专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2008103161A1 EX-SITU DOPED SEMICONDUCTOR TRANSPORT LAYER 审中-公开
公开(公告)号：WO2008103161A1
公开(公告)日：2008-08-28
申请号：PCT/US2007/025211
申请日：2007-12-10
申请人： EASTMAN KODAK COMPANY , KAHEN, Keith Brian
发明人： KAHEN, Keith Brian
IPC分类号： H01L21/368 , H01L21/208
CPC分类号： H01L21/02628 , H01L21/02521 , H01L21/02601 , Y10S977/892
摘要： A method of making an ex-situ doped semiconductor transport layer for use in an electronic device includes: growing a first set of semiconductor nanoparticles having surface organic ligands in a colloidal solution; growing a second set of dopant material nanoparticles having surface organic ligands in a colloidal solution; depositing a mixture of the first set of semiconductor nanoparticles and the second set of dopant material nanoparticles on a surface, wherein there are more semiconductor nanoparticles than dopant material nanoparticles; performing a first anneal of the deposited mixture of nanoparticles so that the organic ligands boil off the surfaces of the first and second set of nanoparticles; performing a second anneal of the deposited mixture so that the semiconductor nanoparticles fuse to form a continuous semiconductor layer and the dopant material atoms diffuse out from the dopant material nanoparticles and into the continuous semiconductor layer.
摘要翻译：制造用于电子器件的非原位掺杂半导体传输层的方法包括：在胶体溶液中生长具有表面有机配体的第一组半导体纳米颗粒; 在胶体溶液中生长具有表面有机配体的第二组掺杂剂材料纳米颗粒; 将第一组半导体纳米颗粒和第二组掺杂剂材料纳米颗粒的混合物沉积在表面上，其中存在比掺杂剂材料纳米颗粒更多的半导体纳米颗粒; 对所沉积的纳米颗粒混合物进行第一次退火，使得有机配体从第一组和第二组纳米颗粒的表面沸腾出来; 对沉积的混合物进行第二退火，使得半导体纳米颗粒融合形成连续的半导体层，并且掺杂剂材料原子从掺杂剂材料纳米颗粒扩散到连续的半导体层中。

2. 发明申请

WO2011041274A1 FORMING CATALYZED II-VI SEMICONDUCTOR NANOWIRES 审中-公开
标题翻译：形成催化剂II-VI半导体纳米颗粒
公开(公告)号：WO2011041274A1
公开(公告)日：2011-04-07
申请号：PCT/US2010/050455
申请日：2010-11-24
申请人： EASTMAN KODAK COMPANY , KAHEN, Keith, Brian
发明人： KAHEN, Keith, Brian
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L21/02603 , H01L21/0237 , H01L21/02551 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02645 , H01L21/02653
摘要： A method of forming II - VI semiconductor nanowires, comprises: providing a support; depositing a layer including metal alloy nanoparticles on the support; and, heating the support and growing II - VI semiconductor nanowires where the metal alloy nanoparticles act as catalysts and selectively cause localized growth of the nanowires.
摘要翻译：一种形成II-VI族半导体纳米线的方法，包括：提供载体; 在载体上沉积包含金属合金纳米颗粒的层; 并加热载体和生长II-VI半导体纳米线，其中金属合金纳米颗粒用作催化剂并选择性地引起纳米线的局部生长。

3. 发明申请

WO2011041215A1 II-VI SEMICONDUCTOR NANOWIRES 审中-公开
公开(公告)号：WO2011041215A1
公开(公告)日：2011-04-07
申请号：PCT/US2010/050108
申请日：2010-09-24
申请人： EASTMAN KODAK COMPANY , KAHEN, Keith, Brian
发明人： KAHEN, Keith, Brian
IPC分类号： H01L33/06 , H01S5/34
CPC分类号： H01L33/06 , B82Y20/00 , H01S5/341
摘要： A high quality II- VI semiconductor nanowire is disclosed. A plurality of II- VI semiconductor nanowires is provided, with each being fixed to a support. Each nanowire terminates in a free end and a metal alloy nanoparticle is fixed to each nanowire at its free end.
摘要翻译：公开了一种高品质的II-VI半导体纳米线。提供多个II-VI半导体纳米线，每个固定在支撑体上。每个纳米线终止于自由端，并且金属合金纳米颗粒在其自由端固定到每个纳米线。

