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1. 发明申请

WO2010091045A2 NON-FLUORIDE CONTAINING COMPOSITION FOR THE REMOVAL OF POLYMERS AND OTHER ORGANIC MATERIAL FROM A SURFACE 审中-公开
标题翻译：从表面去除聚合物和其他有机材料的非氟化物组合物
公开(公告)号：WO2010091045A2
公开(公告)日：2010-08-12
申请号：PCT/US2010/022987
申请日：2010-02-03
申请人： ADVANCED TECHNOLOGY MATERIALS, INC. , THE WARNER-BABCOCK INSTITUTE FOR GREEN CHEMISTRY, LLC , KORZENSKI, Michael B. , JIANG, Ping , WARNER, John , MENDUM, Ted , LUGUS, Michelle , WHITFIELD, Justin , VANBENSCHOTEN, Helen , PAYNE, Makonnen
发明人： KORZENSKI, Michael B. , JIANG, Ping , WARNER, John , MENDUM, Ted , LUGUS, Michelle , WHITFIELD, Justin , VANBENSCHOTEN, Helen , PAYNE, Makonnen
IPC分类号： G03F7/42
CPC分类号： G03F7/425 , G03F7/426
摘要： Removal compositions and processes for removing polymers and/or other organic materials from a surface having same thereon. The semi-aqueous composition is substantially devoid of fluoride species.
摘要翻译：从其上具有相同表面的表面除去聚合物和/或其它有机材料的去除组合物和方法。半水性组合物基本上不含氟化物。

2. 发明申请

WO2009129299A2 HIGH-THROUGHPUT SPECTRAL IMAGING AND SPECTROSCOPY APPARATUS AND METHODS 审中-公开
标题翻译：高通量光谱成像和光谱仪器及方法
公开(公告)号：WO2009129299A2
公开(公告)日：2009-10-22
申请号：PCT/US2009/040651
申请日：2009-04-15
申请人： XU, Jeff, Qiang , YI, Jiang, Ping , ZHOU, Xiao, Ping , MICROVAST, INC.
发明人： XU, Jeff, Qiang , YI, Jiang, Ping , ZHOU, Xiao, Ping
IPC分类号： G01N21/25 , G01N21/47 , G01N21/31
CPC分类号： G01N21/253 , G01N21/274 , G01N21/31 , G01N21/3563 , G01N21/4738 , G01N2021/0339 , G01N2021/3155 , G01N2021/317 , G01N2021/3185 , G01N2021/4709 , G01N2021/4735 , G01N2021/6484
摘要： Disclosed are high-throughput spectral imaging and spectroscopy apparatus and methods that acquire the property information of measured substance's UV-visible and infrared radiation through using at least one substantially uniform monochromatic incident irradiation source and spatial resolved array detector. The high-throughput analysis is achieved by acquiring a parallel spectral imaging and spectroscopy over a library element substrate. The apparatus and methods include both hardware and software for achieving both spectral imaging and spectroscopic analysis.
摘要翻译：公开了通过使用至少一个基本上均匀的单色入射照射源和空间分辨阵列检测器来获取测量物质的紫外可见光和红外辐射的性质信息的高通量光谱成像和光谱仪器和方法。高通量分析是通过在文库元素底物上获得平行光谱成像和光谱来实现的。该装置和方法包括用于实现光谱成像和光谱分析两者的硬件和软件。

3. 发明申请

WO2009058373A2 HALO-FUNCTIONAL SILANE, PROCESS FOR ITS PREPARATION, RUBBER COMPOSITION CONTAINING SAME AND ARTICLES MANUFACTURED THEREFROM 审中-公开
标题翻译：低功能硅烷，其制备方法，含橡胶组合物及其制造的制品
公开(公告)号：WO2009058373A2
公开(公告)日：2009-05-07
申请号：PCT/US2008/012387
申请日：2008-10-30
申请人： MOMENTIVE PERFORMANCE MATERIALS INC. , POHL, Eric, R. , JIANG, Ping , VECERE, Linda , ALFONSO, Juan
发明人： POHL, Eric, R. , JIANG, Ping , VECERE, Linda , ALFONSO, Juan
IPC分类号： C07F7/18
CPC分类号： C07F7/1836
摘要： A halo-functional silane possesses halogen functionality and alkanedioxysilyl functionality.
摘要翻译：卤代官能硅烷具有卤素官能团和链烷二氧基甲硅烷基官能团。

