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1. 发明申请

WO2012177040A2 TRANSPARENT ELECTRODE HAVING NANO-STRUCTURE PATTERNS AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：具有纳米结构图形的透明电极及其制造方法
公开(公告)号：WO2012177040A2
公开(公告)日：2012-12-27
申请号：PCT/KR2012004863
申请日：2012-06-20
申请人： KOREA ADVANCED INST SCI & TECH , JUNG HEE TAE , JEONG HYEON SU , JEON HWAN-JIN , KIM YUN HO
发明人： JUNG HEE TAE , JEONG HYEON SU , JEON HWAN-JIN , KIM YUN HO
IPC分类号： H01B13/00 , G02F1/1343 , H01B5/14
CPC分类号： G02F1/13439 , B82Y30/00 , G02F1/13378 , G02F2202/36
摘要： The present invention relates to a transparent electrode having nano-structure patterns and a method for manufacturing the same, and more specifically, to a transparent electrode having nano-structure patterns and a method for manufacturing the same, wherein nano-structure patterns having high resolution and a high aspect ratio are formed on a transparent electrode by using an ion bombardment phenomenon through a physical ion etching step, thereby showing excellent liquid crystal alignment characteristics without deterioration of conductivity and light transmittance of the transparent electrode. The method for manufacturing a transparent electrode having nano-structure patterns according to the present invention enables: a transparent electrode to be manufactured by applying an ion bombardment phenomenon through physical ion etching, thereby manufacturing the transparent electrode having pretilt angles in liquid crystals with various high aspect ratios and uniformity using a simple process at low costs; and the liquid crystals to be aligned directly by the transparent electrode such that the transmittance of light is increased and a resistance value is lowered, whereby product performance is enhanced by improving liquid crystal alignment characteristics and stability. The alignment of the liquid crystals according to the present invention can be precisely adjusted in a desired direction by arranging two substrates having the transparent electrode, such that the invention can be applied to various display devices.
摘要翻译：本发明涉及具有纳米结构图案的透明电极及其制造方法，更具体地，涉及具有纳米结构图案的透明电极及其制造方法，其中具有高分辨率的纳米结构图案并且通过使用离子轰击现象通过物理离子蚀刻步骤在透明电极上形成高纵横比，从而显示优异的液晶取向特性，而不会导致透明电极的导电性和透光率的劣化。根据本发明的具有纳米结构图案的透明电极的制造方法能够：通过物理离子蚀刻施加离子轰击现象来制造透明电极，从而制造具有各种高的液晶预倾角的透明电极纵横比和均匀性使用简单的方法以低成本; 并且由透明电极直接对准的液晶使得光的透射率增加并且电阻值降低，从而通过改善液晶取向特性和稳定性来提高产品性能。通过配置具有透明电极的两个基板，可以在所需方向上精确地调整本发明的液晶的取向，使得本发明可以应用于各种显示装置。

2. 发明申请

WO2012002717A2 THREE-DIMENSIONAL NANOSTRUCTURE, AND PREPARATION METHOD THEREOF 审中-公开
标题翻译：三维纳米结构及其制备方法
公开(公告)号：WO2012002717A2
公开(公告)日：2012-01-05
申请号：PCT/KR2011004735
申请日：2011-06-29
申请人： KOREA ADVANCED INST SCI & TECH , JUNG HEE TAE , JEON HWAN-JIN , KIM KYOUNG-HWAN , BAEK YOUN-KYOUNG
发明人： JUNG HEE TAE , JEON HWAN-JIN , KIM KYOUNG-HWAN , BAEK YOUN-KYOUNG
IPC分类号： B82B3/00 , B82B1/00
CPC分类号： B22F7/04 , B81C1/00031 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C03C17/006 , C03C2217/42 , C03C2218/34 , C23C14/221 , G03F7/0002 , G03F7/0037 , Y10T428/24479 , Y10T428/24612
摘要： The present invention relates to a three-dimensional nanostructure, and a preparation method thereof, and more specifically, to various shapes of three-dimensional nanostructures having a large area, a high aspect ratio and uniformity prepared by forming an objective material-polymer composite structure in which an objective material is adhered to the outer circumferential surface of a patterned polymer structure by applying ion bombardment through a physical ion etching process, and removing the polymer of the objective material-polymer composite structure, and a preparation method thereof. According to the present invention, the preparation method of a three-dimensional nanostructure can prepare a three-dimensional nanostructure having a high aspect ratio and uniformity through a simple low cost process by applying ion bombardment through a physical ion etching process, and can easily prepare various shapes of structures and can form a uniform nanostructure having a large area and a thickness of 10 nm or less by controlling the pattern and shape of a polymer structure at the same time. Therefore, it is possible to implement the high performance of a future nano-device such as a nano electronic device, an optical device, a bio-device, an energy device, and the like.
摘要翻译：本发明涉及三维纳米结构及其制备方法，更具体地说，涉及通过形成目标材料 - 聚合物复合结构而制备的具有大面积，高纵横比和均匀度的各种形状的三维纳米结构其中通过物理离子蚀刻工艺施加离子轰击并除去目标材料 - 聚合物复合结构的聚合物，其中目标材料附着到图案化聚合物结构的外周表面及其制备方法。根据本发明，三维纳米结构体的制备方法可以通过简单的低成本方法通过物理离子蚀刻工艺进行离子轰击，制备具有高纵横比和均匀性的三维纳米结构，并且可以容易地制备可以通过同时控制聚合物结构的图案和形状，形成具有大面积和厚度为10nm以下的均匀纳米结构的各种形状的结构。因此，可以实现纳米电子器件，光学器件，生物器件，能量器件等未来的纳米器件的高性能。

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