：PCT/US2004/008343
申请日：2004-03-17
申请人： HONEYWELL INTERNATIONAL INC. , CLARK, Brett, M. , YI, Wuwen , SMITS, Roberta, L. , BROWN, Alan
发明人： CLARK, Brett, M. , YI, Wuwen , SMITS, Roberta, L. , BROWN, Alan
IPC分类号： C23C14/34
CPC分类号： G01N29/07 , C23C14/3407 , G01B17/025 , G01N2291/02854 , G01N2291/044 , G01N2291/2632
摘要： The invention encompasses a construction in which a PVD target (18) is bonded to a backing plate (16). The target (18) has a bonding surface (19) utilized in forming the bond to the backing plate (16), and the backing plate (16) has a bonding surface (19) utilized in forming the bond to the target (18). One or more holes (100) extend into the target (18) through the target bonding surface (19) and/or one or more holes extend into the backing through the backing plate, bonding surface (19). The invention also includes methods of forming PVD target/backing plate constructions (104), and methods of utilizing holes extending into one or both of the target (18) and the backing plate (19) of the target/backing plate construction (104) during ultrasound determination of a thickness of the target (18).
摘要翻译：本发明包括其中PVD靶（18）结合到背板（16）的结构。目标（18）具有用于形成与背板（16）的接合的接合表面（19），并且背板（16）具有用于形成与目标（18）的接合的接合表面（19）。一个或多个孔（100）通过目标结合表面（19）延伸到目标（18）中，和/或一个或多个孔通过背板，粘合表面（19）延伸到背衬中。本发明还包括形成PVD靶/背板结构（104）的方法，以及利用延伸到目标/背板结构（104）的靶（18）和背板（19）中的一个或两个中的孔的方法，在超声测定靶（18）的厚度期间。

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