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    • 6. 发明申请
    • RED LIGHT LASER
    • 红光激光
    • WO2007103527A2
    • 2007-09-13
    • PCT/US2007005974
    • 2007-03-07
    • BRENNER MARY KJOHNSON KLEIN L
    • BRENNER MARY KJOHNSON KLEIN L
    • H01S5/00H01S3/04
    • H01S5/18333B82Y20/00H01S5/024H01S5/18308H01S5/18311H01S5/18358H01S5/2063H01S5/3095H01S5/3215H01S5/3406H01S5/34326H01S5/423
    • A semiconductor material vertical cavity surface emitting laser for emitting narrow linewidth light comprising a compound semiconductor material substrate and pairs of semiconductor material layers in a first mirror structure on the substrate of a first conductivity type each differing from that other in at least on constituent concentration and each first mirror pair separate from that one remaining by a first mirror spacer layer with a graded constituent concentration. An active region on the first mirror structure has plural quantum well structures separated by at least one active region spacer layer and there is a second mirror structure on the active region similar to the first but of a second conductivity type. A pair of electrical interconnections is separated by said substrate, said first mirror structure, said active region and said second mirror structure.
    • 一种半导体材料垂直腔表面发射激光器,用于发射窄线宽光,其包括化合物半导体材料衬底和第一反射镜结构中的成对半导体材料层,所述第一反射镜结构在第一导电类型的衬底上,至少在组成浓度上至少与其他导体类型不同, 每个第一反射镜对与由具有分级成分浓度的第一镜间隔物剩余的第一反射镜分离。 第一镜结构上的有源区域具有由至少一个有源区间隔层隔开的多个量子阱结构,并且在有源区上存在与第一导电类型相似的第二反射镜结构。 一对电气互连由所述基板,所述第一反射镜结构,所述有源区和所述第二反射镜结构分开。