4. 发明申请

WO2009014588A3 LIGHT-EMITTING NANOCOMPOSITE PARTICLES 审中-公开
标题翻译：发光纳米复合粒子
公开(公告)号：WO2009014588A3
公开(公告)日：2009-04-09
申请号：PCT/US2008007729
申请日：2008-06-20
申请人： EASTMAN KODAK CO , KAHEN KEITH BRIAN
发明人： KAHEN KEITH BRIAN
IPC分类号： H05B33/14
CPC分类号： H05B33/145
摘要： A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; forming a single colloidal dispersion of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; depositing the colloidal dispersion to form a film; and annealing the film to form the inorganic light emitting layer.
摘要翻译：制造无机发光层的方法包括组合用于半导体纳米颗粒生长的溶剂，核/壳量子点和半导体纳米颗粒前体的溶液; 生长半导体纳米颗粒以形成连接到核/壳量子点的核/壳量子点，半导体纳米颗粒和半导体纳米颗粒的粗溶液; 形成与芯/壳量子点连接的核/壳量子点，半导体纳米颗粒和半导体纳米颗粒的单一胶体分散体; 沉积胶体分散体以形成膜; 并对膜进行退火以形成无机发光层。

5. 发明申请

WO2009014588A2 LIGHT-EMITTING NANOCOMPOSITE PARTICLES 审中-公开
标题翻译：发光纳米复合粒子
公开(公告)号：WO2009014588A2
公开(公告)日：2009-01-29
申请号：PCT/US2008/007729
申请日：2008-06-20
申请人： EASTMAN KODAK COMPANY , KAHEN, Keith Brian
发明人： KAHEN, Keith Brian
IPC分类号： H05B33/14
CPC分类号： H05B33/145
摘要： A method of making an inorganic light emitting layer includes combining a solvent for semiconductor nanoparticle growth, a solution of core/shell quantum dots, and semiconductor nanoparticle precursor(s); growing semiconductor nanoparticles to form a crude solution of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; forming a single colloidal dispersion of core/shell quantum dots, semiconductor nanoparticles, and semiconductor nanoparticles that are connected to the core/shell quantum dots; depositing the colloidal dispersion to form a film; and annealing the film to form the inorganic light emitting layer.
摘要翻译：制造无机发光层的方法包括组合用于半导体纳米粒子生长的溶剂，核/壳量子点的溶液和半导体纳米粒子前体; 生长半导体纳米粒子以形成连接到核/壳量子点的核/壳量子点，半导体纳米粒子和半导体纳米粒子的粗溶液; 形成连接到核/壳量子点的核/壳量子点，半导体纳米粒子和半导体纳米粒子的单一胶态分散体; 沉积胶态分散体以形成膜; 并对膜进行退火以形成无机发光层。

6. 发明申请

WO2007024473A1 FORMING DISPLAY COLOR IMAGE 审中-公开
标题翻译：形成显示彩色图像
公开(公告)号：WO2007024473A1
公开(公告)日：2007-03-01
申请号：PCT/US2006/030832
申请日：2006-08-08
申请人： EASTMAN KODAK COMPANY , MONTBACH, Erica Nicole , KAHEN, Keith Brian
发明人： MONTBACH, Erica Nicole , KAHEN, Keith Brian
IPC分类号： G02F1/13357
CPC分类号： G02B26/005 , G02B27/48 , G02F1/133603 , G02F2203/12 , G02F2203/34
摘要： An apparatus for forming a colored image on a display, includes a VCSEL array device (100) having a plurality of light-emitting pixels wherein each light-emitting pixel produces a beam of light including substantial components in a portion of the visible spectrum so that different light-emitting pixels produce different colored light; and a light shutter layer (310) for each light emitting pixel providing a modulator disposed in the path of the corresponding light beam for selectively passing corresponding colored light for providing a colored light image on the display.
摘要翻译：一种用于在显示器上形成彩色图像的装置，包括具有多个发光像素的VCSEL阵列器件（100），其中每个发光像素产生包括可见光谱的一部分中的实质部件的光束，使得不同的发光像素产生不同的彩色光; 以及用于每个发光像素的光快门层（310），其提供设置在相应光束的路径中的调制器，用于选择性地通过相应的彩色光以在显示器上提供彩色光图像。