4. 发明申请

WO2008151166A1 DAMASCENE PROCESS HAVING RETAINED CAPPING LAYER THROUGH METALLIZATION FOR PROTECTING LOW-K DIELECTRICS 审中-公开
标题翻译：通过用于保护低K电介质的金属化具有保留的覆盖层的大面积工艺
公开(公告)号：WO2008151166A1
公开(公告)日：2008-12-11
申请号：PCT/US2008/065586
申请日：2008-06-02
申请人： TEXAS INSTRUMENTS INCORPORATED , JIANG, Ping , RAMAPPA, Deepak, A.
发明人： JIANG, Ping , RAMAPPA, Deepak, A.
IPC分类号： H01L21/3205 , H01L21/28
CPC分类号： H01L21/76808 , H01L29/78
摘要： A method of forming single or dual damascene interconnect structures using either a via- first or trench first approach includes the steps of providing a substrate (3) surface having an etch-stop layer thereon, a low-k dielectric layer on the etch-stop layer, and a dielectric capping layer on the low-k dielectric layer. In the single damascene process using trench pattern, a trench is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the via-first process, using a via pattern, the via is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the trench first process, using the via pattern the via is etched through the capping layer, the low-k dielectric layer and the etch-stop layer to reach the substrate surface. In the single damascene (12) or either via-first or trench- first dual damascene embodiment, the capping layer is retained over the low-k dielectric layer on top surfaces of the trench into the metal processing, generally including CMP processing, wherein the CMP process removes at least a portion, and in one embodiment the entire, capping layer.
摘要翻译：使用通孔或沟槽第一方法形成单个或双镶嵌互连结构的方法包括以下步骤：提供在其上具有蚀刻停止层的衬底（3）表面，蚀刻停止层上的低k电介质层层，以及在低k电介质层上的介电覆盖层。在使用沟槽图案的单个镶嵌工艺中，通过覆盖层，低k电介质层和蚀刻停止层蚀刻沟槽以到达衬底表面。在通孔第一工艺中，使用通孔图案，通过覆盖层，低k电介质层和蚀刻停止层蚀刻通孔以到达衬底表面。在沟槽第一工艺中，使用通孔图案，通过覆盖层，低k电介质层和蚀刻停止层蚀刻通孔以到达衬底表面。在单镶嵌（12）或通孔或第一双镶嵌件实施例中，将覆盖层保留在沟槽顶表面上的低k介电层上，进入金属加工，通常包括CMP处理，其中 CMP工艺去除至少一部分，并且在一个实施例中移除整个封盖层。

5. 发明申请

WO2008080097A3 LIQUID CLEANER FOR THE REMOVAL OF POST-ETCH RESIDUES 审中-公开
标题翻译：液体清洁剂用于去除残留物后残留物
公开(公告)号：WO2008080097A3
公开(公告)日：2008-10-09
申请号：PCT/US2007088644
申请日：2007-12-21
申请人： ADVANCED TECH MATERIALS , VISINTIN PAMELA M , JIANG PING , KORZENSKI MICHAEL B , MINSEK DAVID W , COOPER EMANUEL I , HSU MING-ANN , FLETCHER KRISTIN A
发明人： VISINTIN PAMELA M , JIANG PING , KORZENSKI MICHAEL B , MINSEK DAVID W , COOPER EMANUEL I , HSU MING-ANN , FLETCHER KRISTIN A
IPC分类号： C11D11/00 , C11D1/62 , C11D3/00 , C11D3/02 , C11D3/24 , C11D3/43 , C11D7/08 , C11D7/28 , C11D7/50
CPC分类号： C11D3/0073 , C09K13/00 , C09K13/08 , C11D1/62 , C11D3/042 , C11D3/245 , C11D3/43 , C11D7/08 , C11D7/28 , C11D7/5004 , C11D11/0047 , H01L21/02063
摘要： Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon. In addition, the composition may be useful for the removal of titanium nitride layers from a microelectronic device having same thereon.
摘要翻译：用于从其上具有所述残余物的微电子装置清除等离子体后蚀刻残留物的清洁组合物和方法。该组合物实现了对来自微电子器件的残留物材料（包括含钛，含铜，含钨和/或含钴的蚀刻后残留物）的高效清洁，同时不损伤层间电介质，金属互连材料，和/或也存在于其上的封盖层。另外，该组合物可用于从其上具有相同材料的微电子器件去除氮化钛层。