7. 发明申请

WO2005098987A3 OLED WITH COLOR CHANGE MEDIA 审中-公开
标题翻译： OLED与彩色变化媒体
公开(公告)号：WO2005098987A3
公开(公告)日：2006-05-26
申请号：PCT/US2005010702
申请日：2005-03-29
申请人： EASTMAN KODAK CO , BOROSON MICHAEL LOUIS , WINTERS DUSTIN LEE , TYAN YUAN-SHENG , KAHEN KEITH BRIAN
发明人： BOROSON MICHAEL LOUIS , WINTERS DUSTIN LEE , TYAN YUAN-SHENG , KAHEN KEITH BRIAN
IPC分类号： H01L27/32 , H01L51/52
CPC分类号： H01L27/322 , H01L27/3211 , H01L27/3244 , H01L51/5265
摘要： A tuned OLED device includes a microcavity structure including a light-emitting layer for producing light, a semitransparent reflector, and a reflector layer disposed on opposite sides of the light-emitting layer, the microcavity structure enhancing on-axis light produced from the light-emitting layer in at least one particular wavelength to produce a desired on-axis viewed color while not substantially enhancing on-axis other wavelengths of such light, and a layer including a color change medium which is responsive to wavelengths of light shorter than the particular wavelength by absorbing such shorter wavelengths of light and emitting light corresponding in color to the particular wavelength, thereby improving the color of the light produced by the OLED device when viewed in an off-axis direction.
摘要翻译：调谐OLED器件包括微腔结构，其包括用于产生光的发光层，半透明反射器和设置在发光层的相对侧上的反射器层，所述微腔结构增强从发光层产生的轴上光，发光层以至少一个特定波长产生期望的轴上观察颜色，同时基本上不增强这种光的轴上其他波长，以及包括响应于比特定波长的光的波长的变色介质的层通过吸收这种较短波长的光并发出与特定波长相对应的颜色的光，从而在偏轴方向观察时改善由OLED器件产生的光的颜色。

8. 发明申请

WO2013058900A1 HIGHLY-CONFINED SEMICONDUCTOR NANOCRYSTALS 审中-公开
标题翻译：高分子半导体纳米晶体
公开(公告)号：WO2013058900A1
公开(公告)日：2013-04-25
申请号：PCT/US2012/055008
申请日：2012-09-13
申请人： EASTMAN KODAK COMPANY , KAHEN, Keith Brian , HOLLAND, Matthew , PALLIKKARA KUTTIATOOR, Sudeep
发明人： KAHEN, Keith Brian , HOLLAND, Matthew , PALLIKKARA KUTTIATOOR, Sudeep
IPC分类号： C09K11/02 , C09K11/70 , C09K11/88
CPC分类号： C09K11/70 , C09K11/02 , C09K11/883
摘要： A high confinement semiconductor nanocrystal and method for making such nanocrystal are described. The nanocrystal includes a compact homogenous semiconductor region having a first composition in the center area of the nanocrystal, with its diameter being less than 2.0 nm; and a gradient alloy region comprised of a second varying alloy composition which extends from the surface of the compact homogenous semiconductor region to the surface of the nanocrystal.
摘要翻译：描述了一种高约束半导体纳米晶体和制造这种纳米晶体的方法。纳米晶体包括在纳米晶体的中心区域具有第一组成的致密均匀的半导体区域，其直径小于2.0nm; 以及由从致密均匀半导体区域的表面延伸到纳米晶体的表面的第二变化合金组成的梯度合金区域。