6. 发明申请

WO2008039352A2 SPATIALLY ASSISTED FAULT REPORTING METHOD, SYSTEM AND APPARATUS 审中-公开
标题翻译：空间辅助故障报告方法，系统和设备
公开(公告)号：WO2008039352A2
公开(公告)日：2008-04-03
申请号：PCT/US2007020407
申请日：2007-09-20
申请人： SCHWEITZER ENGINEERING LAB INC , SKENDZIC VESELIN , MORMAN DANIEL N , BLAT GEORGE C , JIANG PING
发明人： SKENDZIC VESELIN , MORMAN DANIEL N , BLAT GEORGE C , JIANG PING
IPC分类号： G06F11/00
CPC分类号： G05B23/0267
摘要： Methods and systems for spatially assisted fault reporting in a distribution system. Typical steps of the methods may include determining the location of the fault or the distance to the fault, generating and storing a plurality of waypoints representative of the route of the distribution system, processing the plurality of waypoints, determining spatial coordinates of the fault, generating a fault report, and communicating the fault report. The waypoints may be contained within an XML file which is compressed with a compression algorithm prior to sending and which is decompressed prior to use at a receiving end to create a visual template or overlay for displaying the fault information.
摘要翻译：配电系统中空间辅助故障报告的方法和系统。方法的典型步骤可以包括确定故障的位置或与故障的距离，生成和存储表示分配系统的路线的多个航路点，处理多个航路点，确定故障的空间坐标，产生故障报告，并通报故障报告。航路点可以包含在XML文件中，该文件在发送之前用压缩算法压缩，并且在接收端使用之前进行解压缩以创建用于显示故障信息的可视模板或覆盖。

7. 发明申请

WO2007149885A2 SECURITY FEATURES AND PROCESSES FOR FORMING SAME 审中-公开
标题翻译：安全特征和形成方法
公开(公告)号：WO2007149885A2
公开(公告)日：2007-12-27
申请号：PCT/US2007071601
申请日：2007-06-19
申请人： CABOT CORP , KODAS TOIVO T , OLJACA MIODRAG , HAMPDEN-SMITH MARK J , FOTOU GEORGE P , KORNBREKKE RALPH E , SHEN JIANG-PING
发明人： KODAS TOIVO T , OLJACA MIODRAG , HAMPDEN-SMITH MARK J , FOTOU GEORGE P , KORNBREKKE RALPH E , SHEN JIANG-PING
IPC分类号： B22F1/00 , B22F1/02
CPC分类号： B42D25/373 , B22F1/0018 , B22F1/02 , B22F9/28 , B22F9/30 , B42D2033/10 , B82Y30/00 , C03C12/00 , H01L31/022425 , Y02E10/50 , Y10T428/12181 , Y10T428/256 , Y10T428/2991 , Y10T428/2995 , Y10T428/2998
摘要： Security features, e.g., reflective security features, and processes for forming security features are described. The security features comprise crystalline metal-containing particles having a primary particle size of from about 10 nanometers to less than 500 nanometers and including a continuous or non-continuous coating of a ceramic material. Inks comprising such crystalline metal-containing particles are also described. The crystalline metal-containing particles are preferably produced by flame spraying.
摘要翻译：描述了安全特征，例如反射安全特征以及用于形成安全特征的过程。安全特征包括具有约10纳米至小于500纳米的初级粒度的含结晶金属的颗粒，并且包括陶瓷材料的连续或非连续涂层。还描述了包含这种含结晶金属的颗粒的油墨。含结晶金属的颗粒优选通过火焰喷涂制成。

8. 发明申请

WO2007088051A2 MODULATION OF MDL-1 ACTIVITY FOR TREATMENT OF INFLAMMATORY DISEASE 审中-公开
标题翻译：调节MDL-1活性治疗炎性疾病
公开(公告)号：WO2007088051A2
公开(公告)日：2007-08-09
申请号：PCT/EP2007/000862
申请日：2007-01-26
申请人： BAYER SCHERING PHARMA AKTIENGESELLSCHAFT , FAULDS, Daryl , FIORUCCI, Stefano , JIANG, Ping , LIU, Yi , PARKINSON, John
发明人： FAULDS, Daryl , FIORUCCI, Stefano , JIANG, Ping , LIU, Yi , PARKINSON, John
IPC分类号： C07K14/705
CPC分类号： C07K14/705 , A61K38/00 , C07K14/70503 , C07K2319/30
摘要： The present invention provides compositions and methods that modulate MDL-1 activity in a cell, in vivo or in vitro. In particular, the present invention provides methods for treatment of inflammatory diseases using synthetic or recombinant compositions that modulate MDL-1 activity in a mammalian cell, in vivo or invitro. More particularly, the present invention provides protein compositions useful for the treatment of diseases having an inflammatory process mediated by MDL-1.
摘要翻译：本发明提供了在体内或体外调节细胞中的MDL-1活性的组合物和方法。特别地，本发明提供了使用在哺乳动物细胞中体内或体外调节MDL-1活性的合成或重组组合物治疗炎性疾病的方法。更具体地说，本发明提供了可用于治疗具有由MDL-1介导的炎症过程的疾病的蛋白质组合物。

9. 发明申请

WO2005094534A3 A SEMICONDUCTOR DEVICE HAVING A SILICIDED GATE ELECTRODE AND METHOD OF MANUFACTURE THEREFOR 审中-公开
公开(公告)号：WO2005094534A3
公开(公告)日：2005-10-13
申请号：PCT/US2005/009886
申请日：2005-03-24
申请人： TEXAS INSTRUMENTS INCORPORATED , BU, Haowen , LU, Jiong-Ping , YU, Shaofeng , JIANG, Ping , MONTGOMERY, Clint
发明人： BU, Haowen , LU, Jiong-Ping , YU, Shaofeng , JIANG, Ping , MONTGOMERY, Clint
IPC分类号： H01L21/44
摘要： The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a silicided gate electrode (150) located over a substrate (110), the silicided gate electrode (150) having gate sidewall spacers (160) located on sidewalls thereof. The semiconductor device (100) further includes source/drain regions (170) located in the substrate (110) proximate the silicided gate electrode (150), and silicided source/drain regions (180) located in the source/drain regions (170) and at least partially under the gate sidewall spacers (160).

10. 发明申请

WO2005094534A2 A SEMICONDUCTOR DEVICE HAVING A SILICIDED GATE ELECTRODE AND METHOD OF MANUFACTURE THEREFOR 审中-公开
标题翻译：具有硅化物电极的半导体器件及其制造方法
公开(公告)号：WO2005094534A2
公开(公告)日：2005-10-13
申请号：PCT/US2005/009886
申请日：2005-03-24
申请人： TEXAS INSTRUMENTS INCORPORATED , BU, Haowen , LU, Jiong-Ping , YU, Shaofeng , JIANG, Ping , MONTGOMERY, Clint
发明人： BU, Haowen , LU, Jiong-Ping , YU, Shaofeng , JIANG, Ping , MONTGOMERY, Clint
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8238 , H01L29/49 , H01L29/78
CPC分类号： H01L29/66507 , H01L21/28097 , H01L21/823835 , H01L21/823864 , H01L29/4975 , H01L29/6656 , H01L29/6659 , H01L29/7833
摘要： The present invention provides a semiconductor device, a method of manufacture therefor, and a method for manufacturing an integrated circuit. The semiconductor device (100), among other possible elements, includes a silicided gate electrode (150) located over a substrate (110), the silicided gate electrode (150) having gate sidewall spacers (160) located on sidewalls thereof. The semiconductor device (100) further includes source/drain regions (170) located in the substrate (110) proximate the silicided gate electrode (150), and silicided source/drain regions (180) located in the source/drain regions (170) and at least partially under the gate sidewall spacers (160).
摘要翻译：本发明提供一种半导体器件及其制造方法以及集成电路的制造方法。除了其它可能的元件之外，半导体器件（100）包括位于衬底（110）上方的硅化栅电极（150），所述硅化栅电极（150）具有位于其侧壁上的栅极侧壁间隔物（160）。半导体器件（100）还包括位于邻近硅化物栅电极（150）的衬底（110）中的源/漏区（170）和位于源/漏区（170）中的硅化源/漏区（180）并且至少部分地在栅极侧壁间隔件（160）下方。

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