9. 发明申请

WO2012109046A1 INDIUM PHOSPHIDE COLLOIDAL NANOCRYSTALS 审中-公开
标题翻译：磷酸盐胶体纳米晶体
公开(公告)号：WO2012109046A1
公开(公告)日：2012-08-16
申请号：PCT/US2012/023216
申请日：2012-01-31
申请人： EASTMAN KODAK COMPANY , REN, Xiaofan , KAHEN, Keith Brian , HOLLAND, Matthew
发明人： REN, Xiaofan , KAHEN, Keith Brian , HOLLAND, Matthew
IPC分类号： C01B25/08 , C30B29/40 , C30B7/00 , C30B29/60
CPC分类号： C30B29/40 , C01B25/08 , C30B7/00
摘要： A method of making a colloidal solution of indium phosphide semiconductor nanocrystals, includes forming a first solution by combining solvents and ligands; and heating the first solution to a temperature equal to or higher than 290°C and, while heating, adding to the first solution, a second solution containing trialkylindium, a phosphorus precursor and solvents and ligands so that a reaction takes place that forms a colloidal solution of indium phosphide semiconductor nanocrystals. The method further includes forming core shell indium phosphide semiconductor nanocrystals by forming semiconducting shells on the nanocrystals.
摘要翻译：制造磷化铟半导体纳米晶体的胶体溶液的方法包括通过结合溶剂和配体形成第一溶液; 并将第一溶液加热到290℃以上的温度，在加热的同时向第一溶液中加入含有三烷基鎓，磷前体和溶剂和配体的第二溶液，使得发生形成胶体的反应磷化铟半导体纳米晶体的溶液。该方法还包括通过在纳米晶体上形成半导体壳形成核心壳磷化铟半导体纳米晶体。

10. 发明申请

WO2011123257A1 LIGHT EMITTING NANOWIRE DEVICE 审中-公开
标题翻译：发光纳米装置
公开(公告)号：WO2011123257A1
公开(公告)日：2011-10-06
申请号：PCT/US2011/028919
申请日：2011-03-18
申请人： EASTMAN KODAK COMPANY , ELLINGER, Carolyn, R. , KAHEN, Keith, Brian
发明人： ELLINGER, Carolyn, R. , KAHEN, Keith, Brian
IPC分类号： H01L33/00 , H01L33/18 , H01L33/42 , H01L33/08
CPC分类号： H01L33/18 , H01L33/0079 , H01L33/08 , H01L33/42
摘要： Method of making a light emitting semiconductor nanowire device (10) includes providing a plurality of spaced light emitting semiconductor nanowires (100) on a growth substrate (200); applying a dielectric material (105) disposed between the semiconductor nanowires producing a layer of embedded semiconductor nanowires having a top surface opposed to a bottom surface, wherein the bottom surface is defined by the interface with the growth substrate; depositing a first electrode (120) over the top surface in electrical contact with the nanowires; joining the first electrode to a device substrate; removing the growth substrate and exposing the bottom surface of the layer of embedded nanowires; depositing a second electrode (130) on the bottom surface of the nanowires so that it is in electrical contact with the nanowires; and wherein either the first or second electrode is transparent to permit light to be transmitted from the light emitting semiconductor nanowires through the transparent electrode.
摘要翻译：制造发光半导体纳米线器件（10）的方法包括在生长衬底（200）上提供多个间隔开的发光半导体纳米线（100）; 施加设置在所述半导体纳米线之间的电介质材料（105），其产生具有与底表面相对的顶表面的嵌入式半导体纳米线层，其中所述底表面由与所述生长衬底的界面限定; 在所述顶表面上沉积与所述纳米线电接触的第一电极（120）; 将所述第一电极接合到器件衬底; 去除生长衬底并暴露嵌入的纳米线层的底表面; 在所述纳米线的底表面上沉积第二电极（130）使得其与所述纳米线电接触; 并且其中所述第一或第二电极是透明的，以允许光从所述发光半导体纳米线透过所述透明电极。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式